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power electronic

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2 views

Ass 2 Solution

power electronic

Uploaded by

madhes14
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Assignment-2

Answers

1. RC-IGCTs are known as asymmetrical IGCTs can be fabricated with


reverse conducting diode in the same package.

Correct Option- 4th

2. The firing angle refers to the phase angle at which the gate signal is
applied to a thyristor, specifically the silicon-controlled rectifier (SCR).
The firing angle determines when the SCR turns on and conducts current.

By adjusting the firing angle, the on-off timing of the SCR can be
controlled. When the firing angle is zero degrees (fully conducting), the
SCR turns on at the beginning of each cycle of the applied alternating
current (AC) waveform. As the firing angle increases, the SCR turns on
later in the AC cycle, resulting in a reduced conduction time and a lower
average output voltage.

By varying the firing angle over a range from 0 to 180 degrees, the SCR
can be triggered at different points within each AC cycle, allowing for
control of the power delivered to the load. This control is essential for
applications such as motor speed control, light dimming, and power
regulation.

Correct Option- 2nd

3. Examine the internal structure of a MOSFET, notice the n-p-n structure


between the drain and source terminal.

Correct Option- 3rd

4. It only depends upon the number stored charges which depends upon the
rate of change of the current.

Correct Option- 3rd

5. Recall the I-V curve of a diode in the 3rd quadrant.

Correct Option- 4th


6. A potential difference is established across the junctions due to
recombination of holes & electrons. This growing filed (barrier potential)
stops the further diffusion.

Correct Option- 4th

7. Due to the stored charges during the earlier current flow, even when the
current reduces to zero due to some structural properties of the device, the
device takes time to sweep out the stored charges.

Correct Option- 3rd

8. When reverse biased depletion layer increases until the breakdown value
is reached.

Correct Option- 1st

9. The earlier IGBT’s had latch-up problems (device cannot turn off even
after the gate signal is removed), and secondary breakdown problems (in
which a localized hotspot in the device goes into thermal runaway and
burns the device out at high currents).

Correct Option- 4th

10. Low on state power loss is one of the best parameters of both BJT & the
IGBT.

Correct Option- 1st

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