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Assignment 11

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Assignment 11

Assignment for electronic

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Quanta Institute Page |1

Assignment-11 : BJT & Diode Previous Years .

1. The figure below shows a voltage regulator utilizing a Zener diode of break down voltage
5𝑉𝑉 and a positive triangular wave input of amplitude 10𝑉𝑉.

For 𝑉𝑉𝑖𝑖 > 5𝑉𝑉, the Zener regulates the output voltage by channeling the excess current through
it self. Which of the following waveforms shows the current ‘𝑖𝑖’ passing through the Zener
diode? [NET Dec. 2011]

(a) (b)

(c) (d)
2. The transistor in the figure circuit has ℎ𝑓𝑓𝑓𝑓 = 35 and ℎ𝑖𝑖𝑖𝑖 = 1000𝛺𝛺. If the load resistance
𝑅𝑅𝐿𝐿 = 1000𝛺𝛺, the voltage and current gain are respectively. [NET June 2012]

(a) −35, −35 (b) 35, 35 (c) 35, 0.97 (d) 0.98, 35
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3. A live music broadcast consists of a radio wave of frequency 7 𝑀𝑀𝑀𝑀𝑀𝑀, amplitude modulated
by a microphone output consisting of signals with a maximum frequency of 10 𝐾𝐾𝐾𝐾𝐾𝐾. The
spectrum of modulated output will the zero outside the frequency band [NET Dec. 2012]
(a) 7.00 MHz to 7.01 MHz (b) 6.99 MHz to 7.01 MHz
(c) 6.99 MHz to 7.00 MHz (d) 6.995 MHz to 7.005 MHz
4. A diode 𝐷𝐷 as shwon in the circuit as an i-v relation which can be proximated by:

𝑣𝑣2 + 2𝑣𝑣𝐷𝐷 , 𝑓𝑓𝑓𝑓𝑓𝑓 𝑣𝑣𝐷𝐷 > 0


𝑖𝑖𝐷𝐷 = � 𝐷𝐷
0, 𝑓𝑓𝑓𝑓𝑓𝑓 𝑣𝑣𝐷𝐷 ≤ 0

The value of 𝑣𝑣𝐷𝐷 in the circuit is: [NET Dec. 2012]

(a) (−1 + √11)𝑉𝑉 (b) 8𝑉𝑉 (c) 5𝑉𝑉 (d) 2𝑉𝑉


5. A silicon transistor with built-in voltage 0.7𝑉𝑉 is used in the circuit shown, with 𝑉𝑉𝐵𝐵𝐵𝐵 = 9.7𝑉𝑉,
𝑅𝑅𝐵𝐵 = 300𝑘𝑘𝑘𝑘, 𝑉𝑉𝐶𝐶𝐶𝐶 = 12𝑉𝑉 and 𝑅𝑅𝐶𝐶 = 2𝑘𝑘𝑘𝑘. Which of the following figures correctly represents
the load line and the quiescent 𝑄𝑄 point? [NET June 2013]

(a) (b)

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(c) (d)
6. The insulation resistance 𝑅𝑅 of an insulated cable is measured by connecting it in parallel
with a capacitor 𝐶𝐶, a voltmeter, and battery 𝐵𝐵 as shown. The voltage across the cable dropped
from 150𝑉𝑉 to 15𝑉𝑉, 1000 seconds after the switch 𝑆𝑆 is closed. If the capacitance of the cable
is 5𝜇𝜇𝜇𝜇 then its insulation resistance is approximately. [NET June 2013]

(a) 109 𝛺𝛺 (b) 108 𝛺𝛺 (c) 107 𝛺𝛺 (d) 106 𝛺𝛺


7. Two identical Zener diodes are placed back to back in series and are connected to a variable
DC power supply. The best representation of the I-V characteristics of the circuit is
[NET Dec. 2013]

(a) (b)

(c) (d)
8. An RC network produces a phase-shift of 30𝑜𝑜 . How many such RC networks should be
cascaded together and connected to a Common Emitter amplifier so that the final circuit
behaves as an oscillator? [NET June 2014]

(a) 6 (b) 12 (c) 9 (d) 3


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9. The 𝐼𝐼 − 𝑉𝑉 characteristics of the diode in the circuit is given by [NET Dec. 2014]
(𝑉𝑉 − 0.7)/500 𝑓𝑓𝑓𝑓𝑓𝑓 𝑉𝑉 > 0.7
𝐼𝐼 = �
0 𝑓𝑓𝑓𝑓𝑓𝑓 𝑉𝑉 < 0.7

where 𝑉𝑉 is measured in volts and 𝐼𝐼 is measured in amperes. The current 𝑡𝑡 in the circuit is
(a) 10.0 𝑚𝑚𝑚𝑚 (b) 9.3 𝑚𝑚𝑚𝑚 (c) 6.2 𝑚𝑚𝑚𝑚 (d) 6.7 𝑚𝑚𝑚𝑚
10. A junction is made between A metal of work 𝑊𝑊𝑀𝑀 and a doped semiconductor of work
function 𝑊𝑊𝑆𝑆 with 𝑊𝑊𝑀𝑀 > 𝑊𝑊𝑆𝑆 . If the electric field at the interface has to 𝑒𝑒 increased by factor
of 3, then the dopant concentration in the semiconductor would have to be:
[NET Dec. 2014]
(a) increased by a factor of 9 (b) decreased by a factor of 3

(c) increased by a factor of 3 (d) decreased by a factor of √3


11. A large MOS transistor consists of 𝑁𝑁 individual transistors connected in parallel. If the only
from of noise in each transistor is 1/f noise a then the equivalent voltage noise spectral
density for the MOS transistor is: [NET Dec. 2014]
(a) 1/𝑁𝑁 times that of a single transistor (b) 𝑁𝑁/2 times that of a single transistor

(c) 𝑁𝑁 times that of a single transistor (d) 𝑁𝑁2 times that of a single transistor
12. Consider a Low Pass (LP) and High Pass (HP) filter with cutoff frequencies 𝑓𝑓𝐿𝐿𝐿𝐿 and 𝑓𝑓𝐻𝐻𝐻𝐻 ,
respectively, connected in series or in paralell configurations are shown in the figures A and
B below.

Which of the following statements is correct?


(a) For 𝑓𝑓𝐿𝐿𝐿𝐿 < 𝑓𝑓𝐻𝐻𝐻𝐻, A acts as a Band Pass filter and B acts as a Band Reject filter

(b) For 𝑓𝑓𝐿𝐿𝐿𝐿 > 𝑓𝑓𝐻𝐻𝐻𝐻, A stops the signal from passing through and B passes the signal without
filtering

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(c) For 𝑓𝑓𝐿𝐿𝐿𝐿 < 𝑓𝑓𝐻𝐻𝐻𝐻, A acts as a B and Pass filter and B passes the signal without filtering

(d) For 𝑓𝑓𝐿𝐿𝐿𝐿 > 𝑓𝑓𝐻𝐻𝐻𝐻, A passes the signal without filtering and B acts as a Band Reject filter

13. Consider the circuits shown in Figures (a) and (b) below.

If the transistors in Figures (a) and (b) have current gain (𝛽𝛽𝑑𝑑𝑑𝑑 ) of 100 and 10 respectively, then
they operate in the : [NET June 2015]
(a) active region and saturation region respectively
(b) saturation region and active region respectively
(c) saturation region in both cases
(d) active region in both cases
14. If the reverse bias voltage of a silicon varactor is increased by a factor of 2; the
corresponding transition capacitance [NET Dec. 2015]

(a) increases by a factor of √2 (b) increases by a factor of 1/√2

(c) decreases by a factor of √2 (d) decreases by a factor of 1/√2


𝑎𝑎𝑎𝑎
15. The 𝐼𝐼 − 𝑉𝑉 characteristics of a device is 𝐼𝐼 = 𝐼𝐼𝑠𝑠 �exp � 𝑐𝑐 � − 1�, where 𝑇𝑇 is the temperature
𝑇𝑇
and 𝑎𝑎 and 𝐼𝐼𝑠𝑠 are constant independent of 𝑇𝑇 and 𝑉𝑉. Which one of the following plots is correct
for a fixed applied voltage 𝑉𝑉 ?

(a) (b)

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(c) (d)
16. Two sinusoidal signal are sent to an analog multiplier of scale factor TV-1 followed by a low
pass filter (LPF) [NET Dec. 2016]

If the roll-off frequency of the LPF is 𝑓𝑓𝑐𝑐 = 5𝐻𝐻𝐻𝐻, the output voltage 𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜 is

(a) 5 𝑉𝑉 (b) 25 𝑉𝑉 (c) 100 𝑉𝑉 (d) 50 𝑉𝑉


17. Let 𝐼𝐼0 be the saturation current, 𝜂𝜂 the ideality factor and 𝑣𝑣𝐹𝐹 and 𝑣𝑣𝑅𝑅 the forward and
reverse potentials, respectively, for a diode. The ratio 𝑅𝑅𝑅𝑅 /𝑅𝑅𝐹𝐹 of its reverse and forward
resistances 𝑅𝑅𝑅𝑅 and 𝑅𝑅𝐹𝐹 respectively, varies as (in the following 𝑘𝑘𝐵𝐵 is the Boltzmann constant,
𝑇𝑇 is the absolute temperature and 𝑞𝑞 is the charge). [NET June 2017]
𝑣𝑣 𝑞𝑞𝑣𝑣 𝑣𝑣 𝑞𝑞𝑣𝑣
(a) 𝑣𝑣𝑅𝑅 exp �𝜂𝜂𝑘𝑘 𝐹𝐹𝑇𝑇� (b) 𝑣𝑣𝐹𝐹 exp �𝜂𝜂𝑘𝑘 𝐹𝐹𝑇𝑇�
𝐹𝐹 𝑅𝑅 𝑅𝑅 𝑅𝑅

𝑣𝑣 𝑞𝑞𝑣𝑣 𝑣𝑣 𝑞𝑞𝑣𝑣
(c) 𝑣𝑣𝑅𝑅 exp �− 𝜂𝜂𝑘𝑘 𝐹𝐹𝑇𝑇� (d) 𝑣𝑣𝐹𝐹 exp �− 𝜂𝜂𝑘𝑘 𝐹𝐹𝑇𝑇�
𝐹𝐹 𝑅𝑅 𝑅𝑅 𝑅𝑅

18. A Zener diode with an operating voltage of 10 𝑉𝑉 at 250 𝐶𝐶 has a positive temperature
coefficient of 0.07% per ºC of the operating voltage. The operating voltage of this Zener diode
at 1250 𝐶𝐶 is [NET Dec. 2017]
(a) 12.0 𝑉𝑉 (b) 11.7 𝑉𝑉 (c) 10.7 𝑉𝑉 (d) 9.3 𝑉𝑉
19. In the circuit below the voltages 𝑉𝑉𝐵𝐵𝐵𝐵 and 𝑉𝑉𝑐𝑐𝑐𝑐 are kept fixed, the voltage measured at 𝐵𝐵 is
a constant, but that measured at 𝐴𝐴 fluctuates between a few 𝜇𝜇𝜇𝜇 to a few 𝑚𝑚𝑚𝑚. From these
measurements it may be inferred that the [NET Dec. 2017]

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(a) base is open internally (b) emitter is open internally


(c) collector resistor is open (d) base resistor is open
20. In the circuit below, 𝐷𝐷1 and 𝐷𝐷2 are two silicon diodes with the same characteristics. If the
forward voltage drop of a silicon diode is 0.7 𝑉𝑉 then the value of the current 𝐼𝐼1 + 𝐼𝐼𝐷𝐷1 is
[NET Dec. 2017]

(a) 18.6 𝑚𝑚𝑚𝑚 (b) 93 𝑚𝑚𝑚𝑚 (c) 1395 𝑚𝑚𝑚𝑚 (d) 1465 𝑚𝑚𝐴𝐴
21. The sensitivity of a hot cathode pressure gauge is 10𝑚𝑚𝑚𝑚𝑚𝑚𝑟𝑟 −1. If the ratio between the
numbers of the impinging charged particles to emitted electrons is 1: 10, then the pressure
[NET Dec. 2017]

(a) 10mbar (b) 10−1 mbar (c) 10−2 mbar (d) 102 mbar
22. A sinusoidal signal with a peak voltage 𝑉𝑉𝑝𝑝 and average value zero, is an input to the
following circuit. [NET June 2018]

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Assuming ideal diodes, the peak value of the output voltage across the load resistor 𝑅𝑅𝐿𝐿 is
𝑉𝑉𝑝𝑝
(a) 𝑉𝑉𝑝𝑝 (b) (c) 2𝑉𝑉𝑝𝑝 (d) √2𝑉𝑉𝑝𝑝
2

23. In the following circuit, the value of the common-emitter forward current amplification
factor 𝛽𝛽 for the transistor is 100 and 𝑉𝑉𝐵𝐵𝐵𝐵 is 0.7 𝑉𝑉.

The base current 𝐼𝐼𝐵𝐵 is [NET June 2018]


(a) 40 𝜇𝜇𝜇𝜇 (b) 30 𝜇𝜇𝜇𝜇 (c) 44 𝜇𝜇𝜇𝜇 (d) 33 𝜇𝜇𝜇𝜇
24. A sinusoidal signal is an input to the following circuit

Which of the following graphs best describes the output wave function? [NET Dec. 2018]

(a) (b)

(c) (d)

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25. A sinusoidal voltage having a peak value of 𝑉𝑉𝑝𝑝 is an input to the following circuit, in which
the 𝐷𝐷𝐷𝐷 voltage is 𝑉𝑉𝑏𝑏 [NET Dec. 2018]

Assuming an ideal diode which of the following best describes the output waveform?

(a) (b)

(c) (d)
26. An 𝑛𝑛𝑛𝑛𝑛𝑛 -transistor is connected in a voltage divider configuration as shown in the figure
below.

If the resistor 𝑅𝑅2 is disconnected, the voltages 𝑉𝑉𝐵𝐵 at the base and 𝑉𝑉𝑐𝑐 at the collector change
as follows. [NET June 2019]
(a) Both 𝑉𝑉𝐵𝐵 and 𝑉𝑉𝑐𝑐 increase (b) Both 𝑉𝑉𝐵𝐵 and 𝑉𝑉𝑐𝑐 decrease
(c) 𝑉𝑉𝐵𝐵 decreases, but 𝑉𝑉𝑐𝑐 increases (d) 𝑉𝑉𝐵𝐵 increases, but 𝑉𝑉𝑐𝑐 decreases

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27. The forward diode current is given by 𝐼𝐼 = 𝑘𝑘𝑇𝑇 𝛼𝛼 𝑒𝑒 −𝐸𝐸𝑔𝑔/𝑘𝑘𝐵𝐵𝑇𝑇 ( exp (𝑒𝑒𝑒𝑒/𝑘𝑘𝐵𝐵 𝑇𝑇) − 1) , where 𝐸𝐸𝑔𝑔
is the band gap of the semiconductor, 𝑉𝑉 is the voltage drop across the diode, 𝑇𝑇 is the
temperature of the diode operating near room temperature and, 𝛼𝛼 and 𝐾𝐾 are constants. A
diode is used as a thermal sensor in the circuit shown below. [NET June 2019]

If 𝑉𝑉 is measured using an ideal voltmeter to estimate 𝑇𝑇, the variation of the voltage 𝑉𝑉 as a
function of 𝑇𝑇 is best approximated by (in the following 𝑎𝑎 and 𝑏𝑏 are constants)
(a) 𝑎𝑎𝑇𝑇 2 + 𝑏𝑏 (b) 𝑎𝑎𝑎𝑎 + 𝑏𝑏 (c) 𝑎𝑎𝑇𝑇 3 + 𝑏𝑏 (d) 𝑎𝑎𝑎𝑎 + 𝑏𝑏𝑇𝑇 2
28. In the circuit below, 𝐷𝐷 is an ideal diode, the source voltage 𝑉𝑉𝑠𝑠 = 𝑉𝑉0 sin 𝜔𝜔𝜔𝜔 is a unit
amplitude sine wave and 𝑅𝑅𝑠𝑠 = 𝑅𝑅𝐿𝐿

The average output voltage, 𝑉𝑉𝐿𝐿, across the load resistor 𝑅𝑅𝐿𝐿 is [NET Dec. 2019]
1 3
(a) 𝑉𝑉 (b) 𝑉𝑉 (c) 3𝑉𝑉0 (d) 𝑉𝑉0
2𝜋𝜋 0 2𝜋𝜋 0

29. Assume that the noise spectral density, at any given frequency, in a current amplifier is
independent of frequency. The bandwidth of measurement is changed from 1𝐻𝐻𝐻𝐻 to 10𝐻𝐻𝐻𝐻.
The ratio 𝐴𝐴/𝐵𝐵 of the RMS noise current before (A) and after (B) the bandwidth modification
is [NET Dec. 2019]

(a) 1/10 (b) 1/√10 (c) √10 (d) 10


30. In a collector feedback circuit shown in the figure below, the base emitter voltage 𝑉𝑉𝐵𝐵𝐵𝐵 =
𝐼𝐼
0.7𝑉𝑉 and current gain 𝛽𝛽 = 𝐼𝐼 𝑐𝑐 = 100 for the transistor
𝐵𝐵

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The value of the base current 𝐼𝐼𝐵𝐵 is [NET Dec. 2019]


(a) 20 𝜇𝜇𝜇𝜇 (b) 40 𝜇𝜇𝜇𝜇 (c) 10 𝜇𝜇𝜇𝜇 (d) 100 𝜇𝜇𝜇𝜇
31. A current amplifier is characterized by: [GATE 1996]
(a) Low input impedance and high output impedance
(b) high input impedance and low output impedance
(c) low impedance at both input and output terminals
(d) high impedance at both input and output terminals
32. Which of the following characteristics DOES NOT belong to a common collector transistor
amplifier? [GATE 1996]
(a) Low voltage gain (b) High current gain
(c) High input impedance (d) High output impedance
33. An amplifier has a voltage gain of 500 and an input impedance 20𝐾𝐾𝐾𝐾, without any
feedback. Now a negative feedback with 𝛽𝛽 = 0.1 is applied. Its gain and input impedance with
feedback will respectively be : [GATE 1996]
(a) 9.8 and 392 𝐾𝐾 ohms (b) 9.8 and 1020 𝐾𝐾 ohms
(c) 50 and 1020 𝐾𝐾 ohms (d) 50 and 2 𝐾𝐾 ohms
34. In the circuit shown below, 𝑅𝑅𝐵𝐵 = 1𝑘𝑘𝑘𝑘 and 𝑅𝑅𝐶𝐶 = 100𝛺𝛺. If the transistor 𝛽𝛽(ℎ𝐹𝐹𝐹𝐹 ) is 100, the
current throueli 𝑅𝑅𝐶𝐶 will be : [GATE 2000]

(a) ≈ 0.43𝐴𝐴 (b) ≈ 50𝐴𝐴


(c) zero (d) Oscillating between 0 and 50 𝑚𝑚𝑚𝑚
35. In an n-p-n transistor, the leak age current consists of: [GATE 2001]
(a) Electrons moving from the base to the emitter
(b) Electrons moving from the collector to the base
(c) Electrons moving from the collector for to the emitter
(d) Electrons moving from the base for the collector
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36. A field effect transistor is a: [GATE 2004]


(a) Unipolar device (b) Special type of bipolar junction transistor
(c) Unijunction device (d) Device with low input impedance
37. What should be the values of the components 𝑅𝑅 and 𝑅𝑅2 such that the frequency of the
Wien Bride oscillator is 300 Hz? [Given: 𝐶𝐶 = 0.01𝜇𝜇𝜇𝜇 and 𝑅𝑅1 = 12𝑘𝑘𝑘𝑘]

(a) 𝑅𝑅 = 48𝑘𝑘𝑘𝑘 and 𝑅𝑅2 = 12𝑘𝑘𝑘𝑘 (b) 𝑅𝑅 = 26𝑘𝑘𝑘𝑘 and 𝑅𝑅2 = 24𝑘𝑘𝑘𝑘
(c) 𝑅𝑅 = 530𝑘𝑘𝑘𝑘 and 𝑅𝑅2 = 1𝑀𝑀𝑀𝑀 (d) 𝑅𝑅 = 53𝑘𝑘𝑘𝑘 and 𝑅𝑅2 = 24𝑘𝑘𝑘𝑘
38. Calculate the collector voltage (𝑣𝑣𝑐𝑐 ) of the transistor circuit shown in the figure:
[Given: 𝛼𝛼 = 0.96, 𝐼𝐼𝐶𝐶𝐶𝐶𝐶𝐶 = 20𝜇𝜇𝜇𝜇, 𝑉𝑉𝐵𝐵𝐵𝐵 = 0.3𝑉𝑉, 𝑅𝑅𝐵𝐵 = 100𝑘𝑘𝑘𝑘, 𝑉𝑉𝐶𝐶𝐶𝐶 = +10𝑉𝑉 and 𝑅𝑅𝐶𝐶 = 2.2𝑘𝑘𝑘𝑘]
[GATE 2004]

(a) 3.78 𝑉𝑉 (b) 3.82 𝑉𝑉 (c) 4.72 𝑉𝑉 (d) 9.7 𝑉𝑉


39. Which of the following statements is correct for a common emitter amplifier circuit?
[GATE 2004]
(a) The output is taken from the emitter
(b) There is 180º phase shill between input and output voltages
(c) There is no phase shitl between input and output voltages
(d) Both p-n junctions are forward biased.
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40. A junction field effect transistor behaves as a: [GATE 2005]


(a) Voltage controlled current source (b) Voltage controlled voltage source
(c) Current controlled voltage source (d) Current controlled current source
41. For the rectifier circuit shown in the figure, the sinusoidal voltage (𝑉𝑉1 or 𝑉𝑉2 ) at the output
of the transformer has a maximum value of 10V. The load resistance 𝑅𝑅𝐿𝐿 is 1𝑘𝑘𝑘𝑘. If 𝐼𝐼𝑎𝑎𝑎𝑎 is the
average current through the resistor 𝑅𝑅𝐿𝐿 the circuit corresponds to 𝑎𝑎. [GATE 2005]

(a) Full wave rectifier with 𝐼𝐼𝑎𝑎𝑎𝑎 = 20/𝜋𝜋𝜋𝜋𝜋𝜋


(b) Halfwave rectifier with 𝐼𝐼𝑎𝑎𝑎𝑎 = 20/𝜋𝜋𝜋𝜋𝜋𝜋
(c) Half wave rectifier with 𝐼𝐼𝑎𝑎𝑎𝑎 = 10/𝜋𝜋𝜋𝜋𝜋𝜋
(d) Full wave rectifier with 𝐼𝐼𝑎𝑎𝑎𝑎 = 10/𝜋𝜋𝜋𝜋𝜋𝜋
42. In the circuit shown in the figure the venin voltage 𝑉𝑉𝑇𝑇ℎ and Thevenin resistance as seen
by the load resistance 𝑅𝑅𝐿𝐿 = (≈ 1𝑘𝑘𝑘𝑘) are respectively: [GATE 2005]

(a) 15𝑉𝑉, 1𝑘𝑘𝑘𝑘 (b) 30𝑉𝑉, 4𝑘𝑘𝑘𝑘 (c) 20𝑉𝑉, 2𝑘𝑘𝑘𝑘 (d) 10𝑉𝑉, 5𝑘𝑘𝑘𝑘
43. A sinusoidal input voltage 𝑣𝑣𝑖𝑖𝑖𝑖 of frequency 𝜔𝜔 is fed to the circuit shown in the figure,
where 𝐶𝐶1 >> 𝐶𝐶2 . If 𝑣𝑣𝑖𝑖𝑖𝑖 is the peak value of the input voltage then output voltage (𝑣𝑣𝑜𝑜𝑜𝑜𝑜𝑜 ) .
[GATE 2006]
𝑣𝑣𝑖𝑖𝑖𝑖
(a) 2𝑣𝑣𝑖𝑖𝑖𝑖 (b) 2𝑣𝑣0 sin ω𝑡𝑡 (c) √2𝑣𝑣𝑖𝑖𝑖𝑖 (d) sin ω𝑡𝑡
2

44. The high input impedance of field effect transistor (FET) amplifier is due to [GATE 2006]
(a) The pinch-off voltage (b) Its very low gate current
(c) The source and drain being far apart (d) The geometry of the PET

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45. The largest analog output voltage from a 6-bit digital to analog converter (DAC) which
produces 1.0𝑉𝑉 output for a digital input of 010100, is: [GATE 2006]
(a) 1.6 𝑉𝑉 (b) 2.9 𝑉𝑉 (c) 3.15 𝑉𝑉 (d) 5.0 𝑉𝑉
46. For the circuit shown, the potential difference (in Volts) across 𝑅𝑅𝐿𝐿 is: [GATE 2007]

(a) 48 (b) 52 (c) 56 (d) 65

47. When an input voltage of the form shown, is applied to the circuit given below, the output
voltage 𝑉𝑉0 is of the form. 𝑉𝑉𝑉𝑉(𝑆𝑆𝑆𝑆 = 0.7𝑉𝑉) [GATE 2007]

(a) (b)

(c) (d)
48. The circuit shown below: [GATE 2009]

(a) Is a common-emitter amplifier (b) Uses a non transistor


(c) Is an oscillator (d) Has a voltage gain less than one
49. An amplifier of gain 1000 is made into a feedback amplifier by feeding 9.9% of its output
voltage in series with the input opposing. If 𝑓𝑓𝐻𝐻 = 200𝑘𝑘𝑘𝑘𝑘𝑘 for the amplifier without feedback,
then due to the feedback. [GATE 2009]
(a) The gain decreases by 10 times
(b) The output resistance increases by 10 times
(c) The fii increases by 100 times
(d) The input resistance decreases by 100 times
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50. Pick the correct statement based on the below circuit. [GATE 2009]

(a) The maximum Zener current; 𝐼𝐼𝑍𝑍( max ) , when 𝑅𝑅𝐿𝐿 = 10𝑘𝑘𝑘𝑘 is 15 𝑚𝑚𝑚𝑚

(b) The minimum Zener current 𝐼𝐼𝑍𝑍(𝑚𝑚𝑚𝑚𝑚𝑚) . when 𝑅𝑅𝐿𝐿 = 2𝑘𝑘𝑘𝑘

(c) With 𝑦𝑦𝑖𝑖𝑖𝑖 = 20𝑉𝑉, 𝐼𝐼𝐿𝐿 = 𝐼𝐼𝑍𝑍 , when 𝑅𝑅𝐿𝐿 = 2𝑘𝑘𝑘𝑘

(d) The power dissipated across the Zener when 𝑅𝑅𝐿𝐿 = 10𝑘𝑘𝑘𝑘 and 𝑉𝑉𝑖𝑖𝑖𝑖 = 20𝑉𝑉 is 100 𝑚𝑚𝑚𝑚
51. In the following circuit, the voltage drop across the ideal diode in forward bias condition
is 0.7 𝑉𝑉

The current passing through the diode is: [GATE 2012]

(a) 0.5 𝑚𝑚𝑚𝑚 (b) 1.0 𝑚𝑚𝑚𝑚 (c) 15 𝑚𝑚𝑚𝑚 (d) 2.0 𝐼𝐼𝐼𝐼𝐼𝐼
52. Consider the following circuit in which the current gain 𝛽𝛽𝑑𝑑𝑑𝑑 of the transistor is 100

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Which one of the following correctly represents the load line (collector current 𝐼𝐼𝑐𝑐 with respect
to collector-emitter voltage 𝑉𝑉𝐶𝐶𝐶𝐶) and 𝑄𝑄-point of this circuit? [GATE 2012]

(a) (b)

(c) (d)
53. The current gain of the transistor in the following circuit is 𝛽𝛽𝑑𝑑𝑑𝑑 = 100. The value of
collector current 𝐼𝐼𝑐𝑐 is _______ 𝑚𝑚𝑚𝑚. [GATE 2011]

54. In order to measure a maximum of 1𝑉𝑉 with a resolution of 1mV using a 𝑛𝑛-bit 𝐴𝐴/𝐷𝐷
converter, working under the principle of ladder network, the minimum value of n is ______
[GATE 2014]
55. A low pass filter is formed by a resistance 𝑅𝑅 and a capacitance C. At the cut-off angular
1
frequency 𝜔𝜔𝐶𝐶 = 𝑅𝑅𝑅𝑅 , the voltage gain and the phase of the output voltage relative to the input
voltage respectively, are:
(a) 0.71 and 45𝑜𝑜 (b) 0.71 and −45𝑜𝑜 (c) 0.5 and −90𝑜𝑜 (d) 0.5 and 90𝑜𝑜

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56. In the given circuit, the voltage across the source resistor is 1𝑉𝑉. The drain voltage (in 𝑉𝑉) is
_________ [GATE 2015]

57. In the simple current source shown in the figure 𝑄𝑄1 and 𝑄𝑄2 are identical transistors with
current gain 𝛽𝛽 = 100 and 𝑉𝑉𝐵𝐵𝐵𝐵 = 0.7𝑉𝑉

The current 𝐼𝐼0 (in-mA) is _______ (up to two decimal places) [GATE 2015]
58. The number density of electrons in the conduction band of a semiconductor at a given
temperature is 2 × 1019 𝑚𝑚−3 . Upon lightly doping this semiconductor with donor impurities,
the number density of conduction electrons at the same temperature becomes 4 × 1020 𝑚𝑚−3 .
The ratio of majority to minority charge carrier concentration is [GATE 2016]
59. For the transistor shown in the figure, assume 𝑉𝑉𝐵𝐵𝐵𝐵 = 0.7𝑉𝑉 and 𝛽𝛽𝑑𝑑𝑑𝑑 = 100. If 𝑉𝑉𝑖𝑖𝑖𝑖 =
5𝑉𝑉, 𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜 (in Volts) is _______ . (Give your answer up to one decimal place). [GATE 2016]

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60. In the figure given below, the input to the primary of the transformer is a voltage varying
sinusoidally with time. The resistor 𝑅𝑅 is connected to the centre tap of the secondary. Which
one of the follow nip plots represents the voltages across the resistor 𝑅𝑅 as a function of time?
[GATE 2017]

(a) (b)

(c) (d)
61. For the transistor amplifier circuit shown below with 𝑅𝑅1 = 10𝑘𝑘𝑘𝑘, 𝑅𝑅2 = 10𝑘𝑘𝑘𝑘, 𝑅𝑅3 = 1𝑘𝑘𝑘𝑘
and 𝛽𝛽 = 99. Neglecting the emitter diode resistance the input impedance of the amplifier
looking into the base for small ac signals is ______ (up to two decimal places) [GATE 2017]

62. An n-channel FET having Gate-Source switch-off voltage 𝑉𝑉𝐺𝐺𝐺𝐺(𝑂𝑂𝑂𝑂𝑂𝑂) = −2𝑉𝑉 is used to invert
a 0 − 5𝑉𝑉 square-wave signal as shown. The maximum allowed value of 𝑅𝑅 would be
__________𝑘𝑘𝑘𝑘 (up to two decimal places). [GATE 2018]

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63. The voltage regulator circuit shown in the figure has been made with a Zener diode rated
at 15𝑉𝑉, 200𝑚𝑚𝑚𝑚. It is required that the circuit should dissipate 150 𝑚𝑚𝑚𝑚 power across the
fixed load resistor 𝑅𝑅𝐿𝐿 . [TIFR 2012]

For stable operation of this circuit, the input voltage 𝑉𝑉𝑖𝑖 must have a range
(a) 17.5 𝑉𝑉 to 20.5 𝑉𝑉 (b) 15.5 𝑉𝑉 to 20.5 𝑉𝑉
(c) 15.5 𝑉𝑉 to 22.5 𝑉𝑉 (d) 17.5 𝑉𝑉 to 22.5 𝑉𝑉
64. The circuit depicted on the right has been made with a silicon n-p-n transistor. Assuming
that there will be a 0.7𝑉𝑉 drop across a forward-biased silicon n-n junction, the power
dissipated across the transistor will be, approximately, [TIFR 2013]

(a) 53 𝑚𝑚𝑚𝑚 (b) 94 𝑚𝑚𝑚𝑚 (c) 17 𝑚𝑚𝑚𝑚 (d) 67 𝑚𝑚𝑚𝑚

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65. The figure on the right shown the current voltage characteristics of a diode over a range
of voltage and current where it is safe to open are the diode: [TIFR 2013]

When this diode is used in the circuit on the extreme right, the approximate current, in 𝑚𝑚𝑚𝑚,
through the diode will be:
(a) 0 (b) 8.3 (c) 16.7 (d) 25

66. Consider the following circuit.

Which of the graphs given below is a correct representation of 𝑉𝑉𝑜𝑜𝑜𝑜𝑜𝑜 ?

(a) (b)

(c) (d)
67. Two LCR circuits (A) and (B) are shown below where 𝐶𝐶 << 𝐶𝐶. At time 𝑡𝑡 = 0, change 𝑄𝑄 is
put on the capacitor 𝐶𝐶. [TIFR 2015]

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Which of the following statements is correct?


(a) The charge 𝑄𝑄 will decay faster in (A)
(b) The charge 𝑄𝑄 will decay faster in (B)
(c) The charge 𝑄𝑄 will decay at the same rate in (A) and (B)
(d) The relative decay rates cannot be predicted without knowing the exact values of 𝐿𝐿, 𝐶𝐶, 𝑅𝑅
and 𝐶𝐶𝑐𝑐
68. All resistors in the circuit on the right have alternance of ±5%.

Assuming a diode drop of 0.7𝑉𝑉, which of the following is the lowest possible value of the
collector voltage? [TIFR 2015]
(a) 3.1 𝑉𝑉 (b) 4.1 𝑉𝑉 (c) 4.7 𝑉𝑉 (d) 5.2 𝑉𝑉

69. You are given the following circuit and two instruments: a voltmeter and an ammeter both
with 0.001% accuracy in their readings.

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Which of the following methods will result in the ost accurate reading for the current without
interrupting the current in the circuit? [TIFR 2015]
(a) Use voltmeter to measures voltages points B and C
(b) Use the ammeter to measures current at point B
(c) Use voltmeter to measures voltage across points A and B
(d) Use voltmeter to measures voltage across points A and C
70. In the generalized operational amplifier circuit shown on the right, the amp has a very
high input impedance (𝑍𝑍 > 50𝑀𝑀𝑀𝑀) and an open gain or 1000 for the frequency range under
consideration. Assuming that the op-amp draws negligible current, the voltage ratio 𝑉𝑉2 /𝑉𝑉1 is
approximately: [TIFR 2016]

(a) 190 (b) −190 (c) −90 (d) 80


71. In the transistor circuit shown on the right, assume that the voltage drop between the
base and the emitter is 0.5𝑉𝑉.

What will be the ratio of the resistances 𝑅𝑅2 /𝑅𝑅1 , in order to make this circuit function as a
source of constant current, 𝐼𝐼 = 1𝑚𝑚𝑚𝑚 ? [TIFR 2016]
(a) 4.5 (b) 3.0 (c) 2.5 (d) 2.0
72. For the circuit depicted on the right, the input voltage 𝑉𝑉𝑖𝑖 is a simple sinusoid as shown
below, where the time period is much smaller compared to the time constant of this circuit.
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The voltage 𝑉𝑉0 across 𝐶𝐶 is best represented by: [TIFR 2016]

(a) (b)

(c) (d)

73. Consider a sawtooth waveform which rises linearly from 0 Volt to 1 Volt in 10 ns and then
decays linearly to 0𝑉𝑉 over a period of 100 ns. Find the 𝑟𝑟/𝑚𝑚. 𝑠𝑠. voltage in units of milli/Volt?
[TIFR 2016]
74. The circuit shown below contains an unknown device X.

The current voltage characteristic of the device X were determined and are shown in the plot
given below.

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Determine the current 𝐼𝐼 (in 𝑚𝑚𝑚𝑚) flowing through the device X. [TIFR 2016]
75. A current source produces a square wave 𝐼𝐼 (𝑡𝑡) of 1.0𝑉𝑉 peak to peak voltage and is used
to drive the RC circuit shown below.

Which of the following represents. The correct voltage across the capacitor.

(a) (b)

(c) (d)
76. A signal is to be sent from a coaxial cable with impedance 40𝛺𝛺 into a second coaxial cable
with impedance 60𝛺𝛺. We can prevent reflection at the joint between the cables, by adding
an impedance in parallel to the second cable. What should be the value, in units of Ohms (𝛺𝛺)
of that impedance? [TIFR 2017]

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Answer Key

1 A 21 C 41 A 61 4.75 - 5.01
2 A 22 C 42 A 62 0.70
3 D 23 D 43 A 63 A
4 D 24 A 44 B 64 B
5 B 25 C 45 C 65 B
6 B 26 D 46 A 66 B
7 C 27 B 47 C 67 A
8 A 28 A 48 D 68 D
9 C 29 B 49 C 69 C
10 A 30 A 50 C 70 C
11 A 31 A 51 B 71 D
12 C 32 D 52 A 72 B
13 B 33 B 53 1.4 - 1.7 73 Approx. 600
14 C 34 B 54 9.99 - 10.01 74 11 to 13
15 D 35 A 55 B 75 D
16 B 36 A 56 * 76 *
17 A 37 D 57 5.6 - 5.9
18 C 38 B 58 400
19 D 39 B 59 5.5 - 5.9
20 C 40 A 60 A

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