EXPERIMENT-1

AIM: To become familiar with the operation of basic laboratory instruments:-

1) Power Supply
2) Signal Generator
3) Digital Storage Oscilloscope(DSO)
4) Multimeter

POWER SUPPLY
A power supply is a device that supplies electric power to an electrical load. The term is most commonly applied
to electric power converters that convert one form of electrical energy to another, though it may also refer to devices
that convert another form of energy (mechanical, chemical, solar) to electrical energy. A regulated power supply is one
that controls the output voltage or current to a specific value; the controlled value is held nearly constant despite
variations in either load current or the voltage supplied by the power supply's energy source.Every power supply must
obtain the energy it supplies to its load, as well as any energy it consumes while performing that task, from an energy
source. Depending on its design, a power supply may obtain energy from:

• Electrical energy transmission systems. Common examples of this include power supplies that
convert AC line voltage to DC voltage.
• Energy storage devices such as batteries and fuel cells.
• Electromechanical systems such as generators and alternators.
• Solar power.
A power supply may be implemented as a discrete, stand-alone device or as an integral device that is hardwired to its
load. Examples of the latter case include the low voltage DC power supplies that are part of desktop
computers and consumer electronics devices.

Commonly specified power supply attributes include:

• The amount of voltage and current it can supply to its load.

• How stable its output voltage or current is under varying line and load conditions.
• How long it can supply energy without refueling or recharging (applies to power supplies that employ portable
energy sources).

SIGNAL GENERATOR
Signal generators, also known variously as function generators, RF and microwave signal generators, pitch
generators, arbitrary waveform generators, digital pattern generators or frequency generators are electronic devices
that generate repeating or non-repeating electronic signals (in either the analog or digital domains). A function
generator is a device which produces simple repetitive waveforms. Such devices contain an electronic oscillator,
acircuit that is capable of creating a repetitive waveform. (Modern devices may use digital signal processing to
synthesize waveforms, followed by a digital to analog converter, or DAC, to produce an analog output). The most
common waveform is a sine wave, but sawtooth, step (pulse), square, and triangular waveform oscillators are
commonly available as are arbitrary waveform generators (AWGs). If the oscillator operates above the audio
frequency range (>20 kHz), the generator will often include some sort of modulation function such as amplitude
modulation (AM), frequency modulation (FM), or phase modulation (PM) as well as a second oscillator that provides
an audio frequency modulation waveform.Arbitrary waveform generators, or AWGs, are sophisticated signal
generators which allow the user to generate arbitrary waveforms, within published limits of frequency range, accuracy,
and output level. Unlike function generators, which are limited to a simple set of waveforms; an AWG allows the user
to specify a source waveform in a variety of different ways. AWGs are generally more expensive than function
generators, and are often more highly limited in available bandwidth; as a result, they are generally limited to higher-
end design and test applications. In the lab we use the TEKTRONIX AFG3000C Arbitrary /
Function Generator.

Today's designs are often complex, demanding a variety of stimulus signals during test. With 12 standard waveforms,
arbitrary waveform capability, and signal impairment options, the AFG3000C Series Arbitrary / Function Generator
supports a wide range of application needs with one instrument. Best-in-class performance ensures signals are
accurately reproduced. A large display and 25 shortcut keys make the AFG3000C Series Arbitrary / Function
Generator both easy to learn and easy to use.

DIGITAL STORAGE OSCILLOSCOPE

 A digital storage oscilloscope is an oscilloscope which stores and analyses the signal digitally rather than
using analogue techniques. It is now the most common type of oscilloscope in use because of the advanced trigger,
storage, display and measurement features which it typically provides.The input analogue signal is sampled and then
converted into a digital record of the amplitude of the signal at each sample time. The sampling frequency should be
not less than the Nyquist rate to avoid aliasing. These digital values are then turned back into an analogue signal for
display on acathode ray tube (CRT), or transformed as needed for the various possible types of output—liquid crystal
display, chart recorder, plotter or network interface. In the lab we use theTektronix
TPS2012B
100 MHz, 2 Channel, 1.0 GS/s Digital Storage Oscilloscope.
• Features & Benefits
o 100 MHz
o 2 isolated analog channels, plus Isolated External Trigger
o 2.5 k standard record length on all channels
o 1 GS/s sample rate on all channels
o 8 Hours of Continuous Battery Operation with Two Batteries Installed, Hot Swappable for
Virtually Unlimited Freedom from AC Line Power
o Optional Power Application Software offers the Broadest Range of Power Measurements
at its Price Point
o Quickly Documents and Analyses Measurement Results with OpenChoice Software or
Integrated Compact Flash Mass Storage
o FFT Standard on All Models
o Advanced Triggers to Quickly Capture the Event of Interest
o Traditional, Analog-style Knobs and Multilanguage User Interface for Easy Operation
o Quick Setup and Operation with Autoset Menu, Autorange, Waveform and Setup
Memories, and Built-in, Context-sensitive Help
o Backlit Menu Buttons for High Visibility
o 11 of the Most Critical Automatic Waveform Measurements

MULTIMETER
A multimeter or a multitester, also known as a VOM (Volt-Ohm meter), is an electronic measuring instrument that
combines several measurement functions in one unit. A typical multimeter would include basic features such as the
ability to measure voltage, current, and resistance. Analog multimeters use a microammeter whose pointer moves
over a scale calibrated for all the different measurements that can be made. Digital multimeters (DMM, DVOM)
display the measured value in numerals, and may also display a bar of a length proportional to the quantity being
measured. Digital multimeters are now far more common than analog ones, but analogmultimeters are still preferable
in some cases, for example when monitoring a rapidly-varying value.

A multimeter can be a hand-held device useful for basic fault finding and field service work, or a bench
instrument which can measure to a very high degree of accuracy. They can be used to troubleshoot electrical
problems in a wide array of industrial and household devices such as electronic equipment, motor controls, domestic
appliances, power supplies, and wiring systems.
EXPERIMENT-2
AIM: To study the active and passive electronic components.
An electronic component is any basic discrete device or physical entity in an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and
are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components.
Electronic components have two or more electrical terminals (or leads) aside from antennas which may only have one terminal. These leads connect, usually soldered to a printed circuit board, to create an electronic circuit (a discrete
circuit) with a particular function (for example an amplifier, radio receiver, or oscillator). Basic electronic components may be packaged discretely, as arrays or networks of like components, or integrated inside of packages such
as semiconductor integrated circuits, hybrid integrated circuits, or thick film devices. The following list of electronic components focuses on the discrete version of these components, treating such packages as components in their own
right.
A component may be classified as passive, active. The strict physics definition treats passive components as ones that cannot supply energy themselves, whereas a battery would be seen as an active component since it truly acts as a
source of energy.
However, electronic engineers who perform circuit analysis use a more restrictive definition of passivity. When only concerned with the energy of signals, it is convenient to ignore the so-called DC circuit and pretend that the power
supplying components such as transistors or integrated circuits are absent (as if each such component had its own battery built in), though it may in reality be supplied by the DC circuit. Then, the analysis only concerns the AC circuit, an
abstraction that ignores DC voltages and currents (and the power associated with them) present in the real-life circuit. This fiction, for instance, lets us view an oscillator as "producing energy" even though in reality the oscillator
consumes even more energy from a DC power supply, which we have chosen to ignore. Under that restriction, we define the terms as used in circuit analysis as:

• Active components rely on a source of energy (usually from the DC circuit, which we have chosen to ignore) and usually can inject power into a circuit, though this is not part of the definition. Active components include
amplifying components such as transistors, triode vacuum tubes(valves), and tunnel diodes.

• Passive components can't introduce net energy into the circuit. They also can't rely on a source of power, except for what is available from the (AC) circuit they are connected to. As a consequence they can't amplify
(increase the power of a signal), although they may increase a voltage or current (such as is done by a transformer or resonant circuit). Passive components include two-terminal components such as resistors, capacitors,
inductors, and transformers.
Most passive components with more than two terminals can be described in terms of two-port parameters that satisfy the principle of reciprocity—though there are rare exceptions. In contrast, active components (with more than two
terminals) generally lack that property.

Active components
Semiconductors
Diodes
Transistors
Integrated circuits
Optoelectronic devices
Display technologies
Vacuum tubes (valves)
Discharge devices
Power sources

Passive components
Resistors
Capacitors
Magnetic (inductive) devices
Networks
Transducers, sensors, detectors
Antennas
Assemblies, modules
Prototyping aids
 EXPERIMENT NO - 3

Object: To plot forward and reverse bias characteristics for

a) P-N junction diode
b) Zener diode
And to calculate the Resistance of diodes from their characteristics curves.

APPARATUS REQUIRED:-

1. Experimental Kit
2. Volt Meter 0-20V 01Nos
3. Volt Meter 0-2V 01Nos
4. Mili Ammeter 0-20mA 01Nos
5. Micro Ammeter 0-200µA 01Nos
6. Connecting wire

CIRCUIT DIAGRAM:-
1. Forward Biasing:-

D1
R1 ID

1k
VD 0-20mA

0-12 Vdc

0-2Volt

Fig. a

2. Reverse Biasing:-

R1 D1 ID

1k
VD 0-200microAmmeter

0-12 Vdc

0-20Volt

Fig. b
THEORY:-
The diode is a device formed from a junction of n-type and p-type semiconductor
material. The lead connected to the p-type material is called the anode and the lead
connected to the n-type material is the cathode. In general, the cathode of a diode is
marked by a solid line on the diode. The primary function of the diode is
rectification. When it is forward biased (the higher potential is connected to the
anode lead), it will pass current. When it is reversed biased ( the higher potential is
connected to the cathode lead), current flow is blocked. In the simplest form, the
diode is modeled by a switch. The switch is closed when the diode if forward biased
and open when the diode is reversed biased. Immediately after the diode is switched
to reverse bias, the depletion region is still full of carriers. Therefore, a large
negative current will flow until all of the excess carriers are washed out. As the
carriers are removed, the reverse current decays exponentially to approximately
zero. The other characteristic is reverse bias breakdown. In a normal diode,
breakdown can result in damage to the diode. However, the Zener diode is designed
to breakdown. In fact, the breakdown voltage is set to a desired point through the
construction of the device. This effect can be exploited to perform voltage
regulation.

ZENER DIODE:-
It is made up of specially doped semiconductor and in reverse bias the breakdown
can be made reversible. There are two types of breakdown, one is zener breakdown
and the other is the Avalanche breakdown. Zener diodes are used for regulating
output voltage.

PROCEDURE:-
Using suitable patch cords, make connection as shown in fig. a for forward
characteristics and fig. b for reverse characteristics.
The typical forward and reverse characteristics are shown in fig. c

fig. c
In order to plot forward bias characteristics, perform the following steps :

Vary the Diode voltage (VD) in step of 0.1V starting from zero and observe the
corresponding value of Diode Current (ID) in mili ammeter (mA).
Plot the graph.

Reverse characteristics :
Using suitable patch cords, make connection as shown in fig. b for reverse
characteristics.

In order to plot Reverse bias characteristics, perform the following steps:

Vary the Diode voltage (VD) in step of 1V starting from zero and observe the
corresponding value of Diode Current (ID) in µA.

Plot the graph.

Circuit Diagram for Zener characteristics ( Forward Bias)

R1 Iz

1k
VD 0-20mA

0-12 Vdc

0-2Volt

Fig. a
Circuit Diagram for Zener characteristics ( Reverse Bias)
R1 D5 Iz

1k
VD 0-20mA

0-12 Vdc

0-20Volt

Fig. b
 PROCEDURE:-

Using suitable patch cords, make connection as shown in fig. a for forward
Characteristics of zener doide

The typical forward and reverse characteristics are shown in fig. d

Fig.d

In order to plot forward bias characteristics, perform the following steps:

Vary the Diode voltage (VD) in step of 0.1V starting from zero and observe the
corresponding value of Diode Current (ID) in mili ammeter (mA).
.

Reverse characteristics for Zener

Using suitable patch cords make connection as shown in fig. b for reverse
Characteristics.
In order to plot the reverse bias characteristics, perform the following steps and
vary the Diode voltage (VZ) in steps of 1V starting from zero and observe the
corresponding value of Zener Diode Current (IZ) in mili ammeter (mA) and observe
the point where small change of zener voltage shows the great change in Zener
Diode current (IZ) that is breakdown zener voltage.
Plot the graph
 Observation Table for PN Junction Diode

S Forward Bias Reverse Bias

.No
VD (Volt) ID(mA) VD(Volt) ID(µA)
0 0
0.1 1
0.2 2
0.3 3
0.4 4
0.5 5
0.6 6
0.7 7
0.8 8
0.9 9
1.0 10

Observation Table for Zener Diode

S.No Forward Bias Reverse Bias

Vz (Volt) ID (mA) Vz (Volt) ID(mA)
0 0
0.1 1
0.2 2
0.3 3
0.4 4
0.5 5
0.6 6
0.7 7
0.8 8
0.9 9
1.0 10
Calculation
1. Static Resistance RD=VD/ID
2. Dynamic Resistance Rd=Δ VD/ Δ ID

Result
1. RD = ……………….
2. Rd = ………………..

Precaution:
1. Keep variable power supply in anti clock wise before the starting the
experiment.
2. Do not exceed Diode current beyond the limit i.e. 10 mA.
 EXPERIMENT NO.-4

OBJECT:- To study and plot the input and output Characteristics of the
given transistor in CB (common base) configuration.

APPARATUS REQUIRED :

Experimental Kit
Voltmeter 0-20Volt 02Nos
Ammeter 0-20mA 02Nos
Connecting wire

CIRCUIT DIAGRAM:-
SL10
I 0 I
1 E C 1
k k

0 -20 0 -20
mA mA
0 - 12
VDC VE VC
0 - 20 Volt B B
0 -12
DC 0 - 20 Volt VDC
Dc

Circuit Diagram for NPN Transistor fig.1

SK10 IC
1k IE 0 1k

0 -20 mA 0 -20 mA

0 - 12 Vdc VEB VCB

0 - 20 Volt Dc 0 -12 Vdc
0 - 20 Volt Dc

Circuit Diagram for PNP Transistor fig.2

Theory:

When a transistor is operated with base as a common terminal for both input and output ,it is
called a common base connection. in this configuration the input is at the emitter-base junction
.Depending on the bias condition(forward or reverse) of each of these junctions different modes
of operation of the BJT are obtained. In the active mode which is also called forward active
mode ,is the one used if the transistor is to operate as an amplifier. Switching application utilize
both the cut of mode and the saturation mode.Input characteristics of a transistor in common base
configuration are plots of IE vs VEB for various fixed values of VEB .The graph represents the
characteristics of emitter base junction at different collector base voltages. Below cut in voltage
Vy. IE is extremely small .The curve is similar to the I-V characteristics of a forward bias P-N
junction diode. Another feature of this characteristics is that it is affected by changing VCB.
Output characteristics of a transistor in common base configuration are plots of Ic vs VCB for
various fixed values of IE. The graph represent the characteristics of collector base junction at
different values of emitter current Initially Ic increases with increasing VCB but then it becomes
more or less constant in spite of increasing VCB. Another feature of this characteristics of this is
that Ic is not zero when VCB is zero. This is due to collector leakage current .Also the curve is
affected by changing IE. For Greater values of IE, the curve shifts above.

PROCEDURE:-

Input characteristics
1. Using suitable patch cords, make connections as shown in fig.1 for NPN transistor
and fig.2 for NPN transistor.
2. The typical input characteristics for some of the transistors are shown in fig.3

VCE =2V

INPUT CHARACTERISTICS

Y VCE=0V

IE(mA)

VEB (Volts)
 3. In order to plot these characteristics, perform the following steps:
(i) Set the collector voltage, VCB to a certain value, say 1 volt.
(ii) Now, vary the emitter base voltage, VEB in steps of say 0.1volt starting from
zero and observe the corresponding values of emitter current (IE) .
(iii) Repeat step (ii) for different values of collector voltages, VCB ) : 2V, 5V,
collector open.
(iv) Plot the input characteristics.

Output characteristics
1. The typical output characteristics for transistors are shown in fig.4

OUTPUT CHARACTERISTICS

IE = 2mA

IE = 1mA
IC (mA)

VCE (Volts)

2. In order to plot these characteristics, perform the following steps:

(i) Set the emitter current to a certain value, say 1mA.
(ii) Now Vary the collector base voltage(VCB) in steps of 1volt starting from zero
and observe the corresponding collector currents (Ic)
(iii) Ensure that the emitter current remains constant, when collector voltage is
being raised, by minor adjustment in the emitter-base voltage.
(iv) Repeat (ii) for different values of emitter currents, say, 2mA, 4mA, 8mA.
(v) Plot the family of output characteristics.
 To plot the saturation region

Reverse the supply connected to the output circuit. This will forward bias the
collector junction.(Reverse the voltmeter polarity too).
Set the emitter current to a certain value, say 1mA.

Now vary the collector Base voltage(VCB), note the corresponding collector
current until IC become zero. Typical value of VCB(Sat.)=0.6Volt

OBSERVATION TABLE FOR INPUT CHARACTERISTICS

Out put voltage Constant (VCB=0 volt) Output voltage constant (VCB=2 volt)
Input voltage Input current Input voltage Input current
VEB(Volt) IE(mA) VEB(Volt) IE(mA)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1

OBSERVATION TABLE FOR OUTPUT CHARACTERISTICS

Input Current Constant (IE=1 mA) Input Current constant (IE=2 mA)
output voltage output current output voltage output current
VCB(Volt) IC(mA) VCB(Volt) IC(mA)
0
1
2
3
4
5
6
7
8
9
10
Compute the following:-
1. Input resistance, Rin= VEB/IE for a certain value of VCB.
2. Output resistance, Ro=VCB/IC for a certain value of IE.
3. Current gain, α= IC/IE for a certain value of VCB.

Result
Rin =--------------------
RO = -------------------
α = -------------------

Points to remember:-
1. The cut-in voltage, Vx is approximately 0.2V for Ge transistor and approx. 0.6V for
a Si transistor.
2. The collector current, IC should be less than emitter current, IE.
3. The value for current gain αF is always less than 1.
 EXPERIMENT NO.-5
OBJECT:- To study and plot the input and output characteristics of the given transistor
in C.E. (common emitter) configuration.

APPARATUS REQUIRED:

Experimental Kit
Voltmeter 0-20Volt 02Nos
Ammeter 0-20mA 01Nos
Micro Ammeter 0-200µA 01Nos
Connecting wire
IC 1k
SK100
100k IB C
0 -20 mA
B
E
0 -200microAmmeter

0 -12 V DC
0 - 12 V DC 0 - 20 Volt DC
VBE
VCE 0 - 20 Volt DC

Circuit Diagram for NPN Transistor fig.1

SL100 IC 1k

100k IB C
0 -20 mA
B
E
0 -200microAmmeter

0 - 20 Volt DC 0 - 20 Volt DC 0 -12 V DC

0 - 12 V DC VBE
VCE

Circuit Diagram for PNP Transistor fig.2

PROCEDURE:-

Input Characteristics

1. Using suitable patch cords, make connections as shown in fig.1 for NPN transistor
and fig.2 for PNP transistor.

2. The typical input characteristics of PNP and NPN transistors in CE configurations

are shown in fig.3

INPUT CHARACTERISTICS

+Y VCB =0V VCB=2V

IB (A)

VBE (Volts)

3. In order to draw the above characteristics, perform the following steps:

(i) Set the collector voltage VCE to a constant voltage of 1Volt.
(ii) Now vary the base voltage VBE in steps of 0.1V and observe the
corresponding base current (IB) . Do not exceed the base current from
200µA. (The maximum base current varies from transistor to transistor.)

(iii) Repeat step (ii) for different values of collector voltages, VCE : 2V , 5V, and
Open collector.
(iv) plot the input characteristics.
 Output Characteristics

1. The typical output characteristics for some transistors are shown in fig.4

OUTPUT CHARACTERISTICS

IB = 35µA

IB = 25µA
IC (mA)

VCE (Volts)

2. n order to draw the above characteristics, perform the following steps:

(i) Set the base current ( IB ) to say 25µA with the help of 0-12V variable supply
in the input circuit.
(ii) Now vary the collector voltage (VCE) from 0 to 12 Volts in steps of say 1 Volt
and observe the corresponding values of collector current (IC).
(iii) Repeat step (ii) for different values of base current, say 35µA, 50µA,
(iv) Plot the output characteristics.
 OBSERVATION TABLE FOR INPUT CHARACTERISTICS

Out put voltage Constant (VCE=0 volt) Output voltage constant (VCE=2 volt)
Input voltage Input current Input voltage Input current
VBE(Volt) IB(µA) VBE(Volt) IB(µA)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1

OBSERVATION TABLE FOR OUTPUT CHARACTERISTICS

Input Current Constant (IB=25µA) Input Current constant (IB=35µA)

output voltage output current output voltage output current
VCE(Volt) IC(mA) VCE(Volt) IC(mA)
0
1
2
3
4
5
6
7
8
9
10

Important Note:-
As soon as, the collector voltage is changed, the base current also gets varied. For the new
collector voltage, set the base current to the earlier fixed value. This must be done for every
change in collector voltage to ensure that the base current is constant.
Compute the following:-
1. Input resistance, RIN = VBE / IB at certain value of VCE.
2. Output resistance Ro = VCE/IC at certain value of IB
3. DC forward current gain βF = IC/IB

Result
Input resistance, RIN = -------------
Output resistance Ro = ------------------
DC forward current gain βF =-------

Points to note:-
1. The cut-in voltage for a Ge transistor is about 0.2 Volt and about 0.6 volt for a Si
transistor.
2. Observe the ‘saturation’ and ‘active’ and cut-off regions in the output
characterestics.
3. The transistor gives current gain βF in the range of 100 to 300 general purpose
transistors.
4. Keep the knobs of both the 0-10 V D.C. supplies to fully anticlockwise position
before switching on the mains supply.
 EXPERIMENT NO- 6

AIM:-
To draw the
(i) Drain characteristics
(ii) Transfer characteristics
Of N-channel junction field effect transistor

APPARATUS REQUIRED :

Experimental Kit
Voltmeter 0-20Volt 01Nos
Voltmeter 0-5V 01Nos
Ammeter 0-20mA 01Nos
Connecting Wire

Circuit Diagram:

BFW10 ID 1k

1k
D 0 -20 mA

G
S

VGS
0 -12 V DC
0 - 5Volt DC VDS
0 - 5 V DC 0 - 20 Volt DC

Circuit Diagram of N Channel JFET

Theory

JFET(Junction Field Effect Transistor) is a three terminal device(drain, source,

gate)similar to BJT. The difference between them is that the JFET is a voltage controlled
device ,whereas BJT is a current controlled device. Figure 6-1: The Junction Field Effect
Transistor(NTE 312)Drain Characteristics: Whereas for BJT the relationship between an
output parameter, iC, and an input parameter, iB, is given by a constant _, the relationship
in JFET between an output parameter ,iD, and an input parameter, vGS, is more complex.
In the saturation region, there exists a square-law transfer relationship.
 Transconductance Characteristics: In the transfer characteristics of a two port
network, the input parameter is changed and its effect on the output parameter is
observed. Similarly JFET can be treated as a two port nonlinear network. The transfer
characteristics wherein the input parameter is the voltage across gate and source, and the
output parameter is the drain current are called the trans-conductance characteristics. The
transfer gain is nothing but conductance

To draw the Drain Characteristics

The typical Drain characteristics are shown in fig. 1

Id (mA)

VGS=0V

VGS = 1V

VDS

In order to draw the above characteristics perform following steps:

PROCEDURE::

1. Connect the circuit as shown in fig.

2. Set VGS = 0Volt. Keep 0-5Volt variable power supply at anticlock wise
direction for making VGS = 0Volt.
3. Now increase the VDS in step say 1volt starting from zero and observe
the corresponding Drain Current (ID) in mili ammeter.
4. Repeat step 2 for different VGS value say -0.5V,-1V, -1.5, -2V
5. Plot the graph between VDS vs ID
 To draw the transfer characteristics

The typical Drain characteristics are shown in fig. 1

TRANSFER CHARACTERISTICS:

ID ( mA)

VDS = Constant

Fig. 1 VGS (v)

In order to draw the above characteristics perform following steps:

1. The circuit will be same for obtain the transfer characteristics.

2. Set the VDS = 3V. by varying the 0 -12Volt variable power supply.
3. Now increases the VGS in step say -0.5Volt starting from zero and
observe the corresponding drain current ID until ID become zero.
4. Repeat step 2 for different value of VDS.
5. Plot the graph between VGS vs ID.
 OBSERVATION TABLE FOR DRAIN CHARACTERISTICS

VGS = 0Volt VGS = 0.5Volt VGS =-1Volt VGS = -2Volt

VDS(Volt) ID (mA) VDS(Volt ID (mA) VDS(Volt ID (mA) VDS(Volt ID (mA)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
6
7
8

OBSERVATION TABLE FOR TRANSFER CHARACTERISTICS

VDS = 3Volt VDS = 5Volt

VGS (Volt) ID (mA) VGS (Volt) ID (mA
0 0
-0.5 -0.5
-1 -1
-1.5 -1.5
-2 -2
-2.5 -2.5
-3 -3
-3.5 -3.5
-4 -4
-5 -5
Calculation ;

The various parameters of a JFET are:

1.AC DRAIN RESISTANCE, rd : It is the resistance between drain and source terminals
when JFET is in the Pinch-off region.

rd = change in VDS / change in ID.

2.TRANSCONDUCTANCE (gm): Slope of transfer characteristic.

gm = change in ID/ change in VGS

3.AMPLIFICATION FACTOR: It is given by

A.F.= Change in VDS / Change in VGS.

4.DC DRAIN RESISTANCE, Rds: It is given by –

RDS = VDS/IDS

Result
.AC DRAIN RESISTANCE =---------------------
TRANSCONDUCTANCE (gm) =---------------------
AMPLIFICATION FACTOR =------------------------
DC DRAIN RESISTANCE, R =------------------------

PRECAUTIONS:-
1. Do not exceed the ID drain current 10mA.
2. Take proper care of terminates of JFET while fixing in the board.
 EXPERIMENT NO- 7

AIM:-
To draw the
(iii)Drain characteristics
(iv)Transfer characteristics
Of N-channel Metal oxide field effect transistor (MOSFET)

APPARATUS REQUIRED :

Experimental Kit
Voltmeter 0-20Volt 01Nos
Voltmeter 0-5V 01Nos
Ammeter 0-20mA 01Nos
Connecting Wire

Circuit Diagram:

2N317 IC 1k

1k D
0 -20 mA

G
S

VGS
0 -12 V DC
0 - 5Volt DC VDS
0 - 5 V DC 0 - 20 Volt DC

Circuit Diagram of N Channel MOSFET (Depletion mode)

2N317 IC 1k

1k D
0 -20 mA

G
S

VGS
0 -12 V DC
0 - 5 V DC 0 - 5Volt DC VDS
0 - 20 Volt DC

Circuit Diagram of N Channel MOSFET (E mode)

Theory

MOSFET is a three terminal device(drain, source, gate)similar to BJT. The difference

between them is that the MOSFET is a voltage controlled device ,whereas BJT is a current
controlled device. Figure 6-1: The Metal Oxide Field Effect Transistor(NTE 312)Drain
Characteristics: Whereas for BJT the relationship between an output parameter, Ic, and
an input parameter, Ib, is given by a constant _, the relationship in MOSFET between an
output parameter ,Id and an input parameter, Vgs is more complex. In the saturation
region, there exists a square-law transfer relationship.

Transconductance Characteristics: In the transfer characteristics of a two port

network, the input parameter is changed and its effect on the output parameter is
observed. Similarly MOSFET can be treated as a two port nonlinear network. The transfer
characteristics wherein the input parameter is the voltage across gate and source, and the
output parameter is the drain current are called the trans-conductance characteristics. The
transfer gain is nothing but conductance

To draw the Drain Characteristics

The typical Drain characteristics are shown in fig. 1

Id (mA)

VGS=0V

VGS = 1V

VDS

In order to draw the above characteristics perform following steps:

PROCEDURE::

6. Connect the circuit as shown in fig.

7. Set VGS = 0Volt. Keep 0-5Volt variable power supply at anticlock wise
direction for making VGS = 0Volt.
8. Now increase the VDS in step say 1volt starting from zero and observe
the corresponding Drain Current (ID) in mili ammeter.
9. Repeat step 2 for different VGS value say -0.5V,-1V, -1.5, -2V
10. Plot the graph between VDS vs ID

To draw the transfer characteristics

The typical Drain characteristics are shown in fig. 1

TRANSFER CHARACTERISTICS:

ID ( mA)

VDS = Constant

Fig. 1 VGS (v)

In order to draw the above characteristics perform following steps:

6. The circuit will be same for obtain the transfer characteristics.

7. Set the VDS = 3V. by varying the 0 -12Volt variable power supply.
8. Now increases the VGS in step say -0.5Volt starting from zero and
 observe the corresponding drain current ID until ID become zero.
9. Repeat step 2 for different value of VDS.
10. Plot the graph between VGS vs ID.

OBSERVATION TABLE FOR DRAIN CHARACTERISTICS

VGS = 0Volt VGS = 0.5Volt VGS =-1Volt VGS = -2Volt

VDS(Volt) ID (mA) VDS(Volt ID (mA) VDS(Volt ID (mA) VDS(Volt ID (mA)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
6
7
8
 OBSERVATION TABLE FOR TRANSFER CHARACTERISTICS

VDS = 3Volt VDS = 5Volt

VGS (Volt) ID (mA) VGS (Volt) ID (mA
0 0
-0.5 -0.5
-1 -1
-1.5 -1.5
-2 -2
-2.5 -2.5
-3 -3
-3.5 -3.5
-4 -4
-5 -5

Calculation ;

The various parameters of a MOSFET are:

1.AC DRAIN RESISTANCE, rd : It is the resistance between drain and source terminals
when MOSFET is in the Pinch-off region.

rd = change in VDS / change in ID.

2.TRANSCONDUCTANCE (gm): Slope of transfer characteristic.

gm = change in ID/ change in VGS

3.AMPLIFICATION FACTOR: It is given by

A.F. = Change in VDS / Change in VGS.

4.DC DRAIN RESISTANCE, Rds: It is given by –

RDS = VDS/IDS
Result
.AC DRAIN RESISTANCE =---------------------
TRANSCONDUCTANCE (gm) =---------------------
AMPLIFICATION FACTOR =------------------------
DC DRAIN RESISTANCE, R =------------------------

PRECAUTIONS:-
3. Do not exceed the ID drain current 10mA.
4. Take proper care of terminates of MOSFET while fixing in the board.
 EXPERIMENT N0 - 8

Object: To study of Rectifier circuits

I Half Wave Rectifier
II Full Wave Rectifier
III Bridge Rectifier
And find ripple factor and different filter circuit.

APPARATUS REQUIRE
1. Experimental Kits
2. CRO
3. Connecting leads

Theory
In electronics, a diode is a two-terminal component, almost one that has electrical
properties which vary depending on the direction of flow of charge carriers through it
(this directionality is sometimes generically called the rectifying property).The most
common function of a diode is to allow an electric current to flow in one direction
(called the forward biased condition) but to block it in the opposite direction (the
reverse biased condition).Thus, the diode can be thought of as an electronic version of a
check valve. Real diodes do not display such a perfect on-off directionally but usually
have complicated and non-linear electrical characteristics, which depends on the
particular type of diode technology. Diodes also have many other functions in which
they are not designed to operate in this on-off manner.
Early diodes included “cat’s whisker” crystals and vacuum tube device is called
thermionic valves in British English). Today the most common diodes are made from
semiconductor materials such as silicon or germanium.

Rectifier-an application of Diodes

A rectifier is an electrical device that converts A.C. to D.C., a process known as

rectification. Rectifiers are used as component of power supplies and as detectors of
radio signals. Rectifiers may be made of solid state diodes, vacuum tube diodes,
mercury arc valves, and other components.
A circuit which performs the opposite function (converting DC to AC) is known as an
inverter. When only one diode is used to rectify AC (by blocking the negative or positive
portion of the waveform), the difference between the term diode and the term rectifier
is merely one of usage i.e. the term rectifier describes the diode that is being is being
used to convert A.C. to D.C. Almost all rectifiers comprise number of diodes in a
specific arrangement for more efficiently for converting A.C. to D.C. than is possible
with only one diode. Before the development of silicon rectifiers, vacuum tube diodes
and copper oxide or selenium rectifier stacks were used.
Half-wave rectification:
A half wave rectifier is a special case of clipper. In half wave rectification either the
positive or negative of the A.C. wave is passed easily, while the other half is blocked,
depending upon the polarity of the rectifier. Because only one half of the input
waveform reaches is the output, it is very inefficient if used for power transfer. Half
wave rectification can be achieved with a single diode in a one phase supply.

Circuit Diagram for Half Wave Rectifier

D1
0-9V
1 3

AC 230V
Primary RL
FREQ = 50Hz 2 4 1k

Procedure (a)
i. Make connections for half wave rectifier as shown in figure.
ii. Observe the input wave from on oscilloscope
(Transformer Secondary Voltage i.e 9-0-9 Volt)
iii. Observe the output wave form on oscilloscope.
iv. Measure the DC voltage VDC across the load.
v. Draw output waveform.
vi. Measure r.m.s. value of output voltage.
vii. Ripple factor γ = √ (V2rms /V2DC) -1
 Full Wave Rectifier with center tapped transformer

9-0-9V D1

1 5

AC 230V 6
Primary
FREQ = 50Hz 4 8 RL

1k
D2

Procedure for full wave rectifier

i Make connection for full wave rectifier as shown in fig.
ii) Repeat steps (ii) to (vi) in (a)
iii) calculate ripple factor ,γ

Full Wave Rectifier Without Filter

VmSinωt (Vin) RL VDC Ripple factor

 Full Wave Rectifier without center tapped transformer

bridge rectif er
TRNSFMR 0-9V

2
T4
1 5

- +
4 1
AC 230V
4 8
FREQ = 50Hz

RL

3
1k

Procedure for Bridge rectifier

i Make connection for Bridge Rectifier as shown in fig.
ii Repeat steps (ii) to (vi) in (a)
iii calculate ripple factor

Bridge Rectifier Without Filter

VmSinωt (Vin) RL VDC Ripple factor

Filter Circuit
Capacitor `input Filter

220MFD
Load Resistor out put

C1 1k

Inductor Filter

L1

f ilter inductor Load Resistor

1k
out
put
II TYPE FILTER

L1

Filter Inductor

C1 Load Resistor
C2
INPUT 200mf d OUTPUT
220mf d 1k

RC Filter

1k

C1 Load Resistor
C2
INPUT 200mf d OUTPUT
220mf d 1k
 EXPERIMENT NO - 9

Object: To study of clipping and clamping circuits.

APPARATUS REQUIRED:-
1. Experimental Kit
2. Signal Generator
3. CRO
4. Connecting leads

Theory:
Clipper
The electronic device that is used to limit an Voltage to certain levels is called
a limiter or clipper. It can clip in negative , positive or both alternation of an A.C
Voltage. Clipping circuit are of various types.
1. Series Clipper
2. Parallel Clipper
3. Series bias clipper
4. Parallel bias clipper

Series Clipper Circuits

D1

Signal Generator DIODE Load Resistance

10k Out Put

FREQ = 1KHz
5 Volt

A Series Negative Clipper Circuit

D1

Signal Generator DIODE Load Resistance

10k
FREQ = 1KHz Output
5 Volt

A Series Positive Clipper Circuit

 Series Clipper Circuits with DC Bias

Vref .
D1

Signal Generator DIODE

Load Resistance
FREQ = 1KHz Output
10k
5 Volt

A Series Clipper Circuit With DC Bias

If Vin ≤ Vref. Vo = o
If Vin > Vref. Vo = Vin – Vref.

Vref . D1

Signal Generator DIODE

Load Resistance
FREQ = 1KHz Output
10k
5 Volt

A Series Clipper Circuit With DC Bias

If Vin ≥ 0 Vo = Vin
For negative value of Vin Vo = 0

Parallel Clipper Circuits

Resistance

Signal Generator 10k D1

DIODE
FREQ = 1KHz Output
5 Volt

A Parallel Clipper Circuit

 Resistance

Signal Generator 10k D1

DIODE
FREQ = 1KHz Output
5 Volt

A Parallel Clipper Circuit

Parallel Clipper Circuits with DC Bias

Resistance

D1
Signal Generator 10k
DIODE

FREQ = 1KHz Output

Vref.
5 Volt

Resistance

D1
Signal Generator 10k
DIODE

FREQ = 1KHz Output

Vref .
5 Volt

Resistance

D1 D2
Signal Generator 10k
DIODE
DIODE
FREQ = 1KHz Output
Vref .
5 Volt Vref .

Two Way Parallel Clipper Circuit

 Clamper Circuit

C1

.01mf d D1
Signal Generator 10k
DIODE Resistance
FREQ = 1KHz Output
5 Volt

C1

.01mf d D1
Signal Generator 10k
DIODE Resistance
FREQ = 1KHz Output
5 Volt

Clamper Circuit with DC Bias

C1

.01mf d D1
Signal Generator 10k
DIODE Resistance
FREQ = 1KHz Output
Vref .
5 Volt

Procedure
1. Connect the circuit using suitable patch cord as shown in circuit diagram.
2. Apply a Sinusoidal input of 5 volt and 1 kHz. (Use signal Generator for
Sinusoidal input).
3. Observe the input signal on channel 1 on CRO and out put signal from
circuit on channel 2 on CRO.
4. Repeat the experiment for different clipping and clamping circuits.

Result
Sketch the wave shape and label the Amplitudes.
Indicate the type of clipping in each case.
Draw transfer characteristics for different clipping and clamping circuits.