ISSN: 2320-5407 Int. J. Adv. Res.

12(08), 259-270

Journal Homepage: -www.journalijar.com

Article DOI:10.21474/IJAR01/19251
DOI URL: http://dx.doi.org/10.21474/IJAR01/19251

RESEARCH ARTICLE
SIMULTANEOUS EFFECT OF SDL AND MOSE2 LAYERS ON CIGS SOLAR CELL PERFORMANCE
AND STRATEGY FOR IMPROVING ULTRA-THIN CIGS SOLAR CELL PERFORMANCE

Boureima Traoré, Adama ZONGO, Issiaka Sankara, Soumaïla Ouédraogo, Daouda Oubda, Marcel
Bawindsom Kébréand Francois ZOUGMORE
Département de Physique, Laboratoire de Matériaux et Environnement (LA.M.E)-UFR/SEA, Université Joseph Ki-
ZERBO, 03 BP 7021 Ouagadougou 03, Burkina Faso.
……………………………………………………………………………………………………....
Manuscript Info Abstract
……………………. ………………………………………………………………
Manuscript History In this paper, based on numerical simulation, the SCAPS-1D software
Received: 09 June 2024 was used to simultaneously study the influence of the surface defect
Final Accepted: 11 July 2024 layer (SDL) and the molybdenum diselenide layer (MoSe 2) on the
Published: August 2024 performance of the CIGS solar cell. These two defects layers are
respectively formed at the front interface (CdS/CIGS) and the back
Key words:-
CIGS Solar Cell, MoSe2, SDL, SCAPS- interface (CIGS/ Mo) by atomic inter-diffusion. Simultaneous analysis
1D Software, Ultra-Thin Solar Cell of SDL and MoSe2 layers thickness revealed that optimum performance
is achieved for 10 nm thickness of SDL layer and 35 nm thickness of
MoSe2. A study of the gap energy revealed that optimum performance
is obtained for 1.25 eV energy gap SDL layer and 1.35 eV energy gap
of MoSe2 layer. Next, a performance study of the ultra-thin CIGS solar
cell with optimized SDL and MoSe2 layers was carried out. It was
found that the presence of the SDL and MoSe2 layers optimized
improves the electrical performance of the ultra-thin CIGS solar cell.

Copy Right, IJAR, 2024,. All rights reserved.

……………………………………………………………………………………………………....
INTRODUCTION:-
In CIGS-based thin-film solar cells, the front interface CdS/CIGS plays an important role in the separation of
electron-hole pairs, and the back interface CIGS/Mo is a zone of very high recombination, particularly for ultra-thin
solar cells. Defects at these interfaces can make a significant contribution to improving the performance of CIGS-
based thin-film solar cells. At the front interface CdS/CIGS and back interface CIGS/Mo, atomic inter-diffusion is
observed[16]. At the front interface CdS/CIGS, cadmium (Cd) diffuses into the CIGS absorber and selenium (Se)
diffuses into the CdS buffer layer [5]. In addition to the diffusion of cadnium (Cd) into the absorber, cadnium (Cd)
diffuses into the surface regions of the CIGS absorber.Wada et al. showed the contact between Mo and CIGSto be
ohmic, owing to the formation of an intermediateMoSe2 layer during CIGS deposition [33]. At the back interface
CIGS/Mo, selenium (Se) from the absorber diffuses to the surface regions of the back contact (molybdenum) due to
its permeability[17, 34]. This phenomenon occurs during the CIGS deposition process on the molybdenum back
contact [35]. Several X-ray photoelectron spectrometry (XPS) studies have shown the presence of very thin indium-
rich (CuIn3Se5) n-type layers on the surface of the CIGS absorber [4, 29]. This thin layer, identified as a surface
defect layer (SDL), has a different composition to that of the CIGS absorber volume[11]. Many studies agree that
the SDL contributes to better adhesion between the Mo and the glass substrate[14, 33]. The layer acts in a beneficial
way by changing the Schottky-type CIGS/Mo hetero-contact into an ohmic-type contact[14, 27]. Three factors may
be responsible for the formation of the MoSe2 layer. This layer may be due to the pressure during molybdenum
sputtering [17, 18], to the concentration of sodium present in the soda-lime glass that diffuses into the CIGS

Corresponding Author:-Boureima Traoré 259

Address:-Département de Physique, Laboratoire de Matériaux et Environnement (LA.M.E)-
UFR/SEA, Université Joseph Ki-ZERBO, 03 BP 7021 Ouagadougou 03, Burkina Faso.
ISSN: 2320-5407 Int. J. Adv. Res. 12(08), 259-270

absorber[33, 34], and finally to the selenization temperature [1]. Several studies have shown that the performance of
ultra-thin CIGS-based solar cells is poor. However, what influence can the SDL and MoSe2 layers have on CIGS
solar cell performance? What influence might the thickness and band gap of these two layers have on CIGS solar
cell performance? Can optimal values for the thickness and gap energy of these two defect layers improve the
performance of the ultra-thin CIGS solar cell? In this paper, we will simultaneously investigate the influence of the
thickness and gap energy of the SDL and MoSe2 layers on CIGS solar cell performance. Subsequently, a strategy for
optimizing the performance of the ultra-thin solar cell with optimized SDL and MoSe2 layers will be made.

Material and Methods:-

Numerical simulation is a method used by researchers to study the impact of optoelectronic parameters on solar cell
performance without actually performing an experiment. It makes it possible to characterize the behavior of a PV
solar cell without performing an experiment. It reduces PV solar cell manufacturing costs. In this study, we plan to
use the SCAPS-1D software [17]. to carry out our numerical simulations. The choice of this software lies in the fact
that there is a good compromise between experimental results and numerical simulation[21, 23]. The SCAPS-1D
software uses the finite-difference method with well-defined boundary conditions to solve the basic equations of the
poisson equation, the electron continuity equation and the hole continuity equation[20]. The Poisson equation is a
second-order partial differential equation (PDE) and is given by the following relation :
𝛛𝐧
𝛁𝐉𝐧 = 𝐪 𝐑 𝐱 − 𝐆(𝐱) + 𝐪
𝛛𝐭
𝛛𝐩
𝛁𝐉𝐩 = 𝐪 𝐆 𝐱 − 𝐑(𝐱) + 𝐪
𝛛𝐭
ε = ε0.εr is the dielectric permittivity with ε0is the permittivity of the vacuum and εris the relative permittivity
of the material and ρ is the volume density of the free charges.𝐆(𝐱)and 𝐑(𝐱)are respectively generation and
recombination rates of electrons and holes, 𝐉𝐧and 𝐉𝐩 are the densities of electron currents and holes.
𝐧 and 𝐩 are the densities of electron and holes, 𝐄 is electrical field and V is electrical potential.

CIGS-based thin-film solar cells are heterojunction cells in which the p-type CIGS is the cell's absorber. The CIGS
absorber is the most important layer of the device and occupies most of the volume of the solar cell [10, 26]. On this
absorber, an n-type CdS buffer layer provides the P-N junction. A layer of high-resistivity transparent conductive
oxide (TCO) is deposited on the buffer layer. As the TCO layer, we used a thin layer of intrinsic zinc oxide (i-ZnO)
onto which we deposited a thick layer of uluminium-doped zinc oxide (ZnO:Al). The assembly is deposited on a
substrate, which is the mechanical support. Generally speaking, soda-lime glass is the most widely used substrate in
high-efficiency CIGS cells because of its properties compatible with the CIGS absorber[4, 28]. Ni/Al and Mo ohmic
contacts are added to collect photo-generated electrons and holes. The structure of such a solar cell is shown in
Figure 1 a.

Figure 1:-Solar cell structure (a) without SDL and MoSe2 layers and (b) with SDL and MoSe2 layers used for
numerical simulation.

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At the front and back interfaces of the CIGS solar cell, the surface defect layer (SDL) due to atomic interdiffusion
phenomena and the molybdenum diselenide layer due to diffusion of selenium from the absorber are shown in
Figure 1.b. The equivalent band diagram of the solar cell with the SDL and molybdenum layers is shown in Figure
2.

Figure 2:- Energy band diagram of solar cell with SDL and MoSe2 layers.

To characterize solar cell performance, we'll use the current-voltage (J-V) characteristic and quantum efficiency.
The current-voltage (J-V) characteristic is used to analyze the electrical performance of solar cells. The curve of the
solar cell's (J-V) characteristic is shown in Figure 3. Quantum efficiency (Q-E) describes the probability that an
incident photon arriving at the surface of the device will create an electron-hole pair that can be collected and
contribute to the device's current [7, 26].

Figure 3:- Current-voltage (J-V) characteristic of a CIGS solar cell.

The properties of the various layers and interfaces used in the numerical simulation are summarized in Table 1.

Table 1:- The solar cells simulation parameters used in SCAPS-1D [22].
ZnO/Al CdS CIGS
Thickness (nm) 100 50 2500

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Band gap (eV) 3.3 2.4 1.25

Electron Affinity (eV) 4.55 4.5 4.5

Diélectric relative Permittivity 9.00 10 13.6
Effective densité of state in BC 3.1 ∗ 1018 3.1 ∗ 1018 2 ∗ 1018
(𝐜𝐦−𝟑 )
Effective densité of state in BV 1.8 ∗ 1019 3.1 ∗ 1018 1.5 ∗ 1019
−𝟑
(𝐜𝐦 )
Electrons thermal velocity (cm/s) 2.4 ∗ 107 3.1 ∗ 107 3.9 ∗ 107
7
Holes thermal velocity (cm/s) 1.3 ∗ 10 1.6 ∗ 107 1.4 ∗ 107
𝟐
Electrons Mobility (𝐜𝐦 𝐕𝐬) 100 72 100
Holes Mobility (𝐜𝐦𝟐 𝐕𝐬) 31 20 12.5
Doping density (𝐜𝐦−𝟑 ) 1 ∗ 1017 (D) 5 ∗ 1017 (D) 1 ∗ 1016 (A)
The properties of the SDL and MoSe2 layer are summarized in Table 2.

Table 2:- The parameters of SDL and MoSe2 used in SCAPS-1D[7].

SDL MoSe2
Thickness (nm) Variable variable

Band gap (eV) Variable variable

Electron Affinity (eV) 4.5 4.372

Diélectric relative Permittivity 13.6 13.6

Effective densité of state in BC (𝐜𝐦−𝟑 ) 3.1 ∗ 1018 2.2 ∗ 1018
Effective densité of state in BV (𝐜𝐦−𝟑 ) 3.1 ∗ 1018 1.8 ∗ 1019
Electrons thermal velocity (cm/s) 3.1 ∗ 107 107
Holes thermal velocity (cm/s) 1.6 ∗ 107 107
Electrons Mobility (𝐜𝐦𝟐 𝐕𝐬) 72 100
Holes Mobility (𝐜𝐦𝟐 𝐕𝐬) 20 25
Doping concentration (𝐜𝐦−𝟑 ) 5 ∗ 1017 (D) 1016

Figure 4:-J-V characteristiccurves compared with experimental results from Pettersson and al. [21].

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These properties were obtained from theoretical and experimental results [8, 22, 24]. The solar cell is illuminated
under standard conditions by an AM 1.5G spectrum that accounts for direct and diffuse radiation and the solar cell
temperature is maintained at 300K.To validate our results, we compared the J-V characteristic curves of our
numerical simulation with those obtained experimentally by Pettersson. We can see that there is good agreement
between these two results, as shown in Fig. 4, which leads us on to the results and discussion section.

Results and Discussion:-

Comparative study of CIGS solar cell performance with and without SDL and MoSe2 layers.
In this section, we will study the performance of the CIGS-based thin-film solar cell with and without the presence
of the surface defect layer (SDL) and the molybdenum diselenide (MoSe2) layers. A good understanding of the
physical parameters of the SDL layer and the MoSe2 layer resulting from atom interdiffusion phenomena can be a
major asset in optimizing solar cell performance. The SDL layer contributes to improved adhesion between the back
contact (Mo) and the soda-lime glass substrate [2, 14]. The SDL layer causes wide bending of the strips and
contributes to improved cell performance [22, 30]. However, can the simultaneous presence of these defect layers at
the front and back interfaces contribute to improving the performance of the CIGS solar cell? To carry out this work,
we analyzed the performance of the CIGS solar cell through the J-V characteristic. The characteristic curves (J-V) of
the CIGS solar cell with and without the layers and SDL are shown in Figure 5.The differences between the both
characteristic curves (J-V) are rather small. In reality, it would be very complicated to measure differences between
these both curves.

Figure 5:- J-V characteristics of solar cell performance with and without SDL and MoSe2.

To solve this problem,we have extracted the electrical parameters of the solar cell with and without SDL layer and
MoSe2from the J-V characteristic curve. These electrical parameters are summarized in Table 3.

Table 3:- Electrical parameters of the solar cell with and without the SDL and MoSe2.

𝐕𝐎𝐂 (𝐕) 𝐉𝐒𝐂 (𝐦𝐀/𝐜𝐦𝟐 ) 𝐅𝐅 (%) 𝛈 (%)

Without SDL and

1.1918 30.5585 59.50 21.67
𝐌𝐨𝐒𝐞𝟐

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With SDL and

1.1886 30.3412 59.54 21.47
𝐌𝐨𝐒𝐞𝟐

From this table 3, it's clear that the simultaneous presence of the SDL and MoSe2 layers reduces the CIGS solar
cell's performance. All the solar cell's electrical parameters are reduced. In the presence of the SDL and MoSe2
layers, the solar cell's conversion efficiency falls from 21.6768% to 21.4020%, resulting in a loss in conversion
efficiency ∆η = - 0.2%. The same applies to open-circuit voltage VOC and short-circuit current density JSC. This
decrease in all electrical parameters can be explained by a reduction in the absorption of incident photons into
electron-hole pairs in the presence of the SDL and MoSe2 layers, as shown in figure 6.

Figure 6:-Q-E quantum efficiency of solar cell performance with and without SDL and MoSe2.

At the end of the study in this section, it appears that the presence of the SDL and MoSe2 layers reducesslightly the
solar cell's performance. However, what influence can the thickness of the SDL and MoSe2 layers have on the
performance of the CIGS solar cell?

Influence of SDL and MoSe2 layer thickness on CIGS solar cell performance.
In this section, we will simultaneously study the influence of SDL and layer thickness on CIGS solar cell
performance, as shown in Figure 7. The SDL layer has an estimated thickness of between 50 nm and 100 nm (Li et
al., 2012). To achieve this, we vary the thickness of the SDL and MoSe layers from 5 nm to 100 nm.

Figure 7:- Influence of thicknesses of SDL and MoSe2 layers on electricals parameters.

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In general, all the cell's electrical parameters follow the same progression, as shown in Figure 7. This study shows
that solar cell performance decreases linearly with increasing SDL layer thickness. It also shows that solar cell
performance varies very little with increasing layer thickness. From the following, we can affirm that the thickness
of the SDL influences the performance of the CIGS solar cell more than the thickness of the layer. We can see that
good performance is obtained for low values of SDL thickness (W SDL = 20 nm). To obtain an optimum value for
the layer thickness, we will vary its thickness from 5 to 100 nm, while fixing the SDL thickness at 15 nm.

Figure 8:- Solar cell electrical parameters as a function of SDL layer thickness.

The electrical parameters of the solar cell vary only slightly as the layer thickness varies. For a layer thickness of
less than 35 nm, all the solar cell's electrical parameters increase. Above 35 nm, the open-circuit voltage, efficiency
conversion and form factor decrease. As for the density short-circuit current, it increases. Optimum performance of
the CIGS cell is achieved at a layer thickness of between 30 and 40 nm. At the end of this study, it appears that
optimum performance of the CIGS solar cell is obtained for low SDL and MoSe2 layers thicknesses of the order of
15 nm and 35 nm respectively. However, what influence can the gap energy of the SDL and MoSe2 layers have on
CIGS solar cell performance?

Influenceof gap energy of SDL and MoSe2 layers on CIGS solar cell performance.
The numerical simulation carried out in this section will focus on the gap energy of the MoSe2 and SDL layers,
varying them from 1.0 eV to 1.45 eV and 1.0 eV to 1.5 eV respectively. Varying the gap energy of the MoSe2 and
SDL layers influences the J-V characteristic of the solar cell, as shown in Figure 9.

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Figure 9:-J-V characteristic of solar cell for differentsenergy bandgaps of SDL and MoSe2layers.

For a better understanding of the J-V characteristic curves, we have extracted the electrical parameters. These
electrical parameters were then used to construct the curves shown in Figure 10. Figure 10.b shows that la density
current short-circuit (Jsc) decreases when gap energy is less than 1,25 eV (Eg (SDL)<1,25eV), whatever the gap
enrgy of MoSe2. Above this value, the Jsc is almost independent of the SDL and MoSe gap energy. Electricals
parameters such as open-circuit voltage (Voc), form factor (FF) and solar cell efficiency (η) decrease when gap
energy of SDL is less than 1,25 eV ( Eg (SDL)<1,25eV) and when gap energy ofMoSe2is greater than 1,35 eV (Eg
(MoSe2)>1,35eV).

Figure 10:- Influence of gap energy of SDL and 𝑴𝒐𝑺𝒆2 layers on electricals parameters.

At the end of this study, it was found that optimum performance of the CIGS solar cell is obtained for Eg
(SDL)=1,25eV and Eg (MoSe2)>1,35eV. These electrical parameters will be used to design a solar cell with
optimized SDL and MoSe2 layers.

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Comparative study of the performances CIGS solar cell

The study carried out in the previous sections shows us that there is an improvement in the performance of the CIGS
solar cell for optimum gap energies such as (Eg (SDL)=1,25eV et Eg (MoSe2)=1,35eV) and for optimum
thicknesses such as (W(SDL)=10 nm et W(MoSe2)=35 nm. These optimum values were then used to develop a new
solar cell with optimized SDL and MoSe2 layers. In this section, we will compare the performance of the new solar
cell with optimized SDL and MoSe2 layers with that of the solar cell with SDL and MoSe2. The simulation results
are summarized in Table 4.

Table 4:- Electrical parameters of the solar cell with and without the SDL and MoSe2 layers optimals.
𝐕𝐎𝐂 (𝐕) 𝐉𝐒𝐂 (𝐦𝐀/𝐜𝐦𝟐 ) 𝐅𝐅(%) 𝛈(%)
With SDL and 𝐌𝐨𝐒𝐞𝟐 1.1886 30.3412 59.54 21.47
With SDL and 𝐌𝐨𝐒𝐞𝟐
1.1216 30.4175 63.17 21.54
optimals

In this table, we can see that there is a clear improvement in the performance of the solar cell with the optimal SDL
and MoSe2 layers compared with the performance of the solar cell with the SDL and MoSe2 layers. However, the
performance of the solar cell with the SDL and optimal layers is lower than the performance of the solar cell without
the SDL and MoSe2 layers. However, can the use of the optimal SDL and MoSe2 layers contribute to improving the
performance of the ultra-thin CIGS solar cell?

Strategy for improving the performance of the ultra-thin CIGS solar cell.
To save on the raw materials indium and gallium, research is increasingly focusing on ultra-thin CIGS solar cells,
i.e. with a relatively small absorber thickness (W CIGS< 0,5 μm).In order to improve solar cell performance, we
should obtain a compromise between manufacturing cost and high-value efficiency. In this context, it is necessary to
reduce the thickness of CIGS absorber [32].Several studies have shown that CIGS solar cell performance decreases
with decreasing absorber thickness [5]. It was clearly stated in Ref. [32] that growing an ultrathin layer of CIGS on
Mo, with athickness of less than 0.5 μm, can significantly degrade photovoltaic efficiency due to recombination
losses and poor reflectivity at the CIGS/Mo interface.Several authors have proposed techniques to improve the
performance of ultra-thin solar cells CIGS.Heriche et al.They have demonstrated that the inserted Si layer as the
second absorber, boosts the solar cell efficiency from 16.39% to 21.3%[10]. For improve the performances of ultra-
thin CIGS,Boubaker et al.has been also demonstrated that the addition silicon to reduce the thickness of CIGS
improve the performances of ultra-thin CIGS with gallium content equal to 20 when the thickness of the absorber
layer has been reduced to 0.75 µm [10]. To carry out our numerical simulation, we set the absorber thickness of the
ultra-thin CIGS solar cell at 0.5 µm. The electricals parameters of this numerical simulation are summarized in
Table 5.

Table 5:- Electrical parameters of the ultra-thin solar cell with and without the SDL and MoSe2 layers optimals.
𝐕𝐎𝐂 (𝐕) 𝐉𝐒𝐂 (𝐦𝐀/𝐜𝐦𝟐 ) 𝐅𝐅(%) 𝛈(%)
Without SDL and 𝐌𝐨𝐒𝐞𝟐 0.8935 24.8635 73.76 16.49
With SDL and 𝐌𝐨𝐒𝐞𝟐 optimals 0.9043 25.0575 73.57 16.63

From this table, we can see that the presence of the SDL and optimized MoSe2 layers improves the conversion
efficiency of the ultra-thin solar cell from 16.49% to 16.63%, i.e. a gain in conversion efficiency ∆η = 0.14%. The
same applies to open-circuit voltage with a gain ∆V_OC = 0.01 V and short-circuit current density with a gain
∆J_SC = 0,19%. These performances can be explained by an increase in the absorption of incident photons with
wavelengths between 500 nm and 900 nm, as shown in figure 8.

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Figure 11:- Quantum efficiency of the performances of solar cell ultra-thin with the SDL and MoSe2 layers and
with the SDL and MoSe2 layers optimals.

This increase in the electrical parameters of the solar cell ultra-thin with optimal SDL and MoSe2 layers can be
explained by the presence of the thin film that acts as an electron reflector at the back interface CIGS/Mo. This thin
layer helps reduce charge carrier recombination at the back interface[28]. These performances may also be due to
the presence of the thin SDL layer, which contributes to enlarging the space charge zone (SCZ). It may be explained
by the reduced interaction between the holes collected at the back contact and the electrons photogenerated in the
ultrathin absorber.

Conclusion:-
In our numerical simulation work, we have studied the performance of the CIGS-based thin-film solar cell with and
without the presence of the SDL and MoSe2 layers. This study shows that the performance of the CIGS solar cell
improves for optimals gap energies such as (Eg (SDL)=1,25eV and Eg (MoSe2 )=1,35eV) and optimals thicknesses
such as (W(SDL)=10 nm and W(MoSe2)=35 nm). Next, a performance study of the ultra-thin solar cell with SDL
and MoSe2optimized layers was carried out. This showed that the presence of the SDL and MoSe2 layers optimized
layers improved the conversion efficiency of the ultra-thin solar cell by 0.14%.The results obtained in thisstudy
provide a pathway to improve and design ultra-thin cells with high conversion efficiency.

Competing interests
Theauthors declare no conflicts of interest regarding the publication of this paper.

Acknowledgements:-
Theauthorsacknowledge the use the SCAPS 1D program developed by Marc Burgelman at colleagues at the
University of Gent.

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