Lec 2 Elec

Electronic Devices and Circuits 3
Lecture 2
 Operation
 Transistor DC model
 BJT circuit analysis
 Collector characteristic curve
 Cutoff
 Saturation
 DC laod line
 Operation transistor
To understand how a transistor operates, let’s examine what happens
inside the npn structure. The heavily doped n-type emitter region
has a very high density of conduction-band (free) electrons.
the base region recombine with holes and move as valence electrons
through the base region and into the emitter region as hole current.
 DC Beta (βDC) and DC Alpha (αDC)
 The dc current gain of a transistor is the ratio of the dc collector current (Ic) to
the dc base current (IB) and is designated dc beta (βDC ).
 Typical values of βDC range from less than 20 to 200 or higher. βDC is usually
designated as an equivalent hybrid (h) parameter, hFE, on transistor datasheets.
 The ratio of the dc collector current (Ic) to the dc emitter current (IE ) is the dc
alpha (αDC). The alpha is a less-used parameter than beta in transistor circuits.
 Typically, values of αDC range from 0.95 to 0.99 or greater, but αDC is always
less than 1. The reason is that Ic is always slightly less than IE by the amount of
IB.
 Transistor DC Model
BJT as a device with a current input and a dependent current source in the output
circuit,. The input circuit is a forward-biased diode through which there is base
current. The output circuit is a dependent current source (diamond-shaped
element) with a value that is dependent on the base current.
 BJT Circuit Analysis
 Collector Characteristic Curves
 Assume that VBB is set to produce a certain value of IB and VCC is
zero. For this condition, both the base-emitter junction and the
base-collector junction are forward-biased because the base is at
approximately 0.7 V while the emitter and the collector are at 0 V.
The base current is through the base-emitter junction because of the low
impedance path to ground and, therefore, Ic is zero. When both junctions are
forward-biased, the transistor is in the saturation region of its operation.
 Saturation is the state of a BJT in which the collector current has reached a
maximum and is independent of the base current.
 Active region As VCC is increased, VCE increases as the collector current
increases. This is indicated by the portion of the characteristic curve between
points A and B. Ic increases as VCC is increased because VCE remains less than
0.7 V due to the forward-biased base-collector junction.
 Break down region: When VCE reaches a sufficiently high voltage, the reverse-
biased base-collector junction goes into breakdown; and the collector current
increases rapidly as indicated by the part of the curve to the right of point C. A
transistor should never be operated in this breakdown region.
 Cutoff: A family of collector characteristic curves is produced when Ic versus
VCE is plotted for several values of IB, When IB =0, the transistor is in the
cutoff region although there is a very small collector leakage current as
indicated. Cutoff is the nonconducting state of a transistor. The amount of
collector leakage current for IB = 0 is exaggerated on the graph for illustration.
 Cutoff
As previously mentioned, when IB= 0, the transistor is in the
cutoff region of its with the base lead open, resulting in a base
current of zero. Under this condition, there is a very small amount
of collector leakage current, ICEO, due mainly to thermally
produced carriers. Because ICEO is extremely small, it will usually
be neglected in circuit analysis so that VCE VCC .
 Saturation
When the base-emitter junction becomes forward-biased and the base current
is increased, the collector current also increases (Ic =βDC IB) and VCE decreases
as a result of more drop across the collector resistor (VCE = VCC - Ic RC). When
VCE reaches its saturation value, VCE(sat), the base-collector junction becomes
forward-biased and Ic can increase no further even with a continued increase in
IB. At the point of saturation, the relation Ic =βDC IB is no longer valid. VCE(sat)
for a transistor occurs somewhere below the knee of the collector curves, and it
is usually only a few tenths of a volt.
 DC Load Line
Cutoff and saturation can be illustrated in relation to the collector characteristic
curves by the use of a load line. a dc load line drawn on a family of curves
connecting the cutoff point and the saturation point. The bottom of the load
line is at ideal cutoff where Ic =0 and VCE =VCC. The top of the load line is at
saturation where Ic =Ic (sat) and VCE = VCE (sat). In between cutoff and
saturation along the load line is the active region of the transistor’s operation.
 More About βDC
The βDC or hFE is an important BJT parameter that we need to examine further. βDC
is not truly constant but varies with both collector current and with temperature.
Keeping the junction temperature constant and increasing Ic causes βDC to
increase to a maximum. A further increase in Ic beyond this maximum point causes
βDC to decrease. If Ic is held constant and the temperature is varied, βDC changes
directly with the temperature. If the temperature goes up, βDC goes up and vice
versa.

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Electronic Devices and Circuits 3

 BJT circuit analysis

 Collector characteristic curve

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