0% found this document useful (0 votes)
10 views2 pages

Question Bank

qbank

Uploaded by

Rohith M N EC
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
10 views2 pages

Question Bank

qbank

Uploaded by

Rohith M N EC
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 2

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINERING

Question Bank
Define PN junction diode. Explain forward and reverse biased PN junction diode along with V-I characteristics.
Explain the common-base configuration of a transistor and give the procedure to obtain the common base input-
output characteristics.
Construct CMOS inverter. Explain how CMOS can be used as inverting switch.
With circuit diagram, Explain the inverting and non-inverting mode of OP-AMP operation.
List the differences between analog and digital signals.
Implement full subtractor using basic gates.
With a neat circuit diagram and relevant waveforms explain the operation of a full-wave bridge rectifier. Find the
PIV for the bridge rectifier.
A full-wave single-phase rectifier consists of two diodes each having internal resistance of 500Ω. The circuit feeds
a pure resistive load of 2000Ω. The secondary voltage with reference to centre tap is 280V. Calculate
a. Peak load voltage
b. Peak load current
c. DC load current
d. Dc output power
e. The percentage regulation
f. PIV across each diode
g. RMS load current
h. RMS load current through each diode
i. DC load voltage
j. Direct current in each diode
For a certain transistor circuit, Ic=12.42mA and Ib=200µA
a. Find IE
b. Find αdc and βdc of the transistor
c. Find Ic when Ib=150µA
For the base-bias circuit shown in Fig 9.1 V CC=18v, RC=2.2kΩ, RB=470Ω, VBE=0.7V. Find the levels of I C and VCE
when hFE(min)=50 and hFE(max)=200. Draw the DC load line and indicate the Q points
List the difference between
a. JFET and BJT
b. DMOSFET and EMOSFET
Describe the common-source configuration of a JFET and sketch the transfer and drain characteristics

Calculate the output voltage of a three-input summing amplifier. Given that


R1=200KΩ, R2=250KΩ, R3=500KΩ, Rf=1MΩ, V1= -2V, V2=2V, V3=1V
Explain how an OP-AMP can be configured as a voltage follower
Explain how an OP-AMP can be used as an integrator
State and prove De Morgan’s theorem

, simplify and implement the given Boolean expression using logic gates

Realize using
a. Only NAND gates
b. Only NOR gates
With neat diagram, Explain the formation of P-N junction and list the applications of it.

For a half-wave rectifier, Derive the expression for


a. DC load current and load voltage.
b. RMS load current and load voltage.

Explain the V- I characteristics of a silicon diode along with the circuit diagram.

With a neat circuit and waveforms explain the operation of a full- wave rectifier using two diodes and a center-
tapped transformer.

Derive the expression for efficiency of bridge rectifier.

A half-wave rectifier with capacitor filter is supplying a resistive load of 1000Ω. The value of filter capacitor is
200µF. If the supply voltage to the rectifier is 220V at 50Hz and DC output voltage (Vdc) is 300V. Calculate
a. Peak load voltage
b. Ripple factor
c. DC load current
d. PIV
e. RMS ripple output voltage
List the difference between JFET and MOSFET.

Draw and explain V-I characteristics of JFET.

Explain the operation of N-channel JFET.

Explain the operation of N-channel MOSFET.

Explain the different types of FET configurations.

With neat circuit diagram explain CMOS inverter.

You might also like