Bipolar Junction

Transistors (BJTs)

1
 Transistor Device structure and Operation

Figure 3.1 A simplified structure of the npn transistor.

Emitter and collector regions having identical physical dimensions (C > E >
B) and doping concentrations (E > C > B)

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 Figure 5.2 A simplified structure of the pnp transistor.

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 Figure 5.3 Current flow in an npn transistor biased to operate in the active mode. (Reverse current components due to drift of thermally
generated minority carriers are not shown.)

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 Figure 5.4 Profiles of minority-carrier concentrations in the base and in the emitter of an npn transistor operating in the active mode: vBE > 0 and
vCB ≥ 0.

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 Some equations (npn device)

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 Collector Current

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 Base Current (npn BJT)
Current due to hole movement
from base to emitter

Current due recombination of

electrons in base

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 Base Current vs Collector current

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 Figure 5.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.

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 Figure 5.6 Cross-section of an npn BJT.

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 Figure 5.7 Model for the npn transistor when operated in the reverse active mode (i.e., with the CBJ forward biased and the EBJ reverse biased).

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 Figure 5.8 The Ebers-Moll (EM) model of the npn transistor.

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 Figure 5.9 The iC –vCB characteristic of an npn transistor fed with a constant emitter current IE. The transistor enters the saturation mode of operation for
vCB < –0.4 V, and the collector current diminishes.

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 Figure 5.10 Concentration profile of the minority carriers (electrons) in the base of an npn transistor operating in the saturation mode.

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 Figure 5.11 Current flow in a pnp transistor biased to operate in the active mode.

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 Figure 5.12 Large-signal model for the pnp transistor operating in the active mode.

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Bipolar Junction Transistors
(BJTs)-Part-II
By

Prof. Subrata Maiti

Department of Electronics and Communication Engineering,
NIT Rourkela
E-mail:[email protected]

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 Circuit Symbols of BJT

Figure 5.13 Circuit symbols for BJTs.

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 Directions of Voltage and Current in
Transistor

Figure 5.14 Voltage polarities and current flow in transistors biased in the active mode.

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 Definition of Active Mode

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 Current-Voltage Relationship of
Transistor
npn pnp

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 Current-Current Relationship of
Transistor

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 Exercises
The transistor in the circuit of Fig. 5.15(a) has β = 100 and exhibits a vBE of 0.7 V at iC = 1 mA.
Design the circuit so that a current of 2 mA flows through the collector and a voltage of +5 V
appears at the collector.

Figure 5.15 Circuit for Example 5.1.

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 Exercises

In the circuit shown in Fig. E5.10, the voltage at the

emitter was measured and found to be –0.7 V. If β = 50,
find IE, IB, IC, and VC.

Figure E5.10

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 Exercises

In the circuit shown in Fig. E5.11, measurement

indicates VB to be +1.0 V and VE to be +1.7 V.
What are α and β for this transistor? What voltage VC
do you expect at the collector?

Figure E5.11

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 The iC–vBE Characteristic for an npn
Transistor.

Figure 5.16 The iC –vBE characteristic for an npn transistor.

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 Temperature Effect on the iC–vBE
Characteristics.

Figure 5.17 Effect of temperature on the iC–vBE characteristic. At a constant emitter

current (broken line), vBE changes by –2 mV/°C.

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