micromachines

Communication
A Comparative Study on the Degradation Behaviors of
Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3
Gate Stacks
Lixiang Chen, Zhiqi Lu, Chaowei Fu, Ziqiang Bi * , Miaoling Que, Jiawei Sun and Yunfei Sun *

School of Electronic and Information Engineering, Suzhou University of Science and Technology,
Suzhou 215009, China
* Correspondence: [email protected] (Z.B.); [email protected] (Y.S.)

Abstract: In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN)
high electron mobility transistor (HEMT) under positive gate bias stress are discussed. Devices with
a gate dielectric that consists of pure Pb(Zr,Ti)O3 (PZT) and a composite PZT/Al2 O3 bilayer are
studied. Two different mechanisms, charge trapping and generation of traps, both contribute to
the degradation. We have observed positive threshold voltage shift in both kinds of devices under
positive gate bias stress. In the devices with a PZT gate oxide, we have found the degradation is
owing to electron trapping in pre-existing oxide traps. However, the degradation is caused by electron
trapping in pre-existing oxide traps and the generation of traps for the devices with a composite
PZT/Al2 O3 gate oxide. Owing to the large difference in dielectric constants between PZT and Al2 O3 ,
the strong electric field in the Al2 O3 interlayer makes PZT/Al2 O3 GaN HEMT easier to degrade.
In addition, the ferroelectricity in PZT enhances the electric field in Al2 O3 interlayer and leads to
more severe degradation. According to this study, it is worth noting that the reliability problem
of the ferroelectric gate GaN HEMT may be more severe than the conventional metal–insulator–
semiconductor HEMT (MIS-HEMT).

Keywords: GaN; MIS-HEMT; ferroelectric; reliability; traps

Citation: Chen, L.; Lu, Z.; Fu, C.; Bi,
Z.; Que, M.; Sun, J.; Sun, Y. A
Comparative Study on the
Degradation Behaviors of
Ferroelectric Gate GaN HEMT with
1. Introduction
PZT and PZT/Al2 O3 Gate Stacks. Gallium nitride(GaN) high electron mobility transistor (HEMT) has been studied
Micromachines 2024, 15, 101. over the last decade in consideration of high power and high frequency electronic ap-
https://doi.org/10.3390/mi15010101 plications [1–9]. Recently, GaN HEMT with ferroelectric insulated gate have attracted a
Academic Editors: Wei Liu and
large number of attentions. Of particular interest is the combination of ferroelectric oxides
Kun Wang
with GaN HEMT due to the strong polarization of GaN-based materials and the switch-
able polar nature of ferroelectrics, leading to the possibility of tunning the polarization
Received: 30 November 2023 in GaN HEMT with ferroelectric oxides. Many studies focus on achieving E-mode GaN
Revised: 26 December 2023 metal–insulator–semiconductor HEMT(MIS-HEMT) by modulating the polarization of
Accepted: 4 January 2024
AlGaN/GaN with ferroelectric material [10–12]. Extensive studies have reported that the
Published: 5 January 2024
growth of ferroelectric oxides on AlGaN/GaN heterostructure could improve the lattice-
mismatch problem, the basic electric characteristics of device after modulation of threshold
voltage by ferroelectric oxides, or the polarization-modulation behavior between the ferro-
Copyright: © 2024 by the authors.
electric gate and AlGaN/GaN [13,14]. Similar as the conventional GaN MIS-HEMT, the
Licensee MDPI, Basel, Switzerland.
presence of the dielectric layer would cause threshold voltage drifts due to trapping at the
This article is an open access article dielectric/III-V interface under positive gate bias stress [15–18]. Especially for ferroelectric
distributed under the terms and gate GaN MIS-HEMT, the ferroelectric oxide layer may lead to different degeneration
conditions of the Creative Commons effects due to the polarization coupling between the ferroelectric oxide and AlGaN/GaN.
Attribution (CC BY) license (https:// However, so far, little attention has been paid on the reliability of the ferroelectric gate
creativecommons.org/licenses/by/ GaN MIS-HEMT under electric stress. The degeneration of electric characteristics under
4.0/).

Micromachines 2024, 15, 101. https://doi.org/10.3390/mi15010101 https://www.mdpi.com/journal/micromachines

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Micromachines 2024, 15, 101 2 of 7

ferroelectric gate GaN MIS-HEMT under electric stress. The degeneration of electric
acteristics under electric stress limits the applied voltage at which the ferroelectri
electric stress limitsHEMT
GaN can be
the applied safely at
voltage operated.
which the ferroelectric gate GaN HEMT can be
safely operated. As Pb(Zr,Ti)O3 (PZT) is a typical ferroelectric for the dielectric layer in ferr
tric/AlGaN/GaN
As Pb(Zr,Ti)O 3 (PZT) is aHEMT,typicalinferroelectric
this paper, we forinvestigate the roles
the dielectric layerofincharge trapping an
ferroelec-
tric/AlGaN/GaN generation
HEMT,during
in this the positive
paper, gate bias stress
we investigate in PZT/AlGaN/GaN
the roles of charge trapping HEMT
and devices
trap generation threshold
during thevoltage, subthreshold,
positive and transconductance
gate bias stress in PZT/AlGaN/GaN are examined before and aft
HEMT devices.
The threshold stress
voltage,test to reveal the different trap effects during the test. As compared,
subthreshold, and transconductance are examined before and afterthe device
anreveal
the stress test to Al2O3 the
interlayer between
different PZT during
trap effects and AlGaN(PZT/Al 2O3/AlGaN/GaN
the test. As compared, HEMT) is al
the device
with an Al2 O3vestigated, which shows
interlayer between PZT aanddifferent degeneration
AlGaN(PZT/Al behavior from that
2 O3 /AlGaN/GaN without
HEMT) is Al2O3
also investigated, which shows a different degeneration behavior from that without Al2 O3 .
2. Device Design and Fabrication
2. Device Design and Fabrication
The structure diagram of the fabricated ferroelectric gate AlGaN/GaN HEMT i
The structure
sented diagram
in Figure of1.the
The fabricated
device was ferroelectric
fabricated on gate AlGaN/GaN
SiC substrate by HEMT is
metal organic che
presented in Figure 1. The device was fabricated on SiC substrate by metal organic
vapor deposition (MOCVD), containing 180 nm AlN nucleation layer, 3-µm GaN b chemical
vapor deposition 1 nm (MOCVD), containing
AlN interlayer, and 20180nmnm AlN
Al0.3 Ga0.7nucleation
N barrier. layer,
Device3-µm GaN buffer,
fabrication started with o
1 nm AlN interlayer, and 20 nm Al Ga N barrier. Device fabrication
contact formation by depositing a Ti/Al/Ni/Au (20/160/55/45 nm)
0.3 0.7 started with ohmic
metal stack annea
contact formation840 by
°C depositing
for 30 s in Na Ti/Al/Ni/Au (20/160/55/45 nm) metal stack annealed
2 ambient, followed by the device isolation using inductively co
at 840 ◦ C for 30 s in N2 ambient, followed by the device isolation using inductively coupled
plasma (ICP). The pressure and N2 flow during the annealing is one atmosphere (101
plasma (ICP). The pressure and N2 flow during the annealing is one atmosphere (101 kPa)
and 2L/min, respectively. The contact resistance of the Ti/Al/Ni/Au metal stack i
and 2 L/min, respectively. The contact resistance of the Ti/Al/Ni/Au metal stack is
Ω·mm measured by 2-probe linear transmission line method (TLM). Then, the su
0.45 Ω·mm measured by 2-probe linear transmission line method (TLM). Then, the surface
passivation was conducted by depositing Si3N4 using plasma-enhanced chemical
passivation was conducted by depositing Si3 N4 using plasma-enhanced chemical vapor
deposition (PECVD). The SiN presented under the gate was removed by dry-etching
deposition (PECVD). The SiN presented under the gate was removed by dry-etching with
ICP. PZT was deposited using a pulsed laser deposition (PLD) system at 500 °C. F
ICP. PZT was deposited using a pulsed laser deposition (PLD) system at 500 ◦ C. For the
device with Al2O3 interlayer as shown in Figure 1b, prior to a 30 nm PZT ferroelectric
device with Al2 O3 interlayer as shown in Figure 1b, prior to a 30 nm PZT ferroelectric layer
deposition, a 2 nm Al2O3 interfacial layer was grown by atomic layer deposition (
deposition, a 2 nm Al2 O3 interfacial layer was grown by atomic layer deposition (ALD) and
and oxidized with◦ O2 plasma at 300 °C for 30 min. Finally, Pt was sputtered using a
oxidized with O2 plasma at 300 C for 30 min. Finally, Pt was sputtered using a magnetron
netron
sputter and lifted sputter
off to defineandthelifted off to define the gate electrodes.
gate electrodes.

Figure 1. Schematic
Figurecross-section
1. Schematicofcross-section
(a) the PZT/AlGaN/GaN HEMT and (b)
of (a) the PZT/AlGaN/GaN the PZT/Al
HEMT and (b)2 Othe
3 / PZT/Al2
GaN/GaN HEMT.
AlGaN/GaN HEMT.

3. Device Performance and Discussion

3. Device Performance and Discussion
The DC measurements were performed using a Keithley 4200 semiconductor ana-
The DC measurements were performed using a Keithley 4200 semiconducto
lyzer. In this paper, we focus on the stability of the threshold voltage (Vth ), the maximum
lyzer. In this paper, we focus on the stability of the threshold voltage (Vth), the maxi
transconductance(gm ), and the subthreshold swing (S.S) of the devices with and with-
transconductance(gm), and the subthreshold swing (S.S) of the devices with and wi
out a Al2 O3 interlayer. To compare the characteristics of the devices before and after the
a Al2O3 interlayer. To compare the characteristics of the devices before and after the
stress test, the transfer characteristics of both kinds of fresh devices (PZT GaN HEMT and
PZT/Al2 O3 GaN test,HEMT)
the transfer
were characteristics of both kinds
measured, as presented of fresh
in Figure devices
2. Drain (PZT was
voltage GaN HEMT
PZT/Al 2O3 GaN HEMT) were measured, as presented in Figure 2. Drain voltage w
applied with 0.1 V to measure the transconductance and subthreshold in the linear region,
which decreases plied
the with 0.1 Voftothe
influence measure the transconductance
drain electric field on the gate.and
Thesubthreshold intwo
peak gm of the the linear re
which decreases the influence of the
types of devices was 7.5 mS/mm and 8.3 mS/mm, respectively. drain electric field on the gate. The peak gm
two types of devices was 7.5 mS/mm and 8.3 mS/mm, respectively.
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Micromachines 2024, 15, x FOR PEER REVIEW 3
Micromachines 2024, 15, 101 3 of 7

Figure 2. Transfer characteristic of (a) the PZT/AlGaN/GaN HEMT and (b) the PZT/A
Figure 2. Transfer
GaN/GaN
Figure 2. Transfer HEMT characteristic
characteristic of VD =the
at (a) V.of (a) the PZT/AlGaN/GaN
0.1PZT/AlGaN/GaN HEMT andHEMT
(b) theand (b) the
PZT/Al 2 O3PZT/Al
/ 2O3/

AlGaN/GaNGaN/GaN
HEMT at VHEMT
D = 0.1atV.VD = 0.1 V.
During the test, positive gate bias stress was applied with 15 V with drain and
During
During thegrounded,
test, theand
positive test,
gate positive
the bias
stress gate
stress
timewas bias stress
) waswas
applied
(tstress with
set applied
15 V10with
from swith 15 Vand
to drain
10,000 with
s. The drain
source and sou
transfer cha
grounded, and grounded,
the and
stress the
time stress
(t )time
was (t
set ) was
from set
10 s from
to 10
10,000 s to
s.
istics of both kinds of devices were measured during the positive stress to moni
stress stress 10,000
The s. The
transfer transfer
charac- charact
istics
teristics of both of both
kinds
evolution kinds
of Vth, of
of devices m devices
gwereandmeasured were stress
S.S with measured
during theduring
time. positive
Figure 3the positive
stress
shows to Istress
themonitor to monitor
the
D-VGS curves of PZ
evolution ofevolution
VthHEMT
, gm and ofand
Vth,PZT/Al
S.S gm and2O
with S.S
stress with HEMT
time.
3 GaN stress time.
Figure 3 showsFiguretypical
in several the 3 shows
I D -V GS the Itimes.
curves
stress D-VGS curves
of PZT GaN of PZT Gv
The threshold
HEMT and HEMT PZT/Aland 2 O3 PZT/Al
as the2Ogate3 GaN HEMT at inID several typical
times.stress
As can betimes. seen,The the threshold volta
GaN HEMT in several typical stress The threshold voltage
is defined voltage = 1 nA/mm. volt
is defined asisthe
defined
gate as the
voltage gate
at I voltage
= 1 at
nA/mm. I = 1
As nA/mm.
can be As
seen, can
the be seen,
threshold the threshold
voltages of voltages
both kinds of devices positively shift with the increase in stress time. For PZT GaN H
D D
both kinds of devices
both kinds positively shift with the increase in stress time. stress
For PZT GaN ForHEMT,
the Vthof devicestend
shifting positively shift
to saturation with
with the increase
stress timeinincreased time.
to 1000 PZT GaNVth
s, while HEM s
the Vth shifting
the Vthtend to saturation
shifting tend to with stress
saturation time
with increased
stress time to 1000
increased s, while
to Vth
1000 shifting
s, while Vth shift
of PZT/Al2O3 GaN HEMT is still obvious when the stress time reaches 10,000 s. T
of PZT/Al2 of O3PZT/Al
GaN HEMT 2O3 GaN
is still
HEMT obvious when the stress
is still whentime reaches 10,000 s. The Vth s. The V
shift during positive gate biasobvious
stress indicates the stress
electron time
trappingreachesin the 10,000
gate stack.
shift duringshift
positive gate bias stress indicates electron trapping in the
during positive gate bias stress indicates electron trapping in the gate stack. gate stack.

Figure
Figure 3. The ID -V 3. The
GS curves of I(a)
D-Vthe
GS curves of (a) the PZT/AlGaN/GaN
PZT/AlGaN/GaN HEMT and (b)HEMT and (b)
the PZT/Al 2 Othe PZT/Al2O3/AlGa
3 /AlGaN/
Figure
GaN HEMT after 3. The
HEMT
positive ID-V
after
gate GS curves
positive
bias stressofwith
gate (a) the
bias PZT/AlGaN/GaN
stress with
different different
stress HEMT
time. stress and (b) the PZT/Al2O3/AlGaN/G
time.
HEMT after positive gate bias stress with different stress time.
However, it is worthHowever, pointingit is worth
out that pointing
the S.S out that the
is almost noS.S is almost
changing forno
thechanging
PZT GaN for the PZ
HEMT as shown However,
HEMT it3a,
as shown
in Figure is which
worth
in Figurepointing
means 3a,no out
whichthat
traps the S.S
means noistraps
generation almost
during no changing
generation
the stress infor
duringPZT the PZT
stressG
GaN HEMT.HEMT for as
AsGaN shown in Figure 3a, which means no traps
HEMT. As for the PZT/Al2O3 GaN HEMT, the S.S degrades when stress time
the PZT/Al 2 O 3 GaN HEMT, the S.S degrades generation
when stress during
time the
increase stress in in
P
GaNtoHEMT.
to 1000 s, indicating As for the PZT/Al O GaN HEMT, the S.S degrades
1000 s, indicating the generation of traps (interface or border) according to the fo
the generation of traps 2 (interface
3 or border) according when
to the stress
formula time incre
to 1000
for the S.S [19]. These
for s, indicating
the generated
S.S [19]. These the
trapsgeneration
cause theoftraps
generated trapscause
positive (interface
shift
the Vorthborder)
ofpositive
when according
the
shift stress
of to the
time
Vth when theform
stre
for the
increase to 1000 s S.S [19].
for
increase the These
PZT/Al
to 1000 generated
O
s 2for GaN traps
HEMT.
3 the PZT/Al 2Ocause
3 GaN the positive shift of Vth when the stress ti
HEMT.
Figure increase
4 presents to the
1000transconductance
Figure 4s presents
for the PZT/Al 2O 3 GaNextracted
curves
the transconductance HEMT. curves from extracted
Figure 2. It is easy
from to 2. It is
Figure
see that the gm see Figure
drops 4the
presents
thatslightly gm fordrops theslightly
the transconductance
PZT GaN forHEMT
the PZT curves
while
GaN theextracted from
gm decreases
HEMT while theFigure
obviously 2. It is easy
gm decreases obv
see when
when the stress that
timethe g
reaches drops 1000 slightly
s for for
the the
PZT/Al PZT GaN
O HEMT
GaN HEMT.
the stress time reaches 1000 s for the PZT/Al2O3 GaN HEMT. The obvious
m 2 3 while
Thethe g
obvious
m decreases
drop obvioud
of gm during when the stress
the stress time reaches
suggests that the 1000generateds for the
trapsPZT/Al
have2a Osignificant
3 GaN HEMT. The obvious
influence on drop
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Micromachines 2024, 15, 101 4 of 7

gm during the stress suggests that the generated traps have a significant influence
mobility of the PZT/Al2O3 GaN HEMT. The charge-trapping process mainly occu
the mobility of the PZT/Al2 O3 GaN HEMT. The charge-trapping process mainly occurs
the oxide/AlGaN interface which is close to the channel because of its influence on c
near the oxide/AlGaN interface which is close to the channel because of its influence on
mobility.
channel mobility.

Figure 4. Transconductance
Figure 4. Transconductance curves of (a) the PZT/AlGaN/GaN
curves of (a) the PZT/AlGaN/GaN HEMT and (b) theHEMT and 2(b)
PZT/Al O3 /the PZT/A
AlGaN/GaN HEMT GaN/GaN HEMTgate
after positive afterbias
positive
stressgate
withbias stressstress
different with different
time. stress time.

In order
In order to identify to identify
the different the different
trends of Vth , S.S, trends
and gof mV th, both
for S.S, and
kindsgmoffor both kinds of
devices
during the stressduring
applied,theFigure
stress 5applied,
summarizes Figurethe 5 summarizes
evolution of the Vth ,evolution
S.S, and gof Vth, S.S,
m over the and gm o
stress time. Forstress
the PZTtime. For the PZT GaN HEMT, the Vth increases linearly with stress time
GaN HEMT, the Vth increases linearly with stress time before
600s, and very
600 s, and then increases then increases
slightly with verystress
slightly
time,withasstress
can betime,seenasincan be seen
Figure 5a. in
TheFigure 5a.
is almost stable at around 80~85 mV/dec during the stress test as shown
S.S is almost stable at around 80~85 mV/dec during the stress test as shown in Figure 5c. in Figur
In Figure 5e, theFigure
gm drops5e, slightly
the gm drops slightly
with stress time with stress time
increases, increases,
indicating that indicating
the electronthat the e
trapping just hastrapping just hason
a slight impact a slight impactof
the mobility onthethedevice.
mobility of the
Since gm device. Since gmand
drops slightly drops sligh
no S.S degeneration during the stress test, it can be concluded that the Visth positive
no S.S degeneration during the stress test, it can be concluded that the V th positive shift
mainly due to the mainly duetrapping
electron to the electron trapping
in the oxide in the
for the PZT oxide
GaNfor the PZT
HEMT. GaN HEMT.
Besides, due to Besides
there is no generated traps during the stress test,
there is no generated traps during the th the V shift tends to saturation when the
stress test, the Vth shift tends to saturation w
stress time increases after 600 s. For the PZT/Al
stress time increases after 600 s. 2For O GaN HEMT,
3 the PZT/Al2O3 GaN the V increases with
th HEMT, the Vth increas
stress time evenstress
in long-term
time even stress region as shown
in long-term in Figure
stress region 5b, which
as shown is different
in Figure fromis differe
5b, which
the PZT GaN HEMT. the PZT When
GaNthe stress When
HEMT. time isthelessstress
than time
500 s,isthe
lessS.Sthanand500gms,are
thestabilized
S.S and gm are sta
at about 80 mV/dec and 8.3 mS/mm, respectively. The S.S starts
at about 80 mV/dec and 8.3 mS/mm, respectively. The S.S starts to to increase, and gmincrease,
starts and g
to drop when stress time is above 500 s. This suggests that new trap generation
to drop when stress time is above 500 s. This suggests that new trap generation takes place tak
for the PZT/Al2 O3 GaN HEMT when stress time is greater than a certain level. According
for the PZT/Al2O3 GaN HEMT when stress time is greater than a certain level. Ac
to the discussion above, we find that the PZT/Al2 O3 GaN HEMT is easier to degradation
to the discussion above, we find that the PZT/Al2O3 GaN HEMT is easier to degr
under positive gate bias stress than the PZT GaN HEMT.
under positive gate bias stress than the PZT GaN HEMT.
To clarify the reason for the new trap generation of the PZT/Al2 O3 GaN HEMT in
our stress test, we simulated the electrical field distribution under the gate of both kinds of
devices with VG = 15 V by Silvaco Technology Computer Aided Design (TCAD). In our
simulation, the dielectric constant of PZT and Al2 O3 was set to 500 and 9, respectively.
As shown in Figure 6, the electrical field under the gate stacks mainly concentrate on
Al2 O3 interlayer for the PZT/Al2 O3 GaN HEMT, which is owing to the large difference
in dielectric constants between PZT and Al2 O3 . The strong electric field in the Al2 O3
interlayer leads to the generation of new traps during the stress test, which degrades the
S.S and gm of devices. For the PZT GaN HEMT, the electric field in the gate oxide layer is
relatively weak and therefore not so easy to degrade.
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Micromachines 2024, 15, 101 5 of 7

Figure 5. Stress time evolution of Vth, S.S, and gm of (a,c,e) the PZT/AlGaN/GaN HEMT and (b
the PZT/Al2O3/AlGaN/GaN HEMT.

To clarify the reason for the new trap generation of the PZT/Al2O3 GaN HEMT in
stress test, we simulated the electrical field distribution under the gate of both kind
devices with VG = 15 V by Silvaco Technology Computer Aided Design (TCAD). In
simulation, the dielectric constant of PZT and Al2O3 was set to 500 and 9, respectively
shown in Figure 6, the electrical field under the gate stacks mainly concentrate on A
interlayer for the PZT/Al2O3 GaN HEMT, which is owing to the large difference in di
tric constants between PZT and Al2O3. The strong electric field in the Al2O3 interlayer l
to the generation of new traps during the stress test, which degrades the S.S and g
devices.
Figure 5. Stress For the PZT
time evolution GaN
of Vth, HEMT,
S.S, and gmtheofelectric field
(a,c,e) the in the gate oxideHEMT
PZT/AlGaN/GaN layer isand
relatively w
and
Figure 5. Stress time
(b,d,f) the PZT/Al therefore not so easy to degrade.
2 3evolution of Vth, S.S, and gm of (a,c,e) the PZT/AlGaN/GaN HEMT and (b,d,f)
O /AlGaN/GaN HEMT.
the PZT/Al2O3/AlGaN/GaN HEMT.

To clarify the reason for the new trap generation of the PZT/Al2O3 GaN HEMT in our
stress test, we simulated the electrical field distribution under the gate of both kinds of
devices with VG = 15 V by Silvaco Technology Computer Aided Design (TCAD). In our
simulation, the dielectric constant of PZT and Al2O3 was set to 500 and 9, respectively. As
shown in Figure 6, the electrical field under the gate stacks mainly concentrate on Al2O3
interlayer for the PZT/Al2O3 GaN HEMT, which is owing to the large difference in dielec-
tric constants between PZT and Al2O3. The strong electric field in the Al2O3 interlayer leads
to the generation of new traps during the stress test, which degrades the S.S and gm of
devices. For the PZT GaN HEMT, the electric field in the gate oxide layer is relatively weak
and therefore not so easy to degrade.

Figure 6. Electric field simulation of (a) the PZT/AlGaN/GaN HEMT and (b) the PZT/Al2 O3 /
Figure 6. Electric field simulation of (a) the PZT/AlGaN/GaN HEMT and (b) the PZT/Al2O
AlGaN/GaN HEMTGaN/GaN at VHEMT
G = 15 V.
at VG = 15 V.

Figure 7 presents the band diagram to illustrate the underlying reason for the trapping
Figure 7 presents the band diagram to illustrate the underlying reason for the t
behavior of both kinds of devices during the positive gate stress test. The direction of
ping behavior of both kinds of devices during the positive gate stress test. The direc
polarization in PZT is toward to substrate due to the applied gate voltage is positive. For
of polarization in PZT is toward to substrate due to the applied gate voltage is posi
the PZT GaN HEMT, there are some trap states at the PZT/AlGaN interface (interface
states) or in the PZT close to the interface (border traps) due to the lattice mismatch between
PZT and AlGaN [13]. Therefore, as shown in Figure 7a, the electrons from AlGaN/GaN
channel are trapped at the PZT/AlGaN interface with the positive gate voltage, which
leads to the Vth positive shift as mentioned above. When the trap states below the fermi
level are all filled, the Vth shifting approaches saturation.
There are two stages of electrons trapping for the PZT/Al2 O3 GaN HEMT. At the
Figure
first 6. Electric
stage, similarfield simulation
as the PZT GaN of (a) the PZT/AlGaN/GaN
HEMT, electrons trappedHEMT and
at Al2 O(b) the PZT/Al
3 /AlGaN 2O3/Al-
interface
GaN/GaN
or in Al2 OHEMT at VG =with
3 interlayer 15 V. the positive gate voltage, causing the positive Vth shift. At
the second stage, as shown in Figure 7b, electrons tunnel through the Al2 O3 interlayer
Figure
and enter the7PZT.
presents
Owingthetoband diagram to band
the conduction illustrate the underlying
difference between Al reason for PZT,
2 O3 and the trap-
the
ping behavior
tunneling of both
electrons kinds
start of devices
to lose energy during
in PZT the
andpositive
the lost gate stress
energy fromtest. Theelectrons
these direction
of polarization
could be used toingenerate
PZT is toward
traps attoAlsubstrate duethe
2 O3 or near to the applied
PZT/Al 2 O3 gate voltage
interface. is positive.
Moreover, a
strong electric field in Al2 O3 makes a large conduction band bending, which leads to the
 Micromachines 2024, 15, 101 6 of 7

Micromachines 2024, 15, x FOR PEER REVIEW 6 of 8

tunnel electrons losing more energy and cause more severe generation of traps. These new
trap states may be filled by electrons from the channel, which not only leads to the Vth
positive shift continually but also causes the S.S and gm degradation with the increase in
Forstress
the PZT
time.GaN HEMT,the
In addition, there are some trap
ferroelectricity states
in PZT at the
could alsoPZT/AlGaN interface
enhance the electric (interface
field in
states) or2 in3 the PZT close to the interface (border traps) due to the lattice mismatch be-
the Al O interlayer (indicated by the arrow in Figure 7b) compared with the case that
gate stacks are non-ferroelectric [19]. Such a high electric field would cause more severe
tween PZT and AlGaN [13]. Therefore, as shown in Figure 7a, the electrons from Al-
degradation of the devices compared with the conventional MIS-HEMT. It is also worth
GaN/GaN channel are trapped at the PZT/AlGaN interface with the positive gate voltage,
pointing that some research shows utilizing oxides as interlayer can mitigate the lattice
which leads between
mismatch to the VthPZT
positive shift asbut
and AlGaN, mentioned above.
it also makes theWhen
devicethe trap
more states below
susceptible to the
fermi level are all filled, the V th shifting approaches saturation.
degradation. Furthermore, the ferroelectricity in PZT makes the degradation more severe.

Figure 7. 7.Band
Figure diagrams
Band diagramsunder
under the gate ofof(a)(a)thethe
the gate PZT/AlGaN/GaN
PZT/AlGaN/GaN HEMT
HEMT and and (b) the
(b) the
PZT/Al 2O3/AlGaN/GaN HEMT at VG = 15V.
PZT/Al O /AlGaN/GaN HEMT at V = 15V.
2 3 G

4. There are two stages of electrons trapping for the PZT/Al2O3 GaN HEMT. At the first
Conclusions
stage, similar as the this
In conclusion, PZTpaper
GaNstudied
HEMT, theelectrons
positive gatetrapped at Alof
bias stress 2Othe
3/AlGaN interface
ferroelectric gate or in
Al2O3 interlayer with the positive gate
GaN HEMT with PZT and PZT/Al 2 3 voltage, causing the positive Vth shift. At the of
O as gate dielectric. The degradation mechanisms second
the PZT GaN HEMT and the PZT/Al2 O3 GaN HEMT are compared. For the PZT GaN
stage, as shown in Figure 7b, electrons tunnel through the Al2O3 interlayer and enter the
HEMT, a positive Vth shift is caused by the electron trapping in pre-exiting oxide trap in
PZT. Owing to the conduction band difference between Al2O3 and PZT, the tunneling elec-
the early stage, then the Vth tends to saturation with stress time increase. The S.S and gm
trons start to
degrade lose energy
slightly with stressin PZT and
time. Forthethelost energy
PZT/Al from these electrons could be used to
2 O3 GaN HEMT, the Vth positive shift
generate traps at Al 2 O 3 or near the PZT/Al 2 O
is due to the electron trapping in pre-exiting oxide trap and3 interface. Moreover, a strong
the generation electric
of the new field
in Al 2O3 makes
traps. a large traps
The generated conduction band
cause the bending,
obvious which leads
degradation of theto S.Sthe
andtunnel electrons
gm. Owing to los-
ingthe
more
largeenergy andin
difference cause more severe
the dielectric generation
constants betweenofPZT traps.
andThese
Al2 O3new trap states
, the strong may be
electric
filled byinelectrons
field the Al2 Ofrom the channel,
3 interlayer which
makes the PZT/Alnot only leadsHEMT
2 O3 GaN to theeasier
Vth positive shift In
to degrade. contin-
ually but also
addition, the causes the S.Sin
ferroelectricity and
PZTgmenhances
degradation withfield
the electric the in
increase in stress and
Al2 O3 interlayer time. In addi-
leads
to the
tion, moreferroelectricity
severe degradation. in PZTTherefore,
could alsoit is worth
enhance noting
the that the reliability
electric field in the problem
Al2O3ofinterlayer
the
ferroelectric gate GaN HEMT may be more severe than the conventional GaN MIS-HEMT.
(indicated by the arrow in Figure 7b) compared with the case that gate stacks are non-
Using the ferroelectric oxide with a relatively small dielectric constant in gate stacks may
ferroelectric
mitigate the[19]. Such a high
degradation in theelectric field would cause more severe degradation of the
real applications.
devices compared with the conventional MIS-HEMT. It is also worth pointing that some
research shows utilizing
Author Contributions: oxides as interlayer
Conceptualization, L.C. and Z.B.; can mitigate the
methodology, Z.L.;lattice
software,mismatch between
C.F.; validation,
PZT and
L.C., AlGaN,
M.Q. but
and J.S.; it also
formal makes
analysis, theinvestigation,
Y.S.; device more susceptible
Z.L.; to degradation.
resources, C.F.; Further-
data curation, L.C.;
more, the ferroelectricity in PZT makes the degradation more severe.
writing—original draft preparation, L.C.; writing—review and editing, Y.S.; visualization, M.Q.;
supervision, Y.S.; project administration, Z.B.; funding acquisition, L.C., J.S. and Y.S. All authors have
read and agreed to the published version of the manuscript.
4. Conclusions
Funding: This work was supported by the National Natural Science Foundation of China (Grant
In conclusion,
No.62104167, thisand
62101374) paper studied
Jiangsu Natural the positive
Science gate(Grant
Foundation bias stress of the ferroelectric
No. BK20210863, BK20210861, gate
GaN HEMT with PZT and PZT/Al2O3 as gate dielectric. The degradation mechanisms of
BK20221385).
theData
PZTAvailability
GaN HEMT and the PZT/Al2O3 GaN HEMT are compared. For the PZT GaN
Statement: Data are contained within the article.
HEMT, a positive Vth shift is caused by the electron trapping in pre-exiting oxide trap in
the early stage, then the Vth tends to saturation with stress time increase. The S.S and gm
degrade slightly with stress time. For the PZT/Al2O3 GaN HEMT, the Vth positive shift is
due to the electron trapping in pre-exiting oxide trap and the generation of the new traps.
The generated traps cause the obvious degradation of the S.S and gm. Owing to the large
Micromachines 2024, 15, 101 7 of 7

Conflicts of Interest: The authors declare no conflicts of interest.

References
1. Mishra, U.K.; Shen, L.; Kazior, T.E.; Wu, Y.F. GaN-based RF power devices and amplifiers. Proc. IEEE 2008, 96, 287–305. [CrossRef]
2. Mishra, U.K.; Parikh, P.; Wu, Y.F. AlGaN/GaN HEMTs—An overview of device operation and applications. IEEE Electron Device
Lett. 2012, 90, 1022–1031. [CrossRef]
3. Saito, W.; Takada, Y.; Kuraguchi, M.; Tsuda, K.; Omura, I. Recessed-gate structure approach toward normally off high-voltage
AlGaN/GaN HEMT for power electronics applications. IEEE Trans. Electron Devices 2006, 53, 356–362. [CrossRef]
4. Pengelly, R.S.; Wood, S.M.; Milligan, J.W.; Sheppard, S.T.; Pribble, W.L. A review of GaN on SiC high electron-mobility power
transistors and MMICs. IEEE Trans. Microw. Theory Tech. 2012, 60, 1764–1783. [CrossRef]
5. Hao, Y.; Yang, L.; Ma, X.; Ma, J.; Cao, M.; Pan, C.; Wang, C.; Zhang, J. High-Performance Microwave Gate-Recessed Al-
GaN/AlN/GaN MOS-HEMT with 73% Power-Added Efficiency. IEEE Electron Device Lett. 2011, 32, 626–628. [CrossRef]
6. Yu, Q.; Shi, C.; Yang, L.; Lu, H.; Zhang, M.; Wu, M.; Hou, B.; Jia, F.; Guo, F.; Ma, X.; et al. High Current and Linearity
AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application. IEEE Electron
Device Lett. 2023, 44, 582–585. [CrossRef]
7. Zhang, M.; Ma, X.-H.; Yang, L.; Mi, M.; Hou, B.; He, Y.; Wu, S.; Lu, Y.; Zhang, H.-S.; Zhu, Q.; et al. Influence of Fin Configuration
on the Characteristics of AlGaN/GaN Fin-HEMTs. IEEE Trans. Electron Devices 2018, 65, 1745–1752. [CrossRef]
8. Chen, K.J.; Häberlen, O.; Lidow, A.; Tsai, C.L.; Ueda, T.; Uemoto, Y.; Wu, Y.-F. GaN-on-Si Power Technology: Devices and
Applications. IEEE Trans. Electron Devices 2017, 64, 779–795. [CrossRef]
9. Zhang, M.; Chen, Y.; Guo, S.; Lu, H.; Zhu, Q.; Mi, M.; Wu, M.; Hou, B.; Yang, L.; Ma, X.; et al. Influence of Gate Geometry on the
Characteristics of AlGaN/GaN Nanochannel HEMTs for HighLinearity Applications. Micromachines 2023, 14, 1513. [CrossRef]
[PubMed]
10. Hao, L.Z.; Zhu, J.; Liu, Y.J.; Liao, X.W.; Wang, S.L.; Zhou, J.J.; Kong, C.; Zeng, H.Z.; Zhang, Y.; Zhang, W.L.; et al. Normally-off
characteristics of LiNbO3/AlGaN/GaN ferroelectric field-effect transistor. Thin Solid Film. 2012, 520, 6313–6317. [CrossRef]
11. Lee, C.-T.; Yang, C.-L.; Tseng, C.-Y.; Chang, J.-H.; Horng, R.-H. GaN-Based Enhancement-Mode Metal-Oxide-Semiconductor High
Electron Mobility Transistors Using LiNbO3 Ferroelectric Insulator on Gate-Recessed Structure. IEEE Trans. Electron. Devices 2015,
62, 2481–2487. [CrossRef]
12. Chen, L.; Ma, X.; Zhu, J.; Hou, B.; Song, F.; Zhu, Q.; Zhang, M.; Yang, L.; Hao, Y. Polarization Engineering in PZT/AlGaN/GaN
High-Electron-Mobility Transistors. IEEE Trans. Electron Devices 2018, 65, 3149–3155. [CrossRef]
13. Li, L.; Liao, Z.; Gauquelin, N.; Nguyen, M.; Hueting, R.; Gravesteijn, D.; Lobato, I.; Houwman, E.; Lazar, S.; Verbeeck, J.; et al.
Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52 Ti0.48 O3 on GaN/AlGaN/Si(111) Substrate. Adv. Mater.
Interfaces 2018, 5, 1700921. [CrossRef]
14. Stolichnov, I.; Malin, L.; Muralt, P.; Setter, N. Ferroelectric Gate for control of transport properties of two-dimensional electron gas
at AlGaN/GaN heterostructures. Appl. Phys. Lett. 2006, 88, 043512. [CrossRef]
15. Zhang, K.; Wu, M.; Lei, X.; Chen, W.; Zheng, X.; Ma, X.; Hao, Y. Observation of threshold voltage instabilities in AlGaN/GaN MIS
HEMTs. Semicond. Sci. Technol. 2014, 29, 075019. [CrossRef]
16. Lagger, P.; Ostermaier, C.; Pobegen, G.; Pogany, D. Towards understanding the origin of threshold voltage instability of
AlGaN/GaN MIS-HEMTs. In Proceedings of the 2012 International Electron Devices Meeting, San Francisco, CA, USA, 10–13
December 2012; pp. 13.1.1–13.1.4. [CrossRef]
17. Liu, S.-C.; Chen, B.-Y.; Lin, Y.-C.; Hsieh, T.-E.; Wang, H.-C.; Chang, E.Y. GaN MIS-HEMTs With Nitrogen Passivation for Power
Device Applications. IEEE Electron Device Lett. 2014, 35, 1001–1003. [CrossRef]
18. Lu, B.; Matioli, E.; Palacios, T. Tri-Gate Normally-Off GaN Power MISFET. IEEE Electron Device Lett. 2012, 33, 360–362. [CrossRef]
19. Müller, J.; Polakowski, P.; Müller, S.; Mulaosmanovic, H.; Ocker, J.; Mikolajick, T.; Slesazeck, S.; Müller, S.; Ocker, J.; Mikolajick,
T.; et al. High endurance strategies for hafnium oxide based ferroelectric field effect transistor. In Proceedings of the 2016 16th
Non-Volatile Memory Technology Symposium (NVMTS), Pittsburgh, PA, USA, 17–19 October 2016; pp. 1–7. [CrossRef]

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