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Edc Imp Questions - r20

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14 views2 pages

Edc Imp Questions - r20

Uploaded by

vickysmusiceditz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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ELECTRONIC DEVICES AND CIRCUITS (20A04101T)

UNIT WISE IMPORTANT TOPICS

UNIT- I Review of Semiconductors (Part – A)

1. Intrinsic and Doped Semiconductors – Explanation with neat


Diagrams - 10M
2. Intrinsic and Doped Semiconductors – Comparison. - 10M / 5M
3. Comparison between P-type & N-type Semiconductors - 10M / 5M
4. (a) PN Junction with Open & Applied Voltage Circuits - 5M
(b) Capacitive Effects in PN Junction - 5M

Diodes (Part – B)

5. Ideal Diode and its Voltage Current Characteristics - 10M / 5M


6. Terminal Characteristics of Junction Diode/Voltage Current
Characteristics/V-I Characteristics in Forward Bias & Reverse Bias
with neat diagrams - 10M
7. (a) Break Down Regions in diodes - 5M
(b) Modeling the Diode Forward Characteristics - 5M

UNIT- II Zener Diode & Special Purpose Diodes (Part – A)

1. Zener diode characteristics and as a Voltage Shunt Regulator - 5M


2. Half Wave, Full Wave & Bridge Rectifier Circuits – Explanation with
neat diagrams. (Any ONE will be asked) -10M
3. CLC Filter With HWR / FWR / Bridge Rectifier - 10M / 5M
4. Clipping and Clamping circuits - 10M / 5M
5. Special Purpose Diodes (Any ONE or TWO will be asked) - 5M
(a) UJT (b) LED (c) Photo diode
(d) Varactor Diode (e) Schottky Barrier Diode

Bipolar Junction Transistor – BJT (Part – B)

6. Common Emitter (CE) & Common Base (CB) Configurations – Input


& Output Characteristics with neat Diagrams - 10M
7. Comparison between CE,CB & CC configurations - 10M / 5M
8. (a) Dependence of Collector Current on Collector Voltage- 5M
(b) Early Effect - 5M
9. Physical Structure & Operating Modes of PNP & NPN Transistors- 5M
UNIT- III
1. Common Emitter(CE) Amplifier with and without Emitter Resistance -
Explanation with neat Diagrams - 10M
2. Common Base(CB) & Common Collector / Emitter Follower (CC)
Amplifiers - Explanation with neat Diagrams - 10M
3. Biasing in BJT Amplifier Circuits – Fixed Bias, Self Bias & Voltage
divider bias circuits (Any ONE or TWO will be asked) - 10M / 5M
4. (a) Small Signal Analysis & design of CE Amplifier- 5M
(b) Transistor Breakdown & Temperature Effects in BJT- 5M
5. Comparison between CE,CB & CC Amplifiers - 10M / 5M
6. (a) Voltage Transfer Characteristics(VTC) & its determination by
Graphical Analysis- 5M
(b)Voltage Amplifier & Small signal Voltage Gain - 5M

UNIT- IV MOS Field Effect Transistors (MOSFETs)

1. Characteristics of N-channel MOSFET (V- I / ID-VDS/ ID-VGS


characteristics) - 10M
2. Characteristics of P-channel MOSFET (V- I / ID-VDS/ ID-VGS
characteristics) - 10M
3. (a) Comparison between BJT & FET - 5M
(b) Physical Device Structure of MOSFET & its Operation- 5M
4. Complementary MOSFET (CMOS) - 5M
5. (a) Applying the MOSFET in Amplifier Design - 5M
(b) Q – Point - 5M

UNIT- V MOSFET Small Signal Operation Models

1. Common Source(CS) Amplifier with and without source Resistance -


Explanation with neat Diagrams - 10M
2. Common Gate (CG) & Common Drain / Source Follower (CD)
Amplifiers - Explanation with neat Diagrams - 10M / 5M
3. Biasing in MOSFET Amplifier Circuits – Fixing with & without source
resistance, drain to gate feedback resistor and using constant current
source (Any ONE or TWO will be asked) - 10M / 5M
4. Small Signal Analysis and Design of Common Source (CS) Amplifier-
10M / 5M
5. (a) T-equivalent circuit model- 5M (b) Body Effect - 5M
(c) Small signal equivalent circuit models- 5M (d) DC Bias- 5M
(e) Separating the DC Analysis and the Signal Analysis- 5M

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