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Problem Set#3

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18 views3 pages

Problem Set#3

Uploaded by

Sultan Qahtani
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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King Saud University

College of Engineering
Electrical Engineering Department
EE408 – VLSI Technology & Fabrication

Problem Set #3
1) Calculate the Dt product for an Arsenic diffusion in Si performed at:
a) 900oC for 10 min.
b) 1200oC for 2 hours.

2) A phosphorous diffusion has a surface concentration of 5×1018/cm3 and the background


concentration of the p-type wafer is 1×1015/cm3. The Dt product for the diffusion is 10-8 cm2.
a) Find the junction depth for a Gaussian profile distribution.
b) Find the junction depth for an erfc profile distribution.
c) Draw a graph of the two profiles.
d) What is the sheet resistance of the two diffusions?

3) A 5-hr boron diffusion is to be made at 1100oC. What thickness of silicon dioxide is required to
mask this diffusion?

4) A 5-hr phosphorous diffusion is to be made at 1100oC. What thickness of silicon dioxide is


required to mask this diffusion?

5) The channel length of an NMOS transistor is the spacing between the source and drain diffusions
as shown in the figure below. The spacing between the source and drain diffusion openings is 3
µm on the masking oxide that was used to make the transistor. The source/drain regions are
diffused to a depth of 0.5 µm using a constant-source diffusion. The surface concentration is
1×1020/cm3 and the wafer concentration is 1×1017/cm3. What is the channel length in the actual
device after completing the diffusion process?
6) A boron diffusion into a 1 Ω∙cm n-type wafer results in a Gaussian profile with a surface
concentration of 5×1018/cm3 and a junction depth of 4 µm. How long did the diffusion take if the
diffusion temperature was 1100 oC. What was the sheet resistance of the diffused layer?

7) Consider the figure below.


a) What is the total number of squares in the resistor shown below?
b) The resistor is actually formed from a p-type base diffusion with a 6 µm junction depth. What
is the actual number of squares in this resistor, assuming that the lateral diffusion under the edge
of the mask is 5 µm?
c) What would be the resistance of the resistors in part (a) and part (b) if the surface concentration
of the base diffusion was 5×1018 boron atoms/cm3, the bulk concentration is 1015/cm3, and the
junction depth is 6 µm?

8) A current of 12 µA is injected into two terminals of a van der Pauw structure having a sheet
resistance of 200 Ω/sq. What is the expected voltage that would be measured at the second set of
terminals?

9) The p-well in a CMOS process is to be formed by a two-step boron diffusion into a 5 Ω∙cm n-
type silicon substrate. The sheet resistance of the well is 1000 Ω/sq. and the junction depth is
7.5µm.
a) Design a diffusion schedule (determine time and temperature) for the drive-in step that produces
the p-well.
b) What is the final surface concentration of the p-well?
c) What is the dose required to form the well?
d) Can this dose be achieved using a solid solubility limited diffusion with temperatures of 900oC
or above? Explain.

10) Boron is implanted with an energy of 60 keV through a 0.25µm layer if silicon dioxide. The
implanted dose is 5×1014/cm2.
a) Find the boron concentration at the Si-SiO2 interface.
b) Find the dose in silicon.
c) Find the junction depth given the background concentration is 3×1015/cm3.
11) An implantation will be used for the predeposition step for a boron base diffusion. The final
layer is to be 5µm deep with a sheet resistance of 125 ohms per square. The background
concentration of the n-type wafer is 1016/cm3.
a) What is the dose required from the ion implanter if the boron will be implanted through a thin
silicon dioxide layer so that the peak of implanted distribution is at the Si-SiO2 interface.
b) What drive-in time is required to produce the final base layer at a temperature of 1100 oC.

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