2SA1952 / 2SA1906 / 2SA2006

Transistors

High-speed Switching Transistor (−60V, −5A)

2SA1952 / 2SA1906 / 2SA2006

!Features !External dimensions (Units : mm)

1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A)
2SA1952
2) Low VCE(sat). (Typ. −0.2V at IC / IB = −3 / −0.15A)

0.75
1.5
3) Wide SOA. (safe operating area)
5.5

0.9
(3) (2) (1)

2.3
4) Complements the 2SC5103 / 2SC5525.

5.1
6.5
0.9

0.65
2.3
C0.5

0.8Min. (1) Base(Gate)

0.5
1.0

2.3
1.5

0.5
2.5 (2) Collector(Drain)
!Absolute maximum ratings (Ta = 25°C) ROHM : CPT3 9.5 (3) Emitter(Source)
EIAJ : SC-63
Parameter Symbol Limits Unit
Collector-base voltage VCBO −100 V
Collector-emitter voltage VCEO −60 V
Emitter-base voltage VEBO −5 V
−5 A
2SA1906
Collector current IC
−10 A(Pulse) 13.1
1 W 3.2
2SA1952
10 W(Tc=25°C)
Collector
(3) (2) (1)

1.5 W
2.54

10.1
5.08

power 2SA1906 PC
25 W(Tc=25°C)
dissipation
2 W
1.24
0.78

2SA2006
25 W(Tc=25°C)
8.8
Junction temperature Tj 150 °C
−55 ∼ +150 °C (1) Base

1.3
Tstg
0.4

Storage temperature
1.3

4.5
(2) Collector
(3) Emitter
0to0.3

0.5Min.

ROHM : PSD3
EIAJ : SC-83A
!Packaging specifications and hFE
Type 2SA1952 2SA1906 2SA2006
Package CPT3 PSD3 TO-220FN 2SA2006 10.0 4.5
hFE Q DEF EF φ 3.2 2.8
Code TL TL −
Basic ordering unit (pieces) 2500 1000 500
15.0
12.0
8.0

1.2
5.0

1.3
14.0

0.8

2.54 2.54 0.75 2.6 (1) Base(Gate)

(1) (2) (3)
(2) Collector(Drain)
(1) (2) (3) (3) Emitter(Source)

ROHM : TO-220FN

!Electrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −100 − − V IC = −50µA
Collector-emitter breakdown voltage BVCEO −60 − − V IC = −1mA
Emitter-base breakdown voltage BVEBO −5 − − V IE = −50µA
Collector cutoff current ICBO − − −10 µA VCB = −100V
Emitter cutoff current IEBO − − −10 µA VEB = −5V
− − −0.3 V IC/IB = −3A/−0.15A
Collector-emitter saturation voltage VCE(sat)
− − −0.5 V IC/IB = −4A/−0.2A
− − −1.2 V IC/IB = −3A/−0.15A
Base-emitter saturation voltage VBE(sat)
− − −1.5 V IC/IB = −4A/−0.2A
2SA1952 120 − 270 −
DC current 2SA1906 hFE 60 − 320 − VCE = −2V , IC = −1A
transfer ratio
2SA2006 100 − 320 −
Transition frequency fT − 80 − MHz VCE = −10V , IE = 0.5A , f = 30MHz
Output capacitance Cob − 130 − pF VCB = −10V , IE = 0A , f = 1MHz
Turn-on time ton − − 0.3 µs IC = −3A , RL = 10Ω
Storage time tstg − − 1.5 µs IB1 = −IB2 = −0.15A
Fall time tf − − 0.3 µs VCC −30V