Field Effect Transistor

Field Effect Transistor
FETs vs. BJTs

Similarities:
• Amplifiers
• Switching devices
• Impedance matching circuits
Differences:
• FETs are voltage controlled devices. BJTs are current controlled
devices.
• FETs have a higher input impedance. BJTs have higher gains.
• FETs are less sensitive to temperature variations and are more easily
integrated on ICs.
• FETs are generally more static sensitive than BJTs.
5
FET Types
•JFET: Junction FET
•MOSFET: Metal–Oxide–Semiconductor FET
▪D-MOSFET: Depletion MOSFET

▪E-MOSFET: Enhancement MOSFET
6
JFET Construction
There are two types of JFETs
•n-channel
•p-channel
The n-channel is more widely used.
There are three terminals:
•Drain (D) and Source (S) are connected to the n-channel

•Gate (G) is connected to the p-type material
7
JFET Operation: The Basic Idea
JFET operation can be compared to a water spigot.
The source of water pressure is the

accumulation of electrons at the
negative pole of the drain-source
voltage.
The drain of water is the electron

deficiency (or holes) at the positive
pole of the applied voltage.
The control of flow of water is the

gate voltage that controls the width
of the n-channel and, therefore, the
flow of charges from source to
drain.
9
JFET Operating Characteristics
There are three basic operating conditions for a JFET:
• VGS = 0, VDS increasing to some positive value

• VGS < 0, VDS at some positive value
• Voltage-controlled resistor
10
JFET Operating Characteristics: VGS = 0 V
Three things happen when VGS = 0 and VDS is increased from 0 to a more positive
voltage
• The depletion region between p-gate
and n-channel increases as electrons
from n-channel combine with holes
from p-gate.
• Increasing the depletion region,

decreases the size of the n-channel
which increases the resistance of the
n-channel.
• Even though the n-channel resistance

is increasing, the current (ID) from
source to drain through the n-
channel is increasing. This is because
VDS is increasing.
11
JFET Operating Characteristics: Pinch Off
If VGS = 0 and VDS is further increased to

a more positive voltage, then the
depletion zone gets so large that it
pinches off the n-channel.
This suggests that the current in the n-

channel (ID) would drop to 0A, but it does
just the opposite–as VDS increases, so does
ID.
12
JFET Operating Characteristics: Saturation
At the pinch-off point:
• Any further increase in VGS does not

produce any increase in ID. VGS at
pinch-off is denoted as Vp.
• ID is at saturation or maximum. It is
referred to as IDSS.
• The ohmic value of the channel is

maximum.
13
As VGS becomes more negative, the

depletion region increases.
14
As VGS becomes more negative:
• The JFET experiences

pinch-off at a lower voltage
(VP).
• ID decreases (ID < IDSS) even

though VDS is increased.
• Eventually ID reaches 0 A.
VGS at this point is called Vp
or VGS(off)..
Also note that at high levels of VDS the JFET reaches a breakdown situation. ID
increases uncontrollably if VDS > VDSmax.
15
JFET Operating Characteristics:
Voltage-Controlled Resistor
The region to the left of the
pinch-off point is called the
ohmic region.
The JFET can be used as a

variable resistor, where VGS
controls the drain-source
resistance (rd). As VGS becomes
more negative, the resistance
(rd) increases.
ro
rd =
2
 V 
 1 − GS 
 VP 
16
p-Channel JFETS
The p-channel JFET behaves the

same as the n-channel JFET,
except the voltage polarities and
current directions are reversed.
17
p-Channel JFET Characteristics
As VGS increases more positively
• The depletion zone

increases
• ID decreases (ID < IDSS)
• Eventually ID = 0 A
Also note that at high levels of VDS the JFET reaches a breakdown situation: ID
increases uncontrollably if VDS > VDSmax.
18
N-Channel JFET Symbol
19
JFET Transfer Characteristics
The transfer characteristic of input-to-output is not as straightforward in

a JFET as it is in a BJT.
In a BJT,  indicates the relationship between IB (input) and IC (output).
In a JFET, the relationship of VGS (input) and ID (output) is a little more

complicated:
2
 V 
I D = I DSS  1 − GS 

 VP
 
20
JFET Transfer Curve
This graph shows the

value of ID for a
given value of VGS.
21
Plotting the JFET Transfer Curve
Using IDSS and Vp (VGS(off)) values found in a specification sheet, the transfer
curve can be plotted according to these three steps:
Step 1
2
 V 
I D = I DSS  1 − GS 
 VP 
Solving for VGS = 0V ID = IDSS
Step 2
2
 V 
I D = I DSS  1 − GS 
 VP 
Solving for VGS = Vp (VGS(off)) ID = 0A
Step 3
2
 V 
Solving for VGS = 0V to Vp I D = I DSS  1 − GS 
 VP 
22

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Field Effect Transistor

FETs vs. BJTs

•JFET: Junction FET

•MOSFET: Metal–Oxide–Semiconductor FET

▪D-MOSFET: Depletion MOSFET

The n-channel is more widely used.

There are three terminals:

•Drain (D) and Source (S) are connected to the n-channel

The source of water pressure is the

The drain of water is the electron

The control of flow of water is the

There are three basic operating conditions for a JFET:

• VGS = 0, VDS increasing to some positive value

• Increasing the depletion region,

• Even though the n-channel resistance

If VGS = 0 and VDS is further increased to

This suggests that the current in the n-

At the pinch-off point:

• Any further increase in VGS does not

• The ohmic value of the channel is

As VGS becomes more negative, the

• The JFET experiences

• ID decreases (ID < IDSS) even

The JFET can be used as a

The p-channel JFET behaves the

As VGS increases more positively

• The depletion zone

The transfer characteristic of input-to-output is not as straightforward in

In a BJT,  indicates the relationship between IB (input) and IC (output).

In a JFET, the relationship of VGS (input) and ID (output) is a little more

This graph shows the

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