Department of Electrical Engineering

Faculty Member: Engr. Waqas Mohyuddin Dated: 16TH April, 2024

Semester: 4TH Section: BEE-14-B

EE215: ELECTRONIC DEVICES AND

CIRCUITS

Lab 09: Mosfet operation and IV

characteristics

PLO4/CLO4 PLO5/CL PLO8/CLO PLO9

O5 6

Name Reg. No Viva /Quiz Analysi Modern Ethics and Indivi

/ Lab s of data Tool Safety and
Performan in Lab Usage Teamw
ce Report 5 marks
5 marks 5 mark
5 marks 5 marks

M. Abu Bakar Farooq 410892

M. Hamza Ijaz 413624

M. Abu Bakr Hashim 411421

EE215: Electronic Devices and Circuits 1

 Lab 09: Mosfet operation and IV characteristics
Objective
The objective of this lab is to measure the transfer characteristic curve of
an NMOS transistor; Determine its threshold voltage &
transconductance parameter gm.

Equipment Required

The following components and test equipment are required.

• MOSFET 2N7000
• Multimeter
• Resistors
• DC Power Supply
• PSpice Simulation Software.

The Experiment:

The experiment is broken down into two exercises. The first

exercise involves the simulation of the circuit on PSpice using
OrCAD- Capture module. The second one involves the practical
setup of the circuit and making required measurements, tabulation,
and its analysis.

Theory:

MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a

type of transistor that is commonly used in electronic circuits as a switch
or an amplifier. It is made up of three layers: a source, a gate, and a
drain. The gate is separated from the other two layers by a thin layer of
insulating material called the gate oxide. When a
voltage is applied to the gate, an electric field is
created between the gate and the source, which
controls the flow of current between the source
and the drain. MOSFET operates in three different
regions: the cutoff region, the saturation region,
and the linear or triode region.
In the cutoff region, the MOSFET is
effectively turned off, and there is no current
flowing
between the source and the drain. In the saturation
region, the MOSFET is fully turned on, and there
EE215: Electronic Devices and Circuits 2
 is a maximum current flowing between the source and the drain. In the
linear or triode region, the MOSFET is partially turned on, and the current
flowing between the source and the drain is proportional to the voltage
applied to the gate.

MOSFETs have several advantages over other types of transistors, such

as low power consumption, high input impedance, and high switching
speed. They are commonly used in digital circuits, power amplifiers, and
switching circuits, among other applications.

Transfer characteristics:

The transfer characteristic curve of an N-channel MOSFET is a plot of the

drain current (ID) versus the gate-source voltage (VGS) at a constant
drain-source voltage (VDS). It shows how MOSFET behaves as an
amplifier or switch.

The transfer characteristic curve provides important information about the

MOSFET's operating characteristics, such as:

Threshold voltage: The voltage at which the MOSFET starts conducting,

i.e., the gate voltage at which the drain current starts to flow. This is the
point where the curve starts to rise from zero.

Saturation region: The region where the MOSFET is fully turned on, and
the drain current is maximum. This occurs when the gate-source voltage is
sufficiently high to create a conducting channel between the source and
drain.
EE215: Electronic Devices and Circuits 3
 Linear region: The region where the MOSFET is partially turned on, and
the drain current varies linearly with the gate-source voltage. This
occurs when the gate voltage is not high enough to create a conducting
channel, and the MOSFET operates in depletion mode.

Drain-source resistance: The slope of the linear region of the transfer

characteristic curve is related to the drain-source resistance of the
MOSFET. This resistance can be calculated from the change in
voltage and current in the linear region.

Transconductance: The slope of the saturation region of the transfer

characteristic curve is related to the transconductance of the
MOSFET. This is the gain of the MOSFET as an amplifier and can be
calculated from the change in current and voltage in the saturation
region.

In summary, the transfer characteristic curve of an N-channel MOSFET

provides valuable information about its operating characteristics, including
the threshold voltage, saturation and linear regions, drain-source
resistance, and transconductance. These parameters are essential
for designing and analyzing MOSFET-based circuits and
amplifiers.

EXERSCISE

A suggested circuit for determining the behavior of a MOSFET is shown

in fig no. 1.

EE215: Electronic Devices and Circuits 4

 Fig no. 1

Simulation:

• Create the circuit shown in Figure 1 in PSpice.

• Use an Mbreak N3 part for the FET.

• Right click on FET and select “Edit PSpice model”.

EE215: Electronic Devices and Circuits 5

 • Set the parameter as follows:

.model Mbreakn NMOS KP=35m W=200u L=100u VTO=2.1

• Set the drain to source voltage VDS constant at 10V.

• Create a new simulation profile and set the analysis type as DC

Sweep.

• Set the “primary sweep” to sweep V1 in fig 1, linearly from 0

to 2V with a 0.01V increment.

• Place the current marker at drain terminal of the MOSFET.

• Run the simulation.

• Obtain the transfer curve of the circuit simulated in fig 1 i.e., Plot
VGS versus ID

EE215: Electronic Devices and Circuits 6

 IMPLEMENTATION

1) Construct the circuit above. Use the multi-meter to measure the drain current,
Id and to measure VDS and VGS. Use the DC power supply for VGG and for
VDD.

EE215: Electronic Devices and Circuits 7

 Id= 0 mA VDS= 0 V VGS= 0 V

2) Set VGG to 0V and VDD to 5V and measure VDS and ID.

Id= 61.2 uA VDS= 5 V

3) Slowly increase VGG until the transistor just begins to conduct current as
evidence by small drop in VDS. Record the value of VGS as gate threshold
voltage, Vth

Vth= 0.78 V

4) Adjust VGG to increase VGS by 0.2V above the threshold. Readjust VDD to
return VDS to 5V and then measure the drain current Id. Record the value of
VGS in the first column of table 1 and record value of Id in second column (the
VDS=5V column)

5) Continue to increase VGS in steps of 0.2V while maintaining VDS at 5V.

Measure the drain current at each step. Record the values of VGS and Id in table
1.

6) Complete the entries in table 1 by adjusting VDD and VGG to obtain various
required VDS and VGS values, then measuring ID at each value.

7) Plot the data for each value of VGS to obtain ID vs VDS curve.

EE215: Electronic Devices and Circuits 8

 VGS = 0V VGS = 1 VGS = 1.5 VGS = 2 VGS = 2.5

VDS ID (mA) VDS ID (mA) VDS ID (mA) VDS ID (mA) VDS ID

(V) (V) (V) (V) (V) (mA)
0 0 0 0 0 0 0 0 0 0

1 0 1 0 1 0.512 1 4.5 1 8.5

2 0 2 0.0046 2 0.714 2 16.9 2 17.4

3 0 3 0.012 3 0.916 3 25.9 3 26.1

4 0 4 0.026 4 1.228 4 34.2 4 35.3

5 0 5 0.010 5 1.769 5 42.6 5 44.4

6 0 6 0.030 6 1.361 6 50.5 6 58.8

7 0 7 0.058 7 2.294 7 61.7 7 69

8 0 8 0.072 8 3.01 8 69.5 8 79.9

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