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Basic Electronics Engineering 1

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0% found this document useful (0 votes)
118 views4 pages

Basic Electronics Engineering 1

Uploaded by

shivamvyasq
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Total No. of Questions: 6 Total No.

of Printed Pages:3

Enrollment No......................................

Faculty of Engineering / Science


End Sem (Even) Examination May-2022
EN3ES16 / SC3ES03 Basic Electronics Engineering
Programme: B.Tech. / Branch/Specialisation: All /
B.Sc. AIML/CS/CTIS/MAIS
Duration: 3 Hrs. Maximum Marks: 60
Note: All questions are compulsory. Internal choices, if any, are indicated. Answers of
Q.1 (MCQs) should be written in full instead of only a, b, c or d.
Q.1 i. Depletion region contains- 1
(a) Free holes (b) Free electrons
(c) Immobile charge carriers (d) All of these
ii. Zener diodes are also known as- 1
(a) Voltage regulators (b) Forward bias diode
(c) Breakdown diode (d) Current regulators
iii. BJT is- 1
(a) Voltage control device
(b) A current controlled device
(c) A temperature-controlled device
(d) A Forward device
iv. A JFET is also called _________ transistor. 1
(a) Unipolar (b) Bipolar (c) Unijunction (d) Current
v. When aliasing takes place? 1
(a) Sampling signals less than Nyquist Rate
(b) Sampling signals equal to Nyquist Rate
(c) Sampling signals more than Nyquist Rate
(d) Sampling signals at a rate which is twice of Nyquist Rate
vi. What is the role of channel in communication system? 1
(a) Converts one form of signal to other
(b) Allows mixing of signals
(c) Acts as a medium to send message signals from transmitter to
receiver
(d) Helps to extract original signal from incoming signal

P.T.O.
[2] [3]

vii. How many AND, OR and EXOR gates are required for the 1 OR iii. Compare the FET and enhancement type MOSFET under given 6
configuration of full adder? points:
(a) 1, 2,1 (b) 2, 1, 2 (c) 3, 1, 2 (d) 2,1 ,3 (a) Construction (with label diagram)
viii. DeMorgan’s theorem states that _________. 1 (b) Operation
(a) (A + B)’ = A’ * B (b) A’ + B’ = A’B’
(c) (AB)’ = A’ + B’ (d) (AB)’ = A’ + B Q.4 i. Explain the following: 4
ix. __________ provides different types of waveforms such as sine, 1 (a) Pulse amplitude modulation with diagram.
triangular, square, pulse etc at the output. (b) Need of modulation
(a) Oscillator (b) Signal generator ii. An audio frequency signal 10Sin(2π500)t is used to amplitude 6
(c) DC Tachometer generator (d) Multimeter modulate a carrier of 50Sin(2π105)t.
x. In any device, the difference between the measured value & true value 1 Calculate.
is referred as- (a) Modulation index
(a) Error (b) Expected value (c) Lag (d) Accuracy (b) Sideband frequencies
(c) Bandwidth required
Q.2 i. Explain LED under these points: 2 (d) Total power deliver to the load at 600Ω
(a) LED working principle OR iii. Explain the following: 6
(b) Draw LED Symbol and advantages of LEDs (a) Compare AM, FM and PM
ii. Draw the following with proper labelling: 3 (b) Simplex and duplex system with an example
(a) VI characteristics of a Zener diode (c) State sampling theorem
(b) Positive clamper circuit with input and output waveform
(c) Bridge rectifier circuit with input and output waveform Q.5 i. (a) Reduce the following Boolean expression using Boolean laws. 4
iii. Explain half wave rectifier and full wave rectifier under the following 5 Y = AB + (A + B) (A + B).
points: (b) Draw the symbol and write logic expression and truth table of the
(a) Construction and circuit diagram two input universal logic gates
(b) Ripple factor and efficiency expression ii. Minimize the following expression using K-map. 6
OR iv. Explain the operation of PN-Junction diode under the following points: 5 f (P, Q, R, S) = Σ m (0, 1, 5, 9, 13,14, 15) + d (3,4,7,10,11)
(a) Construction Also draw minimize expression using logic gate.
(b) Forward bias condition with VI characteristic OR iii. (a) Explain Von Neumann architecture with diagram in detail. 6
(c) Reverse bias condition with VI characteristic (b) Convert the following:
(i) (11001010.1)2 = (?)10
Q.3 i. Discuss the transistor under following points: 4 (ii) (536)8 = (?)16
(a) Transistor types with their symbolic representation
(b) Transistor working (any one type) Q.6 Attempt any two:
(c) Name of the transistor configurations i. Write any two applications of function generator. 5
ii. Draw the NPN common emitter circuit and sketch the input and output 6 ii Sketch Block diagram of CRO and state function of each block. 5
characteristics. Also explain active region, cutoff region and iii Explain Cathode Ray tube with suitable diagram. 5
saturation region by indicating them on the characteristic curve.
******
Marking Scheme iii. Explain half wave rectifier and full wave rectifier under the following 5
EN3ES16 / SC3ES03 Basic Electronics Engineering points:
(a) Construction 1.5 marks
Q.1 i. Depletion region contains- 1 Circuit diagram 1.5 marks
(c) Immobile charge carriers (b) Ripple factor 1 mark
ii. Zener diodes are also known as- 1 Efficiency expression 1 mark
(c) Breakdown diode OR iv. Explain the operation of PN-Junction diode under the following points: 5
iii. BJT is- 1 (a) Construction 1 mark
(b) A current controlled device (b) Forward bias condition with VI characteristic 2 marks
iv. A JFET is also called _________ transistor. 1 (c) Reverse bias condition with VI characteristic 2 marks
(a) Unipolar
v. When aliasing takes place? 1 Q.3 i. Discuss the transistor under following points: 4
(a) Sampling signals less than Nyquist Rate (a) Transistor types with their symbolic representation
vi. What is the role of channel in communication system? 1 1 mark
(c) Acts as a medium to send message signals from transmitter to (b) Transistor working (any one type) 2 marks
receiver (c) Name of the transistor configurations 1 mark
vii. How many AND, OR and EXOR gates are required for the 1 ii. Draw the NPN common emitter circuit 1.5 marks 6
configuration of full adder? Sketch the input and output characteristics. 1.5 marks
(b) 2, 1, 2 Active region, cutoff region and saturation region 3 marks
viii. DeMorgan’s theorem states that _________. 1 OR iii. Compare the FET and enhancement type MOSFET 6
(c) (AB)’ = A’ + B’ (a) Construction (with label diagram) 3 marks
ix. __________ provides different types of waveforms such as sine, 1 (b) Operation 3 marks
triangular, square, pulse etc at the output.
(b) Signal generator Q.4 i. Explain the following: 4
x. In any device, the difference between the measured value & true value 1 (a) Pulse amplitude modulation with diagram. 2 marks
is referred as- (b) Need of modulation 2 marks
(a) Error ii. (a) Modulation index 1.5 marks 6
(b) Sideband frequencies 1.5 marks
Q.2 i. Explain LED under these points: 2 (c) Bandwidth required 1.5 marks
(a) LED working principle 1 mark (d) Total power deliver to the load at 600Ω 1.5 marks
(b) Draw LED Symbol 0.5 mark OR iii. Explain the following: 6
Advantages of LEDs 0.5 mark (a) Compare AM, FM and PM 2 marks
ii. Draw the following with proper labelling: 3 (b) Simplex and duplex system with an example 2 marks
(a) VI characteristics of a Zener diode 1 mark (c) State sampling theorem 2 marks
(b) Positive clamper circuit with input and output waveform
1 mark Q.5 i. (a) Reduce the following Boolean expression using Boolean laws. 4
(c) Bridge rectifier circuit with input and output waveform Y = AB + (A + B) (A + B). 2 marks
1 mark (b) Draw the symbol and write logic expression and truth table of the
two input universal logic gates 2 marks
ii. Minimize the following expression using K-map. 4 marks 6
Draw minimize expression using logic gate 2 marks
OR iii. (a) Explain Von Neumann architecture with diagram 4 marks 6
(b) Convert the following:
(i) (11001010.1)2 = (?)10 1 mark
(ii) (536)8 = (?)16 1 mark

Q.6 Attempt any two:


i. Any two applications of function generator 5
2.5 marks for each (2.5 marks * 5)
ii Sketch Block diagram of CRO 2 marks 5
Function of each block 3 marks
iii Cathode Ray tube 2 marks 5
Suitable diagram 3 marks

******

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