JAIPUR ENGINEERING COLLEGE

AND RESEARCH CENTRE

• Year & Sem – Ist Year , Ist Sem
• Subject – Engineering Physics
• Chapter –Material Science and Semiconductor Physics
(Part-B)
• Department- Applied Science (Physics)

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 VISION

To become a renowned institute of outcome

based learning and work towards academic,
professional, cultural and social enrichment of
the lives of individuals and communities.

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 MISSION
• Focus on valuation of learning outcomes and
motivate students to inculcate research aptitude by
project based learning.
• Identify based on informed perception of Indian,
regional and global needs, the areas of focus and
provide platform to gain knowledge and solutions.
• Offer opportunities for interaction between academia
and industry.
• Develop human potential to its fullest extent so that
intellectually capable and imaginatively gifted
leaders can emerge in a range of professions.
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 Syllabus & Course Outcomes

• Syllabus :- Material Science & Semiconductor Physics:

Bonding in solids: covalent and metallic bonding, Energy
bands in solids: Classification of solids as Insulators,
Semiconductors and Conductors, Intrinsic and extrinsic
semiconductors, Fermi dirac distribution function and
Fermi energy, Conductivity in semiconductors, Hall Effect:
Theory, Hall Coefficient and applications.
• Course Outcomes: Students will be able to describe key
concepts, fundamental laws of Hall effect, electrical
conductivity to understand the Physics of semiconductors
and materials.

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 CONTENTS

• Semiconductors and its types

• Conductivity in Semiconductors
• Hall Effect and its applications
• Problems
• Lecture contents with a blend of NPTEL contents and
other platforms
• References/ Bibliography

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 Lecture Plan
Lectures Lect.
S. No Topics
required No.
1 Semiconductors: intrinsic and extrinsic 1
1
semiconductors
2
Conductivity in Semiconductors. 1 2

3
Hall Effect: Theory & Hall coefficient 1 3

4
Applications of Hall effect and Problems 1 4

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 Semiconductors

• Semiconductors are those substances whose

conductivity or resistivity lies in between conductors
and insulators.
• At absolute zero semiconductors behave as perfect
insulators.
• The interesting feature of semiconductors is that they
are bipolar and current is transported by two charge
carriers (electrons and holes) of opposite sign.

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 Types of Semiconductors

Semiconductors are mainly of two types-

(a) Intrinsic semiconductors
(b) Extrinsic semiconductors

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 Intrinsic Semiconductors

• Pure semiconductors are called intrinsic semiconductors.

• At absolute zero they behave as perfect insulators and
conductors at higher temperatures.
• Silicon and Germanium are best examples and they possess
diamond cubic crystalline structures .
• Since the electrons and holes are generated in pairs,
concentration of electrons is equal to the concentration of
holes. Hence Fermi level lies in between valence band and
conduction band.

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 Extrinsic semiconductors
• Extrinsic semiconductors are those in which
impurities of large quantity are present. Usually the
impurities can be either 3rd group or 5th group
elements.
• Based on the impurities present, extrinsic
semiconductors are classified in two categories-
(a) N- type semiconductors
(b) P- type semiconductors

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 N- type semiconductors
• If a 5th group impurity element is added to a pure
semiconductor , N - type semiconductor is formed. eg. P, As,
• Electrons are the majority charge carriers and holes are
minority charge carriers.
• When any pentavalent element such as phosphorous is added
to pure semiconductors four electrons are involved in covalent
bonding with four neighboring pure semiconductor atoms.
• The fifth electron is free and weekly bound to the parent
atom. These are also called donors since each impurity element
provides one free electron to the crystal.
• The donor level lies very close to the conduction band since
there is an increase in the concentration of electrons in the
conduction band.

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 P- type semiconductors
• If a 3rd group impurity element is added to a pure
semiconductor , P- type semiconductor is formed. Eg. Al, B, In
• Holes are the majority charge carriers and electrons are
minority charge carriers.
• When any trivalent impurity element such as In is added to
intrinsic semiconductor all the three electrons are involved in
covalent bonding with three neighboring Si atoms.
• These compounds accepts one extra electron from the
neighboring atoms to complete the fourth covalent bond. So
these are also called acceptors.
• The donor level lies very close to the valence band since there
is an decrease in the concentration of electrons in the valence
band.
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Conductivity in Semiconductors

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 Conductivity in Semiconductors
• The electric field ‘E’ exist along X-direction. The field accelerate electrons
along –ve X direction and holes along +ve X direction.
• The current density due to the movement of electrons is given by
Jn = qnvd = qnµn E ………….. (1) ( where vd= µE )
• The current density due to the movement of holes is given by
Jp = qpvd = qpµP E ……………. (2)

(Where vd = Drift velocity of charge carriers, n = concentration of electrons,

p= concentration of holes , µ = mobility of charge carriers ,E= electric
field)
Adding eqs (1) and (2)
J = Jn + Jp
J = qnµnE + qpµPE
J = q(nµn + pµP)E ….. (3)
Since J =σ E ………………… (4)

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 Conductivity in Semiconductors
Comparing 3rd and 4th
σ = q(nµn + pµP) ……………(5)
σ = conductivity of semiconductors
In intrinsic semiconductors :
since n= p= ni , (where ni = intrinsic concentration)
σi = q ni(µn +µP)
In Extrinsic semiconductors :
(a) N- type semiconductors
σn = qnµn ( since n>> p)
(b) P- type semiconductors
σp = qpµP ( since p>> n)

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 Hall Effect

If a specimen ( metal or a semiconductor ) carrying a current (I)

is placed perpendicular to a magnetic field (B) than an electric
field is developed perpendicular to both I and B. This
developed electric field is called Hall electric field (EH).

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 Problems
• A n-type semiconductor sample has a hall coefficient
0.0125m3c-1 and the mobility of majority charge carriers is
0.36 m2v-1s-1 and a 100 v/m electric field apply on the sample
of n-type semiconductor. Find the current density in the
sample.
• The Hall coefficient of a specimen of a doped silicon is found
to be 3.66x10-4 m3c-1. The resistivity of the specimen is
8.93x10-3 ohm meter. Find the mobility and density of charge
carriers.
• In a semiconductor there are 5x1019electrons and 8x1020 holes
per cube meter. If the mobilities of electrons and holes
respectively 0.09 and 0.05 m2v-1s-1 the determine the
hall coefficient of semiconductor.

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 LECTURE CONTENTS WITH A BLEND
OF NPTEL CONTENTS AND OTHER
PLATFORMS
• https://youtu.be/03j4ZvQCKWY
(Video lecture by Dr. Amitava Dasgupta)
• https://youtu.be/rwCsBE_06FU
(Video lecture by Prof. V.K. Tripathi)
• https://nptel.ac.in/courses/108/108/108108122/
(Video lecture by Prof. Digbijoy N.Nath)
• http://www.digimat.in/nptel/courses/video/115103102
/L23.html (Video lecture by Prof. Saurabh Basu)

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 REFERENCES/BIBLOGRAPHY
• Material Science by Smith, MC Graw Hill , New Delhi
• Handbook of Electronics by G.K. Mithal
• Integrated electronics by Jacob Millman and Hailkias ,Mc
Graw Hill Ltd
• Engineering Physics by Dr. Y.C.Bhatt , Ashirwad
Publications
• Engineering Electronics by John D Ryder, MC Graw Hill
, New Delhi
• Solid State Physics by S. O. Pillai, New Age International
Publisher

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Thank You !

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