STK0260I

Semiconductor
Advanced Power MOSFET

SWITCHING REGULATOR APPLICATIONS

Features
• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=6.0pF(Typ.)
• Low gate charge : Qg=8.4nC(Typ.)
• Low RDS(on) :RDS(on)=4.0Ω(Max.)
Ordering Information
Type NO. Marking Package Code

STK0260I STK0260 I-PAK

Outline Dimensions unit : mm

6.40~6.60
2.20~2.40
5.14~5.64
0.40~0.60
1.50 Typ.

5.90~6.30
1.00 Typ.

1.32 Max.
1.80 Typ.

9.00~9.60

9.96 Max.

0.86 Max. 0.60 Max.

2.30 Typ. 2.30 Typ.

1 2 3

PIN Connections
1. Gate
2. Drain
3. Source

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Absolute maximum ratings (Tc=25°C)

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 600 V
Gate-source voltage VGSS ±30 V
(Tc=25℃) 2.0 A
Drain current (DC) ID
(Tc=125℃) 1.2 A
*
Drain current (Pulsed) IDP 8.0 A
Drain Power dissipation PD 34 W
Avalanche current (Single) ② IAS 2.0 A
Single pulsed avalanche energy ② EAS 42 mJ
Avalanche current (Repetitive) ① IAR 2.0 A

Repetitive avalanche energy ① EAR 3.7 mJ

Junction temperature TJ 150
°C
Storage temperature range Tstg -55~150
* Limited by maximum junction temperature

Characteristic Symbol Typ. Max Unit

Thermal Junction-case Rth(J-C) - 3.67
℃/W
resistance Junction-ambient Rth(J-a) - 62.5

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Electrical Characteristics (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS ID=250μA, VGS=0 600 - - V
Gate-threshold voltage VGS(th) ID=250μA, VDS= VGS 2.0 - 4.0 V
Drain-source leakage current IDSS VDS=600V, VGS=0V - - 1 μA
Gate-source leakage IGSS VDS=0V, VGS=±30V - - ±100 nA
Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=1.0A - 3.8 4.7 Ω
Forward transfer admittance ④ gfs VDS=10V, ID=1.0A - 2.3 - S
Input capacitance Ciss - 290 435
VGS=0V, VDS=25V, f=1MHz
Output capacitance Coss - 33 49 pF
Reverse transfer capacitance Crss - 6.0 9.0
Turn-on delay time td(on) - 22 -
VDD=300V, VGS=10V
Rise time tr - 10.5 -
ID=2.0A, RG=25Ω ns
Turn-off delay time td(off) ③④ - 7 -
Fall time tf - 10.5 -
Total gate charge Qg - 8.4 12.6
VDD=300V, VGS=10V
Gate-source charge Qgs ID=2.0A - 1.4 2.1 nC
Gate-drain charge Qgd ③④ - 2.6 3.9

Source-Drain Diode Ratings and Characteristics (Tc=25°C)

Characteristic Symbol Test Condition Min Typ Max Unit
Continuous source current IS Integral reverse diode - - 2.0
A
Source current (Pulsed) ① ISM in the MOSFET - - 8.0
Forward voltage ④ VSD VGS=0V, IS=2.0A - - 1.4 V
Reverse recovery time trr Is=2.0A, VGS=0V - 230 - ns
Reverse recovery charge Qrr dis/dt=100A/us - 0.84 - uC

Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=9.5mH, IAS=2.0A, VDD=50V, RG=25Ω
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature

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Electrical Characteristic Curves

Fig. 1 ID - VDS Fig. 2 ID - VGS

Fig. 3 RDS(on) - ID Fig. 4 IS - VSD

Fig. 5 Capacitance - VDS Fig. 6 VGS - QG

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Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ

C
C

Fig. 9 ID - TC Fig. 10 Safe Operating Area

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Fig. 11 Gate Charge Test Circuit & Waveform

Fig. 12 Resistive Switching Test Circuit & Waveform

Fig. 13 EAS Test Circuit & Waveform

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Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

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The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.

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