Scribd
Upload
8 views37 pages

Basics of Electronics 3

Uploaded by

kangirene9705
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
8 views37 pages

Basics of Electronics 3

Uploaded by

kangirene9705
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 37

MAR BASELIOS COLLEGE OF ENGINEERING AND TECHNOLOGY

(Autonomous)
Mar Ivanios Vidya Nagar, Nalanchira

Course Name: Basics of Electrical and Electronics Engineering


Course Code: ES0U10D

Part: II
Basics of Electronics Engineering
Bipolar Junction Transistor (BJT)

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING


Introduction

• The transistor was invented in 1948 at Bell Laboratory in America.

• The invention of transistors completely revolutionized the electronic industry and transistors have
almost replaced bulky vacuum tubes.

• The important advantages of transistors over tubes are

• No heater or filament is required

• Faster switching

• Much smaller in size and light weight

• Consume very little power

• Long life

• Greater circuit efficiency


Transistor Operation

• A PN junction under reverse bias condition cannot conduct much

• There is only microamperes or nanoamperes of current due to thermally generated minority


carriers.

• If we are able to supply minority carriers, a reverse biased pn junction can conduct heavily.

• There are different mechanisms by which minority carriers can be supplied, such as by thermal
energy, light energy etc.
Transistor Operation

• In transistors, the required minority carriers are supplied by using a forward biased pn junction.

• A PN junction under forward biased condition can inject minority carriers i.e., the p-region inject
holes into n- region and n- region inject electrons into p-region.

• Thus a forward biased PN junction acts as a minority carrier injection device

• It is utilized in a transistor to increase the conductivity of a reverse biased PN junction.

• Therefore transistor can be considered as a combination of forward biased and reverse biased PN
junctions
Structure of a Transistor

• In a transistor, two PN junctions are connected back to back

• It is basically a silicon or germanium crystal containing three separate regions

• Two types

• NPN

• PNP
Structure of a Transistor

• Transistor has three regions.

• The middle region is called the base and the two outer
regions are called the emitter and the collector.

• Although the two outer regions are of the same type, their
functions cannot be interchanged.

• The two regions have different physical and electrical


properties.
Structure of a Transistor

• Emitter region is supplying the majority carriers required


for a transistor to conduct

• So it is made with highest doping concentration.

• Majority of these carriers should take part in the conduction of a


transistor and hence the recombination within the base region
should be minimum.

• Therefore, base is made with smallest area.

• It should also be ensured that the carriers injected from base to


emitter be minimum as it does not contribute to the overall
conduction of a transistor.

• Thus the base region has the lowest doping concentration.


Structure of a Transistor

• The collector is supposed to collect the carriers injected


from the emitter

• Hence it should have sufficient power handling capacity.

• This emphasizes the need for largest area for the


collector.

• In general, area wise distribution of a transistor is


collector> emitter> base

• Doping concentration wise distribution is emitter >


collector > base.
Biasing of a Transistor

• A transistor has two PN-junctions.

• One junction is between the emitter and the base and is called the emitter-base junction or
simply the emitter junction.

• The other junction is between the base and the collector and is called collector-base junction or
simply the collector junction.

• There are four possible ways of biasing these junctions


Working of an NPN Transistor - Case 1: When two switches (S1 and S2) are open

• Consider an NPN transistor

• The battery VEE acts to forward bias the emitter junction, and the battery Vcc acts to
reverse bias the collector junction.

• Switches S1 and S2 have been provided in the emitter and collector circuits.

• When the two switches are open, the two junctions are unbiased. We thus have depletion or
space-charge regions at the two junctions.
Working of an NPN Transistor - Case 2: When S1 is closed and S2 is open

• If S1 is closed and S2 is open, the emitter junction


will be forward biased.

• The barrier at the emitter junction is reduced.

• Since the emitter and base regions are just like those
in a PN diode, we can expect a large current due to
forward biasing.

• It is due to the diffusion of majority carriers


across the junction.

• Electrons diffuse from the emitter to the base and


holes from base to emitter
Working of an NPN Transistor - Case 2: When S1 is closed and S2 is open
Working of an NPN Transistor - Case 2: When S1 is closed and S2 is open
Working of an NPN Transistor - Case 2: When S1 is closed and S2 is open
Working of an NPN Transistor - Case 3: When S1 is Open and S2 is Closed
Working of an NPN Transistor - Case 4: When S1 and S2 is Closed
Transistor Configurations

• Transistor configuration explains how a transistor can be connected in different circuits

• Based on which terminal is common to both input and output, transistor can be configured in 3 ways

• Common Base (CB) Configuration

• Common Emitter (CE) Configuration

• Common Collector(CC) configuration


Common Base (CB) Configuration

• Base is made common to both input( Emitter) and Output (Collector)


Common Base (CB) Configuration

Input Terminal Input Output Terminal Output Current Gain


Current Current
Emitter Collector
Common Emitter (CE) Configuration

• Emitter is made common to both input( Base) and Output (Collector)


Common Emitter (CE) Configuration

Input Terminal Input Output Terminal Output Current Gain


Current Current
Base Collector
Common Collector (CC) Configuration

• Collector is made common to both input( Base) and Output (Emitter)


Common Collector (CC) Configuration

Input Terminal Input Output Terminal Output Current Gain


Current Current
Base Emitter
We know that

Or
Characteristics of Common Emitter (CE) Configuration

• The features of Common Emitter (CE) configuration can be explained with the help of
characteristics (Graph)

• There are two characteristics

• Input Characteristics

• Output Characteristics
Characteristics of Common Emitter (CE) Configuration: Input Characteristics
Characteristics of Common Emitter (CE) Configuration: Input Characteristics
Early effect or Base width Modulation
Characteristics of Common Emitter (CE) Configuration: Output Characteristics
Characteristics of Common Emitter (CE) Configuration: Output Characteristics
Characteristics of Common Emitter (CE) Configuration: Output Characteristics

• Output characteristics of CE configuration is divided


into three regions

• Cut off region

• Saturation Region

• Active region
Characteristics of Common Emitter (CE) Configuration: Output Characteristics
Characteristics of Common Emitter (CE) Configuration: Output Characteristics

• Saturation Region: This is a low voltage high current


region in which the transistor is perfectly ON.

• Here both input and output junctions are forward


biased
Characteristics of Common Emitter (CE) Configuration: Output Characteristics

• Active Region: The remaining portion of the


characteristics is the active region which is the normal
region of operation of a transistor.

• In active region input junction is forward biased and


the output junction is reverse biased.
Characteristics of Common Emitter (CE) Configuration: Output Characteristics

• A transistor is thus normally OFF in the cut off


region and ON in the saturation region.

• This shows that a transistor can be used as a switch by


operating in saturation and cut off region.

• In active region the characteristic curves are linear,


parallel and equidistant for equal increments in the
parameter.

• So the transistor can be used as an amplifier in


active region.
Comparison between CB,CE and CC

You might also like