2N7002

N-Channel Enhancement Mode Power MOSFET

General Features
VDS = 60V,ID = 0.3A
RDS(ON) < 3Ω @ VGS=5V
RDS(ON) < 2Ω @ VGS=10V

ESD Rating HBM 2300V

High power and current handing capability Schematic diagram

Lead free product is acquired

Surface mount package

Application
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids, lamps, hammers,display,
memories, transistors, etc. Marking and pin assignment

Battery operated systems

Solid-state relays

SOT-23 top view

Package Marking And Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
7002 2N7002 SOT-23 Ø180mm 8 mm 3000 units

Absolute Maximum Ratings (TA=25 unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
TA =25 0.3
Continuous Drain Current (TJ =150 ) ID A
TA =100 0.19
(Note 1)
Drain Current-Pulsed IDM 0.8 A
Maximum Power Dissipation PD 0.35 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150

Thermal Characteristic

(Note 2)
Thermal Resistance,Junction-to-Ambient RθJA 350 /W

2016-07
REV:O15
Electrical Characteristics (TA=25ćunless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 68 - V
Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA
VGS=±10V,VDS=0V - ±100 ±500 nA
Gate-Body Leakage Current IGSS
VGS=±20V,VDS=0V - ±4 ±10 uA
(Note 3)
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.7 2.5 V
VGS=5V, ID=0.4A - 1.3 3 Ω
Drain-Source On-State Resistance RDS(ON)
VGS=10V, ID=0.5A - 1 2 Ω
Forward Transconductance gFS VDS=10V,ID=0.2A 0.1 - - S
(Note4)
Dynamic Characteristics
Input Capacitance Clss - 21 50 PF
VDS=25V,VGS=0V,
Output Capacitance Coss - 11 25 PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 4.2 5 PF
(Note 4)
Switching Characteristics
Turn-on Delay Time td(on) - 10 - nS
Turn-on Rise Time tr VDD=30V,ID=0.2A - 50 - nS
Turn-Off Delay Time td(off) VGS=10V,RGEN=10Ω - 17 - nS
Turn-Off Fall Time tf - 10 - nS
VDS=10V,ID=0.3A,
Total Gate Charge Qg - 1.7 3 nC
VGS=4.5V
Drain-Source Diode Characteristics
(Note 3)
Diode Forward Voltage VSD VGS=0V,IS=0.2A - - 1.3 V
(Note 2)
Diode Forward Current IS - - 0.2 A

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production

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 RATING AND CHARACTERISTICS CURVES (2N7002)

Vdd ton toff

tr tf
td(on) td(off)
Rl
Vin 90%
D Vout 90%
Vgs Rgen VOUT INVERTED
G 10% 10%

90%
S VIN 50% 50%

10%
PULSE WIDTH

Figure 1:Switching Test Circuit Figure 2:Switching Waveforms

ID- Drain Current (A)

ID- Drain Current (A)

Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V)

Figure 3 Output Characteristics Figure 4 Transfer Characteristics
)
Rdson On-Resistance(
)
Rdson On-Resistance(

ID- Drain Current (A) Vgs Gate-Source Voltage (V)

Figure 5 Drain-Source On-Resistance Figure 6 Rdson vs Vgs
 RATING AND CHARACTERISTICS CURVES (2N7002)

Is- Reverse Drain Current (mA)

Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC) Vsd Source-Drain Voltage (V)

Figure 7 Gate Charge Figure 8 Source-DrainDiode Forward
Normalized On-Resistance

ID- Drain Current (A)

TJ-Junction Temperature( ) Vds Drain-Source Voltage (V)

Figure 9 Drain-Source On-Resistance Figure 10 Safe Operation Area
C Capacitance (pF)

Vds Drain-Source Voltage (V)

Figure 11 Capacitance vs Vds
Transient Thermal Impedance
RATING AND CHARACTERISTICS CURVES (2N7002)
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 12 Normalized Maximum Transient Thermal Impedance
 SOT-23 Package Information

Dimensions in Millimeters
Symbol
MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950TYP
e1 1.800 2.000
L 0.550REF
L1 0.300 0.500
θ 0° 8°

Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
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ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
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