1

 
IEEE ICCC 2023 1570913717
2  
3  
4  
5   1-Bit Reconfigurable Intelligent Surface Element
6  
7  
8  
Design and Its Equivalent Circuit Model
9  
10   Xin Zhang1 , Jian Sun1,∗ , Liqiang Ma1 , Wensheng Zhang1 and Cheng-Xiang Wang2,3,∗
2023 IEEE/CIC International Conference on Communications in China (ICCC) | 979-8-3503-4538-4/23/$31.00 ©2023 IEEE | DOI: 10.1109/ICCC57788.2023.10233397

11   1 School of Information Science and Engineering,

12   Shandong Provincial Key Lab of Wireless Communication Technologies, Shandong University, Qingdao 266237, China.
13   2
National Mobile Communications Research Laboratory, School of Information Science and Engineering,
14   Southeast University, Nanjing 210096, China.
3
15   Purple Mountain Laboratories, Nanjing 211111, China.
∗
16   Corresponding author
17   Emails: xinzhang [email protected], [email protected], [email protected], [email protected], [email protected]
18  
19  
20   Abstract—A 1-bit Reconfigurable Intelligent Surface (RIS) phase control is imperative. The reflecting performance of
21   element based on PIN diodes is designed in this paper. The a RIS element is influenced by its geometry, substrates, and
22   physics-based approach is adopted to develop the designed RIS diode types. The ECM of a RIS element based on a varactor
23   element’s equivalent circuit model (ECM). The ECM is derived
from the transmission-line circuit representation of the periodic diode was presented in the literature [10]. However, the
24   surface and the microstrip line theory, which incorporates the structure of the RIS element therein is relatively simple, and
25   designed RIS element’s geometry and electrical characteristics. the corresponding ECM is unsuitable for the element structure
26   The simplified and practical ECM could calculate the reflection designed in this article.
27   coefficients approximately to those provided by simulations, We design a 1-bit RIS element based on PIN diodes and
28   avoiding repetitive simulation during the early stages of RIS
develop a corresponding ECM. The ECM provides detailed
29   design. Finally, spectral efficiency is evaluated for the designed
RIS array used as a reflector for a base station with a directional theoretical formulas for the parameters of each lumped el-
30   antenna to serve a rectangular region. ement and is founded on the combination of transmission-
31   Index Terms—Equivalent Circuit Model, Reconfigurable In- line circuit descriptions of a periodic surface and microstrip
32   telligent Surfaces (RIS), Transmission Line (TL), PIN diode, line theory. It takes into account the RIS element’s electrical
33   Spectral Efficiency.
and geometrical properties. Because of the analytical nature
34  
of the suggested model, its computation time is practically
35   I. I NTRODUCTION
insignificant, which considerably reduces repeated simulation
36  
As the sixth generation (6G) wireless communication net- throughout the initial design stage. We validate the designed
37  
work system advances, Reconfigurable Intelligent Surface equivalent circuit model by comparing it to the simulation
38  
(RIS) technology has revealed its promise in catering to future results. The literature [1] suggests that spectral efficiency anal-
39  
communication needs [1], [2]. Due to its capacity to reflect ysis is essential for verifying and evaluating a designed RIS.
40  
electromagnetic waves to desired directions by controlling Consequently, considering that a single directional antenna is
41  
an array of reconfigurable passive reflecting elements, Re- configured at the base station to serve a rectangular region,
42  
43  
configurable Intelligent Surface (RIS) has become a potential a rectangular RIS array composed of the designed elements
44   solution to future communication problems [3]. It is the es- reflects the EM wave radiating from the antenna. The spectral
45   sential characteristic that enables the propagation environment efficiency of the whole area is evaluated by combining the
46   of electromagnetic radiation to be adjusted artificially. RISs path loss model [11], [12].
47   are more cost-efficient, being close to passive, as they do This paper is organized as follows. The architecture and
48   not require a power amplifier, which is usually found in specifications of the proposed 1-bit RIS element are described
49   traditional relay systems [4]. RIS must be constructed with in Section II. Section III elucidates the proposed ECM and the
50   a specific phase pattern by varying each element’s reflection corresponding theoretical derivation, including the proposed
51   coefficient to redirect the reflected electromagnetic wave in the RIS array’s spectral efficiency, given the rational pass loss
52   appropriate direction [5]. A RIS element may be seen as a 1- model. In Section IV, the ECM and spectral efficiency are
53   bit digital element if the phase shift while alternating between assessed. Finally, Section V summarizes this investigation.
54   the two states is within the range of 180◦ ± 20◦ [6].
II. RIS E LEMENT D ESIGN
55   To explain the working mechanism, numerous authors seek
56   to construct the corresponding circuit model of the RIS ele- Fig. 1 depicts the construction of the proposed 1-bit RIS
57   ment [7]–[9]. However, the proposed circuit models in these element. Three metal layers and two substrate layers comprise
60   literature sources fail to provide explicit theoretical equations most of the RIS element. A square patch and four microstrip
61   to solve the parameters of each lumped element in the models. lines constitute the metal on the upper layer. The square
62   Building an equivalent circuit model (ECM) to serve RIS patch is connected to the microstrip lines through two PIN
63  
64  
65  
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 TABLE I Patch
M AIN PARAMETERS OF RIS ELEMENT
z PIN
Parameter Value y
Periodicity Dx = Dy = 9.525 mm εr1
Sub1 x h1
Square size Lx = Ly = 5.2 mm
lP = 5.9024 mm, lV = 0.9547 mm, Ground Via
Microstrip lines
wP,V = 0.3 mm
εr2
Substrate FR-4 (εr1 = 4.1, h1 = 1.065 mm) Sub2 h2
Prepreg 7628 (εr2 = 4.7,
Bonding film Bias line
h2 = 0.2104 mm)
Via dh = 0.3 mm (a)
lP

lV
diodes. The ground plane is the second metal layer. The
rectangle patch’s via in the center provides PIN diodes with
voltage. The other two in the cross of two microstrip lines are
grounded. The first substrate is FR-4, with a permittivity of Dy Py dh
4.1. The second substrate is pre-impregnated materials of type
7628 with a permittivity of 4.7. The PIN diode is Skyworks
SMP1340 [13]. Fig. 2 illustrates its equivalent circuits. In the
Px y
”ON” state, the PIN diode can be seen as LON and RON in
series. In the ”OFF” state, the PIN diode can be represented
as a series of COFF , LOFF , and ROFF . Dx x
Two PIN diodes are oriented in two mutually perpendicular (b)
orientations, as shown in Fig. 1(b). This unique design enables
Fig. 1. Structure of the 1-bit RIS element based on PIN diodes: (a) side view
the designed RIS element to support multiple polarization and (b) top view.
modes. The primary induced current of the proposed RIS
element comes from the rectangular patch. The additional
microstrip lines and PIN diodes can modify the path of the element. The dramatic change in current distribution has also
induced current. Consequently, the PIN diode’s two states of been discussed in some papers [15], [16]. Subsequently, more
”ON” and ”OFF” can make the RIS element form two utterly than one equivalent circuit model is needed to characterize
different surface current distributions. When the geometry the two distinct states of the RIS element effectively. Some
dimensions are reasonable, the two states of the RIS element adjustments must be made to consider the effect of the PIN
produce a phase difference of 180◦ ± 20◦ in the operating diodes ON/OFF states.
frequency. These two phases correspond to ”0” and ”1”. Table According to the geometry of the top layer, the load
I exhibits the geometric structure and electrical parameters of impedance viewed from the air is divided into Zpatch and ZT .
the proposed RIS element. ZT denotes the impedances of the PIN diode, vias, and two
mutually perpendicular microstrip lines. The impedance of a
III. RIS E LEMENT M ODELING microstrip line parallel to the edge of the square is denoted as
A. Description of the equivalent circuit of the RIS element Z P . The impedance of the microstrip line perpendicular to the
edge of the square is denoted as Z V . When the PIN diodes are
Besides varactor diodes, the PIN diode is widely used in RIS OFF, the current cannot flow between the square metal and the
design, which has two different states, and its ECM is shown microstrip line. Therefore, the square metal and the T-shape
in Fig. 2. In [13], the equivalent circuit of the PIN diode has microstrip line are isolated. These two components are parallel
been verified by measurement. Therein a RIS array based on in the circuit model. When the PIN diodes are ON, the square
it has been proven to work well. The current ECM for a RIS metal’s induced current will flow through the PIN diodes and
with varactor is quite simple [10], [14]. The opposite phase reach the microstrip lines. Due to the conduction between the
is achieved by changing the vacator’s capacitance. However, square metal and the T-shape, these two components are in
replacing the varactor’s model with the PIN diode’s model series in the circuit. Fig. 3 indicates the ECM of the RIS
does not produce the expected reflective phase shift obtained element for PIN diodes with two states.
by CST simulation. Consequently, a suitable equivalent circuit
model must be constructed for a RIS element with PIN B. The Lumped-Element Electrical Model
diodes. It was discovered that the states of the PIN diode The ECM of the PIN diode-based 1-Bit RIS element can
significantly impact the overall current distribution of the RIS be seen in Fig. 3, considering the various components and the

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2
 geometry and can be expressed by the resistance, inductance,
COFF
and capacitance of the square metal’s equivalent series circuit
LON [19], as
LOFF 1
Zs = Rs + (1)
RON jωCs
ROFF where Rs and Cs are the resistance and capacitance caused
by the square metal, respectively. Like [17], the inductance
ON OFF of the square metal is neglected because it is tiny compared
with other parameters. In the case of vertical irradiation of the
Fig. 2. The equivalent circuit of PIN diodes. incident wave, Cs is calculated as [19]
 
2Dy ε0 εef f  1
OFF
Z PIN Cs = ln   (2)
π sin π
(D − L )
ZT 2Dy y y
Cs
ZP ZV Lh
]0 Z patch Lh Zd
where ε0 is the free space dielectric permittivity, and εef f is
Z inOFF the effective dielectric constant that can be calculated by [20]
ZP ZV Lh
Rs
ZT εr + 1 εr − 1  w 
OFF
Z PIN
εef f = + F (3)
2 2 h
(a) where εr is the relative permittivity, w is the width of
the
]0 microstrip line, and h is the substrate’s thickness. F w h is a
Z inON,OFF piecewise function, and it can be computed as
(
− 21
2
w 1 + 12hw + 0.041 1 − w
h ,w
h ≤ 1 . (4)
ZT Zpatch ZT F = − 1
h 12h w

2
ZP
ON
Rs Cs
ON
ZP 1+ w ,h >1
ZV
Z PIN Z PIN ZV
The resistance, Rs , is related to many factors. For a square
Lh Lh Lh
metal, it can be expressed by [18]:
 2
D
Zd Rs = Rm (5)
L
(b)
where Rm = σ1c δ , Dx = Dy = D represents the element
Fig. 3. Equivalent circuit model of RIS element in two states of PIN diodes: period, and Lx = Ly = L is the length of the square’s side.
(a) OFF and (b) ON.
δ = √σc2ωµ0 is the penetration depth of the metal. σc is the
conductivity of the metal surface. ω is the angular frequency.
structure. The square patch contributes more of the induced µ0 is the magnetic permeability of vacuum.
current in the designed RIS element than in other components. In [20], a rectangular microstrip line impedance is modeled
The ECM of the square patch has already matured [17], [18] as a parallel connection of resistor, inductor, and capacitor.
in the metasurface modeling. In our model, the influence of They represent the resistance caused by the metal’s ohmic loss
the bias via is also considered to calculate Zpatch . The vias are and the inductance and capacitance caused by the magnetic
treated as inductance, just as in [7], and linked in parallel to field and electric energy stored in the rectangular microstrip
the patch. The impedance of the T-shaped part mainly includes line, respectively. However, considering the small size of the
the impedance of the PIN diode (ZPIN ON,OFF
), the impedances microstrip line, the ohmic loss is too small compared with that
of the two microstrip lines (Z P,V
) and the impedance of via of the square patch. Therefore, it is expected that the ohmic
(Zh ). loss of the microstrip line is negligible. Thus in the equivalent
circuit model, Z P,V is modeled as a parallel circuit of an
C. Lumped Elements Parameters inductor and capacitor, expressed as:
−1 !−1
Due to the unique structure of the designed RIS element, it

P,V P,V −1

1
has almost the same reflection coefficient under the irradiation Z = jωL + (6)
jωC P,V
of TE or TM electromagnetic waves. Therefore, the lumped
element model is derived only considering the irradiation of where LP,V denotes the equivalent inductance of the mi-
the TE wave. The impedance of the square patch (Zpatch ) crostrip line, and C P,V is the equivalent capacitance of the
includes the impedance of the square metal (Zs ) and the microstrip line. The equivalent model inductance can be cal-
inductive reactance brought by the vias (Zh ). The equivalent culated by employing the microstrip transmission line theory
transmission line model of the patch suggested in [19] is re- [21]: q
ferred to in the chosen patch model. Moreover, the impedance P,V
Zc,w εP,V
ef f P,V
of a square metal should be adapted to the RIS element LP,V = l (7)
c

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 P,V
where Zc,w is the characteristic impedance of a microstrip The grounded thin dielectric substrate is modeled as an
line of width wP,V , and lP,V is the length of the microstrip inductor in the ECM. Its impedance can be denoted as [10]:
line. C P,V represents the capacitance of the entire microstrip ωµ0
Zd = j tan (kz h) (16)
line on the dielectric substrate. The value of C P,V includes kz
the static capacitance (CbP,V ) of the field at the bottom √
where kz = k0 εr is the normal propagation constant within
of the microstrip line, the static fringe capacitance (ClP,V ) √
the substrate, and k0 = ω ε0 µ0 is the free-space wave
along the length of the microstrip line, and the static fringe number.
P,V
capacitance (Cw ) along the width of the microstrip line. In [7], the vias of RIS elements are modeled as inductors
Their expressions can be denoted as [22]: in parallel with the connected patches. Consequently, vias can
wP,V lP,V be modeled as inductive lumped elements. The inductance of
CbP,V = ε0 εr (8) the hole can be expressed as [23]:
h  
! µ0 h 2c
lP,V 1 1 Lh = ln √ (17)
ClP,V = P,V P,V
− CbP,V (9) 2π πCdh εr f
2 vp,w Zc,w 2
where dh is the diameter of the via and C is Euler’s constant.
!
wP,V 1 1 D. Calculation of Complex Reflection Coefficient
P,V
Cw = P,V P,V
− CbP,V (10)
2 vp,l Zc,l 2 Calculating the reflection coefficient is based on deriving
the values of the lumped elements. Values of some lumped
P,V
where vp,w is the phase velocity of the microstrip line with elements vary with frequency. Therefore, the proposed ECM
P,V
width wP,V , and vp,l is the phase velocity of the microstrip can represent the frequency characteristics of the RIS element.
P,V
line with length l . The microstrip line’s phase velocity can At the same time, some lumped elements are related to the
be expressed as: geometric shape and size of the RIS element. Consequently,
Zc,i the proposed ECM could depict the properties of the specific
vp,i = c (11)
Z0,i geometry of the RIS element. The total input impedance of
ON,OFF
where i is w or l, Z0,w and Z0,l are the characteristic the ECM of the RIS element is shown in Fig. 3. Zin
impedance of a microstrip line of width w and length l filled can be expressed as:
−1
with air, respectively. Zc,i can be expressed as:
  −1
ON,OFF −1 ON,OFF −1
   Zin = (Zpatch ) + 2ZT + Zd
(1)
 √ ζ0
 Θi + χ(1) , hi ≤ 3.3 (18)
π 2(εr +1)
Zc,i =  −1 (12) where Zpatch is the parallel connection of the equivalent
ζ0 (2) (2) i
 2√

εr Θ i + χ , h > 3.3 impedance of the square metal and the via. Zpatch can be
  denoted as:
(1) 4h
q
2 (2) Zs Zh
where Θi = ln i + 2 + 16h
i 2 , Θi = Zpatch = (19)
Zs + Zh
(εr +1)  i

 i
εr 0.231 + 0.1592 ln 2h + 0.94 + 2h , χ(1) = where Zh is the equivalent impedance of the via. Another part
0.0823(εr −1)
0.1208
εr q − εεrr −1
+1 (0.2258), χ
(2)
= ε2 + 0.4413, and of the proposed RIS element is the T-shape. According to the
r
proposed ECM, the equivalent impedance of the T-shape can
ζ0 = µε00 is the impedance of free space. Z0,i can be derived
be expressed as:
from Zc,i . Z0,i can be computed as: h i−1
−1 −1 −1
 ZTON,OFF = ZPINON,OFF
+ (ZP ) + (Zv ) + (Zh ) .
 ζ0 Λ(1) , hi ≤ 3.3
2π i
Z0,i = ζ0  (2) −1 (13) (20)

2 Λi + 0.9033 , hi > 3.3 After calculating the total input impedance of the equivalent
  circuit, the complex reflection coefficient of the designed RIS
element can be expressed as [10]:
q
(1) 16h2 (2)
where Λi = ln 4hi + 2 + i2 , and Λi =
ON,OFF
Zin − ζ0
i i ΓON,OFF =


0.3184 ln 2h + 0.94 + 2h . ON,OFF
. (21)
Fig. 2 illustrates the equivalent circuit of the PIN diode. Zin + ζ0
ON OFF The magnitude and phase of a reflection coefficient indicate
ZPIN and ZPIN are the equivalent impedances of the PIN
diode being applied with forward and reverse bias voltages, the power attenuation and phase adjustment of a RIS element
respectively. The impedance corresponding to the two circuit on the incoming EM wave. The phase adjustment amount in
states of the PIN diode can be calculated as follows the working frequency is significant for designing the RIS
ON
phase control. Expressing the reflection coefficient of the RIS
ZPIN = RON + jωLON (14) element in a simple, efficient, and fast way can dramatically
1 save time compared with the simulation conducted with com-
OFF
ZPIN = ROFF + jωLOFF + (15) mercial software.
jωCOFF

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4
 0 200 0 200
Model-ON Model-ON
-2 Simulation-ON -2 Simulation-ON
100 Model-OFF 100 Model-OFF
Simulation-OFF Simulation-OFF

(deg)

(deg)
-4 -4
| |(dB)

| |(dB)
0 0
-6 -6
Model-ON Model-ON
Simulation-ON -100 Simulation-ON -100
-8 Model-OFF -8 Model-OFF
Simulation-OFF Simulation-OFF
-10 -200 -10 -200
11.5 12 12.5 13 11.5 12 12.5 13 11.5 12 12.5 13 11.5 12 12.5 13
Frequency(GHz) Frequency(GHz) Frequency(GHz) Frequency(GHz)
(a) (b) (a) (b)
Fig. 4. Reflection coefficients of the element with equivalent circuit model Fig. 6. Reflection coefficients of the element with equivalent circuit model
and simulated results when Lx = Ly = 5.2 mm: (a) amplitudes and (b) and simulated results when Lx = Ly = 5.5 mm: (a) amplitudes and (b)
phases.The dimensions are (in mm): Dx = Dy = 9.525, Lx = Ly = 5.2, phases. The dimensions are (in mm): Dx = Dy = 9.525, Lx = Ly = 5.5,
lP = 5.9024, lV = 0.9547, wP,V = 0.3, h2 = 1.065, h1 = h3 = 0.2104, lP = 5.9024, lV = 0.9547, wP,V = 0.3, h2 = 1.065, h1 = h3 = 0.2104,
dh = 0.3. dh = 0.3.

0 200
Model-ON 0
-2 Simulation-ON 1
100 Model-OFF
Simulation-OFF
(deg)

-4
| |(dB)

0
-6
Model-ON
Simulation-ON -100
-8 Model-OFF
Simulation-OFF
-10 -200
11.5 12 12.5 13 11.5 12 12.5 13
Frequency(GHz) Frequency(GHz)
(a) (b) (a) (b)
Fig. 5. Reflection coefficients of the element with equivalent circuit model Fig. 7. Distributions of RIS elements’ states in the array and spectral
and simulated results when Lx = Ly = 4.8 mm: (a) amplitudes and (b) efficiency in the area illuminated by the main beam: (a) RIS elements’ states
phases. The dimensions are (in mm): Dx = Dy = 9.525, Lx = Ly = 4.8, and (b) spectral efficiency.
lP = 5.9024, lV = 0.9547, wP,V = 0.3, h2 = 1.065, h1 = h3 = 0.2104,
dh = 0.3.
(22), G(fk ) = | n,m gn,m (fk )|2 . Note that the individual
P

E. Spectral Efficiency element’s on-off state is the same for all subbands.

Within the scope of an A × B rectangular area, the spectral IV. N UMERICAL R ESULTS
efficiency distribution is related to each tiny element in a RIS
The proposed RIS element’s relevant geometry and electri-
array of size N × M . For any locations in the receiving area,
cal parameters are shown in Table I. CST Microwave Studio, a
the gain contributed by the (n, m) element can be written as
commercial electromagnetic software, simulates the properties
[11]: √
gt gr D2 Fn,m |Γn,m (f )|
p of the designed RIS element. CST Microwave Studio is ex-
gn,m (f ) = t r

tensively employed for designing and simulating RIS elements
4π rn,m rn,m (22) [24]–[26]. The simulation results of the proposed RIS element
t r
−j( 2π (r +r )−∠Γ (f)) are shown in Fig. 4. The relative phase shift of the RIS element
×e λ n,m n,m n,m

in two states is within 180◦ ±20◦ in the range of 11 GHz to 12

where gt is the gain of the transmit antenna, gr is the gain
GHz. Simultaneously, their amplitude losses do not exceed 2
of the receive antenna, Fn,m is the joint normalized power
t dB. The proposed RIS element meets our design expectations.
radiation pattern, rn,m is the distance from the (n, m) element
r Fig. 4 further demonstrates the effectiveness of our proposed
to the transmit antenna, and rn,m is the distance from the
RIS element and its ECM. The reflection coefficients in each
(n, m) element to the receive antenna, and D2 is the area
state agree with the simulation results. In the proposed RIS
of an element. The spectral efficiency can be calculated as
element, the size of the square patch is deliberately designed
follows:
to achieve a shift of 180◦ ± 20◦ . A slight change will destroy
K
the phase shift requirement. To validate the practicality of our
 
1 X Pt G(fk )
ηSE = log2 1 + (23) proposed ECM, Fig. 5 and Fig. 6 exhibit the calculations of
K KkB T ∆BNF
k=1 two sizes within the feasible range. Within a predefined range,
where total operating bandwidth B is divided into K subbands the square size can be changed, and the results of the ECM
of bandwidth ∆B = B/K, fk , k = 1, ...K. K can be large, remain consistent with the simulation results. The structure
such as 256, to keep the frequency response within each of the RIS element with multiple vias and PIN diodes is
subband flat. Equal power allocation is applied across all the complex, and its reflection coefficients have many resonant
subbands. kB is Boltzmann constant, T is the thermodynamic frequencies. In the case of high frequency, it is challenging
temperature in Kelvin, Pt is transmitted power, and NF to completely characterize its physical characteristics through
is the receiver noise figure. G(fk ) is the combined power theoretical formulas and simple ECM. Therefore, there are
gain evaluated at individual subband, fk , according to Eq. some subtle differences between the results of the ECM

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5
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