SE60PWBC, SE60PWDC, SE60PWGC, SE60PWJC

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Vishay General Semiconductor
Surface-Mount ESD Capability Rectifier
FEATURES
eSMP® Series
• Very low profile - typical height of 1.3 mm Available

• Ideal for automated placement

• Oxide planar chip junction
K
• Low forward voltage drop
• ESD capability
1
• Meets MSL level 1, per J-STD-020,
2 LF maximum peak of 260 °C
SlimDPAK (TO-252AE) • AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
PIN 1 K
• Material categorization: for definitions of compliance
PIN 2 HEATSINK please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS

General purpose, power line polarity protection, in both
3D 3D
3D Models
industry and automotive applications.

MECHANICAL DATA
PRIMARY CHARACTERISTICS Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
IF(AV) 2x3A
Base P/N-M3 - halogen-free, RoHS-compliant
VRRM 100 V, 200 V, 400 V, 600 V
Base P/NHM3 - halogen-free, RoHS-compliant, and
IFSM 42 A AEC-Q101 qualified
VF at IF = 3 A (TA = 125 °C) 0.94 V
Terminals: matte tin plated leads, solderable per
TJ max. 175 °C J-STD-002 and JESD 22-B102, M3 and HM3 suffix meets
Package SlimDPAK (TO-252AE) JESD 201 class 2 whisker test
Circuit configuration Common cathode

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SE60PWBC SE60PWDC SE60PWGC SE60PWJC UNIT
Device marking code SE60PWBC SE60PWDC SE60PWGC SE60PWJC
Maximum repetitive peak reverse voltage VRRM 100 200 400 600 V
Maximum average forward rectified current per device 6
IF(AV) (1) A
(fig. 1) per diode 3
Peak forward surge current 8.3 ms single half sine-wave
42 A
superimposed on rated load IFSM
Peak forward surge current 1 ms square wave on rated load 80 A
Operating junction and storage temperature range TJ, TSTG -55 to +175 °C
Note
(1) With infinite heatsink

Revision: 16-Apr-2020 1 Document Number: 87533

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Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
IF = 1.5 A 0.94 -
TA = 25 °C
IF = 3.0 A 1.03 1.1
Maximum Instantaneous forward voltage VF (1) V
IF = 1.5 A 0.84 -
TA = 125 °C
IF = 3.0 A 0.94 1.01
TA = 25 °C - 10
Reverse current Rated VR IR (2) μA
TA = 125 °C 12 150
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1200 - ns
Typical junction capacitance 4.0 V, 1 MHz CJ 22 - pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width ≤ 40 ms

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SE60PWBC SE60PWDC SE60PWGC SE60PWJC UNIT
RθJA (1)(2) 63
Typical thermal resistance per device °C/W
RθJM (3) 2.3
Notes
(1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R
D J θJA
(2) Free air, mounted on recommended copper pad area; thermal resistance R
θJA - junction to ambient
(3) Mounted on infinite heat sink; thermal resistance R
θJM - junction-to-mount

IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS

(TA = 25 °C unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE
AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 kΩ VC H3B > 8 kV

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SE60PWJC-M3/I 0.20 I 4500 13" diameter plastic tape and reel
SE60PWJCHM3/I (1) 0.20 I 4500 13" diameter plastic tape and reel
Note
(1)
AEC-Q101 qualified

Revision: 16-Apr-2020 2 Document Number: 87533

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

7.0 1000
Average Forward Rectified Current (A)

Instantaneous Reverse Current (˩A)

TM = 160 °C, RthJM = 2.3 °C/W
6.0 TJ = 175 °C
100
TJ = 150 °C
5.0 TJ = 125 °C
10
4.0 TJ = 100 °C
TA = 25 °C, RthJA = 63 °C/W 1 TJ = 75 °C
3.0
0.1
2.0 TJ = 25 °C

1.0 0.01
TJ = - 40 °C
0 0.001
0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 100

Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics

4.0 100
D = 0.8 TJ = 25 °C
3.5 f = 1.0 MHz
Junction Capacitance (pF)

D = 0.5 Vsig = 50 mVp-p

Average Power Loss (W)

3.0
D = 0.3
2.5 D = 1.0
D = 0.2
2.0 10
D = 0.1
1.5
T
1.0

0.5
D = tp/T tp

0.0 1
0 0.5 1 1.5 2 2.5 3 3.5 0.1 1 10 100

Average Forward Current (A) Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance

100 100
Transient Thermal Impedance (°C/W)

Junction to Ambient
Instantaneous Forward Current (A)

TJ = 175 °C
10
TJ = 150 °C
10

TJ = 125 °C
1
TJ = 100 ° C

TJ = 75 °C 1
0.1
TJ = 25 °C

TJ = -40 °C
0.01 0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0.01 0.1 1 10 100

Instantaneous Forward Voltage (V) t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance

Revision: 16-Apr-2020 3 Document Number: 87533

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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 SE60PWBC, SE60PWDC, SE60PWGC, SE60PWJC
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Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SlimDPAK (TO-252AE) 0.055 (1.40)

0.047 (1.20) 0.016 (0.41)
0.249 (6.32) 0.010 (0.25)
0.239 (6.08)

0.028 (0.70)
0.012 (0.30)

0.265 (6.72)
0.255 (6.48)
0.370 (9.40)
0.339 (8.60)

0.008 (0.20)
0.000 (0.00)
0.055 (1.40)
0.039 (1.00)

0.090
NOM.
(2.29) 0.180
NOM.
(4.57)
Mounting Pad Layout

0.240
0.224 (5.70) MIN.
(6.10)
0.209 (5.30)

0.205 0.235
NOM. MIN.
(5.20) (5.97)

0.386
REF.
(9.80)

0.075
MIN.
(1.90)

0.035 (0.90) 0.090 0.055

0.028 (0.70) NOM. MIN.
(2.29) (1.40)

Revision: 16-Apr-2020 4 Document Number: 87533

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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