, Una.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960
N-Channel MOSFET Transistor IRFZ44N

FEATURES 0( 2)
• Drain Current -ID=49A@ TC=25°C
• Drain Source Voltage-
: VDSS= 55V(Min)
• Static Drain-Source On-Resistance
: RDs(on) = 0.032 Q (Max)
• Fast Switching pII GO)

fi
s<3)
y
^
*
PIN I.Gat e
DESCRIPTION 2.Dra in
-.•
1 2
• Designed for low voltage, high speed switching applications in 3.SOL rce
power supplies, converters and power motor controls, these TO-22 OC package

devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical »
and offer additional safety margin against unexpected voltage ""

transients. J-^f L
—poo
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
\. • B MOOV
••••
SYMBOL PARAMETER VALUE UNIT i H •' • ; V

T |
VDSS

VGS
Drain-Source Voltage

Gate-Source Voltage-Continuous
55

+ 20
V

V
K

f i
I
+41* D

•H G *-• »
b Drain Current-Continuous 49 A
c
i
IDM Drain Current-Single Pluse (tp=S10 u s) 160 A
mm
PD Total Dissipation @Tc=25'C 94 W DW MIN MAX
A 15.70 15.90
B 9.90 10.10
Tj Max. Operating Junction Temperature 175 'C
C 4.20 4.40
L) 0.70 0.90
Tstg Storage Temperature -55-175 •c F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
THERMAL CHARACTERISTICS K 13.20 13.40
L 1.10 1.30
SYMBOL PARAMETER MAX UNIT
Cl 2.70 2.90
R 2.50 2.70
Rth j-c Thermal Resistance, Junction to Case 1.5 "C/W S 1.29 1.31
U 6.45 6.65
Rth j-a Thermal Resistance, Junction to Ambient 62 •c/w V 8.66 8.86

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
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 N-Channel MOSFET Transistor IRFZ44N

ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGs= 0; ID= 0.25mA 55 V

VQS(th) Gate Threshold Voltage VDS= VGS; lo= 0.25mA 2 4 V

Ros(on) Drain-Source On-Resistance VGS=10V; I D =25A 0.032 Q

IGSS Gate-Body Leakage Current VGS= +20V;VDs=0 ±100 nA

VDS= 55V; VGS= 0 25

loss Zero Gate Voltage Drain Current uA
VDs= 55V; VGS= 0; Tj= 150 XT 250

VSD Forward On-Voltage ls= 25A; VGS= 0 1.3 V

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