MRF8S9200N

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Freescale Semiconductor Document Number: MRF8S9200N

Technical Data Rev. 1, 5/2010

RF Power Field Effect Transistor


N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base MRF8S9200NR3
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Gps ηD Output PAR ACPR 920--960 MHz, 58 W AVG., 28 V
Frequency (dB) (%) (dB) (dBc) SINGLE W--CDMA
LATERAL N--CHANNEL
920 MHz 19.9 37.7 6.1 --36.2
RF POWER MOSFET
940 MHz 19.9 37.1 6.1 --36.6
960 MHz 19.5 36.8 6.0 --36.0

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 300 Watts CW


Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 200 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
CASE 2021--03, STYLE 1
and Common Source S--Parameters
OM--780--2
• Internally Matched for Ease of Use PLASTIC
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Table 1. Maximum Ratings


Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +70 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 °C
Case Operating Temperature TC 150 °C
Operating Junction Temperature (1,2) TJ 225 °C

Table 2. Thermal Characteristics


Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case RθJC °C/W
Case Temperature 80°C, 58 W CW, 28 Vdc, IDQ = 1400 mA 0.30
Case Temperature 80°C, 200 W CW, 28 Vdc, IDQ = 1400 mA 0.25
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.

© Freescale Semiconductor, Inc., 2009--2010. All rights reserved. MRF8S9200NR3


RF Device Data
Freescale Semiconductor 1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)

Table 4. Moisture Sensitivity Level


Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 °C

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)


Characteristic Symbol Min Typ Max Unit

Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 10 μAdc
(VDS = 70 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 1 μAdc
(VDS = 28 Vdc, VGS = 0 Vdc)

Gate--Source Leakage Current IGSS — — 1 μAdc


(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics
Gate Threshold Voltage VGS(th) 1.5 2.3 3 Vdc
(VDS = 10 Vdc, ID = 400 μAdc)

Gate Quiescent Voltage VGS(Q) 2.3 3 3.8 Vdc


(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)

Drain--Source On--Voltage VDS(on) 0.1 0.2 0.3 Vdc


(VGS = 10 Vdc, ID = 3.3 Adc)

Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg., f = 940 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain Gps 18 19.9 21 dB
Drain Efficiency ηD 34 37.1 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.8 6.1 — dB
Adjacent Channel Power Ratio ACPR — --36.6 --35 dBc
Input Return Loss IRL — --22 --9 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Gps ηD Output PAR ACPR IRL
Frequency (dB) (%) (dB) (dBc) (dB)
920 MHz 19.9 37.7 6.1 --36.2 --14
940 MHz 19.9 37.1 6.1 --36.6 --22
960 MHz 19.5 36.8 6.0 --36.0 --15
1. Part internally matched both on input and output.
(continued)

MRF8S9200NR3
RF Device Data
2 Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB — 200 — W
IMD Symmetry @ 160 W PEP, Pout where IMD Third Order IMDsym MHz
Intermodulation  30 dBc — 15 —
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point VBWres — 45 — MHz
(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 40 MHz Bandwidth @ Pout = 58 W Avg. GF — 0.7 — dB


Gain Variation over Temperature ∆G — 0.012 — dB/°C
(--30°C to +85°C)
Output Power Variation over Temperature ∆P1dB — 0.001 — dBm/°C
(--30°C to +85°C)

MRF8S9200NR3
RF Device Data
Freescale Semiconductor 3
C29
R1
B1
VGS

C4 C22
C25 C26
C5 C21
C31 VDS

C6 C7 R2 C11

C1 C10 C19

C12

CUT OUT AREA


C2 C15 C16 C17 C18 C20
C3 C14
C13

C8 C9

C32 C27 C28


C23 C24

C30

MRF8S9200N
Rev 0

Figure 1. MRF8S9200NR3 Test Circuit Component Layout

Table 6. MRF8S9200NR3 Test Circuit Component Designations and Values


Part Description Part Number Manufacturer
B1 Ferrite Beads, Short 2743019447 Fair--Rite
C1, C5, C19, C21, C22, 39 pF Chip Capacitors ATC100B390JT500XT ATC
C23, C24
C2 2 pF Chip Capacitor ATC100B2R0BT500XT ATC
C3 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC
C4 2.2 μF Chip Capacitor C1825C225J5RAC--TU Kemet
C6, C7, C8, C9 3.3 pF Chip Capacitors ATC100B3R3CT500XT ATC
C10, C12 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C11, C13 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC
C14, C20 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC
C15, C17 0.5 pF Chip Capacitors ATC100B0R5BT500XT ATC
C16 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC
C18 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC
C25, C26, C27, C28 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C29, C30 470 μF, Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
C31 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap.
C32 10 pF Chip Capacitor ATC100B100JT500XT ATC
R1 3.3 Ω, 1/2 W Chip Resistor P3.3VCT--ND Panasonic
R2 0 Ω, 3.5 A Chip Resistor CRCW12060000Z0EA Vishay
PCB 0.030″, εr = 3.5 RF--35 Taconic

MRF8S9200NR3
RF Device Data
4 Freescale Semiconductor
TYPICAL CHARACTERISTICS

21 44
VDD = 28 Vdc, Pout = 58 W (Avg.)

EFFICIENCY (%)
20.5 IDQ = 1400 mA, Single--Carrier W--CDMA 42

ηD, DRAIN
ηD 3.84 MHz Channel Bandwidth
20 40

Gps, POWER GAIN (dB)


19.5 Gps 38
19 36
Input Signal PAR = 7.5 dB

IRL, INPUT RETURN LOSS (dB)


18.5 IRL @ 0.01% Probability on CCDF --30 --5 0
18 --32 --10 --0.5

ACPR (dBc)

PARC (dB)
17.5 --34 --15 --1
ACPR
17 --36 --20 --1.5
16.5 --38 --25 --2
PARC
16 --40 --30 --2.5
800 825 850 875 900 925 950 975 1000
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 58 Watts Avg.

--10
IMD, INTERMODULATION DISTORTION (dBc)

VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA


Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 940 MHz

IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
IM7--L
--50
IM7--U
--60
1 10 100
TWO--TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing

20 1 55 --20

Gps
19.5 0 50 --25
OUTPUT COMPRESSION AT 0.01%

ηD, DRAIN EFFICIENCY (%)


PROBABILITY ON CCDF (dB)

PARC
Gps, POWER GAIN (dB)

19 --1 ηD --30
45
ACPR
ACPR (dBc)

--1 dB = 49.04 W
18.5 --2 40 --35
--3 dB = 95.95 W
18 --3 --2 dB = 69.69 W 35 --40

17.5 --4 VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz 30 --45
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
17 --5 25 --50
30 50 70 90 110 130
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power

MRF8S9200NR3
RF Device Data
Freescale Semiconductor 5
TYPICAL CHARACTERISTICS

24 100 --20
VDD = 28 Vdc, IDQ = 1400 mA, Single--Carrier 960 MHz
23 W--CDMA, 3.84 MHz Channel Bandwidth 90 --24
22 Input Signal PAR = 7.5 dB @ 0.01% 940 MHz 920 MHz 80 --28
Probability on CCDF

ηD, DRAIN EFFICIENCY (%)


Gps, POWER GAIN (dB)
21 960 MHz 70 --32
Gps f = 920 MHz
20 60 --36

ACPR (dBc)
19 960 MHz 50 --40
940 MHz 920 MHz
18 40 --44
17 30 --48
16 ACPR 20 --52
ηD
15 10 --56
14 0 --60
1 10 100 300
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power

25 10

20 5
Gain
15 0

10 --5
GAIN (dB)

IRL (dB)
5 --10
IRL
0 --15

--5 --20
VDD = 28 Vdc
--10 Pin = 0 dBm --25
IDQ = 1400 mA
--15 --30
550 650 750 850 950 1050 1150 1250 1350
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response

W--CDMA TEST SIGNAL

100 10
0
10
--10
3.84 MHz
1 --20 Channel BW
PROBABILITY (%)

Input Signal --30


0.1
--40
(dB)

0.01 --50
W--CDMA. ACPR Measured in 3.84 MHz --60 --ACPR in 3.84 MHz +ACPR in 3.84 MHz
0.001 Channel Bandwidth @ ±5 MHz Offset. Integrated BW Integrated BW
Input Signal PAR = 7.5 dB @ 0.01% --70
Probability on CCDF --80
0.0001
0 1 2 3 4 5 6 7 8 9 10
--90
PEAK--TO--AVERAGE (dB)
--100
Figure 7. CCDF W--CDMA IQ Magnitude --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9
Clipping, Single--Carrier Test Signal f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9200NR3
RF Device Data
6 Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg.
f Zsource Zload
MHz Ω Ω
820 1.16 -- j2.85 2.29 -- j2.08
840 1.09 -- j2.63 2.11 -- j1.95
860 1.04 -- j2.45 1.94 -- j1.81
880 0.98 -- j2.27 1.76 -- j1.68
900 0.93 -- j2.08 1.59 -- j1.51
920 0.88 -- j1.90 1.42 -- j1.33
940 0.83 -- j1.72 1.28 -- j1.13
960 0.79 -- j1.55 1.14 -- j0.93
980 0.76 -- j1.39 1.02 -- j0.73
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output


Matching Under Matching
Network Test Network

Z Z
source load

Figure 9. Series Equivalent Source and Load Impedance

MRF8S9200NR3
RF Device Data
Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS

VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
59
f = 960 MHz
58 f = 940 MHz
57 f = 920 MHz

Pout, OUTPUT POWER (dBm)


56
Actual
55
Ideal
54
53 f = 920 MHz f = 960 MHz

52
f = 940 MHz
51
50
49
30 31 32 33 34 35 36 37 38 39 40
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V

P1dB P3dB
f
(MHz) Watts dBm Watts dBm
920 267 54.3 332 55.2
940 263 54.2 327 55.1
960 261 54.2 327 55.2

Test Impedances per Compression Level


f Zsource Zload
(MHz) Ω Ω
920 P1dB 0.70 -- j1.66 0.82 -- j1.52
940 P1dB 0.68 -- j1.85 0.73 -- j1.60
960 P1dB 0.87 -- j1.99 0.76 -- j1.70

Figure 10. Pulsed CW Output Power


versus Input Power @ 28 V

MRF8S9200NR3
RF Device Data
8 Freescale Semiconductor
PACKAGE DIMENSIONS

MRF8S9200NR3
RF Device Data
Freescale Semiconductor 9
MRF8S9200NR3
RF Device Data
10 Freescale Semiconductor
MRF8S9200NR3
RF Device Data
Freescale Semiconductor 11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE

Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Aug. 2009 • Initial Release of Data Sheet

1 May 2010 • Revised VSWR statement to correct output power from 200 Watts CW to 300 Watts CW, p. 1
• Replaced Case Outline 2021--01, Issue O, with 2021--03, Issue B, p. 1, 9--11. Changed “Drain Lead” to
“Pin 1” and “Gate Lead” to “Pin 2” on Sheet 1. Corrected “A2” to “A1” in Note 7, and changed dimension
A1 from 0.061″--0.063″ (1.55--1.60 mm) to 0.059″--0.065″ (1.50--1.65 mm) on Sheet 3. Added 4 exposed
source tabs at dimension e1 on Sheets 1 and 2. Added dimension e1 0.721″--0.729″ (18.31--18.52 mm) in
the table, revised D1 minimum dimension from 0.730″ (18.54 mm) to 0.720″ (18.29 mm), revised dimension
E2 from 0.312″ (7.92 mm) to 0.306″ (7.77 mm), and revised wording of Note 8 on Sheet 3.
• Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2

MRF8S9200NR3
RF Device Data
12 Freescale Semiconductor
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MRF8S9200NR3
RF Device
Document Data MRF8S9200N
Number:
Rev. 1, 5/2010
Freescale Semiconductor 13

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