MRF8S9200N
MRF8S9200N
MRF8S9200N
Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 10 μAdc
(VDS = 70 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 1 μAdc
(VDS = 28 Vdc, VGS = 0 Vdc)
On Characteristics
Gate Threshold Voltage VGS(th) 1.5 2.3 3 Vdc
(VDS = 10 Vdc, ID = 400 μAdc)
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg., f = 940 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain Gps 18 19.9 21 dB
Drain Efficiency ηD 34 37.1 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.8 6.1 — dB
Adjacent Channel Power Ratio ACPR — --36.6 --35 dBc
Input Return Loss IRL — --22 --9 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Gps ηD Output PAR ACPR IRL
Frequency (dB) (%) (dB) (dBc) (dB)
920 MHz 19.9 37.7 6.1 --36.2 --14
940 MHz 19.9 37.1 6.1 --36.6 --22
960 MHz 19.5 36.8 6.0 --36.0 --15
1. Part internally matched both on input and output.
(continued)
MRF8S9200NR3
RF Device Data
2 Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB — 200 — W
IMD Symmetry @ 160 W PEP, Pout where IMD Third Order IMDsym MHz
Intermodulation 30 dBc — 15 —
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point VBWres — 45 — MHz
(IMD Third Order Intermodulation Inflection Point)
MRF8S9200NR3
RF Device Data
Freescale Semiconductor 3
C29
R1
B1
VGS
C4 C22
C25 C26
C5 C21
C31 VDS
C6 C7 R2 C11
C1 C10 C19
C12
C8 C9
C30
MRF8S9200N
Rev 0
MRF8S9200NR3
RF Device Data
4 Freescale Semiconductor
TYPICAL CHARACTERISTICS
21 44
VDD = 28 Vdc, Pout = 58 W (Avg.)
EFFICIENCY (%)
20.5 IDQ = 1400 mA, Single--Carrier W--CDMA 42
ηD, DRAIN
ηD 3.84 MHz Channel Bandwidth
20 40
ACPR (dBc)
PARC (dB)
17.5 --34 --15 --1
ACPR
17 --36 --20 --1.5
16.5 --38 --25 --2
PARC
16 --40 --30 --2.5
800 825 850 875 900 925 950 975 1000
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 58 Watts Avg.
--10
IMD, INTERMODULATION DISTORTION (dBc)
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
IM7--L
--50
IM7--U
--60
1 10 100
TWO--TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
20 1 55 --20
Gps
19.5 0 50 --25
OUTPUT COMPRESSION AT 0.01%
PARC
Gps, POWER GAIN (dB)
19 --1 ηD --30
45
ACPR
ACPR (dBc)
--1 dB = 49.04 W
18.5 --2 40 --35
--3 dB = 95.95 W
18 --3 --2 dB = 69.69 W 35 --40
17.5 --4 VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz 30 --45
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
17 --5 25 --50
30 50 70 90 110 130
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S9200NR3
RF Device Data
Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
24 100 --20
VDD = 28 Vdc, IDQ = 1400 mA, Single--Carrier 960 MHz
23 W--CDMA, 3.84 MHz Channel Bandwidth 90 --24
22 Input Signal PAR = 7.5 dB @ 0.01% 940 MHz 920 MHz 80 --28
Probability on CCDF
ACPR (dBc)
19 960 MHz 50 --40
940 MHz 920 MHz
18 40 --44
17 30 --48
16 ACPR 20 --52
ηD
15 10 --56
14 0 --60
1 10 100 300
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
25 10
20 5
Gain
15 0
10 --5
GAIN (dB)
IRL (dB)
5 --10
IRL
0 --15
--5 --20
VDD = 28 Vdc
--10 Pin = 0 dBm --25
IDQ = 1400 mA
--15 --30
550 650 750 850 950 1050 1150 1250 1350
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
100 10
0
10
--10
3.84 MHz
1 --20 Channel BW
PROBABILITY (%)
0.01 --50
W--CDMA. ACPR Measured in 3.84 MHz --60 --ACPR in 3.84 MHz +ACPR in 3.84 MHz
0.001 Channel Bandwidth @ ±5 MHz Offset. Integrated BW Integrated BW
Input Signal PAR = 7.5 dB @ 0.01% --70
Probability on CCDF --80
0.0001
0 1 2 3 4 5 6 7 8 9 10
--90
PEAK--TO--AVERAGE (dB)
--100
Figure 7. CCDF W--CDMA IQ Magnitude --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9
Clipping, Single--Carrier Test Signal f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9200NR3
RF Device Data
6 Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg.
f Zsource Zload
MHz Ω Ω
820 1.16 -- j2.85 2.29 -- j2.08
840 1.09 -- j2.63 2.11 -- j1.95
860 1.04 -- j2.45 1.94 -- j1.81
880 0.98 -- j2.27 1.76 -- j1.68
900 0.93 -- j2.08 1.59 -- j1.51
920 0.88 -- j1.90 1.42 -- j1.33
940 0.83 -- j1.72 1.28 -- j1.13
960 0.79 -- j1.55 1.14 -- j0.93
980 0.76 -- j1.39 1.02 -- j0.73
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Z Z
source load
MRF8S9200NR3
RF Device Data
Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
59
f = 960 MHz
58 f = 940 MHz
57 f = 920 MHz
52
f = 940 MHz
51
50
49
30 31 32 33 34 35 36 37 38 39 40
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB P3dB
f
(MHz) Watts dBm Watts dBm
920 267 54.3 332 55.2
940 263 54.2 327 55.1
960 261 54.2 327 55.2
MRF8S9200NR3
RF Device Data
8 Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S9200NR3
RF Device Data
Freescale Semiconductor 9
MRF8S9200NR3
RF Device Data
10 Freescale Semiconductor
MRF8S9200NR3
RF Device Data
Freescale Semiconductor 11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
1 May 2010 • Revised VSWR statement to correct output power from 200 Watts CW to 300 Watts CW, p. 1
• Replaced Case Outline 2021--01, Issue O, with 2021--03, Issue B, p. 1, 9--11. Changed “Drain Lead” to
“Pin 1” and “Gate Lead” to “Pin 2” on Sheet 1. Corrected “A2” to “A1” in Note 7, and changed dimension
A1 from 0.061″--0.063″ (1.55--1.60 mm) to 0.059″--0.065″ (1.50--1.65 mm) on Sheet 3. Added 4 exposed
source tabs at dimension e1 on Sheets 1 and 2. Added dimension e1 0.721″--0.729″ (18.31--18.52 mm) in
the table, revised D1 minimum dimension from 0.730″ (18.54 mm) to 0.720″ (18.29 mm), revised dimension
E2 from 0.312″ (7.92 mm) to 0.306″ (7.77 mm), and revised wording of Note 8 on Sheet 3.
• Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2
MRF8S9200NR3
RF Device Data
12 Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
MRF8S9200NR3
RF Device
Document Data MRF8S9200N
Number:
Rev. 1, 5/2010
Freescale Semiconductor 13