Unisonic Technologies Co., LTD: 300m Amps, 60 Volts N-Channel Enhancement Mode Mosfet

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UNISONIC TECHNOLOGIES CO.

, LTD
2N7002K Preliminary Power MOSFET

300m Amps, 60 Volts


N-CHANNEL ENHANCEMENT
MODE MOSFET

„ DESCRIPTION
The UTC 2N7002K uses advanced technology to provide
excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in
PWM applications.
„ FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL
3.Drain

2.Gate

1.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3 4 5 6
2N7002KL-AE2-R 2N7002KG-AE2-R SOT-23-3 S G D - - - Tape Reel

„ MARKING

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Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-541.a
2N7002K Preliminary Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous 300
Drain Current ID mA
Pulse(Note 2) 800
Power Dissipation 350 mW
PD
Derating above TA=25°C 2.8 mW/°C
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C)


PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10µA 60 V
Drain-Source Leakage Current IDSS VDS=60V, VGS=0V 1.0 µA
Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ±10 µA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=10V, ID=1mA 1.0 1.85 2.5 V
VGS=10V, ID=0.5A 2
Static Drain-Source On-Resistance (Note) RDS(ON) Ω
VGS=4.5V, ID=200mA 4
DYNAMIC PARAMETERS
Input Capacitance CISS 25 50 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1.0MHz 10 25 pF
Reverse Transfer Capacitance CRSS 3.0 5.0 pF
SWITCHING PARAMETERS
Turn-ON Delay Time tD(ON) ID=0.2 A, VDD=30V, VGS=10V, 12 20 ns
Turn-OFF Delay Time tD(OFF) RL=150Ω, RG=10Ω 20 30 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS=0V, Is=115mA (Note ) 0.88 1.5 V
Maximum Pulsed Drain-Source Diode
ISM 0.8 A
Forward Current
Maximum Continuous Drain-Source Diode
Is 115 mA
Forward Current
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width≦300μs, Duty cycle≦1%

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www.unisonic.com.tw QW-R502-541.a
2N7002K Preliminary Power MOSFET
„ TEST CIRCUITS AND WAVEFORMS

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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