IRLML2246PbF-1

HEXFET® Power MOSFET

VDS -20 V
RDS(on) max G 1
135 mΩ
(@VGS = -4.5V)
Qg (typical) 2.9 nC 3 D

ID
-2.6 A S 2
(@TA = 25°C) Micro3TM (SOT-23)
IRLML2246TRPbF-1

Features Benefits
Industry-standard pinout SOT-23 Package ⇒ Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant, Halogen-Free Environmentally Friendlier
MSL1, Industrial qualification Increased Reliability

Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRLML2246TRPbF-1 Micro3™ (SOT-23) Tape and Reel 3000 IRLML2246TRPbF-1

Absolute Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -2.6
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.1 A
IDM Pulsed Drain Current -11
PD @TA = 25°C Maximum Power Dissipation 1.3
W
PD @TA = 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 W/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJA Junction-to-Ambient e ––– 100
°C/W
RθJA Junction-to-Ambient (t<10s) f ––– 99

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Electric Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 9.5 ––– mV/°C Reference to 25°C, ID = -1mA
––– 90 135 VGS = -4.5V, ID = -2.6A d
RDS(on) Static Drain-to-Source On-Resistance
––– 157 236
mΩ
VGS = -2.5V, ID = -2.1A d
VGS(th) Gate Threshold Voltage -0.4 ––– -1.1 V VDS = VGS, ID = -10μA
IDSS ––– ––– -1.0 VDS = -16V, VGS = 0V
Drain-to-Source Leakage Current μA
––– ––– -150 VDS = -16V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
RG Internal Gate Resistance ––– 16 ––– Ω
gfs Forward Transconductance 3.4 ––– ––– S VDS = -10V, ID = -2.6A
Qg Total Gate Charge ––– 2.9 ––– ID = -2.6A
Qgs Gate-to-Source Charge ––– 0.52 ––– nC VDS =-10V
Qgd Gate-to-Drain ("Miller") Charge ––– 1.2 ––– VGS = -4.5V d
td(on) Turn-On Delay Time ––– 5.3 ––– VDD =-10V d
tr Rise Time ––– 7.7 ––– ID = -1.0A
ns
td(off) Turn-Off Delay Time ––– 26 ––– RG = 6.8Ω
tf Fall Time ––– 16 ––– VGS = -4.5V
Ciss Input Capacitance ––– 220 ––– VGS = 0V
Coss Output Capacitance ––– 70 ––– pF VDS = -16V
Crss Reverse Transfer Capacitance ––– 48 ––– ƒ = 1.0KHz

Source - Drain Ratings and Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
––– ––– -1.3
D

(Body Diode) showing the

A
ISM Pulsed Source Current integral reverse G

(Body Diode) c ––– ––– -11

p-n junction diode.
S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.6A, VGS = 0V d
trr Reverse Recovery Time ––– 17 26 ns TJ = 25°C, VR = -15V, IF=-2.6A
Qrr Reverse Recovery Charge ––– 6.2 9.3 nC di/dt = 100A/μs d

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400μs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board.
„ Refer to application note #AN-994.

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100 100
VGS VGS
TOP -10V TOP -10V
-4.5V -4.5V
-3.0V -3.0V

-ID, Drain-to-Source Current (A)

-ID, Drain-to-Source Current (A)

-2.5V -2.5V
-2.3V -2.3V
-2.0V -2.0V
10 -1.8V 10 -1.8V
BOTTOM -1.5V BOTTOM -1.5V

1 1
-1.5V
-1.5V
≤60μs PULSE WIDTH ≤60μs PULSE WIDTH
Tj = 25°C Tj = 150°C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
-V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 1.6
ID = -2.6A
RDS(on) , Drain-to-Source On Resistance

VGS = -4.5V
-I D, Drain-to-Source Current (A)

1.4

10
1.2
(Normalized)

1.0
T J = 150°C
1 T J = 25°C

0.8
VDS = -15V
≤60μs PULSE WIDTH
0.1 0.6
0.5 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-V GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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10000 14.0
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED ID= -2.6A
C rss = C gd 12.0

-V GS, Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS= -16V
10.0 VDS= -10V
C, Capacitance (pF)

1000
VDS= -4.0V
8.0
Ciss
Coss 6.0
Crss
100
4.0

2.0

10 0.0
1 10 100 0 1 2 3 4 5 6 7 8
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100

OPERATION IN THIS AREA

-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)

LIMITED BY R DS(on)
10 10

1msec
T J = 150°C 100μsec
10msec

1 T J = 25°C 1

T A = 25°C
Tj = 150°C
VGS = 0V
Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 0.10 1.0 10 100
-VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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RD
V DS
3.0
V GS
D.U.T.
2.5 RG
-
+ VDD
-I D, Drain Current (A)

2.0
-VGS
1.5 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

1.0
Fig 10a. Switching Time Test Circuit
0.5 td(on) tr t d(off) tf
VGS
0.0 10%
25 50 75 100 125 150
T A , Ambient Temperature (°C)

Fig 9. Maximum Drain Current vs. 90%

Ambient Temperature
VDS

Fig 10b. Switching Time Waveforms

1000
Thermal Response ( Z thJA ) °C/W

100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01

0.1

Notes:
0.01 SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + T A
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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300 1200

RDS(on), Drain-to -Source On Resistance ( mΩ)

RDS(on), Drain-to -Source On Resistance (m Ω)

ID = -2.6A

1000
250
Vgs = -2.5V

800
200

600
150
400

100 T J = 125°C Vgs = -4.5V

200
T J = 25°C

50 0
1 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 8 10 12 14 16
-I D, Drain Current (A)
-V GS, Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance vs. Fig 13. Typical On-Resistance vs.
Gate Voltage Drain Current

Id
Vds

Vgs
L
VCC
DUT
0
1K
SS
20K
Vgs(th)

Qgodr Qgd Qgs2 Qgs1

Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit
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1.2 1000
-V GS(th), Gate threshold Voltage (V)

1.0
800

Single Pulse Power (W)

0.8
600

0.6 ID = -10μA
ID = -250μA 400
0.4

200
0.2

0.0 0
-75 -50 -25 0 25 50 75 100 125 150 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
T J , Temperature ( °C ) Time (sec)

Fig 15. Typical Threshold Voltage vs. Fig 16. Typical Power vs. Time
Junction Temperature

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Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
S
Y DIMENS IONS
DIMENSIONS
Y
M M
MILLIMET ERS INCHES
B MIL LIMET ERS INCHES
6 O
L MIN MAX MIN MAX B
D 5
A 0.89 1.12 .036 .044 O
A1
A2
0.01
0.88
0.10
1.02
.0004
.035
.0039
.040
L MIN MAX MIN MAX
b 0.30 0.50 .0119 .0196
6
E1
3
E ccc C B A D
c 0.08
2.80
0.20
3.04
.0032
.111
.0078
.119
A 0.89 1.12 .036 .044
E 2.10 2.64 .083 .103
A1 0.01 0.10 .0004 .0039
1 2
E1 1.20 1.40 .048 .055
e 0.95 BSC .0375 BSC

A2 0.88 1.02 .035 .040

e1 1.90 BSC .075 BSC
5 B
e L 0.40 0.60 .0158 .0236
L1 0.25 BSC .0118 BSC
e1
L2
0
0.54 RE F
0° 8° 0°
.021 REF
8° b 0.30 0.50 .0119 .0196
aaa 0.10 .004

L2
bbb
ccc
0.20
0.15
.008
.006
c 0.08 0.20 .0032 .0078
4 H
D 2.80 3.04 .111 .119
A A2
L1
E 2.10 2.64 .083 .103
A1 3X b aaa C
bbb C B A 3 SU RF
0
E1 1.20 1.40 .048 .055
e
7 3X L
0.95 BS C .0375 BSC
RECOMMENDED FOOT PR INT LEAD AS SIGNMENT
e1 1.90 BS C .075 BS C
1. GATE L 0.40 0.60 .0158 .0236
2. S OURCE
3X
0.972
[.038]
3. DRAIN
L1 0.25 BS C .0118 BSC
2.742
[.1079] L2 0.54 REF .021 REF
NOT ES
0 0° 8° 0° 8°
3X
0.802
1. DIMENS IONING AND T OLE RANCING PER AS ME Y14.5M-1994. aaa 0.10 .004
0.95
[.031] 2. DIMENS IONS ARE S HOWN IN MILLIMET E RS [INCHES ]
[.0375] 3. CONT R OLLING DIME NS ION: MIL LIME T E R. bbb 0.20 .008
1.90 4 DAT UM PLANE H IS L OCAT ED AT T HE MOL D PART ING LINE.
[.075]
5 DAT UM A AND B T O BE DET ER MINE D AT DAT UM PLANE H. ccc 0.15 .006
6 DIMENS IONS D AND E1 ARE ME AS URE D AT DAT UM PLANE H.
DIME NS IONS DOES NOT INCLUDE MOLD PROT RUS IONS OR
INT ER LEAD F LAS H. MOLD PROT RUS ION OR INT E RLE AD F L AS H
S HALL NOT E XCE ED 0.25 MM [.010 INCH] PE R S IDE.
7 DIMENS ION L IS T HE LE AD LE NGT H F OR S OLDERING T O A S UBS T RAT E.
8. OUT L INE CONF ORMS T O JEDE C OUT LINE T O-236AB.

Micro3 (SOT-23 / TO-236AB) Part Marking Information

W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR

DATE CODE
PART NUMBER LEAD FREE WORK
YEAR Y WEEK W
2011 2001 1 01 A
INDUS TRIAL VERS ION 2012 2002 2 02 B
2013 2003 3 03 C
2014 2004 4 04 D
Cu WIRE LOT CODE 2015 2005 5
HALOGEN FREE
2016 2006 6
X = PART NUMBER CODE REFERENCE: 2017 2007 7
A = IRLML2402 S = IRLML6244 2018 2008 8
2019 2009 9
B = IRLML2803 T = IRLML6246
2020 2010 0 24 X
C = IRLML6302 U = IRLML6344 25 Y
D = IRLML5103 V = IRLML6346 26 Z
E = IRLML6402 W = IRFML8244
F = IRLML6401 X = IRLML2244 W = (27-52) IF PRECEDED BY A LETTER
G = IRLML2502 Y = IRLML2246 WORK
H = IRLML5203 Z = IRFML9244 YEAR Y WEEK W
I = IRLML0030 2011 2001 A 27 A
J = IRLML2030 2012 2002 B 28 B
K = IRLML0100 2013 2003 C 29 C
2014 2004 D 30 D
L = IRLML0060
2015 2005 E
M = IRLML0040 2016 2006 F
N = IRLML2060 2017 2007 G
P = IRLML9301 2018 2008 H
R = IRLML9303 2019 2009 J
2020 2010 K 50 X
Note: A line above the work week 51 Y
(as s hown here) indicates Lead - Free. 52 Z

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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 IRLML2246PbF-1
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)

2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )

1.95 ( .077 ) 1.5 ( .060 )
1.85 ( .072 ) 1.12 ( .045 )
4.1 ( .161 )
3.9 ( .154 ) 1.65 ( .065 )

TR 3.55 ( .139 ) 8.3 ( .326 )

3.45 ( .136 )
7.9 ( .312 )

FEED DIRECTION 4.1 ( .161 )

3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )
0.9 ( .036 ) 0.25 ( .010 )

178.00
( 7.008 )
MAX.

9.90 ( .390 )
8.40 ( .331 )

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

†
Qualification information
Industrial
Qualification level ††
(per JE DEC JE S D47F guidelines)
MS L1
Moisture Sensitivity Level Micro3™ (SOT-23) ††
(per JE DE C J-S TD-020D )
RoHS compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

Revision History
Date Comment
10/28/2014 • Updated partmarking to reflect Industrial partmarking on page 8.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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