Diode

Diode: A diode is a type of semiconductor device that functions like a one-way switch
for electrical current. It permits current to flow freely in one direction while significantly
hindering the flow of current in the reverse direction.

Figure: Diode

Some keywords related to diodes:

Doping: The silicon is doped with impurities to create two regions: a p-type region and
an n-type region.

P-Type Region: Created by doping silicon with elements such as boron, which have
fewer electrons, resulting in a surplus of holes (positive charge carriers).

Figure 2: P-type and N-type region

N-Type Region: Created by doping silicon with elements such as phosphorus, which
have extra electrons, resulting in a surplus of electrons (negative charge carriers).

PN Junction: The p-type and n-type semiconductors are joined together to form a PN
junction. At this junction, electrons from the n-type material and holes from the p-type
material combine, creating a depletion region where no charge carriers are present.
 Figure 3: P-N Junction

Depletion Region: The depletion layer in a diode is a crucial region around the junction
of the p-type and n-type semiconductor materials where no free charge carriers are
present. It forms when electrons from the n-type region and holes from the p-type region
move towards each other and combine, creating a zone devoid of free-moving electrons
and holes. This region is characterized by immobile ions, resulting in an electric field
that acts as a barrier to charge carrier movement. This barrier is essential for the diode's
functionality, as it prevents current flow in reverse bias while allowing current to flow in
forward bias by narrowing the depletion layer. Thus, the depletion layer enables the
diode to control the direction of current flow effectively.

Figure 4: Depletion region

Construction of a Diode:
The depletion layer in a diode is a crucial region around the junction of the p-type and
n-type semiconductor materials where no free charge carriers are present. It forms
when electrons from the n-type region and holes from the p-type region move towards
each other and combine, creating a zone devoid of free-moving electrons and holes.
This region is characterized by immobile ions, resulting in an electric field that acts as a
barrier to charge carrier movement. This barrier is essential for the diode's functionality,
as it prevents current flow in reverse bias while allowing current to flow in forward bias
by narrowing the depletion layer. Thus, the depletion layer enables the diode to control
the direction of current flow effectively.

Biasing of a Diode:

Biasing a diode refers to applying an external voltage to it, which determines how the
diode conducts current. There are two types of biasing: forward bias and reverse bias.

1. Forward Bias: In forward bias, a positive voltage is applied to the p-type side
(anode) and a negative voltage to the n-type side (cathode) of the diode. This
reduces the width of the depletion layer at the junction, allowing current to flow
easily through the diode. Essentially, the diode acts like a closed switch,
permitting current to pass through.

Figure 5: Forward and Reverse Biasing of Diode

2. Reverse Bias: In reverse bias, the polarity is reversed, with a positive voltage on
the n-type side (cathode) and a negative voltage on the p-type side (anode). This
increases the width of the depletion layer, preventing current from flowing
through the diode. The diode acts like an open switch, blocking current except for
a tiny leakage current.

Leakage current:

When a diode is reverse biased, meaning the voltage applied to the diode makes the
p-type region more negative than the n-type region (or vice versa), ideally, no significant
current should flow through the diode. However, in reality, there is always a very small
amount of current that flows through the diode in the reverse direction. This small
current is called leakage current.
Biasing voltage:

Biasing voltage is the external voltage applied to a diode to control its operation,
determining whether it allows current to flow or not. It's needed to make the diode
function correctly in various electronic circuits.

In forward bias, a positive voltage is applied to the p-type (anode) and a negative
voltage to the n-type (cathode). This reduces the depletion layer's width, allowing
current to flow through the diode. Silicon diodes typically need about 0.7 volts (built in
potential), while germanium diodes need about 0.3 volts (built in potential) to conduct.
Forward bias is used in applications like rectifiers, which convert AC to DC.

In reverse bias, the voltage is applied in the opposite direction, with a positive voltage
on the n-type (cathode) and a negative voltage on the p-type (anode). This increases
the depletion layer's width, preventing current from flowing. Reverse bias is used to
block current, protect circuits from voltage spikes, and in voltage regulation.

Biasing voltage is essential for controlling whether the diode conducts or blocks current,
making it crucial for the diode's role in various electronic devices.

V-I Characteristics of P-N junction Diode:

When the P-N junction diode is in forward bias condition, the p-type is connected to the
positive terminal while the n-type is connected to the negative terminal of the external
voltage. When the diode is arranged in this manner, there is a reduction in the potential
barrier. For silicone diodes, when the voltage is 0.7 V and for germanium diodes, when
the voltage is 0.3 V, the potential barriers decrease, and there is a flow of current.

When the diode is in forward bias, the current increases slowly, and the curve obtained
is non-linear as the voltage applied to the diode overcomes the potential barrier. Once
the diode overcomes the potential barrier, the diode behaves normally, and the curve
rises sharply as the external voltage increases, and the curve obtained is linear.

When the P-N junction diode is in negative bias condition, the p-type is connected to the
negative terminal while the n-type is connected to the positive terminal of the external
voltage. This results in an increase in the potential barrier. Reverse saturation current
flows in the beginning as minority carriers are present in the junction.

When the applied voltage is increased, the minority charges will have increased kinetic
energy which affects the majority charges. This is the stage when the diode breaks
down. This may also destroy the diode.

Knee Voltage: The knee voltage, also known as the cut-in voltage or threshold voltage,
is the forward voltage at which a diode begins to conduct significantly and the current
through the diode starts to increase rapidly.

Leakage Current: Leakage current is the small amount of current that flows through a
diode or other semiconductor device even when it is reverse-biased, meaning the
device is in a non-conducting state.

Breakdown voltage: Breakdown voltage is the reverse voltage at which a diode or

other semiconductor device begins to conduct a significant amount of current, leading to
a breakdown of its insulating properties. This occurs when the reverse voltage applied
across the diode exceeds a certain threshold, causing a dramatic increase in reverse
current.
Diode logic Gates: Follow the class Lectures.