MOUNT SAINT ANN HIGH SCHOOL

NAME - Manjiri Yogesh

Kolhapurkar
CLASS - 12TH
DIVISION - A
ROLL.NO - 04
SUBJECT - PHYSICS
TEACHER’S NAME- VAIJAYANTEE DESHPANDE
 Mt. St. Ann High school,
Talegaon Dabhade Pune -410507
CBSE Affiliation number: 1130372

Practical / Project File (Year :2024-2025)

CERTIFICATE
Class: XII –Science Year: 2024-2025

This is to certify that the project/Practical entered in this file is the work of

Name:__________________________________ studying in CLASS - XII Science

having, Roll no :________

He/ She has satisfactorily completed the required number of project / practicals in

school as laid down by the CBSE Board.

Principal External examiner Subject teacher

Seal of the Institute Date: ___/___/______. Department of __________

 Acknowledgement

I have taken efforts in this project. However,it would not have

been possible without the kind support and help of many
individuals.

I would like to thank my Principal Sister Shareena Pinto and

the school for providing with facilities required to do my
project

I am highly indebted to my physics teacher Mrs.Vaijayantee

Deshpande for her invaluable guidance which has sustained
my efforts in all the stages of this project work.

I would also like to thank my parents for their continuous

support and encouragement.

My thanks and appreciation also goes to my fellow classmates

and laboratory assistant in developing the project and to the
people who have willingly helped me out with their abilities.
 INDEX
1. Certificate
2. Acknowledgement
3. Index
4. Introduction
5. Aim
6.Material required
7.Theory:-
 SEMICONDUCTOR DIODE (JUNCTION DIODE)
 FORMATION OF P-N JUNCTION
 FORWARD BIASING OF P-N JUNCTION
 REVERSE BIASING OF P-N JUNCTION
 PROPERTIES OF P-N JUNCTION
8.Procedure
9.Working Of P-N Junction
10.Information about material
11. Applications
12. Conclusion
13. Result
14. Reference

THANK YOU!
INTRODUCTION
Conductors
are materials that permit electrons to flow freely from particle to particle.
Examples of conductors include metals, aqueous solutions of salts (i.e., ionic
compounds dissolved in water), graphite, and the human body.

Insulators
are materials that impede the free flow of electrons from atom to atom and
molecule to molecule.Examples of insulators include plastics, Styrofoam,
paper,rubber, glass and dry air.

Semiconductors
are those substances whose conductivity lies between conductors and
insulators. e.g., Germanium,Silicon, Carbon etc.

P-n Junction
is a boundary or interface between two semiconductor materials—
one doped with positive charge carriers (p-type) and the other with
negative charge carriers (n-type). This junction forms the basis of
many electronic components. Under forward bias, it allows current flow,
while under reverse bias, it acts as a barrier. P-n junctions are
fundamental to the operation of diodes, transistors, and other
semiconductor devices in electronic circuits
AIM -
To Study and verify the functionality of PN Junction
diode In Forward and Reverse Bias.

MATERIAL REQUIRED-
PN JUNCTION DIODE(4004), BATTERY(9V DC), BATTERY
CONNECTOR,LED(5v) ,RESISTOR (100 ohm)
CARDBOARD,SCISSORS,GLUE GUN ,SOLDERING GUN

THEORY-
SEMICONDUCTOR DIODE (JUNCTION DIODE)
A semiconductor diode is a p-n junction diode. It is a two-terminal device that conducts
current only in one direction.
The figure below represents the symbol for the p-n junction diode, which symbolises the
direction of the current. By applying an external voltage V we can vary the potential
barrier.

Semiconductor Diode Symbol-

A p-n junction is denoted by the symbol shown in the figure above. Here, the direction of
the arrow indicates the permissible direction of the current.

Types Of Semiconductor-
A) Intrinsic Semiconductor. A pure semiconductor material is called intrinsic
semiconductor.Crystalline form of Germanium (Ge) and Silicon (Si) are examples of
intrinsic semiconductors.
B) Extrinsic Semiconductor. A semiconductor material made deliberately impure by
adding suitable impurity atoms through doping, is called an extrinsic semiconductor.

It is of two types:

(1) n-type semiconductor.

The n-type semiconductor is obtained by adding a small quantity (one millionth part) of
a pentavalent impurity like Phosphorus (15), Arsenic (33), Antimony(51) or Bismuth (83)
to a pure semiconductor crystal. Generally, Arsenic (As) is taken for this purpose.

(2) p-type semiconductor.

A p-type semiconductor is obtained by adding a small quantity (one millionth part) of a
trivalent impurity like Boron (5), Aluminium (13), Gallium (31), Indium (49) or Thalium
(81) to a pure semiconductor crystal. Generally Indium (In) is taken for this purpose.
The process of adding impurity deliberately, is called doping.

FORMATION OF P-N JUNCTION-

 A p-n junction is a single crystal of Silicon or Germanium doped in such a
manner that one half of it acts as a p-type semiconductor while the other
half acts as n-type semiconductor.
 Two processes occur during the formation of semiconductors,namely diffusion and
drift.
 As soon as the p-n junction is formed, due to concentration gradient, holes
diffuse from p to n side and electrons diffuse from n to p side leaving behind
accepter ions on p-side and donor ions on n-side which are immobile.
 This diffusion of majority charge carriers across the junction gives rise to an
electric current from p to n side known as diffusion current.
 The small region in the vicinity of the junction which is depleted of free charge
carriers and has only immobile ions is called depletion layer.
 The accumulation of negative charges in p-region and positive charges in n-region
sets up a potential difference across the junction which acts as a barrier and
opposes further diffusion of electrons. This barrier is known as potential barrier.
 The barrier potential sets up a barrier field from n to p side which pushes the
electrons towards n-side and holes towards p-side. This current set up by barrier
field from n to p side is known as drift current.
 In equilibrium state, diffusion current is equal to drift current
FORWARD BIASING OF P-N JUNCTION-
 When we apply the external voltage across the semiconductor diode in such a way
that the p-side is connected to the positive terminal of the battery and the n-side is
connected to the negative terminal, then the semiconductor diode is said to be
forward-biased.
 In this case, the built-in potential of the diode and thus the width of the depletion
region decreases, and the height of the barrier gets reduced.
 The overall barrier voltage, in this case, comes out to be V0-V, which is the difference
between the built-in potential and the applied potential.
 As we supply a small amount of voltage, the reduction in the barrier voltage from the
above-given formula is very less and thus only a small number of current carriers
cross the junction in this case.
 Whereas, if the potential is increased by a significant value, the reduction in the
barrier height will be more, thus allowing the passage of more number of carriers.
REVERSE BIASING OF P-N JUNCTION-
 When we apply the external voltage across the semiconductor diode in such a way
that the positive terminal of the battery is connected to its n-side and the negative
terminal of the battery is connected to the p-side of the diode, then it is said to be in
the condition of reverse bias.
 When an external voltage is applied across the diode, as the direction of the external
voltage is the same as that of the barrier potential, the total voltage barrier sums up
to be (V0+V).
 Also, the width of the depletion region increases. As a result of this, the motion of
carriers from one side of the junction to another decreases significantly.

Properties of PN Junction Diode-

Following are some of the common properties of a PN junction diode:
a) PN junction diode has the ability to rectify electric current
b) It can create a potential barrier and make use of its capacitance properties
c) PN junction creates various nonlinear current-voltage characteristics in
the semiconductor diode
d) The most important property is transforming light energy into electrical
energy
e) The PN junction diode irradiates when the current flows through it.
PROCEDURE-
1) Take a cardboard sheet and make holes on the board with the help of
scissors as given in fig a.
2) Place components on the board and solder it with the soldering gun .
3) Connect the components with the help of connecting wires and secure
them with hot glue gun.
4) Connect the components as given below:-

5)Attach the resistor to the diode before connecting it to led bulb at the
positive terminal of the diode ( P type).
FOR FORWARD BIAS-
1) Take the battery connector and connect the positive terminal of the battery to the
anode (P type)of the diode.
2) Connect cathode (N type) of diode to the led .
3) From the second end of LED join the connecting wire to the negative terminal of the
battery.
Thus the forward bias is complete.

FOR REVERSE BIAS-

1)Connect the negative terminal of battery connector to the anode of diode(p
type) and the cathode(n type) to one of the terminal of 5v led .
2)from the other terminal of led join the positive terminal of the battery
connector.
Thus processes the reverse bias.

INFORMATION ABOUT THE MATERIALS-

1) DIODE- A diode is a two terminal device.It conducts when forward biased
and does not conduct when reverse biased. It does not emit light while
conducting.
2)LED-Light emitting diode is also a two terminal device. It also conducts
when forward biased and does not conduct when reverse biased.It emits light
while conducting.Hence, it glows.
3)RESISTOR-It is a two terminal device. It conducts when either forward
biased or reverse biased.(In-fact there is no forward or reverse bias for a
resistor).It conducts even when operated with A.C. voltage.

Applications of P-N Junction Diode-

1. P-N junction diode can be used as a photo diode as the diode is sensitive
to the light when the configuration of the diode is reverse-biased.
2. It can be used as a solar cell.
3. When the diode is forward-biased, it can be used in LED lighting
applications.
4. It is used as rectifier in many electric circuits and as a voltage-controlled
oscillator in var-actors.

CONCLUSION-
During forward bias, the diode conducts current with increase in voltage.
During reverse bias, the diode does not conduct with increase in voltage
(break down usually results in damage of diode).
RESULT -
A p–n junction diode allows charge carriers to flow in one direction, but not
in the opposite direction; negative charge carriers (electrons) can easily flow
through the junction from n to p but not from p to n, and the reverse is true
for positive charge carriers (holes).

REFERENCE-
 www.scribd.com
 www.byjus.com
 NCERT LAB MANUAL
 NCERT TEXTBOOK
 https://youtu.be/rl8onFSSg6c?si=xYzSoIPYcJMapKN0
Working of P-N Junction:-

If an external voltage is applied to the PN junction

diode terminable, potential alteration between the P
and N-region will occur.
The potential difference can alter majority carriers’
flow for the diffusion of electrons and holes by the PN
junction.
If the applied voltage helps decrease the depletion
layer width, then the assumed diode will be in
forwarding bias, and if vice versa, reverse bias is
assumed. If the width of the depletion layer has not
altered one bit, then it is in the zero-bias state.

Forward Bias: Potential barrier decreased by the

external voltage

Reverse Bias: Built-in potential barrier increased by the

external voltage.

Zero Bias: No voltage from exterior applied

THANK YOU!