1.

P-N JUNCTION DIODE CHARACTERISTICS

Aim
To study the Volt-Ampere Characteristics of Silicon P-N Junction Diode and to find cut-in
voltage, static and dynamic resistances.
Apparatus / Components required:
S. No Apparatus Type Range Quantity
01 PN Junction Diode 1N4001 1
1k ohm, 10% tolerance,
02 Resistance 1
1/2 watt rating
03 Regulated power supply (0 – 30V), 2A Rating 1
04 Ammeter MC (0-30)mA, (0-500)μA Each 1
05 Voltmeter MC (0 – 1)V, (0 – 30)V Each 1
Bread board 1
06
Connecting wires Few

Introduction:
Donor impurities (pentavalent) are introduced into one-side and acceptor impurities into
the other side of a single crystal of an intrinsic semiconductor to form a p-n diode with a junction
called depletion region (this region is depleted off the charge carriers). This region gives rise to a
potential barrier Vγ called Cut- in Voltage. This is the voltage across the diode at which it starts
conducting. The P-N junction can conduct beyond this Potential.
The P-N junction supports uni-directional current flow. If (+)ve terminal of the input supply
is connected to anode (P-side) and (–)ve terminal of the input supply is connected to cathode (N-
side), then diode is said to be forward biased. In this condition the height of the potential barrier at
the junction is lowered by an amount equal to given forward biasing voltage.
Both the holes from p-side and electrons from n-side cross the junction simultaneously and
constitute a forward current ( injected minority current – due to holes crossing the junction and
entering N-side of the diode, due to electrons crossing the junction and entering P-side of the diode).
Assuming current flowing through the diode to be very large, the diode can be approximated as
short-circuited switch. If (–)ve terminal of the input supply is connected to anode (p-side) and (+)ve
terminal of the input supply is connected to cathode (n-side) then the diode is said to be reverse
biased. In this condition an amount equal to reverse biasing voltage increases the height of the
potential barrier at the junction.
1
Circuit diagram:
Forward Bias

Reverse Bias

Model Graph:

2
Both the holes on p-side and electrons on n-side tend to move away from the junction thereby
increasing the depleted region. However the process cannot continue indefinitely, thus a small
current called reverse saturation current continues to flow in the diode. This small current is due
to thermally generated carriers. Assuming current flowing through the diode to be negligible, the
diode can be approximated as an open circuited switch.
The volt-ampere characteristics of a diode explained by following equation:

I = Io(exp(V/ ηVT)-1) I=current flowing in the diode Io=reverse saturation current V=voltage
applied to the diode

VT=volt-equivalent of temperature=kT/q=T/11,600=26mV(@ room temp). η=1 (for Ge) and 2

(for Si)
Germanium diode has smaller cut-in-voltage than Silicon diode. The reverse saturation current in
Ge diode is larger in magnitude when compared to silicon diode.
Procedure:
Forward Biased Condition:
1. Connect the PN Junction diode in forward bias i.e Anode is connected to positive of the power
supply and cathode is connected to negative of the power supply.
2. Use a Regulated power supply of range (0-30) V and a series resistance of 1kΏ.
3. For various values of forward voltage (Vf) note down the corresponding values of forward
current (If).
Reverse Biased condition:
1. Connect the PN Junction diode in Reverse bias i.e; anode is connected to negative of the power
supply and cathode is connected to positive of the power supply.
2. For various values of (Vr) note down the corresponding values of reverse current ( Ir ).
Precautions:
1. While doing the experiment do not exceed the ratings of the diode. This may lead to damage
of the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per the
circuit diagram.

3
Characteristics of PN junction diode:
1. Breakdown voltage can be traded with switching speed. A reduction in recombination lifetime
through addition of suitable impurities will increase leakage current. This can be countered
by decreasing diode area which however will lead to reduced forward current rating unless
doping is increased. This will lead to a reduced breakdown voltage.
2. The breakdown voltage and reverse recovery are also related together in more direct manner.
Regions which have higher doping also have a lower recombination lifetime so that a lower
breakdown voltage diode is likely to have lower lifetime and better switching speeds. So a
single diode cannot meet the diverse applications.

Tabular column:
Forward Bias Reverse Bias

S. No Vf (volts) If (mA) S. No Vr (volts) Ir (μA)

4
Result:
Thus the VI characteristic of PN junction diode was verified.
i. Cut in voltage = V

ii. Static forward Resistance Rdc = (Vf/If) Ω

iii. Dynamic forward Resistance rac = (∆Vf/∆If) Ω

iv. Static Reverse Resistance Rdc = (Vr/Ir) Ω

v. Dynamic Reverse Resistance rac = (∆Vr/∆Ir) Ω

Pre lab Questions:

1. What is the need for doping?
2. How depletion region is formed in the PN junction?
3. What is break down voltage?
4. What is cut-in or knee voltage? Specify its value in case of Ge or Si?
5. What are the differences between Ge and Si diode?
6. What is the relationship between depletion width and the concentration of impurities?
Post lab Questions:
1. Generate input and output characteristics in PN Junction diode using PSPICE and compare
with the obtained output.
2. How does PN-junction diode acts as a switch?
3. Comment on diode operation under zero biasing condition.
4. For a uniformly doped silicon PN junction diode with an N-type doping of and a P-type
doping of 2 x , Sketch the potential within the space charge region at equilibrium. What
fraction of the built-in voltage is dropped in the N-region? Where will most of the built-in
voltage be dropped if the P type doping is much larger than the N-type doping?
5. The depletion capacitance/Area measured for a symmetrical Silicon PN junction at different
bias voltages is given below:
(a) Determine the doping of N and P-regions
(b) Determine the built-in voltage
(c) Determine the depletion width at zero bias

5
 2. ZENER DIODE CHARACTERISTICS

Aim:
To study the Volt-Ampere characteristics of Zener diode and to measure the Zener break
down voltage.
Apparatus / Components required:
S. No Apparatus Type Range Quantity
01 Zener Diode IZ 6.2 1
1k ohm, 10% tolerance, 1/2 watt
02 Resistance 1
rating
03 Regulated power supply (0 – 30V), 2A rating 1
04 Ammeter mC (0-30)mA 1
05 Voltmeter mC (0 – 1)V, (0 – 10)V 1
Bread board 1
06
Connecting wires Few

Introduction:
An ideal P-N Junction diode does not conduct in reverse biased condition. A Zener diode
conducts excellently even in reverse biased condition. These diodes operate at a precise value of
voltage called break down voltage. A Zener diode when forward biased behaves like an ordinary
P-N junction diode. A Zener diode when reverse biased can either undergo avalanche breakdown
or Zener breakdown.
Avalanche breakdown:-If both p-side and n-side of the diode are lightly doped, depletion
region at the junction widens. Application of a very large electric field at the junction may rupture
covalent bonding between electrons. Such rupture leads to the generation of a large number of
charge carriers resulting in avalanche multiplication.
Zener breakdown:-If both p-side and n-side of the diode are heavily doped, depletion
region at thejunction reduces. Application of even a small voltage at the junction ruptures covalent
bonding and generates large number of charge carriers. Such sudden increase in the number of
charge carriers results in Zener mechanism.

6
Circuit diagram:
Forward Bias

Reverse Bias

Zener Diode Symbol:

Tabular column:
Forward Bias Reverse Bias

S. No Vf (volts) If (mA) S. No Vf (volts) If (mA)

7
Model Graph:

Precautions
1. While doing the experiment do not exceed the ratings of the diode. This may lead to damage
of the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per the
circuit diagram.
Procedure:
Forward Biased Condition:
1. Connect the Zener diode in forward bias i.e; anode is connected to positive of the power supply
and cathode is connected to negative of the power supply as in circuit
2. Use a Regulated power supply of range (0-30) V and a series resistance of 1kΏ.
3. For various values of forward voltage (Vf) note down the corresponding values of forward
Current (If).
Reverse biased condition:
1. Connect the Zener diode in Reverse bias i.e; anode is connected to negative of the power
supply and cathode is connected to positive of the power supply as in circuit.
2. For various values of reverse voltage (Vr ) note down the corresponding values of reverse
current ( Ir ).

8
Result:
The Zener diode characteristics have been verified and the following parameters were
calculated
i) Cut in voltage = ……… V
ii) Break down voltage =………. V

Characteristics of Zener Diode:

For IZ6.2 Zener diode,
Forward Bias:
At a given (constant) diode current, V exhibits an approximately linear shift in the VI -characteristic
due to the combined effect of the temperature dependences of both IS and VT
Typically, the VI -characteristic shifts approximately -2 mV/°C.
Reverse Bias:
The temperature dependence of the reverse current is that of IS alone, which changes exponentially
as a function of temperature. Typically, IS approx. doubles for every 10 °C increase in Temperature.
These variations may lead to significant changes in the operation of a circuit over a large
temperature range and, in many applications, requires compensation strategies to be implemented
in the design of some circuits.
Pre lab Questions:
1. Explain the concept of Zener breakdown?
2. How depletion region gets thin by increasing doping level in Zener diode?
3. State the reason why an ordinary diode suffers avalanche breakdown rather than Zener
breakdown?
4. Give the reasons why Zener diode acts as a reference element in the voltage regulator circuits.
5. What type of biasing must be used when a Zener diode is used as a regulator?

Post lab Questions:

1. Generate input and output characteristics in Zener diode using PSPICE and compare with the
obtained output .
2. Design a DC power supply network using Zener diode.

9
3. What happens when the Zener diodes are connected in series?

4. Justify the use of Zener diode in a stabilization circuit?

5. How will you differentiate the diodes whether it is Zener or avalanche when you are given two
diodes of rating 6.2 v and 24V?
6. How does a Zener diode protect meters from excess voltage that is applied accidentally

10
 3. DIODE RECTIFIER CIRCUITS – Half Wave Rectifier (HWR)

Aim:
To design and construct the diode rectifier circuit and analyze the following parameters
a. To plot output waveform of the HWR
b. To find ripple factor using formulae
c. To find the efficiency
Apparatus / Components required:
S. No Apparatus Type Range Quantity
(6-0-6 )V, 500mA, 1A
01 Step down Transformer 1
Rating
470 ohm, 10% tolerance,
02 Resistance 1
1/2 watt rating
03 Capacitor 470µF 1
04 Diode IN4001 1
Bread board 1
05
Connecting wires Few

Half wave rectifier

A device is capable of converting a sinusoidal input waveform into a unidirectional
waveform with non-zero average component is called a rectifier. A practical half wave rectifier with
a resistive load is shown in the circuit diagram. In positive half cycle, Diode D is forward biased and
conducts. Thus, the output voltage is same as the input voltage. In the negative half cycle, Diode D
is reverse biased, and therefore output voltage is zero. A smoothing filter is induced between the
rectifier and load in order to attenuate the ripple component. The filter is simply a capacitor
connected from the rectifier output to ground. The capacitor quickly charges at the beginning of a

cycle and slowly discharges through RL after the positive peak of the input voltage. The variation in
the capacitor voltage due to charging and discharging is called ripple voltage. Generally, ripple is
undesirable, thus the smaller the ripple, the better the filtering action.
Ripple factor is a measure of effectiveness of a rectifier circuit and defined as a ratio of RMS
value of ac component to the dc component in the rectifier output.

11
Circuit Diagram of Half Wave Rectifier

Observations:

Input Output Ripple Voltage

Waveform Waveform (with filter)
(without filter)
Amplitude
Time Period
Frequency

12
Theoretical calculations for Ripple Factor:
Without Filter:
Vrms = Vm / 2

Ripple factor (Theoretical)

Ripple Factor(practical) where

With Filter:

Ripple Factor (Theoretical)

Where f = 50Hz, R = 1K , C = 1000 F

Ripple Factor(practical)

Percentage Regulation %
VNL = DC voltage at the load without connecting the load (Minimum current).
VFL = DC voltage at the load with load connected.

Efficiency
PAC = V2rms / RL
PDC = Vdc / RL

The ripple factor can be lowered by increasing the value of the filter capacitor or increasing the load
capacitance.

13
Result:
Thus the Half Wave Rectifier circuit is constructed and ripple factor, efficiency, Vp(rect), and Vdc
values for circuits has been analyzed

14
 4. DIODE RECTIFIER CIRCUITS – Full Wave Rectifier (FWR)

Aim:
To design and construct the diode rectifier circuit and analyze the following parameters
a. To plot output waveform of the FWR
b. To find ripple factor using formulae
c. To find the efficiency
Apparatus / Components required:
S. No Apparatus Type Range Quantity
(6-0-6 )V, 500mA, 1A
01 Step down Transformer 1
Rating
470 ohm, 10% tolerance,
02 Resistance 1
1/2 watt rating
03 Capacitor 470µF 1
04 Diode IN4001 2
Bread board 1
05
Connecting wires Few

Full wave rectifier

A device is capable of converting a sinusoidal input waveform into a unidirectional
waveform with non-zero average component is called a rectifier.
A practical half wave rectifier with a resistive load is shown in the circuit diagram. It consists
of two half wave rectifiers connected to a common load. One rectifies during positive half
cycle of the input and the other rectifying the negative half cycle. The transformer supplies
the two diodes (D1 and D2) with sinusoidal input voltages that are equal in magnitude but
opposite in phase. During input positive half cycle, diode D1 is ON and diode D2 is OFF.
During negative half cycle D1 is OFF and diode D2 is ON. Peak Inverse Voltage (PIV) is the
maximum voltage that has to be withstand by a diode when it is reverse biased. Peak inverse

voltage for Full Wave Rectifier is 2Vm because the entire secondary voltage appears across
the non-conducting diode .
The output of the Full Wave Rectifier contains both ac and dc components. A majority
of the applications, which cannot tolerate a high value ripple, necessitates further processing
of the rectified output. The undesirable ac components i.e. the ripple, can be minimized using
filters.

15
Ripple Factor:
Ripple factor is defined as the ratio of the effective value of AC components to the
average DC value. It is denoted by the symbol ' '.

Efficiency:
The ratio of output DC power to input AC power is defined as efficiency.

= 81% (if R >> Rf, then Rf can be neglected).

The maximum efficiency of a Full Wave Rectifier is 81.2%.
Percentage of Regulation:
It is a measure of the variation of DC output voltage as a function of DC output current
(i.e., variation in load).

Percentage of regulation = %
VNL = Voltage across load resistance, when minimum current flows through it.
VFL = Voltage across load resistance, when maximum current flows through.
For an ideal Full-wave rectifier, the percentage regulation is 0 percent. The percentage of
regulation is very small for a practical full wave rectifier.
Peak- Inverse - Voltage (PIV):
It is the maximum voltage that the diode has to withstand when it is reverse biased.
PIV = 2Vm
Transformer Utilization Factor
Transformer utilization factor (TUF), which is defined as the ratio of power delivered
to the load and ac rating of the transformer secondary, So, TUF = dc power delivered to the
load/ac rating of transformer secondary Transformer Utilization Factor, TUF can be used to
determine the rating of a transformer secondary. It is determined by considering the
primary and the secondary winding separately and it gives a value of 0.693.

16
Theoretical Calculations:
Without filter:

Ripple factor (Theoretical) =

Ripple Factor (Practical)

With filter:
Ripple factor (Theoretical)

Where f = 50Hz, R =1K , C = 1000 F.

Ripple Factor

Percentage Regulation = %
VNL = DC voltage at the load without connecting the load (Minimum current).
VFL = DC voltage at the load with load connected.

Efficiency %
PAC = V2rms / RL
PDC = Vdc / RL

17
The maximum efficiency of a Full Wave Rectifier is 81.2%
Transformer Utilization Factor
Transformer utilization factor (TUF), which is defined as the ratio of power delivered
to the load and ac rating of the transformer secondary. So,
TUF = dc power delivered to the load/ac rating of transformer secondary
Transformer Utilization Factor, TUF can be used to determine the rating of a transformer
secondary. It is determined by considering the primary and the secondary winding
separately and it gives a value of 0.812.
Circuit Diagram

MODEL GRAPH:

18
Observations:
Output
Ripple Voltage
Input Waveform Waveform
(with filter)
(without filter)

Amplitude
Time Period
Frequency

Pre lab Questions:

1. What is the PIV of rectifier circuits?

2. A bridge rectifier is preferable to a full-wave rectifier using center-tap transformer as
a. It uses four diodes
b. Its transformer does not require center-tap
c. It requires much smaller transformer for the same output
d. All of these
3. In a full-wave bridge rectifier, the current in each diode flows for
a. Complete cycle of the input signal
b. Half-cycle of the input signal
c. Less than half-cycle of the input signal
d. More than half-cycle of the input signal
4. What is the purpose of a filter in dc power supply?
5. What is TUF? Give the TUF of half wave, full wave-center tapped and bridge rectifier.
Post lab Questions:
1.When a 50Hz ac signal is fed to a rectifier, the ripple frequency of the output voltage
waveform for full bridge rectifier is
(a) 25 Hz (b) 50 Hz (c) 100 Hz (c)150 Hz

19
2. Trace the current through this rectifier circuit at a moment in time when the AC source’s
polarity is positive on right and negative on left as shown. Be sure to designate the
convention you use for current direction (conventional or electron flow):

Also, mark the polarity of the voltage drop across Rload.

1. For the figure shown below. Determine (a) the DC output voltage, (b) DC load current, (c)
the RMS value of the load current, (d) the DC power, (e)the AC power, (f) efficiency of
rectifier, (g) peak inverse voltage of each diode, and (h) output frequency. Assume all
diodes are ideal.

Result:
Thus the Full Wave rectifier circuits is constructed and ripple factor, efficiency, Vp(rect), and
Vdc values for circuits has been analyzed

20
 5. DIODE CLIPPER & CLAMPER

Aim

To construct and test the clipper and clamper circuits

Apparatus / Components Required

Sl. No. COMPONENT SPECIFICATION QTY

1. CRO (0-20M)HZ 1
2. Function generator 1
3. Resistor 10KΩ 1
4. Capacitor 0.1µF 1
5. Diode IN4007 1
6. Bread board - 1
7. Connecting wires - -

Theory – Clipper

A clipper is a device designed to prevent the output of a circuit from exceeding a

predetermined voltage level without distorting the remaining part of the applied
waveform. A clipping circuit consists of linear elements like resistors and non-linear
elements like junction diodes or transistors, but it does not contain energy-storage
elements like capacitors. Clipping circuits are used to select for purposes of transmission,
that part of a signal wave form which lies above or below a certain reference voltage level.
Thus, a clipper circuit can remove certain portions of an arbitrary waveform near the
positive or negative peaks. Clipping may be achieved either at one level or two levels.
Usually under the section of clipping, there is a change brought about in the wave shape of
the signal.

21
 Circuit Diagram of Diode Positive Clipper

Circuit Diagram of Diode Negative Clipper

Tabulation

Output
Input voltage Output voltage Input frequency
frequency
Positive
clipper
Negative
clipper

22
Model Graph

Positive Clipper

Negative Clipper

23
 CLAMPER

THEORY

A clamper is an electronic circuit that fixes either the positive or the negative peak excursions
of a signal to a defined value by shifting its DC value. The clamper does not restrict the peak-
to-peak excursion of the signal, it moves the whole signal up or down so as to place the peaks
at the reference level. A diode clamp (a simple, common type) consists of a diode, which
conducts electric current in only one direction and prevents the signal exceeding the
reference value; and a capacitor which provides a DC offset from the stored charge. The
capacitor forms a time constant with the resistor load which determines the range of
frequencies over which the clamper will be effective

CIRCUIT DIAGRAM OF DIODE POSITIVE CLAMPER

CIRCUIT DIAGRAM OF DIODE NEGATIVE CLAMPER

24
TABULATION

Output
Input voltage Output voltage Input frequency
frequency
Positive
clamper
Negative
clamper

MODEL GRAPH

POSITIVE CLAMPER

NEGATIVE CLAMPER

RESULT:

Thus, the clamper circuit was constructed and the output waveforms were obtained

25
 6. CHARACTERISTICS OF BJT
AIM
To draw the input and output characteristics of transistor connected in Common Emitter (CE)
configuration

APPARATUS

S. No. COMPONENT SPECIFICATION QTY

1. Transistor BC 107 1

2. Regulated Power supply (0-30)V 2

3. Resistor 1KΩ 1

4. Ammeters (0-500)mA,(0-30)mA 1

5. Voltmeter (0-20v) 2

6. Bread board - 1

7. Connecting wires - -

THEORY
A transistor is a three terminal device In common emitter configuration, input voltage is
applied between base and emitter terminals and output is taken across the collector and emitter
terminals. Therefore the emitter terminal is common to both input and output. The input characteristics
resemble that of a forward biased diode curve. This is expected since the Base-Emitter junction of the
transistor is forward biased. As compared to CB arrangement IB increases less rapidly with VBE .

Therefore input resistance of CE circuit is higher than that of CB circuit.

The output characteristics are drawn between Ic and VCE at constant IB. the collector current
varies with VCE unto few volts only. After this the collector current becomes almost constant, and
independent of VCE. The value of VCE up to which the collector current changes with V CE is known as Knee
voltage. The transistor always operated in the region above Knee voltage, IC is always constant and is
approximately equal to IB.

26
 CIRCUIT DIAGRAM OF COMMON EMITTER CONFIGURATION OF A TRANSISTOR

INPUT CHARACTERISTICS OF COMMON EMITTER TRANSISTOR

VCE = 5V VCE = 7V
S.NO
VBE(V) IB(μA) VBE(V) IB(μA)

OUTPUT CHARACTERISTICS OF COMMON EMITTER TRANSISTOR

IB = 100 μA IB = 300 µA
S.NO
VCE(V) IC(mA) VCE(V) IC (mA)

27
MODEL GRAPHS
INPUT CHARACTERISTICS OF COMMON EMITTER TRANSISTOR:

OUTPUT CHARACTERISTICS OF COMMON EMITTER TRANSISTOR

PROCEDURE TO FIND
INPUT CHARACTERISTICS OF CE TRANSISTOR
1. Connect the circuit as per the circuit diagram.
2. For plotting the input characteristics the output voltage VCE is kept constant at 3V and for
different values of VBE. Note down the values of IC
3. Repeat the above step by keeping VCE at 7V.
4. Tabulate all the readings.
5. Plot the graph between VBE and IB for constant VCE

28
OUTPUT CHARACTERISTICS OF COMMON EMITTER TRANSISTOR
1. Connect the circuit as per the circuit diagram
2. For plotting the output characteristics, the input current IB is kept constant at 100μA and for
different values of VCE note down the values of IC
3. Repeat the above step by keeping IB at 300 μA
4. Tabulate all the readings
5. Plot the graph between VCE and IC for constant IB

RESULT
Thus the input and output characteristics of a transistor in CE configuration are drawn

29
 7. CHARACTERISTICS OF METAL OXIDE SEMICONDUCTOR FIELD
EFFECT TRANSISTORS (MOSFETS)

Objective
To obtain the drain characteristics and transfer characteristics of MOSFET.

Apparatus / Components Required

S. No Apparatus Type Range Quantity

1 MOSFET IRF150 1

2 Resistor 500 Ω , 1K Ω 1 each

3 DC power source 5 V 1 each

4 Connecting wire

Theory
In a MOSFET, current flows from the drain terminal to the source terminal through a
semiconductor channel. The resistance of the channel, and therefore its ability to conduct current, is
controlled by a voltage applied to a third terminal denoted as the gate.MOSFETs can be either an n-
channel type or a p-channel type. In a n-channel MOSFET a positive voltage is applied to the drain
terminal for operation while in a p-channel MOSFET a negative voltage is applied to the drain
terminal for operation. An n-channel and p-channel type MOSFET may be one of two modes;
enhancement mode or depletion mode. The enhancement mode MOSFET is normally “off” (in cutoff
and conducting no current) when no voltage is applied to the gate and is “on” (in saturation and
conducting current) when a voltage greater than the gate-to-source threshold is applied to the gate.
The depletion mode MOSFET is normally “on” (in saturation and conducting current) when no
voltage is applied to the gate and is “off” (in cutoff and not conducting current) when a voltage more
negative than the gate-to-source threshold is applied to the gate.

30
MOSFET Characteristics Circuit Diagram

M1
Vds
20Vdc
IRF150
Vgs
10Vdc

Model Graph
Transfer Characteristics: Drain Characteristics:

Procedure
Transfer characteristics
1. Connect the MOSFET as per the circuit diagram
2. Keep the VGS =10 V, VDS =20 V
3. Set in the DC sweep primary and secondary values.
4. Place the voltage probe at source of MOSFET and verify the circuit.

31
Drain characteristics
1. Connect the MOSFET as per the circuit diagram
2. Keep the VGS =10 V, VDS =20 V
3. Set in the DC sweep primary and secondary values.
4. Place the voltage probe at source of MOSFET and verify the circuit

Result
The drain Characteristics and Transfer Characteristics of MOSFET was verified

32