Baisc Electronics Question Bank All Modules
Baisc Electronics Question Bank All Modules
Module – 1
1)Explain V-I characteristics of a PN junction diode for both forward and reverse characteristics.
2) Define following diode parameters: (i) Static resistance (ii) Dynamic resistance (iii) Knee voltage (iv) Forward
voltage drop (v) Maximum forward current (vi) Reverse saturation current (vii) Reverse breakdown voltage (viii)
Peak inverse voltage (PIV) (ix) Maximum power rating
3) With appropriate circuit diagram, explain the DC load line analysis of semiconductor diode.
4) For the circuit shown in the figure, draw the DC load line and locate Q-point.
5) Find the value of the series resistance R required to drive a forward current of 1.25 mA through a
Germanium diode from a 4.5 V battery. Write the circuit diagram showing all the values.
6) What is a rectifier? Explain positive half wave rectifier with input and output waveforms.
7) Explain the working of centre tapped full wave rectifier with neat circuit diagram and waveforms.
8) With a neat circuit diagram and waveforms, explain the working of a bridge rectifier.
9) Describe the working of a capacitor filter for a half wave rectifier with a neat circuit diagram
and necessary waveforms.
10) With a neat diagram and waveforms, explain the full-wave rectifier with a capacitive filter and
derive the expression for ripple factor.
12) What is Zener diode? With neat circuit diagram, explain the operation of voltage regulator
with and without load.
Module – 2
1. With a neat diagram, explain the operation of an npn transistor.
3. Explain various currents and voltages flowing through the BJT transistor.
4. Describe with neat circuit diagram of BJT amplification for both voltage and current.
5. With neat diagram, explain the input and output characteristics of transistor in common
base configuration.
8. With respect to BJT, describe the concept of obtaining the DC load line.
9. Draw the DC load line for transistor and identify Q point and explain.
13. Make use of N-channel enhancement type MOSFET and describe the construction and
working.
14. Explain depletion type MOSFET along with the transfer and drain characteristics.
15. Explain the transfer and drain characteristics of enhancement type MOSFET.
Module – 3
(i)CMRR (ii)Slew rate (iii)Input offset voltage (iv)Input bias current vi)Common mode gain
(vi)Input Offset Current (vii) Input bias current (viii) Input resistance (ix) Output
resistance (x) Slew rate (xi)PSRR.
i) (10110001101011.111100000)2=(?)8
ii) (10110001101011.11110010)2=(?)16
iii) (1010.011)2=(?)10
2. Convert Decimal to Binary: (i)41(ii)153(iii))0.6875(iv) 0.513
3. Convert Binary to Decimal:(i)110111(ii)10101010(iii)0110(iv) 100.1010
4. Convert the following:
i. (110.1101)2=(?)10
ii. (847.951)10=(?)8
iii. (CAD.BF)16=(?)10
5. Convert the following:
i. (225)10=(?)2= (?)8=(?)16
ii. (11010111)2=(?)10=(?)8=(?)16
iii. (623)8=(?)10=(?)2=(?)16
iv. (2AC5)16=(?)10=(?)8=(?)2
6. Convert the following:
a) 3A6.C58D(16)=?(8)
b) 0.6875(10)=?(2)
c) Computethe9’scomplimentof25.639(10)
d) Computethe1’scomplimentof11101.0110(2)
7. Subtract the following using 10’s complement:
i) (72532− 3250)10
ii) (3250− 72532)10
2. What are the two types of strain gauges? Explain with neat diagrams.
3. Describe the working of a linear variable differential transducer (LVDT) with a neat diagram.
4. Explain the working principle of capacitive transducer.
5. Briefly explain with diagram of a resistance thermometer.
1. What Is noise? Explain the term Channel Noise and its effects.