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    2sb709a Galaxy

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    STRUGGLE KEEP

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    © All Rights Reserved
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    2sb709a Galaxy

    Uploaded by

    STRUGGLE KEEP
    6 views5 pages

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    2sb709a_galaxy

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    6 views5 pages

    2sb709a Galaxy

    Uploaded by

    STRUGGLE KEEP

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SB709A

    FEATURES
    Pb
    z High forward current transfer ratio hFE.
    Lead-free
    z Mini type package, allowing downsizing
    of the equipment and automatic insertion
    through the tape packing and the magazine
    packing.

    APPLICATIONS SOT-23
    z For general amplification complementary to 2SD601A

    ORDERING INFORMATION
    Type No. Marking Package Code

    2SB709A BQ1,BR1,BS1 SOT-23

    MAXIMUM RATING @ Ta=25℃ unless otherwise specified


    Symbol Parameter Value Units

    VCBO Collector-Base Voltage -45 V

    VCEO Collector-Emitter Voltage -45 V

    VEBO Emitter-Base Voltage -7 V

    ICP Peak collector Current -200 mA

    IC Collector Current -100 mA

    PC Collector Dissipation 200 mW

    Tj,Tstg Junction and Storage Temperature -55~150 ℃

    Document number: BL/SSSTC015 www.galaxycn.com


    Rev.A 1
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SB709A

    ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -45 V

    Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -45 V

    Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -7 V

    Collector cut-off current ICBO VCB=-20V,IE=0 -0.1 μA

    Collector cut-off current ICEO VEB=-10V,IC=0 -100 μA

    DC current gain hFE VCE=-10V,IC=-2mA 160 460

    Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 -0.5 V

    VCB=-10V, IE=-1mA
    Transition frequency fT 80 MHz
    f=200MHz

    Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 2.7 pF

    CLASSIFICATION OF hFE(1)
    Range 160-260 210-340 290-460

    Marking BQ1 BR1 BS1

    Document number: BL/SSSTC015 www.galaxycn.com


    Rev.A 2
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SB709A

    TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

    Document number: BL/SSSTC015 www.galaxycn.com


    Rev.A 3
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SB709A

    PACKAGE OUTLINE
    Plastic surface mounted package SOT-23

    SOT-23
    Dim Min Max
    A 2.85 2.95
    B 1.25 1.35
    C 1.0Typical
    D 0.37 0.43
    E 0.35 0.48
    G 1.85 1.95
    H 0.02 0.1
    J 0.1Typical
    K 2.35 2.45
    All Dimensions in mm

    SOLDERING FOOTPRINT

    Unit : mm
    PACKAGE INFORMATION

    Device Package Shipping

    2SB709A SOT-23 3000/Tape&Reel

    Document number: BL/SSSTC015 www.galaxycn.com


    Rev.A 4
    www.s-manuals.com

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