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    2sb624 Galaxy

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    STRUGGLE KEEP

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    © All Rights Reserved
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    2sb624 Galaxy

    Uploaded by

    STRUGGLE KEEP
    6 views5 pages

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    2sb624_galaxy

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    © © All Rights Reserved

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    6 views5 pages

    2sb624 Galaxy

    Uploaded by

    STRUGGLE KEEP

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SB624

    FEATURES
    Pb
    z High DC current gain.hFE: 200TYP
    Lead-free
    (VCE=-1.0V,IC=-100mA)
    z Complimentary to the 2SD596.

    APPLICATIONS
    z Audio frequency amplifier.
    z Switching appilication. SOT-23

    ORDERING INFORMATION
    Type No. Marking Package Code

    2SB624 BV1/BV2/BV3/BV4/BV5 SOT-23

    MAXIMUM RATING @ Ta=25℃ unless otherwise specified


    Symbol Parameter Value Units

    VCBO Collector-Base Voltage -30 V

    VCEO Collector-Emitter Voltage -25 V

    VEBO Emitter-Base Voltage -5 V

    IC Collector Current -Continuous -700 mA

    PC Collector Dissipation 200 mW

    Tj,Tstg Junction and Storage Temperature -55~150 ℃

    ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

    Document number: BL/SSSTC014 www.galaxycn.com


    Rev.A 1
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SB624

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -30 V

    Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -25 V

    Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V

    Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA

    Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA

    VCE=-1V,IC=-100mA 110 200 400


    DC current gain hFE
    VCE=-1V,IC=-700mA 50

    Collector-emitter saturation voltage VCE(sat) IC=-700mA, IB=-70mA -0.25 -0.6 V

    Base-emitter voltage VBE(on) VCE=-6V,IC=10mA -0.7 V


    Transition frequency fT VCE=-6V, IC=-10mA 160 MHz

    Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 17 pF

    CLASSIFICATION OF hFE(1)
    Range 110-180 135-220 170-270 200-320 250-400

    Marking BV1 BV2 BV3 BV4 BV5

    Document number: BL/SSSTC014 www.galaxycn.com


    Rev.A 2
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SB624

    TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

    Document number: BL/SSSTC014 www.galaxycn.com


    Rev.A 3
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SB624

    PACKAGE OUTLINE
    Plastic surface mounted package SOT-23

    SOT-23
    Dim Min Max
    A 2.85 2.95
    B 1.25 1.35
    C 1.0Typical
    D 0.37 0.43
    E 0.35 0.48
    G 1.85 1.95
    H 0.02 0.1
    J 0.1Typical
    K 2.35 2.45
    All Dimensions in mm

    SOLDERING FOOTPRINT

    Unit : mm
    PACKAGE INFORMATION

    Device Package Shipping

    2SB624 SOT-23 3000/Tape&Reel

    Document number: BL/SSSTC014 www.galaxycn.com


    Rev.A 4
    www.s-manuals.com

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