2SA1759

Transistors

High-voltage Switching Transistor

(Camera strobes and Telephone, Power supply)
(−400V, −0.1A)
2SA1759

zFeatures zDimensions (Unit : mm)

1) High breakdown voltage. (BVCEO = −400V) MPT3
2) Low saturation voltage,
typically VCE (sat)= −0.2V at IC / IB = −20mA / −2mA. 4.5

0.5
1.6 1.5

3) High switching speed, typically tf = 1µs at Ic =100mA.

4) Wide SOA (safe operating area).

2.5
4.0
5) Complements the 2SC4505. (1) (2) (3)

1.0
0.4
0.4 0.5 0.4
1.5 1.5
(1)Base 3.0

(2)Collector
(3)Emitter

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO −400 V
Collector-emitter voltage VCEO −400 V
Emitter-base voltage VEBO −7 V
−0.1 A(DC)
Collector current IC
−0.2 A(Pulse) ∗1
0.5
Collector power dissipation PC W
2 ∗2
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Single pulse, Pw=100ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −400 − − V IC= −50µA
Collector-emitter breakdown voltage BVCEO −400 − − V IC= −1mA
Emitter-base breakdown voltage BVEBO −7 − − V IE= −50µA
Collector cutoff current ICBO − − −10 µA VCB= −400V
Emitter cutoff current IEBO − − −10 µA VEB= −6V
Collector-emitter saturation voltage VCE(sat) − −0.2 −0.5 V IC= −20mA, IB= −2mA
Base-emitter saturation voltage VBE(sat) − − −1.5 V IC= −20mA, IB= −2mA
DC current transfer ratio hFE 82 − 180 − VCE= −10V , IC= −10mA
Transition frequency fT − 12 − MHz VCE= −10V , IE=10mA , f=5MHz
Output capacitance Cob − 13 − pF VCB= −10V , IE=0A , f=1MHz
Turn-on time ton − 0.7 − µs IC= −100mA RL=1.5kΩ
Storage time tstg − 1.8 − µs IB1= −IB2= −10mA
Fall time tf − 1 − µs VCC~ −150V

Rev.B 1/3
 2SA1759
Transistors
zPackaging specifications and hFE
Type 2SA1759
Package MPT3
hFE P
Marking AH∗
Code T100
Basic ordering unit (pieces) 3000
∗ Denotes hFE

zElectrical characteristics (Ta=25°C)

−100 −100 −200
Ta=25°C Ta=25°C VCE=−5V
−0.9mA

A
−0.8mA

COLLECTOR CURRENT : IC (mA)

m
−3.5mA −100

−1
COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

−80 −4.5mA −4mA −80 −0.7mA
−50
−5mA A −0.6mA
−3m A
−2.5
m −20
−60 −2mA −60 −0.5mA
mA −10
−1.5
−1mA −0.4mA
−40 −40

°C
−5

−25°C
25°C
A

Ta=100
−0.5m −0.3mA
−2
−20 −20 −0.2mA
−1
IB=−0.1mA
0 IB=0 0 −0.5
0 1 2 3 4 5 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Ground emitter output characteristics ( Ι ) Fig.2 Ground emitter output characteristics ( ΙΙ ) Fig.3 Ground emitter propagation characteristis

−10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1000 1000
Ta=25°C VCE=−10V Ta=25°C
500 500 −5
Ta=100°C 25°C
VCE=−10V 200 −2
DC CURRENT GAIN : hEF

200
DC CURRENT GAIN : hEF

100 100 −1

5V −25°C
50 50 −0.5
IC/IB=20
20 20 −0.2

10 10 −0.1 10

5 5 −0.05

2 2 −0.02
1 1 −0.01
−0.5 −1 −2 −5 −10 −20 −50 −100 −200 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 −0.5 −1 −2 −5 −10 −20 −50 −100 −200
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs.collector current ( Ι ) Fig.5 DC current gain vs.collector current ( ΙΙ ) Fig.6 Collector-emitter saturation voltage
vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

−10
COLLECTOR SATURATION VOLTAGE :VCE(sat) (V)

1000 1000
IC/IB=10V Ta=25°C Ta=25°C
VCE=−10V f=1MHz
TRANSITION FREQUENCY : fT (MHz)

−5 500 500 IE=0A

BASE SATURATION VOLTAGE :VBE(sat) (V)

−2 200 200
Ta=−25°C 100
−1 VBE(sat) 100

−0.5 50 50
25°C 100°C
−0.2 Ta=100°C 20 20

−0.1 VCE(sat) 10 10
25°C −25°C
−0.05 5 5

−0.02 2 2
−0.01 1 1
0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 200 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50
COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.7 Collector-emitter saturation voltage Fig.8 Gain bandwidth products Fig.9 Collector output capacitance
Base-emitter saturation voltage vs. Collector current vs. emitter current vs. collector-base voltage

Rev.B 2/3
 2SA1759
Transistors

−1000 100000

TRANSIENT THERMAL RESISTANCE : Rth(°C/W)

(1)When mounted on a
−500 40×40×0.7mm ceramic board.
Pw=10ms∗
COLLECTOR CURRENT : IC (mA)

10000 (2)Unmounted
Ic Max. (Pulse∗)
−200
−100 100ms∗ 1000
DC (2)
−50
100
−20 (1)
−10 10

−5 Ta=25°C
(When mounted on a 1
−2 40×40×0.7mm ceramic board)
−1 ∗Single nonrepetitive pulse 0.1
−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 0.001 0.01 0.1 1 10 100 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V) PULSE WIDTH : Pw (s)

Fig.10 Safe operating area Fig.11 Transient thermal resistance

RL=1.5kΩ
Base current IB2
waveform
IB2
TUT
VCC=−150V
Collector current
waveform
10%
IC
90%
VBB
ton tf
tstg

Fig.12 Switching characteristics mesurement circuits

Rev.B 3/3
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1
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