Scribd Logo
Upload

Welcome to Scribd!

  • 4 views

    2sa1036 Galaxy

    Uploaded by

    STRUGGLE KEEP

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2sa1036 Galaxy

    Uploaded by

    STRUGGLE KEEP
    4 views5 pages

    Original Title

    2sa1036_galaxy

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    4 views5 pages

    2sa1036 Galaxy

    Uploaded by

    STRUGGLE KEEP

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SA1036

    FEATURES
    Pb
    z Large IC.ICMAX. =-500mA.
    Lead-free
    z Low VCE(sat). Ideal for low-voltage operation.

    APPLICATIONS
    z Ideal for low-voltage operation.
    SOT-23
    ORDERING INFORMATION
    Type No. Marking Package Code

    2SA1036 HP,HQ,HR SOT-23

    MAXIMUM RATING @ Ta=25℃ unless otherwise specified


    Symbol Parameter Value Units

    VCBO Collector-Base Voltage -40 V

    VCEO Collector-Emitter Voltage -32 V

    VEBO Emitter-Base Voltage -5 V

    IC Collector Current -Continuous -500 mA

    PC Collector Dissipation 200 mW

    Tj,Tstg Junction and Storage Temperature -55~150 ℃

    ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

    Document number: BL/SSSTC012 www.galaxycn.com


    Rev.A 1
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SA1036

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V

    Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V

    Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V

    Collector cut-off current ICBO VCB=-20V,IE=0 -1 μA

    Emitter cut-off current IEBO VEB=-4V,IC=0 -1 μA

    DC current gain hFE VCE=-3V,IC=-10mA 82 390

    Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.4 V

    VCE=-5V, IC=-20mA
    Transition frequency fT 200 MHz
    f=100MHz

    Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF

    CLASSIFICATION OF hFE(1)
    Rank P Q R

    Range 82-180 120-270 180-390

    Document number: BL/SSSTC012 www.galaxycn.com


    Rev.A 2
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SA1036

    TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

    Document number: BL/SSSTC012 www.galaxycn.com


    Rev.A 3
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SA1036

    PACKAGE OUTLINE
    Plastic surface mounted package SOT-23

    SOT-23
    Dim Min Max
    A 2.85 2.95
    B 1.25 1.35
    C 1.0Typical
    D 0.37 0.43
    E 0.35 0.48
    G 1.85 1.95
    H 0.02 0.1
    J 0.1Typical
    K 2.35 2.45
    All Dimensions in mm

    SOLDERING FOOTPRINT

    Unit : mm
    PACKAGE INFORMATION

    Device Package Shipping

    2SA1036 SOT-23 3000/Tape&Reel

    Document number: BL/SSSTC012 www.galaxycn.com


    Rev.A 4
    www.s-manuals.com

    You might also like