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CMP150N03/CMB150N03/CMI150N03

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Sajid Ali
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96 views2 pages

CMP150N03/CMB150N03/CMI150N03

Uploaded by

Sajid Ali
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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CMP150N03/CMB150N03/CMI150N03

N-Channel Enhancement Mode Field Effect Transistor

General Description Product Summery

The 150N03 is N-ch MOSFETs


BVDSS RDSON ID
with extreme high cell density ,
30V 4.5m 120A
which provide excellent RDSON
and gate charge for most of the
Applications
synchronous buck converter
HIGH CURRENT, HIGH SPEED SWITCHING
applications. DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
SOLENOID AND RELAY DRIVERS
AUTOMOTIVE ENVIRONMENT
Features

Simple Drive Requirement TO220 / TO263 / TO262 Pin Configuration

Fast Switching
Low On-Resistance

G GD
D S
S
TO-220 TO-263 G D S TO-262
(CMP150N03) (CMB150N03) (CMI150N03)
Absolute Maximum Ratings

Symbol Parameter Rating Units


VDS Drain-Source Voltage 30 V
VGS Gate-Sou ce Voltage 20 V
1
ID@TC=25 Continuous Drain Current 120 A
2
IDM Pulsed Drain Current 360 A
3
EAS Single Pulse Avalanche Energy 720 mJ
PD Total Power Dissipation 250 W
TSTG Storage Temperature Range -55 to 175
TJ Operating Junction Temperature Range -55 to 175

Thermal Data

Symbol Parameter Typ. Max. Unit


R JA Thermal Resistance Junction-ambient --- 62.5 /W
R JC Thermal Resistance Junction-case --- 0.5 /W

1
CMP150N03/CMB150N03/CMI150N03
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (TJ=25 , unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit


BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V

RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=50A --- --- 4.5 m

VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 --- 3 V


VDS=30V , VGS=0V --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=30V , VGS=0V ,TC=125 --- --- 10
IGSS Gate-Source Leakage Current VGS 20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance 4 VDS=15V , ID=50A --- 150 --- S
Qg Total Gate Charge I D = 120A --- 95 135
Qgs Gate-Source Charge V DD = 24V --- 28 --- nC
Qgd Gate-Drain Charge VGS = 10V --- 35 ---
Td(on) Turn-On Delay Time V DD = 1 5 V --- 30 ---
Tr Rise Time I D = 60A --- 208 ---
ns
Td(off) Turn-Off Delay Time R G =4.7 --- 82 ---
Tf Fall Time V GS=10V --- 45 ---
Ciss Input Capacitance --- 4600 ---
Coss Output Capacitance VDS=25V , VGS=0V , f=1MHz --- 980 --- pF
Crss Reverse Transfer Capacitance --- 115 ---

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit


IS Continuous Source Current --- --- 120 A
VG=VD=0V , Force Current
ISM Pulsed Source Current2 --- --- 360 A
4
VSD Diode Forward Voltage VGS=0V , IS=120A --- --- 1.3 V

Note :
1.Current Limited by Package
2.Pulse width limited by safe operating area
3.Starting Tj = 25°C, Id = 60A, VDD=30 V
4.Pulsed: pulse duration=300μs, duty cycle 1.5%

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