PN Junction Diode

Dr. B. Jailsingh
Adhoc Faculty, Course Instructor
Department of ECE
NATIONAL INSTITUTE OF TECHNOLOGY ANDHRA PRADESH
TADEPALLIGUDEM - 534101
PN Junction Formulation
• A PN junction is a device formed by combining p-type ( doped with B, Al) and
n-type (doped with P, As, Sb) semiconductors together in close contact.

PN junction device
PN Junction
• As free electrons and holes diffuse across the junction, a region of fixed ions is
left behind. This region is known as the “depletion region.”

• The fixed ions in depletion region

create an electric field that results in a
drift current.
PN Junction
 The cause of diffusion is due to the fact that P
side has excess holes and N side has excess
electrons.
 Each of the excess charges diffuse to the other
side across the junction due to attraction.
 This leads to the formation of
electric field and voltage [called Barrier
Potential (VBP)] along BJA.
 This field stops further diffusion of the two
charge forming depleted regions AJ and JB
across J, which then reach equilibrium.
 Finally, CA region contains holes
as majority plus electrons as minority, while AJ
region is left with immobile -VE
acceptor ions.
 Similarly, DB region contains electrons as
majority carriers plus holes
as minority carriers, while BJ region only +VE
immobile donor ions.
 Thus AB region becomes depletion region
depleted of mobile charges. The sample as a
whole remains neutral.
PN Junction working
• PN junction can basically work in two modes,
 forward bias mode (as shown below: positive terminal connected to p-region and
negative terminal connected to n region).
 reverse bias mode ( negative terminal connected to p-region and positive terminal
connected to n region).
V-I Characteristics of a PN Junction Diode
• The total V-I (volt-ampere) characteristics of a PN junction is the curve
between voltage across the junction and the current through it.
• The circuits arrangement to determine the V-I characteristics of a PN
junction.

• With the help of solid-state physics, the diode current equation, relating the
voltage V and current I for the forward- and reverse-bias regions, is given by
V-I Characteristics of a PN Junction Diode
Thus, the characteristics of PN junction diode can be studied by visualization
of the behavior of PN junction under following conditions:
Zero external voltage: When the circuit is open, i.e. the external voltage is zero, the
diffusion of charges across the junction builds in a voltage (VBP), which acts as the
potential barrier, not allowing the current to flow. Therefore, the
circuit current is zero as shown by point ‘O’ in Figure.

Forward Bias: With forward bias to the PN junction, the potential barrier is reduced. After
knee voltage (=VBP), the current increases (≈mA) exponentially with the increase in
forward bias and the curve is therefore nonlinear.

Reverse Bias: With a reverse bias to the PN junction diode, the potential barrier is
increased. Therefore, the junction resistance becomes very high and a very small current
flows in the circuit with reverse bias known as reverse saturation current (I0≈𝜇A) . On
continuously increasing the reverse voltage, breakdown of junction takes place .
Comparison of Silicon and Germanium Diodes
Breakdown Diodes (Avalanche and Zener)

When in normal diodes reverse-bias ‘breakdown’

takes place and a large current flows in reverse
direction, it can cause damage to the diode.
However, it is possible to build a special type of
diode (Avalanche and Zener) that can be operated
in a breakdown region, under controlled current
condition. Here, we discus such type of diodes that
are designed to operate in the breakdown region.
Avalanche breakdown
Zener breakdown
 Zener breakdown takes place in PN junction diode having very thin
depletion region ≈0.1µm and this is when both the sides are heavily
doped (≫5x1017/cc).
 This breakdown can be explained by band theory as well as by atomic
bond theory:
Zener breakdown
Here, in Zener diodes, electric field is slightly higher than in Avalanche
diode, but the free minority electrons do not have enough length to
accelerate for knocking off the electrons of Si atoms, and therefore
avalanche mechanism do not occur here.
Comparison of Zener and Avalanche Breakdown Diode
Comparison of Zener and Avalanche Breakdown Diode
Comparison of Zener and Avalanche Breakdown Diode
Zener Diode as a Voltage Regulator
• Zener diodes find wide commercial and industrial applications.
• The major application of a Zener diode in the electronic circuit is as a
voltage regulator.
• It provides a constant voltage to the load from a source whose voltage
may vary over sufficient range.
The circuit arrangement is shown in figure. • The resistance RS is connected to limit current in the
circuit.
• The output, i.e. regulated voltage is obtained across the
load resistor RL. For the operation of the circuit, the
input
• voltage (VS = Vin) should be greater than Zener diode
voltage (VZ).
• Only then Zener diode operates in breakdown region.

This circuit is also called as Zener diode shunt (voltage)

regulator because the Zener diode is connected in parallel
or shunt with the load.
Zener Diode as a Voltage Regulator
• The ideal Zener diode may be assumed as a constant voltage source of voltage VZ.
• But in case of practical Zener diode, Zener resistance is taken into account.
• Due to this Zener resistance, there is a voltage drop (IZrZ), also in addition to the
voltage across the terminals of Zener diode.
• Therefore, the load voltage may be given as
𝑉𝐿 = 𝑉𝑍 + 𝐼𝑍 𝑟𝑍
• But the Zener resistance rz being very very small (<0.2Ω) may be neglected.
• Therefore, the load voltage is
𝑉𝐿 = 𝑉𝑍
• The current through the load resistance is
𝑉 𝑉
𝐼𝐿 = 𝐿 = 𝑍
𝑅𝐿 𝑅𝐿
• On applying the KCL, the input current will be
𝐼𝑆 = 𝐼𝑍 + 𝐼𝐿
𝐼𝑍 = 𝐼𝑆 − 𝐼𝐿
Rectifiers
 The electrical power is generated, distributed and transmitted as ac for economical reason. But
all most of the electronic circuits need dc voltage power supply for their operation.
 Therefore, a circuit that converts ac voltage of main supply into dc voltage is called rectifier.

 Usually, the rectifier is the heart of power supply. These are classified as follows depending upon the
type of output.
Half-Wave Rectifiers
It converts ac voltage into a pulsating dc voltage and uses only one half of the applied ac
voltage. Figure shows the basic circuit and waveforms of a half-wave rectifier.
Half-Wave Rectifiers
Ripple factor (Γ): The ratio of RMS value of ac component to the dc component in the
output is called ripple factor (Γ).

This being the average of the +ve voltage, is nothing

but the dc voltage i.e., Vdc = Vav = Vm/π.

Therefore,

 If the values of diode forward resistance

(rf) are taken into account, then
Half-Wave Rectifiers
Half-Wave Rectifiers
Efficiency (η) : The ratio of dc output power to ac input power is called rectifier Efficiency (η).
Full-Wave Rectifiers
It converts an ac voltage into a pulsating dc voltage using both half cycles of the applied ac
voltage. There are two types of full-wave rectifier
(i) Centre-tap full-wave rectifier.
(ii) Bridge-type full-wave rectifier.

 This full-wave rectifier uses two diodes of which one diode conducts during
positive half cycle, while the other diode conducts during negative half cycle of
the applied ac voltage of other half winding of the secondary of transformer.
 The basic circuit and waveform of full-wave centre-tapped rectifier is shown in
figure.
 The secondary winding of the transformer has a centre-tap point (C) normally
grounded, with equal number of windings across it
Full-Wave Rectifiers
Full-Wave Rectifiers

Efficiency (η):
Comparison of Rectifiers