BA482

DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D050
BA482; BA483; BA484

Band-switching diodes
Product specification 1996 Apr 17
Supersedes data of January 1982
Philips Semiconductors Product specification
Band-switching diodes BA482; BA483; BA484
FEATURES DESCRIPTION
• Continuous reverse voltage: Planar high performance band-switching diode in a hermetically sealed glass
max. 35 V SOD68 (DO-34) package.
• Continuous forward current:
max. 100 mA
• Low diode capacitance:
max. 1.0 to 1.6 pF k
handbook, halfpage a
• Low diode forward resistance:

MAM156
max. 0.7 to 1.2 Ω.
The diodes are type branded.
APPLICATION
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
• VHF television tuners.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
VR continuous reverse voltage − 35 V
IF continuous forward current − 100 mA
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VF forward voltage IF = 100 mA; see Fig.2 − 1.2 V
IR reverse current see Fig.3
VR = 20V − 100 nA
VR = 20 V; Tamb = 75 °C − 1 µA
Cd diode capacitance f = 1 to 100 MHz; VR = 3 V; see Fig.4
BA482 0.8 1.2 pF
BA483 0.7 1.0 pF
BA484 1.0 1.6 pF
rD diode forward resistance IF = 3 mA; f = 200 MHz; see Fig.5
BA482 0.6 0.7 Ω
BA483 0.8 1.2 Ω
BA484 0.8 1.2 Ω
1996 Apr 17 2
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 300 K/W
Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
Note
1. Device mounted on a FR4 printed-circuit board without metallization pad.
GRAPHICAL DATA
MBG304 MBG303
100
handbook, halfpage 10 5
handbook, halfpage
IR
(1) (2) (3) (nA)
IF 10 4
(mA)
10 3
50
10 2
10
0 1
0 0.5 1 1.5 0 50 100 150
V F (V) Tj ( o C)
(1) Tj = 75 °C; typical values. VR = 20 V.

(2) Tj = 25 °C; typical values. Solid line: maximum values.
(3) Tj = 25 °C; maximum values. Dotted line: typical values.
Fig.2 Forward current as a function of Fig.3 Reverse current as a function of

forward voltage. junction temperature.
1996 Apr 17 3
MBG305 MBG306
1.5 2
handbook, halfpage handbook, halfpage
Cd
(pF) rD
(Ω)
1
BA484
1
BA482
0.5 BA483
BA483/484
BA482
0 0
10−1 1 10 VR (V) 102 1 10 IF (mA) 10 2
f = 1 to 100 MHz; Tj = 25 °C. f = 200 MHz; Tj = 25 °C.
Fig.4 Diode capacitance as a function of reverse Fig.5 Diode forward resistance as a function of
voltage; typical values. forward current; typical values.
1996 Apr 17 4
PACKAGE OUTLINE
handbook, full pagewidth 0.55

max
1.6 3.04
max 25.4 min max 25.4 min
MSA212 - 1
Dimensions in mm.
Fig.6 SOD68; DO-34.
DEFINITIONS
Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Apr 17 5

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DISCRETE SEMICONDUCTORS

BA482; BA483; BA484

Band-switching diodes BA482; BA483; BA484

• Low diode forward resistance:

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Band-switching diodes BA482; BA483; BA484

SYMBOL PARAMETER CONDITIONS VALUE UNIT

(1) Tj = 75 °C; typical values. VR = 20 V.

Fig.2 Forward current as a function of Fig.3 Reverse current as a function of

Band-switching diodes BA482; BA483; BA484

f = 1 to 100 MHz; Tj = 25 °C. f = 200 MHz; Tj = 25 °C.

Band-switching diodes BA482; BA483; BA484

handbook, full pagewidth 0.55

Fig.6 SOD68; DO-34.

Data Sheet Status

LIFE SUPPORT APPLICATIONS

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