BZX84C2V7–BZX84C51

Vishay Telefunken

350 mW Surface Mount Zener Diodes

Features

D Planar die construction

D 350 mW Power dissipation
D Zener voltages from 2.7V – 51V
D Ideally suited for automated assembly processes

94 8550

Absolute Maximum Ratings

Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Power dissipation on ceramic substrate Pd 350 mW
10mm x 8mm x 0.7mm
Zener current (see figures 1–3 below)
Junction and storage Tj=Tstg –55...+150 °C
temperature range

Maximum Thermal Resistance

Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on ceramic substrate 10mm x 8mm x 0.7mm RthJA 420 K/W

Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward Voltage IF=10 mA VF 0.9 V

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Type Marking VZ ZZT @ IZT ZZK @ IZK TC IR @ VR

BZX84C... V W mA W mA %/°C mA V
@ IZT
2V7 KZC 2.5 to 2.9 100 5.0 600 1.0 –0.065 20 1.0
3V0 KZD 2.8 to 3.2 100 5.0 600 1.0 –0.060 10 1.0
3V3 KZE 3.1 to 3.5 95 5.0 600 1.0 –0.055 5.0 1.0
3V6 KZF 3.4 to 3.8 95 5.0 600 1.0 –0.055 5.0 1.0
3V9 KZG 3.7 to 4.1 90 5.0 600 1.0 –0.050 3.0 1.0
4V3 KZH 4.0 to 4.6 90 5.0 600 1.0 –0.035 3.0 1.0
4V7 KZ1 4.4 to 5.0 80 5.0 500 1.0 –0.015 4.0 2.0
5V1 KZ2 4.8 to 5.4 60 5.0 480 1.0 +0.005 2.0 2.0
5V6 KZ3 5.2 to 6.0 40 5.0 400 1.0 +0.020 1.0 2.0
6V2 KZ4 5.8 to 6.6 10 5.0 150 1.0 +0.030 3.0 4.0
6V8 KZ5 6.4 to 7.2 15 5.0 80 1.0 +0.045 2.0 4.0
7V5 KZ6 7.0 to 7.9 15 5.0 80 1.0 +0.050 1.0 5.0
8V2 KZ7 7.7 to 8.7 15 5.0 80 1.0 +0.055 0.7 5.0
9V1 KZ8 8.5 to 9.6 15 5.0 100 1.0 +0.065 0.5 6.0
10 KZ9 9.4 to 10.6 20 5.0 150 1.0 +0.065 0.2 7.0
11 KY1 10.4 to 11.6 20 5.0 150 1.0 +0.070 0.1 8.0
12 KY2 11.4 to 12.7 25 5.0 150 1.0 +0.075 0.1 8.0
13 KY3 12.4 to 14.1 30 5.0 170 1.0 +0.080 0.1 8.0
15 KY4 13.8 to 15.6 30 5.0 200 1.0 +0.080 0.05 0.7VZnom
16 KY5 15.3 to 17.1 40 5.0 200 1.0 +0.090 0.05 0.7VZnom
18 KY6 16.8 to 19.1 45 5.0 225 1.0 +0.090 0.05 0.7VZnom
20 KY7 18.8 to 21.2 55 5.0 225 1.0 +0.090 0.05 0.7VZnom
22 KY8 20.8 to 23.3 55 5.0 250 1.0 +0.090 0.05 0.7VZnom
24 KY9 22.8 to 25.6 70 5.0 250 1.0 +0.090 0.05 0.7VZnom
27 KYA 25.1 to 28.9 80 2.0 300 0.5 +0.090 0.05 0.7VZnom
30 KYB 28 to 32 80 2.0 300 0.5 +0.090 0.05 0.7VZnom
33 KYC 31 to 35 80 2.0 325 0.5 +0.090 0.05 0.7VZnom
36 KYD 34 to 38 90 2.0 350 0.5 +0.090 0.05 0.7VZnom
39 KYE 37 to 41 130 2.0 350 0.5 +0.110 0.05 0.7VZnom
43 KYF 40 to 46 150 2.0 375 0.5 +0.110 0.05 0.7VZnom
47 KYG 44 to 50 170 2.0 375 0.5 +0.110 0.05 0.7VZnom
51 KYH 48 to 54 180 2.0 400 0.5 +0.110 0.05 0.7VZnom

1) Device mounted on ceramic substrate 8mmx10mmx0.7mm

2) VZ measured at IZT using a pulse test. IZ pulse width = 5 ms. Standard voltage tolerance is 5%.

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Characteristics (Tj = 25_C unless otherwise specified)
50 500

Ptot – Total Power Dissipation ( mW )

Tj=25°C C2V7 C3V9 C5V6

C3V3 C4V7 C6V8 See Note 1

40 400
C8V2
I Z – Z-Current ( mA )

30 300

20 200

Test Current Iz
10 5.0mA 100

0 0
0 1 2 3 4 5 6 7 8 9 10 0 100 200
15251 VZ – Z-Voltage ( V ) 15254 Tamb – Ambient Temperature ( °C )

Figure 1. Z–Current vs. Z–Voltage Figure 4. Total Power Dissipation vs.

Ambient Temperature

30 Tj=25°C C10
1000
C D – Diode Capacitance ( pF ) Tj=25°C
C12

VR = 1V

VR = 2V
I Z – Z-Current ( mA )

C15
20

C18
100
Test Current Iz VR = 1V
2.0mA
C22
10 C27
Test Current Iz
5.0mA C33 VR = 2V
C36

0 10
0 10 20 30 40 1 10 100
15255 VZ – Z-Voltage ( V )
15252 VZ – Z-Voltage ( V )

Figure 2. Z–Current vs. Z–Voltage Figure 5. Diode Capacitance vs. Z–Voltage

10 C39 C47
Tj=25°C
C43 C51

8
I Z – Z-Current ( mA )

4
Test Current Iz
2.0mA

0
0 10 20 30 40 50 60 70 80 90 100
15253 VZ – Z-Voltage ( V )

Figure 3. Z–Current vs. Z–Voltage

Document Number 85606 www.vishay.de • FaxBack +1-408-970-5600

Rev. 1, 01-Apr-99 3 (5)
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Vishay Telefunken
Dimensions in mm

top view

14370

Case: SOT23, molded plastic

Mounting position: any
Approx. weight: 0.008 grams

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 85606 www.vishay.de • FaxBack +1-408-970-5600

Rev. 1, 01-Apr-99 5 (5)