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DPP-04 Edc

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11 views3 pages

DPP-04 Edc

Uploaded by

ritusbhopale
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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TARGET : GATE 2024/25

academy

Electronic Devices
Topic : BJT DPP - 04

..Common Data for Q.1 to Q.3..


A uniform doped silicon pnp transistor is biased in the forward-active mode Its geometry has been shown in the
figure below. The doping concentrations are N E  1018 cm3 , N B  5 1016 cm3and NC  1015 cm3 .

Question 1
The thermal equilibrium minority carrier concentrations, nE 0 , pE 0 and nC 0 (in cm-3) is

nE 0 pE 0 nC 0

(A) 2.25 102 2.25  105 4.5 103


(B) 2.25 102 4.5 103 2.25  105
(C) 4.5 103 2.25 102 2.25  105
(D) 4.5 103 2.25  105 2.25 102
Question 2
For VEB  0.650 V , total minority carrier hole concentration, pB at x  0 will be

(A) 4.68 103 cm 3 (B) 7.93 1013 cm 3 (C) 5.54 104 cm 3 (D) 3.57 1014 cm 3
Question 3
For VEB  0.650V , total minority carrier (electron) concentration, nE at x '  0 will be

(A) 1.78  1013 cm 3 (B) 7.911012 cm 3 (C) 2.34 102 cm3 (D) 4.31102 cm 3
Question 4
Consider the transistor shown in figure below.
Target : GATE 2024/25 : DPP-04 2

The mode of operation of the transistor is


(A) reverse active mode (B) cut of mode
(C) forward active mode (D) saturation mode
Question 5
The parameters in the base region of an npn bipolar transistor are Dn  20cm2 / s
nBO  104 cm3 , xB  1 m, and ABE  104 cm2 . The collector current (in  A ) for VBE = 0.5 V is _____
mA.
Question 6
A uniformly doped silicon pnp bipolar transistor at T=300 K with doping of N E  5 1017 cm3 ,
N B  1016 cm3 and NC  5 1014 cm 3 is biased in the inverse-active mode. The maximum B-C voltage
(in-volt) so that the low-injection condition applied is ______.
Question 7
The collector current of a n-p-n transistor operating at 300K is 2 mA. Other device parameters are given
as   1, ni  1.5 1010 cm3 , VT  26mV . If the base emitter voltage is increased by 0.052 V then the
value of new collector current will be ______ 10 3 A (up to 2 decimal places).
Question 8
Consider the transistor whose IC-VCE Curves are shown in figure.

The value of early voltage (in V) is


(A) 11 (B) 0.5 (C) 100 (D) – 20
Question 9
3 Target : GATE 2024/25 : DPP-04
The collector current of bipolar is iC  2mA if the output resistance is greater than 10kΩ. The value of
early voltage VA for the transistor is
(A) VA  20V (B) VA  10V (C) VA  10V (D) VA  20V
Question 10
Consider two BJTS biased at the same collector current with area
A1  0.2 m  0.2 m and A2  300 m  300 m
Assuming that all other device prameters are identical, kT/q = 26mV, the intrinsic carrier concentration
is 1 1010 cm 3 and q  1.6 1019 C , the difference between the base-emitter voltages (in mV) of the two
BJTS (i.e. VBE1  VBE2 ) is _______.
Question 11
A uniformly doped silicon pnp bipolar transistor at T = 300K with dopings of
N E  5 1017 cm3 , N B  1016 cm3 and NC  5 1014 cm 3 is biased in the inverse-active mode. The
maximum B-C voltage (in volt) so that the low-injection condition applied is ______.

..Common Data for Q.12 to Q.13..


A Si pnp BJT with N AE  5 1017 / cm3 , N DB  1015 / cm3 , N AC  1014 / cm3 and WB  3 m is maintained
under equilibrium conditions at room temperature.
Question 12
The net potential difference (in volt) between the collector and emitter is ______.
Question 13
If built in potential of E-B junction is 0.757 V, then the maximum magnitude of the electric field in the
E-B depletion region is_____ 104 V/cm .
Question 14
Consider a Si pnp BJT with N DE  1018 / cm3 , N AB  1016 / cm3 , N DC  1015 / cm3 .The net potential
difference between the collector and emitter is_____ V.
Question 15
A Si n-p-n transistor is biased in forward active mode at quiescent point Q (6V, 3mA) and has a total
emitter base capacitance of 25 pF with base transit time of 520 psec. Values of diffusion and depletion
capacitances respectively are
(A) 15 pF, 10 pF (B) 5 pF, 20 pF (C) 20 pF, 5 pF (D) 22pF, 3pF

Answer Key
1. B 2. D 3. A 4. C 5. 7.75

6. 0.48 7. 14.77 8. A 9. D 10. 280.28

11. 0.48 12. – 0.179 13. 1.52 14. 0.221 15. C



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