STTH 506 D

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® STTH506DTI

Tandem 600V HYPERFAST BOOST DIODE

MAJOR PRODUCTS CHARACTERISTICS


1 2
IF(AV) 5A
VRRM 600 V
Tj (max) 150 °C
VF (max) 2.4 V
IRM (typ.) 3.6 A
2
trr (typ.) 12 ns 1

Insulated TO-220AC
FEATURES AND BENEFITS
■ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING DESCRIPTION
CONDITIONS The TURBOSWITCH “H” is an ultra high
■DESIGNED FOR HIGH dIF/dt OPERATION. performance diode composed of two 300V dice in
HYPERFAST RECOVERY CURRENT TO series. TURBOSWITCH “H” family drastically cuts
COMPETE WITH SiC DEVICES. ALLOWS losses in the associated MOSFET when run at
DOWNSIZING OF MOSFET AND HEATSINKS high dIF/dt.
■INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
■INSULATION (2500VRMS) ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK
■STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
■Package Capacitance: C=7pF
ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit


VRRM Repetitive peak reverse voltage 600 V
IF(RMS) RMS forward current 14 A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 60 A
Ipeak Peak current waveform δ = 0.15 Tc = 140°C 8 A
Tstg Storage temperature range -65 +150 °C
Tj Maximum operating junction temperature + 150 °C

October 2003 - Ed: 2A 1/5


STTH506DTI

THERMAL AND POWER DATA


Symbol Parameter Test conditions Value Unit
Rth (j-c) Junction to case thermal resistance 3.0 °C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit


IR * Reverse leakage current VR = VRRM Tj = 25°C 6 µA

Tj = 125°C 8 60

VF ** Forward voltage drop IF = 5 A Tj = 25°C 3.6 V

Tj = 150°C 1.95 2.4


Pulse test : * tp = 100 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 1.7 x IF(AV) + 0.14 IF2(RMS)

DYNAMIC CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit


trr Reverse recovery IF = 0.5 A Irr = 0.25 A Tj = 25°C 12 ns
time IR = 1 A
IF = 1 A dIF/dt = - 50 A/µs 25
VR = 30 V
IRM Reverse recovery VR = 400 V IF = 5 A Tj = 125°C 3.6 4.5 A
current dIF/dt = -200 A/µs
S Reverse recovery 0.4 -
softness factor
Qrr Reverse recovery 45 nC
charges

TURN-ON SWITCHING CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit


tfr Forward recovery IF = 5 A dIF/dt = 100 A/µs Tj = 25°C 100 ns
time VFR = 1.1 x VF max
VFP Transient peak IF = 5 A dIF/dt = 100 A/µs Tj = 25°C 7 V
forward recovery
voltage

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STTH506DTI

Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward
current.

P(W) IFM(A)
20 100
δ = 0.1 δ = 0.2
18 90
δ = 0.5
16 80
Tj=125°C
δ = 0.05 (maximum values)
14 70

12 δ=1 60
Tj=125°C
(typical values)
10 50
Tj=25°C
8 40 (maximum values)

6 30
T
4 20

2 10
IF(AV)(A) δ=tp/T tp VFM(V)
0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8

Fig. 3: Relative variation of thermal impedance Fig. 4: Peak reverse recovery current versus
junction to case versus pulse duration. dIF/dt (typical values).

Zth(j-c)/Rth(j-c) IRM(A)
1.0 9
VR=400V
0.9 8 Tj=125°C IF=2 x IF(AV)

0.8
7 IF=IF(AV)

0.7 IF=0.5 x IF(AV)


6
δ = 0.5
0.6 IF=0.25 x IF(AV)
5
0.5
4
0.4 δ = 0.2
3
0.3 δ = 0.1
T
2
0.2
Single pulse
0.1 1
tp(s) δ=tp/T tp dIF/dt(A/µs)
0.0 0
1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500

Fig. 5: Reverse recovery time versus dIF/dt Fig. 6: Reverse recovery charges versus dIF/dt
(typical values). (typical values).

trr(ns) Qrr(nC)
50 100
VR=400V VR=400V IF=2 x IF(AV)
45 Tj=125°C 90 Tj=125°C
IF=2 x IF(AV)
40 80 IF=IF(AV)
IF=IF(AV)
35 IF=0.5 x IF(AV) 70

30 60
IF=0.5 x IF(AV)

25 50

20 40

15 30

10 20

5 10
dIF/dt(A/µs) dIF/dt(A/µs)
0 0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500

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STTH506TDI

Fig. 7: Reverse recovery softness factor versus Fig. 8: Relative variation of dynamic parameters
dIF/dt (typical values). versus junction temperature (reference: Tj = 125°C).

S
0.60 2.50
IF=IF(AV)
IF=IF(AV) 2.25 VR=400V
VR=400V Reference: Tj=125°C
Tj=125°C
2.00
0.50 S
1.75

1.50

1.25
0.40
1.00

0.75 IRM

0.30 0.50

0.25 Tj(°C)
dIF/dt(A/µs) 0.00
0.20 25 50 75 100 125
0 50 100 150 200 250 300 350 400 450 500

Fig. 9: Transient peak forward voltage versus Fig. 10: Forward recovery time versus dIF/dt
dIF/dt (typical values). (typical values).

VFP(V) tfr(ns)
16 200
15 IF=IF(AV) IF=IF(AV)
Tj=125°C 180 VFR=1.1 x VF max.
14 Tj=125°C
13 160
12
11 140
10
120
9
8 100
7
80
6
5 60
4
3 40
2
20
1 dIF/dt(A/µs) dIF/dt(A/µs)
0 0
0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500

Fig. 11: Junction capacitance versus reverse


voltage applied (typical values).

C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C

10

VR(V)
1
1 10 100 1000

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STTH506DTI

PACKAGE MECHANICAL DATA


TO-220AC

DIMENSIONS
B C
b2 REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
L
A 15.20 15.90 0.598 0.625
F
a1 3.75 0.147
I
a2 13.00 14.00 0.511 0.551
A B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
l4 b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
a1 c2
c2 2.40 2.72 0.094 0.107
e 4.80 5.40 0.189 0.212
l2
a2 F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
b1 M
c1
l2 1.14 1.70 0.044 0.066
e
M 2.60 0.102

Ordering code Marking Package Weight Base qty Delivery mode


STTH506DTI STTH506DTI TO-220AC 2.3 g. 50 Tube
■ Cooling method: C
■ Recommended torque value: 0.8 N.m.
■ Maximum torque value: 1 N.m.
■ Epoxy meets UL94,V0

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
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