9916H N-Mosfet
9916H N-Mosfet
9916H N-Mosfet
kr
AP9916H/J
Description
G
D
S TO-251(J)
Thermal Data
Symbol Parameter Value Unit
Rthj-c Thermal Resistance Junction-case Max. 2.5 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
AP9916H/J
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 35 A
1
ISM Pulsed Source Current ( Body Diode ) - - 90 A
2
VSD Forward On Voltage Tj=25℃, IS=35A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9916H/J
100 80
T C =25 o C 70
T C =150 o C V G =4.5V
V G =4.5V
80
60
V G =3.5V
V G =3.5V
50
60
40
V G =2.5V V G =2.5V
40
30
20
20
V G =1.5V
10
V G =1.5V
0
0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8
V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)
1.8
30
I D= 6 A I D =6A
1.6
28 o V G =4.5V
T C =25 C
1.4
Normalized R DS(ON)
26
RDS(ON) (mΩ )
1.2
24
1.0
22
0.8
20
0.6
18
1 2 3 4 5 6 -50 0 50 100 150
V GS (V)
T j , Junction Temperature ( o C)
AP9916H/J
40 60
35
50
30
ID , Drain Current (A)
40
25
PD (W)
20 30
15
20
10
10
5
0
0
25 50 75 100 125 150
0 50 100 150
T c , Case Temperature ( C) o
T c , Case Temperature ( o C)
1000 1
DUTY=0.5
Normalized Thermal Response (R thjc)
100
10us
0.2
100us
ID (A)
0.1
10 1ms 0.1
0.05
10ms PDM
0.02
SINGLE PULSE
100ms t
0.01 T
1
Single Pulse
0.1
0.01
0.1 1 10 100
0.00001 0.0001 0.001 0.01 0.1 1
V DS (V) t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
AP9916H/J
f=1.0MHz
16 1000
14 I D =18A
Ciss
VGS , Gate to Source Voltage (V)
12 V DS =10V
Coss
V DS =15V
10
V DS =18V
C (pF)
8
100 Crss
0
0 5 10 15 20 25 30 35 40 45 10
1 5 9 13 17 21 25
Q G , Total Gate Charge (nC) V DS (V)
100 1.2
10 0.95
o
T j =150 C
T j =25 o C
VGS(th) (V)
IS (A)
1 0.7
0.1 0.45
0.01 0.2
0 0.4 0.8 1.2 1.6 -50 0 50 100 150
V SD (V) T j , Junction Temperature ( o C )
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
AP9916H/J
VDS
RD 90%
VDS TO THE
D OSCILLOSCOPE
10%
+ S
5v
VGS
VGS
-
td(on) tr td(off) tf
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
VG
VDS
TO THE QG
D OSCILLOSCOPE
5V
RATED VDS
G QGS QGD
S VGS
+
1~ 3 mA
-
IG ID
Charge Q
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform