SQ2309CES

www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
SOT-23 (TO-236)
• TrenchFET® power MOSFET
D • AEC-Q101 qualified
3 • 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
2
www.vishay.com/doc?99912
S
S
1
G
Top View

Marking code: 9NYXX

G

PRODUCT SUMMARY
VDS (V) -60
RDS(on) max. () at VGS = -10 V 0.335 P-Channel MOSFET
RDS(on) max. () at VGS = -4.5 V 0.500
D
ID (A) -1.7
Configuration Single

ORDERING INFORMATION
Package SOT-23
SQ2309CES
Lead (Pb)-free and halogen-free
(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -60
V
Gate-source voltage VGS ± 20
TC = 25 °C -1.7
Continuous drain current ID
TC = 125 °C -1
Continuous source current (diode conduction) IS -2.6 A
Pulsed drain current a IDM -6.8
Single pulse avalanche current IAS -6.8
L = 0.1 mH
Single pulse avalanche energy EAS 2.3 mJ
TC = 25 °C 2
Maximum power dissipation PD W
TC = 125 °C 0.6
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount b RthJA 166
°C/W
Junction-to-foot (drain) RthJF 73
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. When mounted on 1" square PCB (FR4 material)

S23-0082-Rev. A, 20-Feb-2023 1 Document Number: 62211

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQ2309CES
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -60 - -
V
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VGS = 0 V VDS = -60 V - - -1
Zero gate voltage drain current IDSS VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50 μA
VGS = 0 V VDS = -60 V, TJ = 175 °C - - -150
On-state drain current a ID(on) VGS = -10 V VDS  -5 V -5 - - A
VGS = -10 V ID = -1.25 A - 0.268 0.370
VGS = -10 V ID = -1.25 A, TJ = 125 °C - - 0.567
Drain-source on-state resistance a RDS(on) 
VGS = -10 V ID = -1.25 A, TJ = 175 °C - - 0.704
VGS = -4.5 V ID = -1 A - 0.354 0.500
Forward transconductance b gfs VDS = -5 V, ID = -1 A - 1.8 - S
Dynamic b
Input capacitance Ciss - 211 265
Output capacitance Coss VGS = 0 V VDS = -25 V, f = 1 MHz - 30 40 pF
Reverse transfer capacitance Crss - 21 30
Total gate charge c Qg - 5.5 8.5
Gate-source charge c Qgs VGS = -10 V VDS = -30 V, ID = -1 A - 0.8 - nC
Gate-drain charge c Qgd - 1.3 -
Gate resistance Rg f = 1 MHz 2.7 5.40 14.80 
Turn-on delay time c td(on) - 5 8
Rise time c tr VDD = -30 V, RL = 30  - 9 14
ns
Turn-off delay time c td(off) ID  -3 A, VGEN = -10 V, Rg = 1  - 12 18
Fall time c tf - 9 14
Source-Drain Diode Ratings and Characteristics b

Pulsed current a ISM - - -6.8 A

Forward voltage VSD IF = -1.5 A, VGS = 0 V - -0.85 -1.2 V
Body diode reverse recovery time trr - 23 46 ns
Body diode reverse recovery charge Qrr - 24 48 nC
IF = -1.2 A, di/dt = 100 A/μs
Reverse recovery fall time ta - 20 -
ns
Reverse recovery rise time tb - 3 -
Body diode peak reverse recovery current IRM(REC) - -3.1 - A
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature


Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.


S23-0082-Rev. A, 20-Feb-2023 2 Document Number: 62211

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQ2309CES
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Axis Title Axis Title

10 10000 10 10000
VGS = 10 V thru 6 V TC = 125 °C
TC = 25 °C
8 8
VGS = 5 V
ID - Drain Current (A)

ID - Drain Current (A)

TC = -55 °C
1000 1000
6 6

2nd line

2nd line
1st line

1st line
2nd line

2nd line
4 4
VGS = 4 V 100 100

2 2

VGS = 3 V
0 10 0 10
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

Axis Title Axis Title

5 10000 1.0 10000

4 0.8
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)

TC = -55 °C
1000 1000
TC = 25 °C VGS = 4.5 V
3 0.6

2nd line
2nd line

1st line
1st line
2nd line

2nd line

2 0.4
TC = 125 °C 100 100

1 0.2 VGS = 10 V

0 10 0 10
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1.6 3.2 4.8 6.4 8.0
ID - Drain Current (A) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

Axis Title Axis Title

500 10000 10 10000
ID = 1 A,
VDS = 30 V
VGS - Gate-to-Source Voltage (V)

400 8
C - Capacitance (pF)

1000 1000
2nd line
1st line

300 6
2nd line
1st line
2nd line

2nd line

Ciss

200 4
100 100

100 Coss 2

Crss
0 10 0 10
0 10 20 30 40 50 60 0 2 4 6 8
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

S23-0082-Rev. A, 20-Feb-2023 3 Document Number: 62211

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQ2309CES
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Axis Title Axis Title

2.5 10000 100 10000
ID = 1.25 A
RDS(on) - On-Resistance (Normalized)

2.1
10

IS - Source Current (A)

VGS = 10 V
1000 1000
TJ = 150 °C
1.7

2nd line

2nd line
1st line

1st line
2nd line
2nd line

1
VGS = 4.5 V
1.3
100 TJ = 25 °C 100
0.1
0.9

0.5 10 0.01 10
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage

Axis Title Axis Title

1.0 10000 1.0 10000

0.8 0.7
RDS(on) - On-Resistance (Ω)

ID = -250 μA
VGS(th) - Variance (V)

1000 1000
0.6 0.4
2nd line

2nd line
1st line

1st line
2nd line
2nd line

TJ = 150 °C ID = -5 mA
0.4 0.1
100 100
TJ = 25 °C
0.2 -0.2

0 10 -0.5 10
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 175
VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage Threshold Voltage

Axis Title
-55 10000
VDS - Drain-to-Source Voltage (V)

ID = -1 mA
-60

1000
-65
2nd line
1st line
2nd line

-70
100

-75

-80 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)

Drain Source Breakdown vs. Junction Temperature

S23-0082-Rev. A, 20-Feb-2023 4 Document Number: 62211

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQ2309CES
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Axis Title
100 10000

10 IDM limited

ID - Drain Current (A)

1000
100 μs

2nd line
1st line
2nd line 1
Limited by RDS(on) a
1 ms

10 ms
100
0.1
100 ms
BVDSS limited
TC = 25 °C, 1 s, 10 s, DC
single pulse
0.01 10
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)

Safe Operating Area

Note
a. VGS > minimum VGS at which RDS(on) is specified

1
Duty cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:

0.1 PDM
0.1
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - T A = PDMZthJA(t)
Single pculse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

S23-0082-Rev. A, 20-Feb-2023 5 Document Number: 62211

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SQ2309CES
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

1
Normalized Effective Transient

Duty cycle = 0.5

Thermal Impedance

0.2
0.1
0.1

0.05

0.02

Single pulse

0.01
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Notes
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62211.

S23-0082-Rev. A, 20-Feb-2023 6 Document Number: 62211

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
Vishay Siliconix

SOT-23 (TO-236): 3-LEAD

3
E1 E
1 2

S e

e1

0.10 mm
C
0.004" C 0.25 mm
A A2 q
Gauge Plane
Seating Plane Seating Plane
A1 C
L
L1

MILLIMETERS INCHES
Dim
Min Max Min Max
A 0.89 1.12 0.035 0.044
A1 0.01 0.10 0.0004 0.004
A2 0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E1 1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e1 1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L1 0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3° 8° 3° 8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

Document Number: 71196 www.vishay.com

09-Jul-01 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SOT-23

0.037 0.022
(0.950) (0.559)
(2.692)

(1.245)
0.106

0.049
(0.724)
0.029

0.053
(1.341)

0.097
(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72609 www.vishay.com

Revision: 21-Jan-08 25
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Revision: 01-Jul-2024 1 Document Number: 91000

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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