Code No: R2021022 R20 SET - 1
II B. Tech I Semester Regular/Supplementary Examinations, January-2023
ELECTRONIC DEVICES AND CIRCUITS
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 70
Answer any FIVE Questions, each Question from each unit
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~
UNIT-I
1 a) Derive an expression for Fermi level in n – type semiconductor. [7M]
b) Discuss about the current components of a PN Junction Diode and derive the [7M]
diode current equation.
OR
2 a) Explain the formation of a potential barrier in a p-n junction and show the [7M]
polarity of the Barrier potential.
b) What is diffusion capacitance in PN junction diode? Derive its equation. [7M]
UNIT-II
3 a) Show that the Zener Diode can act as a voltage regulator with a neat circuit [7M]
diagram.
b) Derive an expression for ripple factor of multiple L – section filter. [7M]
OR
4 a) Explain the Tunnel diode characteristics using energy band diagram. [7M]
b) Draw the circuit diagram of a Half Wave Rectifier and explain its operation with [7M]
the help of waveforms.
UNIT-III
5 a) Draw and explain the output characteristics of PNP type BJT of CE [7M]
configuration and indicate various regions of operation.
b) Explain how FET acts as a voltage variable resistor with neat sketches. [7M]
OR
6 a) Sketch the input and output characteristics of CB configuration and mark the cut [9M]
off region, saturation region and active region from output characteristic.
b) How FET will be operated as an amplifier? [5M]
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Code No: R2021022 R20 SET - 1
UNIT-IV
7 a) List the different types of Biasing a Transistor and explain the Fixed Bias of a [7M]
Transistor.
b) Calculate the values of Resistors in a fixed bias circuit using the following [7M]
specifications: ICQ=9.2mA, VCEQ=4.4V, hfe=1115, VBE=0.7V and VCC=9V.
OR
8 a) Determine the expression for stability factor ‘S’ for fixed bias circuit and list its [7M]
disadvantages.
b) Define and Explain Thermal Runaway and Thermal Resistance. [7M]
UNIT-V
9 For the transistor amplifier shown below, Compute AI = Io / Ii, Av, Avs and Ri. [14M]
Assume hie = 1100 ohms, hfe = 50 , hre = 2.5 X 10-4 , hoe = 24 μA/V
OR
10 a) How to determine h-parameters of BJT using V-I characteristics curves? Explain [7M]
each parameter.
b) With neat sketch explain the characteristics of common emitter amplifier. [7M]
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Code No: R2021022 R20 SET - 2
II B. Tech I Semester Regular/Supplementary Examinations, January-2023
ELECTRONIC DEVICES AND CIRCUITS
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 70
Answer any FIVE Questions, each Question from each unit
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~
UNIT-I
1 a) What is minority carrier concentration? Express minority carrier concentration in [7M]
p – type semiconductor.
b) Explain Breakdown mechanisms in PN Junction Diode. [7M]
OR
2 a) Explain in detail about continuity equation. [7M]
b) Derive the expression for transition capacitance of a PN Junction Diode. [7M]
UNIT-II
3 a) Draw the V-I characteristics of SCR for different value of Gate – Currents. [7M]
b) What is the need of filter? Explain the working of full wave rectifier with [7M]
L-section filter.
OR
4 a) Explain the construction and operation of Photo diode. [7M]
b) Explain the working of a half-wave rectifier with necessary waveforms and [7M]
derive the expression for the ripple factor.
UNIT-III
5 a) Explain about Early effect. What are its consequences? [7M]
b) Explain the NMOS depletion mode transistor action for different conditions of [7M]
Vds.
OR
6 a) Compare CB, CC, CE configuration of a Bipolar transistor. [7M]
b) Draw the Drain characteristics of N-Channel MOSFET for different values of [7M]
VGS to operate either in enhancement mode or in the depletion mode. From these
characteristics obtain transfer curve for a fixed Vds and indicate enhancement
and depletion region.
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Code No: R2021022 R20 SET - 2
UNIT-IV
7 a) Explain self bias of a Transistor with neat circuit diagram and determine [7M]
Q-point.
b) What is thermal runaway and what is the condition for thermal stability in CE [7M]
configuration?
OR
8 a) Design a collector to base bias circuit for the specified conditions: Vcc = 15V, [7M]
VCE = 5V, IC = 5mA and β = 100.
b) Explain Diode Compensation Technique for the parameters of VBE and ICO. [7M]
UNIT-V
9 a) Find expressions for voltage gain, current gain, Input impedance and output [7M]
impedances of CB amplifier using simplified hybrid model.
b) What are the benefits of h-parameters? Discuss how h–parameters can be [7M]
obtained from transistor characteristics?
OR
10 a) Give the comparison of CE, CC and CB amplifiers with respect to voltage gain [7M]
current gain, Input impedance and output impedance.
b) Explain in detail about the CS Amplifier without Bypass capacitor. [7M]
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Code No: R2021022 R20 SET - 3
II B. Tech I Semester Regular/Supplementary Examinations, January-2023
ELECTRONIC DEVICES AND CIRCUITS
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 70
Answer any FIVE Questions, each Question from each unit
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~
UNIT-I
1 a) Explain in detail about continuity equation. [7M]
b) A PN junction germanium diode has a reverse saturation current of 0.10 µA at [7M]
the room temperature of 270C. It is observed to be 30µA, when the room
temperature is increased. Calculate the new room temperature. Also determine
the current passing through the diode at this new temperature.
OR
2 a) The mobility of free electrons and holes in pure Ge are 3800, 1800 Cm2/V-sec. [7M]
The corresponding values for pure Si are 1300 and 500 Cm2/V-sec. Determine
the values of intrinsic conductivity for both Ge & Si. Assume ni = 2.5X1013 cm-3
for Ge and ni = 1.5X1013 cm-3 for Si at room temperature.
b) Discuss about the forward and reverse resistances of a PN junction diode. [7M]
UNIT-II
3 a) Distinguish between Zener and avalanche breakdown mechanisms. [7M]
b) A silicon diode having internal resistance is 20Ω is used for HWR. If the applied [7M]
voltage is 50Sin(ωt) and load resistance is 800Ω. Find
(i) Im, Idc , Irms
(ii) ac input and dc output power
(iii) DC output voltage and efficiency
OR
4 a) Explain the operation of UJT with neat sketches. [7M]
b) Draw the circuit of a bridge-rectifier circuit with shunt capacitance filter and [7M]
derive expressions for the ripple factor. Sketch the input and output wave forms.
UNIT-III
5 a) What is base width modulation? Explain in detail. [7M]
b) Discuss about the construction and operation of JFET. [7M]
OR
6 a) What is Ebers-Moll equation? How is collector current effected by temperature [7M]
in the Ebers-moll model of transistor?
b) What is Pinch-off voltage? What is it significance? Explain. [7M]
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Code No: R2021022 R20 SET - 3
UNIT-IV
7 a) In an NPN transistor if β = 50 is used in common emitter circuit with VCC = 10V [7M]
and RC = 2K Ohm. The bias is obtained by connecting 100K Ohm resistor from
collector to base. Find the operating point.
b) Explain diode compensation circuit for variations in VBE for self-bias circuit. [7M]
OR
8 a) Derive an expression for stability factor S| of a BJT with Common emitter circuit [7M]
in self-bias.
b) For a self-bias circuit with VCC = 22.5V, RC = 5.6KΩ, R1=90KΩ, hfe=55, [7M]
VBE=0.6V. Determine the operating point and stability factor by assuming the
transistor operated in active region.
UNIT-V
9 A CE amplifier is driven by a voltage source of internal resistance, Rs = 1000Ω [14M]
and the load impedance of RC=2kΩ. The h-parameters are hie=1.3k, hfe=55,
hoe = 22µA/V and hre = 2 x10-4. Neglecting biasing resistors. Estimate the value
of current gain, voltage gain, input impedance, output impedance for the value of
emitter resistor RE = 200Ω inserted in the emitter circuit.
OR
10 a) Explain the CB Amplifier by using approximate model in terms of Voltage gain, [7M]
Current gain, Input resistance and Output resistance.
b) With neat sketch, explain the characteristics of common emitter amplifier. [7M]
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Code No: R2021022 R20 SET - 4
II B. Tech I Semester Regular/Supplementary Examinations, January-2023
ELECTRONIC DEVICES AND CIRCUITS
(Electrical and Electronics Engineering)
Time: 3 hours Max. Marks: 70
Answer any FIVE Questions, each Question from each unit
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~
UNIT-I
1 a) Compare conductors, insulators and semiconductors type of materials based on [7M]
energy band theory.
b) Explain P-N Junction diode action under forward bias and reverse bias [7M]
conditions with a neat V-I Characteristics.
OR
2 a) For a silicon, carrier concentration at absolute temperature is 1.5X1010/ cm3, [7M]
mobility of free electrons µ n = 1300 cm2/V-Sec and µ p = 500 cm2/V-Sec.
Number of silicon atoms per unit volume is 5X1022. Find
(i) The conductivity of donor impurity of 1 in 108
(ii) The conductivity of acceptor impurity of 1 in 5X107
b) Derive an expression for diffusion capacitance of a p-n junction diode. [7M]
UNIT-II
3 a) Draw the circuit symbol and label the terminals of UJT. Justify name Uni- [7M]
Junction Transistor.
b) Draw the circuit diagram of a Full-wave rectifier and derive expressions for Idc, [7M]
Irms, Pac, ηr. Sketch the relevant input and output wave forms.
OR
4 a) What is LED? How does an LED works? List five applications of LEDs. [7M]
b) With the help of a neat diagram, explain the operation of a Bridge Rectifier. [7M]
What is PIV for the diode used here?
UNIT-III
5 a) Explain the construction of NPN transistor with a neat diagram. [7M]
b) List out the comparisons between BJT, JFET and MOSFET. [7M]
OR
6 a) Derive transistor current relation in CB configuration. [7M]
b) Explain the construction and working principle of N-Channel JFET. [7M]
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Code No: R2021022 R20 SET - 4
UNIT-IV
7 a) For a Collector to base bias configuration, derive expression for the stability [7M]
factor S.
b) What is thermal runaway? Derive the condition for thermal stability in CE [7M]
configuration.
OR
8 a) For the circuit shown in the figure, determine the operating point with β = 100. [7M]
b) Discuss about the biasing of FET. [7M]
UNIT-V
9 a) Draw the hybrid model for a transistor in CE configuration and derive its hybrid [7M]
parameters.
b) Differentiate between CE, CB and CC amplifiers. [7M]
OR
10 a) A CE amplifier is driven by a voltage source of internal resistance Rs = 800Ω [7M]
and the load impedance of RL=1000Ω. The h-parameters are hie=1k, hfe=50,
hoe = 25µA/V and hre = 2 x 10-4. Find current gain, voltage gain, input
impedance and output impedance using exact analysis.
b) Draw the small signal model of FET. [7M]
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