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Transistor Models Small Signal Ac Analysis: - The Is Used To Perform A of A Number of Standard

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0% found this document useful (0 votes)
85 views48 pages

Transistor Models Small Signal Ac Analysis: - The Is Used To Perform A of A Number of Standard

Uploaded by

robelassefa708
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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3.

5: Small Signal BJT Amplifiers and Parametric


Representations
Introduction
• The transistor models is used to perform a small
signal ac analysis of a number of standard
transistor network configurations.

• The networks analyzed represent the majority of


those appearing in practice today.

• Modifications of the standard configurations will be


relatively easy to examine.
Contd…
BJT Transistor Modeling
• A model is an equivalent circuit that represents
the AC characteristics of the transistor.

• A model uses circuit elements that approximate


the behavior of the transistor.

• There are two models commonly used in small


signal AC analysis of a transistor:

re model
Hybrid equivalent model
The re Transistor Model
•BJTs are basically current-controlled devices;

•Therefore the re model uses a diode and a current


source to duplicate the behavior of the transistor.

•Recall that a current-controlled current source is one


where the parameters of the current source are
controlled by a current elsewhere in the network.
•In fact, in general:

BJT transistor amplifiers are referred to as


current-controlled devices.
Common-Base Configuration
• Recall from Chapter 2 that the ac resistance of a
diode can be determined by the equation
rac =26 mV/ID,
• where ID is the dc current through the diode at
the Q (quiescent) point.
• The same equation can be used to find the ac
resistance of the diode in the re model;
– if we simply substitute the emitter current instead of
diode current
Contd…
26 mV
I c  I e re 
Ie

Input impedance:
Z i  re

Output impedance:
Z o  

Voltage gain:
R L R L
AV  
re re

Current gain:
A i    1

Figure 3.31 (a) Common-Base BJT transistor;


(b) approximate model for the configuration
Contd…
• Due to the isolation that exists between input
and output circuits,
• the input impedance Zi for the common-base
configuration of a transistor is simply re.
• That is,

• The output impedance is;


Contd…
• The output resistance of the common-base
configuration is determined by the slope of the
characteristic lines of the output characteristics.

• Assuming the lines to be perfectly horizontal (an


excellent approximation) would result an
infinite output impedance.

• If care were taken to measure Zo graphically or


experimentally, levels typically in the range 1- to
2-MΩ would be obtained.
Contd…
The voltage gain will now be as;
Common-Emitter Configuration
• For the common-emitter configuration;

– the input terminals are the base and emitter


terminals,
– but the output set is now the collector and
emitter terminals.

• In addition, the emitter terminal is now common


between the input and output ports of the
amplifier.
Contd…
• Substituting the re model equivalent circuit for the
npn transistor;

– It result that the controlled-current source is still


connected between the collector and base
terminals
– and the diode between the base and emitter
terminals.
Contd…

Figure 3.32 (a) Common-emitter BJT transistor; (b)


approximate model for the configuration
Contd…
• In this configuration, the base current is the input
current , while the output current is still Ic.
• the base and collector currents are related by the
following equation:

• However, since the ac beta is typically much greater


than 1, we will use the following approximation for
the current analysis:
Contd…

• The voltage Vbe is across the diode resistance as


shown in Figure below.
• The level of re is still determined by the dc current
Ie.
• Using Ohm’s law gives
Contd…

Determining Zi using
the approximate model.
Contd…
• For the output impedance, the characteristics of
interest are the output set of characteristics.
• Note that the slope of the curves increases with
increase in collector current.
• The steeper the slope, the less the level of output
impedance (Zo).

• The output impedance is;


Contd…

Defining ro for the common-emitter configuration


Contd…
• The voltage gain for the common-emitter
configuration will now be determined for the
configuration of Figure shown below.
• using the assumption that Zo =∞Ω
• For the defined direction of Io and polarity of Vo

Vo=-IoRL

Figure 3.33: Determining the voltage and current gain for the
common-emitter transistor amplifier.
Contd…

• The resulting minus sign for the voltage gain reveals


that the output and input voltages are 180° out of
phase.
• The current gain is;
Contd…
• The common-emitter configuration has;
– a moderate level of input impedance,

– a high voltage and current gain,

– and an output impedance that may have to be


included in the network analysis.
Contd…

Figure 3.34: re model for the common-emitter


transistor configuration.
Common-Collector Configuration
• For the common-collector configuration,

– The model defined for the common-emitter


Configuration is normally applied;

– rather than defining a model for the common-


collector configuration.
The Hybrid Equivalent Model
The following hybrid parameters are developed
and used for modeling the transistor.
These parameters can be found on the
specification sheet for a transistor.
• hi = input resistance
• hr = reverse transfer voltage
ratio (Vi/Vo)  0
• hf = forward transfer current
ratio (Io/Ii)
• ho = output conductance

Figure 3.35: Hybrid


Equivalent Model
Contd…

Simplified General h-Parameter Model

• hi = input resistance
• hf = forward transfer current ratio (Io/Ii)
re vs. h-Parameter Model
Common-Emitter
h ie   re
h fe   ac

Common-Base

h ib  re
h fb     1
Contd…

The hybrid p model is most useful for


analysis of high-frequency transistor
applications.
At lower frequencies the hybrid p model
closely approximate the re parameters, and
can be replaced by them.
Common-Emitter Fixed-Bias Configuration

• The input is applied to the


base
• The output is from the
collector
• High input impedance
• Low output impedance
• High voltage and current
gain
• Phase shift between input
and output is 180
Contd…
• In addition, recognize that the input current Ii is not
the base current but the source current;

• while the output current Io is the collector current.



• The small-signal ac analysis begins by removing the
dc effects of VCC ,

• and replacing the dc blocking capacitors C1 and C2


by short-circuit equivalents.
Contd…

Figure 3.36: Common- Figure 3.37: Network following the removal


of the effects of VCC, C1, and C2
emitter fixed-bias
configuration
Contd…
• Substituting the re model for the common-emitter
configuration will result in the network of Figure
below.

Figure 3.38: substituting the re model into the


network
Contd…
• Assuming that β, re, and ro have been determined
will result in the following equations for the
important two-port characteristics of the system.
• Zi(input impedance):

• Zo: the output impedance of any system is defined


as the impedance Zo determined;
– when Vi = 0, Ii = Ib = 0, resulting in an open-
circuit equivalence for the current source.
• The result configuration is;
Contd…

Determining Zo

Av: The resistors ro and RC are in parallel;

If ro ≥ 10RC,
Contd…
Ai: The current gain
Current gain is determined in the following manner:
Applying the current-divider rule to the input and
output circuits,
Contd…
• However, if ro ≥ 10RC and RB ≥ 10βre, which is often
the case,

Phase Relationship:
• The negative sign in the resulting equation for Av
reveals that a 180° phase shift occurs between the
input and output signals.
Contd…

Figure 3.39: Demonstrating the 180° phase shift


between input and output waveforms
Contd…
EXAMPLE 1
For the network of Fig. 3.40:
(a) Determine re.
(b) Find Zi (with ro = ∞ Ω).
(c) Calculate Zo (with ro = ∞ Ω).
(d) Determine Av (with ro = ∞ Ω).
(e) Find Ai (with ro = ∞ Ω).
(f) Repeat parts (c) through (e) including ro = 50 kΩ in
all calculations and compare results.
Contd…
Solution
Contd…
Voltage-Divider Bias Configuration
• The next configuration to be analyzed is the
voltage-divider bias network.
• Recall that the name of the configuration is a result
of the voltage-divider bias at the input side to
determine the dc level of VB.

Figure 3.40; Voltage-divider


bias configuration
Contd…
• Substituting the re model equivalent circuit results
the network shown in Figure below.
• The absence of RE is due to the low-impedance
shorting effect of the bypass capacitor, CE.
• That is, at the frequency (or frequencies) of
operation,
– The reactance of the capacitor is so small compared to
RE that it is treated as a short circuit across RE.
Contd…

Figure 3.41: Substituting the re equivalent circuit into the ac


equivalent network of the voltage divider bias Configuration
Contd…
• When VCC is set to zero, it places one end of R1 and
RC at ground potential.
• In addition, note that R1 and R2 remain part of the
input circuit
• while RC is part of the output circuit.
• The parallel combination of R1 and R2 is defined by;
Contd…
Zo: with Vi set to 0 V resulting in Ib = 0 µA and βIb = 0
mA,

• If ro ≥ 10RC,
Av: Since RC and ro are in parallel,
Contd…
Ai:

and if R’ ≥ 10βre,
Contd…
EXAMPLE 2
For the network shown in Figure below. Determine;
(a) re.
(b) Zi.
(c) Zo (ro = ∞Ω).
(d) Av (ro = ∞Ω).
(e) Ai (ro = ∞Ω).
(f) The parameters of parts (b) through (e) if ro =
1/hoe = 50 kΩ and compare results.
Contd…
Contd…
Solution
Contd…
Contd…

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