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    Pa102fdg Unikc

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    PA102FDG P-channel mosfet datasheet

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    Pa102fdg Unikc

    Uploaded by

    alexmihai_scribd
    3 views5 pages
    PA102FDG P-channel mosfet datasheet

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    PA102FDG-UNIKC

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    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    PA102FDG P-channel mosfet datasheet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    3 views5 pages

    Pa102fdg Unikc

    Uploaded by

    alexmihai_scribd
    PA102FDG P-channel mosfet datasheet

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    PA102FDG

    P-Channel Enhancement Mode MOSFET

    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID

    -20V 115mΩ @VGS = -4.5V -10A

    TO-252

    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)


    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Drain-Source Voltage VDS -20
    V
    Gate-Source Voltage VGS ±12
    TC = 25 °C -10
    Continuous Drain Current ID
    TC = 100 °C -6.2 A
    1 IDM
    Pulsed Drain Current -24
    TC = 25 °C 25
    Power Dissipation PD W
    TC = 100 °C 9.6
    Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RqJC 5
    °C / W
    Junction-to-Ambient RqJA 110
    1
    Pulse width limited by maximum junction temperature.
    2
    Duty cycle ≤1%

    Ver 1.1 1 2013-3-26


    PA102FDG
    P-Channel Enhancement Mode MOSFET

    ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNIT
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -20
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -0.45 -0.8 -1.2
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±12V ±100 nA
    VDS = -16V, VGS = 0V -1
    Zero Gate Voltage Drain Current IDSS mA
    VDS = -13.2V, VGS = 0V , TJ = 125 °C -10
    On-State Drain Current1 ID(ON) VDS = -5V, VGS = -4.5V -24 A
    Drain-Source On-State VGS = -2.5V, ID = -2A 124 180
    RDS(ON) mΩ
    Resistance1 VGS = -4.5V, ID = -3A 93 115
    Forward Transconductance1 gfs VDS = -5V, ID = -3A 4.4 S
    DYNAMIC
    Input Capacitance Ciss 369
    Output Capacitance Coss VGS = 0V, VDS = -10V, f = 1MHz 78 pF
    Reverse Transfer Capacitance Crss 67
    2 Qg
    Total Gate Charge 5.1
    2
    VDS = 0.5V(BR)DSS, VGS = -4.5V,
    Gate-Source Charge Qgs 1 nC
    ID = -3A
    2 Qgd
    Gate-Drain Charge 2
    2 td(on)
    Turn-On Delay Time 25
    2 tr
    Rise Time VDD = -10V, 60
    nS
    Turn-Off Delay Time 2 td(off) ID @ -1A, VGS = -5V, RG = 6Ω 70
    Fall Time2 tf 60
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
    Continuous Current IS -10
    3
    A
    Pulsed Current ISM -24
    Forward Voltage1 VSD IF = -10A, VGS = 0V -1.2 V
    1
    Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
    2
    Independent of operating temperature.
    3
    Pusle width limited by maximum junction temperature.

    Ver 1.1 2 2013-3-26


    PA102FDG
    P-Channel Enhancement Mode MOSFET

    Ver 1.1 3 2013-3-26


    PA102FDG
    P-Channel Enhancement Mode MOSFET

    Ver 1.1 4 2013-3-26


    PA102FDG
    P-Channel Enhancement Mode MOSFET

    Ver 1.1 5 2013-3-26

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