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Ang M1 AR3

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11 views13 pages

Ang M1 AR3

Uploaded by

Cedric Rodriguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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MAPUA UNIVERSITY

SCHOOL OF EECE

DIODE CHARACTERISTICS
EXPERIMENT 3
Submitted by: Ang, Alvin Kyle T.
Submitted to: Charmaine Paglinawan
Course and Section: ECE20L-2/B4
Group Number: 6

Date Performed: November 29, 2023


Date Submitted: December 6, 2023

Charmaine Paglinawan
Instructor
1. I am the only person to use my Cardinal Edge
account using my username and password.

2. I understand that I am responsible for being honest


and ethical in the given online assessments.

3. The assessments were completed by my own


efforts, and I did not collaborate with any other
persons for ideas or answers.

4. This is the first time I will submit this assessment


(either partially or entirely) for academic evaluation.

5. I will not engage in any other activities that will


dishonestly improve my results or dishonestly
improve or hurt the result of others.
Corrections
In Objective B, we made an error in calculation for question B2.
Instead of dividing VR1(7.6) by R1(4.7 kOhms), we divided VR1 by VD(0.6)
which resulted in 12.667A when the right answer should be 0.001617A OR
1.1617mA

Interpretation of results
Objective A;
Anode-Cathode:
- Diode test function (DMM): 0.545V
- Ohmmeter: 2.015 Megaohms

Cathode-Anode:
- Diode test function (DMM): Overload
- Ohmmeter: Overload

Forward Bias:
The diode exhibits a forward voltage drop of 0.545V, which is within the expected
range for a silicon diode. This suggests that the diode is conducting when
forward-biased. The ohmmeter reading in the forward bias condition is 2.015
Megaohms, indicating a low forward resistance, which is typical for a working
diode.

Reverse Bias:
The diode shows an overload condition in both the diode test function and
ohmmeter when reverse-biased. This is expected behavior for a healthy diode.
In reverse bias, only a small leakage current should flow, and the diode should
exhibit a very high reverse resistance. The overload readings in this case suggest
that the diode is blocking reverse current effectively.
Objective B;
In Objective B, the results showed that in a forward bias, current is allowed
to pass through freely. Whereas in a reverse bias condition, the current is
restricted.
In the data we have gathered, we were able to come to a conclusion that
current flows freely in a forward condition. We computed a current of 1.1617mA in
the case where the connections are made correctly. However, when we turned
the diode around, the reverse current we got was 0.
Objective C;
In part C, we were tasked to determine the relationship of the voltage and
current of the diode when forward and reverse biased. Based on the results we
have gathered, we concluded that as we increased the voltage (forward bias), the
current exponentially increased, as shown in graph 2-2. Whereas in a negative
voltage, the current remained zero (reverse bias).

Conclusion
Based on the experimental results in objective A, the diode appears to be
in good condition. It demonstrates the expected behavior of a silicon diode,
conducting in the forward bias and blocking current effectively in the reverse bias.
The readings obtained are consistent with the specifications and characteristics of
a functioning diode.
Objective B was about the behavior of a diode under forward and reverse
bias conditions. Our experimental results demonstrated that in a forward bias, the
diode permits current to flow freely, yielding a calculated current of 1.1617mA
under optimal connections. Conversely, in a reverse bias, the diode effectively
restricts the current, resulting in a measured reverse current of 0. This result
showed the crucial role of biasing in controlling the flow of current through a diode
and contributes to a comprehensive understanding of its operational
characteristics.

Objective C delved into examining the relationship between voltage and


current in a diode under both forward and reverse bias. Through meticulous
experimentation and data analysis, we determined that increasing the voltage led
to an exponential rise in current. This relationship emphasizes the dynamic
interplay between voltage and current in a diode, shedding light on its behavior
across different biasing conditions. The findings from Objective C enhance our
comprehension of the diode's electrical characteristics, providing valuable
information for practical applications in electronic circuits.

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