GD50PIK120C6S IGBT Module

STARPOWER
SEMICONDUCTOR IGBT

GD50PIK120C6S
1200V/50A PIM in one-package

General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.

Features
 Low VCE(sat) NPT IGBT technology
 Low switching loss
 10μs short circuit capability
 VCE(sat) with positive temperature coefficient
 Fast & soft reverse recovery anti-parallel FWD
 Isolated copper baseplate using DBC technology

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply

Equivalent Circuit Schematic

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 1/12 DY01

GD50PIK120C6S IGBT Module

Absolute Maximum Ratings TC=25℃ unless otherwise noted

IGBT-inverter
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25℃ 90
IC A
@ TC=95℃ 50
ICM Pulsed Collector Current tp=1ms 100 A
PD Maximum Power Dissipation @ Tj=150℃ 370 W

Diode-inverter
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 50 A
IFM Diode Maximum Forward Current tp=1ms 100 A

Diode-rectifier
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1600 V
IO Average Output Current 50Hz/60Hz,sine wave 50 A
IFSM Surge Forward Current VR=0V,tp=10ms,Tj=45℃ 850 A
I2t I2t-value,VR=0V,t p=10ms,Tj=45℃ 3610 A2s

IGBT-brake
Symbol Description Value Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ±20 V
Collector Current @ TC=25℃ 50
IC A
@ TC=100℃ 25
ICM Pulsed Collector Current tp=1ms 50 A
PD Maximum Power Dissipation @ Tj=150℃ 217 W

Diode-brake
Symbol Description Value Unit
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Diode Continuous Forward Current 30 A
IFM Diode Maximum Forward Current tp=1ms 60 A

Module
Symbol Description Value Unit
Tjmax Maximum Junction Temperature 150 ℃
Operating Junction Temperature(inverter,brake) -40 to +125
Tjop ℃
Operating Junction Temperature(rectifier) -40 to +150
TSTG Storage Temperature Range -40 to +125 ℃
VISO Isolation Voltage RMS,f=50Hz,t=1min 4000 V

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 2/12 DY01

GD50PIK120C6S IGBT Module

IGBT-inverter Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=50A,VGE=15V,
2.15 2.50
Collector to Emitter Tj=25℃
VCE(sat) V
Saturation Voltage IC=50A,VGE=15V,
2.60
Tj=125℃
Gate-Emitter Threshold IC=1.0mA,VCE=VGE,
VGE(th) 5.0 5.4 6.0 V
Vol tage Tj=25℃
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25℃
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25℃
RGint Internal Gate Resistance / Ω
Cies Input Capacitance 3.30 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.22 nF
Capacitance
QG Gate Charge VGE=-15…+15V 520 nC
td(on) Turn-On Delay Time 240 ns
tr Rise Time 56 ns
td(off) Turn-Off Delay Time 250 ns
VCC=600V,IC=50A,
tf Fall Time 260 ns
RG=13Ω,VGE=±15V,
Turn-On Switching
Eon Tj=25℃ 6.02 mJ
Loss
Turn-Off Switching
Eoff 3.89 mJ
Loss
td(on) Turn-On Delay Time 257 ns
tr Rise Time 58 ns
td(off) Turn-Off Delay Time 275 ns
VCC=600V,IC=50A,
tf Fall Time 325 ns
RG=13Ω,VGE=±15V,
Turn-On Switching Tj=125℃
Eon 7.05 mJ
Loss
Turn-Off Switching
Eoff 5.41 mJ
Loss
tP≤10μs,VGE=15 V,
ISC SC Data Tj=125℃,VCC=900V, 500 A
VCEM≤1200V

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 3/12 DY01

GD50PIK120C6S IGBT Module

Diode-inverter Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward IF=50A,VGE=0V,Tj=25℃ 1.80 2.20
VF V
Vol tage IF=50A,VGE=0V,Tj=125℃ 1.85
Qr Recovered Charge 4.1 μC
Peak Reverse VR=600V,IF=50A,
IRM 44 A
Recovery Current -di/dt=1020A/μs,VGE=-15V
Reverse Recovery Tj=25℃
Erec 1.69 mJ
Energy
Qr Recovered Charge 7.9 μC
Peak Reverse VR=600V,IF=50A,
IRM 53 A
Recovery Current -di/dt=1020A/μs,VGE=-15V
Reverse Recovery Tj=125℃
Erec 3.11 mJ
Energy

Diode-rectifier Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward
VF IF=50A,VGE=0V,Tj=150℃ 1.03 V
Vol tage
IR Reverse Current Tj=150℃,VR=1600V 2.0 mA

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 4/12 DY01

GD50PIK120C6S IGBT Module

IGBT-brake Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=25A,VGE=15V,
2.05 2.50
Collector to Emitter Tj=25℃
VCE(sat) V
Saturation Voltage IC=25A,VGE=15V,
2.40
Tj=125℃
Gate-Emitter Threshold IC=1.0mA,VCE=VGE,
VGE(th) 5.0 5.6 6.2 V
Vol tage Tj=25℃
Collector Cut-Off VCE=VCES,VGE=0V,
ICES 1.0 mA
Current Tj=25℃
Gate-Emitter Leakage VGE=VGES,VCE=0V,
IGES 400 nA
Current Tj=25℃
RGint Internal Gate Resistance / Ω
Cies Input Capacitance 1.65 nF
VCE=25V,f=1MHz,
Reverse Transfer
Cres VGE=0V 0.11 nF
Capacitance
QG Gate Charge VGE=-15…+15V 260 nC
td(on) Turn-On Delay Time 186 ns
tr Rise Time 54 ns
td(off) Turn-Off Delay Time 255 ns
VCC=600V,IC=25A,
tf Fall Time 317 ns
RG=33Ω,VGE=±15V,
Turn-On Switching
Eon Tj=25℃ 2.67 mJ
Loss
Turn-Off Switching
Eoff 1.75 mJ
Loss
td(on) Turn-On Delay Time 227 ns
tr Rise Time 74 ns
td(off) Turn-Off Delay Time 280 ns
VCC=600V,IC=25A,
tf Fall Time 325 ns
RG=33Ω,VGE=±15V,
Turn-On Switching Tj=125℃
Eon 3.70 mJ
Loss
Turn-Off Switching
Eoff 1.76 mJ
Loss
tP≤10μs,VGE=15 V,
ISC SC Data Tj=125℃,V CC=900V, 250 A
VCEM≤1200V

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 5/12 DY01

GD50PIK120C6S IGBT Module

Diode-brake Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Diode Forward IF=30A,VGE=0V,Tj=25℃ 1.90 2.35
VF V
Vol tage IF=30A,VGE=0V,Tj=125℃ 1.80
Qr Recovered Charge 2.1 μC
Peak Reverse VR=600V,IF=30A,
IRM 19 A
Recovery Current -di/dt=400A/μs,VGE=-15V
Reverse Recovery Tj=25℃
Erec 1.00 mJ
Energy
Qr Recovered Charge 4.1 μC
Peak Reverse VR=600V,IF=30A,
IRM 22 A
Recovery Current -di/dt=4010A/μs,VGE=-15V
Reverse Recovery Tj=125℃
Erec 2.04 mJ
Energy

NTC Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit
R25 Rated Resistance 5.0 kΩ
∆R/R Deviation of R100 TC=100℃,R100=493.3Ω -5 5 %
P25 Power Dissipation 20.0 mW
R2=R25exp[B25/50(1/T2-
B25/50 B-value 3375 K
1/(298.15K))]

Module Characteristics TC=25℃ unless otherwise noted

Symbol Parameter Min. Typ. Max. Unit
LCE Stray Inductance 60 nH
RCC’+EE’ 4.00
Module Lead Resistance,Terminal to Chip mΩ
RAA’+CC’ 2.00
Junction-to-Case (per IGBT-inverter) 0.332
Junction-to-Case (per Diode-inverter) 0.643
RθJC Junction-to-Case (per Diode-rectifier) 0.654 K/W
Junction-to-Case (per IGBT-brake-chopper) 0.576
Junction-to-Case (per Diode-brake-chopper) 1.082
Case-to-Sink (per IGBT-inverter) 0.117
Case-to-Sink (per Diode-inverter) 0.227
RθCS Case-to-Sink (per Diode-rectifier) 0.231 K/W
Case-to-Sink (per IGBT-brake-chopper) 0.203
Case-to-Sink (per Diode-brake-chopper) 0.382
RθCS Case-to-Sink 0.009 K/W
M Mounting Torque, Screw:M5 3.0 6.0 N.m
G Weight of Module 300 g

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 6/12 DY01

 GD50PIK120C6S IGBT Module

100 100

90 VGE=15V 90 VCE=20V

80 80

70 70
25℃
60 60
IC [A]

IC [A]
50 50 125℃
40 125℃ 40

30 30 25℃
20 20

10 10

0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 6 7 8 9 10 11
VCE [V] VGE [V]

Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics

20 18

18 VCC=600V VCC=600V
RG=13Ω 16
IC=50A
16 VGE=±15V VGE=±15V
14
Tj=125℃ Tj=125℃
14
12 EON
12
10
E [mJ]

E [mJ]

10
EON 8
8
6
6
EOFF
4 4
EOFF
2 2

0 0
0 25 50 75 100 0 10 20 30 40 50 60 70
IC [A] RG [Ω]

Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 7/12 DY01

 GD50PIK120C6S IGBT Module

110 1
100
90 Module IGBT
80
70

ZthJC [K/W]
60
IC [A]

0.1
50
40
30 RG=13Ω
20 VGE=±15V i: 1 2 3 4
Tj=125℃ ri[K/W]: 0.0199 0.1096 0.1062 0.0963

10 τi[s]: 0.01 0.02 0.05 0.1

0 0.01
0 350 700 1050 1400 0.001 0.01 0.1 1 10
VCE [V] t [s]

Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance

100 4.5

90 4
80 3.5
70 EREC
3
60
2.5
E [mJ]
IF [A]

50
2
40
125℃ 1.5
30 VCC=600V
RG=13Ω
20 1
25℃ VGE=-15V
0.5 Tj=125℃
10

0 0
0 0.5 1 1.5 2 2.5 0 25 50 75 100
VF [V] IF [A]

Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 8/12 DY01

 GD50PIK120C6S IGBT Module

3.4 1
Diode
3.2

3 EREC

ZthJC [K/W]
2.8
E [mJ]

0.1
2.6

VCC=600V
2.4
IF=50A
VGE=-15V
i: 1 2 3 4
2.2 Tj=125℃ ri[K/W]: 0.0386 0.2122 0.2058 0.1864
τi[s]: 0.01 0.02 0.05 0.1

2 0.01
0 10 20 30 40 50 60 70 0.001 0.01 0.1 1 10
RG [Ω] t [s]

Fig 9. Diode-inverter Switching Loss vs. RG Fig 10. Diode-inverter Transient Thermal Impedance

100 50

90 45 VGE=15V
80 40

70 35

60 30 25℃
IC [A]
IF [A]

50 25
150℃ 125℃
40 20

30 25℃ 15

20 10

10 5

0 0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0.5 1 1.5 2 2.5 3 3.5
VF [V] VCE [V]

Fig 11. Diode-rectifier Forward Characteristics Fig 12. IGBT-brake-chopper Output Characteristics

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 9/12 DY01

 GD50PIK120C6S IGBT Module

60 100

50

40 10

R [kΩ]
IF [A]

30

125℃ 1
20 25℃

10

0 0.1
0 0.4 0.8 1.2 1.6 2 2.4 0 30 60 90 120 150
VF [V] TC [℃]

Fig 13. Diode-brake-chopper Forward Characteristics Fig 14. NTC Temperature Characteristic

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 10/12 DY01

GD50PIK120C6S IGBT Module

Circuit Schematic

Package Dimensions
Dimensions in Millimeters

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 11/12 DY01

GD50PIK120C6S IGBT Module

Terms and Conditions of Usage

The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.

This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.

Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.

Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.

Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.

If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.

©2014 STARPOWER Semiconductor Ltd. 2/19/2014 12/12 DY01