Space Electronics

A challenging world for designers

Christian Poivey
Kenneth A. LaBel
NASA-GSFC

DCIW - Soac. Radlaon Enecls u d e d b y C h r ( m Pavev. Badeiur. h-. November Z6. XW I

Designing Electronics for Space

-Low power
-High reliability
*Harsh environment
*Thermal
*Mechanical
~Electro-magnetic
*Radiation
oclsO4 - Radtam E l i d s m e d by C h S m b v q Emdew&Fr- Nwabar 28 Z 0 4
 Outline
The Space Radiation
Environment
The Effects on Electronics
The Environment in Action
Hardening Approaches to
Commercial CMOS electronics
- CMOS devices vulnerabilities
- Hardening approaches
Conclusion
Atomis Interactions
- DireetWmU6n
/
Interactinn with Nucleus
- Indirect hlzatlon
/
- Nucleus is Dlspl8cd
6frp://~~~.s~ci.~u/hsr/rticmos/~~oma11ce/at1amaIies/biger.h1mI

oclm - space M l a l o n Efledr wesenled by Chn?PmPwy. W e a r y Fr-. Novemk26 2001

Space Radiation Environment

U i k M Science, Inc.
Qf Japan, by K. En@

or radioisotope thermal generators (RTGs)

Atmosphere and terrestrial may see GCR and secondaries
 Sunspot Cycle:
An Indicator of the Solar Cycle

2
2
6
5
0
D-,
rn
5
cn

Length Varies from 9 - 13 Years

7 Years Solar Maximum, 4 Years Solar Minimum 5
-
DCISOI S p e RrdialtonEflecls p a n l e d by CMr(tin Powey 8 a d e a u x R a m . Novmbef 26 Z3M

Solar Particle Events

Cyclical (Solar Max, Solar Min)
- 11-year AVERAGE (9 to 13)
- Solar Max is more active time period
Two types of events
- Gradual (Coronal Mass EjWens --
CMEs)
Proton rich
- Impulsive (Solar Flares)
Heavy ion rich \
Abundances Dependent on Radial
Distance from Sun
Particles are Partially Ionized
- Greater Ability to Penetrate
Magnetosphere than GCRs

I
6
DClW - Space Radoaan Eflecls p e n l e d by CMrlnsn h e y W a u x . Frame Novembet a ZOOI
 Solar Proton Event October 1989 -
Proton Fluxes 99% Worst Case Event -

z
2
B
2
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.
.-5V)
c
3
6

:
& p a b a l E n d i e n lIcHIYtm
7
o a w - spke Radlalm Eiieds -led by Cmslla, W e y . Bordeaux Fr-, Novemba 25.2od

Free-Space Particles: Galactic

Cosmic Rays (GCRs) or Heavy
Ions
Definition
- A GCR ion isa charged particle CREME 96, Solar Mlnlmum, 100 mils (2.54 mm) A1

P
(H, He. Fe, etc)
- Typically found in free space
(galactic cosmic rays or GCRs) 4
Energies range from MeV to a
GeVs for particles of concern
for SEE 3E
a,
Origin is unknown C
- Important attribute for impact f
on electronics is how much
5
energy is deposited by this
particle as it passes through a
semiconductor material. This
" -
LET (MeV-cm21mg)
w R1

is known as Linear Energy

Transfer ar LET (dEldX). m ~ -
C-y Tecttpology SensfBvt#y
8
-
D C l W Spats RadbalmnE k l n p e w l e d by Ctmdlm P w e y Bordear Fr-. Wmba 26 2od
Trapped Particles in the Earth's Magnetic
Field: Proton & Electron Intensities

L-Shell

Solar Cycle Effects:

Modulator and Source
WarrM9lcimm
- Trapped Proton Levels Lower,
Electrons Higher
- GCR Levels Lower
- Neutron Levels in the Atmosphere
Are Lower
- Solar Events More Frequent (L
Greater Intensity
- Magnetic Storms More Frequent --
> Can Increase Particle Levels in
Belts
Solar Mlnlmum
- Trapped Protons Higher.
Electrons Lower Light bulb shaped CME
courtesy of SOHO/LASCO C3 Instrument
- GCR Levels 1 .
- Neutron Levels ~nrhe Atmosphere
Are Higher
- Solar Events Are Rare
DClSOl - Sp-
10
Rdlaion EAeslr perenled by Chnslan h e y Rordemx Frame ~ a v m b n 2 6m01
 Outline
The Space Radiation
Environment
* The Effe6ts on E.lac;t.mnics
* The Environment in Action
Hardening Approaches to
Commercial CMOS electronics
- CMOS devices vulnerabilities
- Hardening approaches
Conclusion
Atomic Interactions
- Direct knization
/"' I
'l
b l M d ( k n Mth NOdeW/-
- indimt i~iz&iatl
- Wejr!b :I$DI?SpWed8
h1~://m6lu..mci.sdu/l11fh1tcmoJ/perfomrnn~dm1omn/i~~igcr.hfml

11
DCtW - S p a RadlaIon EKeclr pcnMed by C h s l l a PMy. M e a u i . Frarrs. Novemba28. Zrm

Radiation Effects and Spacecraft

High energy particles loose
energy when they cross
electronic parts materials and
cause radiation effects
- Long-term effects
Total ionizing dose (TlD)
Displacementdamage
- Transient or single particle
effects (Single event effects or
SEE)
Soft or hard errors

- -
nit AEUVCP U ~ Isww
I GAPS)Imager
H e r iivadiaiion with heavy ions at T k a k
ALM UnQwsffy CpIptrqn

12
DCw
l - Sp&e Radlann Enecls pevnled by Chs!lar P w s y Bardaaux F l a r e November 26 ZOW
 Total Ionizing Dose (TID)
Cumulative long term ionizi'ng damage
due to protons & electrons
- Incident particles transfer energy to material through electron hole
creation. Holes are trapped within devices' oxides or the interfaces
oxidelsilicon.

Effects
- Increase of Leakage Currents
- Degradation of logical input levels and noise
margin
- Degradation of fan out
- Degradation of propagation delays
- Functional Failures
Unit of radiation: dose in Gray or rad
- 1 Gray = 100 rad = 0.01 JIKg
13
DClSX - Space RadlamnEneclr -led by Chdtan Pdvey. BcaIcaux. Frarrr. N m b a 26. itCd

TID-induced threshold voltage shifts

effects in CMOS devices
10

AV.c 0
1P--
AVp 0 -s .
.
~ a h s AVd<O Before

1C1--
1 7 . . . . . . . . . . . . .
600 350 260 180 130 90 65
I I
I I Technology Generation (nm)
G a b Voltage M
AftPr' O m ,1Em0r

When tox< 5 nm, significant hole

tunneling out of the gate oxide occurs,
resulting in negligible number of
remaining holes: AVO, AV,, 0 - -
14
oClsC4 -Spas Radmllon E n M r pcsnred by C M f mP a ~ Bmlemx
y Fr- m b s 26 2801
TID-induced intra device edge leakage

Pdmary Electron
Current Flow
I Polysilicon \ -
Gate

Field

-
(After Alexander)
Oxide

'7
n* Source
Edge C u m t
Components
Fox
Thin oxide Leakage
Boundary A\ (FL)
(not shown)
A

Edge Leakage - Basic Mechanism

NMOS

/Jf / f ""kt"
(After Brisset)

1%
oClSC4 - spkcR&Umn mRcr paen(ed by ClmSia m a u x Fram. ?4wemW213 2001
 Example of Edge Leakage for
0.3610.1 8 pm NMOS Transistor

IE-I3

IE-15
-0.5 0 0.5 1 1.5 2
Gate Voltage (V)

dm* kabeq r n b f 2004

17
~ c l w - S B . C U R D d N H O n E m * p a a U e w B M H n W N y . ~ F r e n a . ~ZXM
m

Inter device isolation-oxide leakage

Inversion of field oxide

results in leakage path
between N+ contact (Vdd)
in the N- well and N+ source I
(GND)
Field oxide leakage paths
can also span N+ sourceldrain
regions between adjacent
N- channel transistors
I
Field oxide leakage path
 Example of TID degradation for
0.18 pm CMOS SRAM
SRAM. CMOS 0.18 pm process
1AOE43 -
1.20E43 -

-5 1.00E43 -

2
u
8.OOE.M -
C
u
,.OOE.M
S
4.00E.M

2.00E.M

O.OOE*00
0 50 100 150 200 250 300 350
Total dose (kradSi)

No significant degradation up to 90 krad-Si

Sufficient for most space applications, typical dose levels:
-Geostationary Orbit, 10 years: 50 krad-Si
*Low Earth Orbit, 5 years: 20 krad-Si
19
DCIW - S- RadtAon Eneclop a n n l e d by Cmslca Powey Wear%R a m . Nwnnber 2B.20M

Displacement Damage (DD)

Cumulative long term non-ionizing damage due to
protons, electrons, and neutrons
- Incident particles transfer energy by elastic or inelastic
collisions with atoms of the devices material (Silicon).
Structural defects are created on the crystallographic
structure.
Effects
- Minority carrier lifetime in the semiconductor is decreased
Increase leakage currents
Decrease gain of bipolar transistors
- Important for opto-electronics and linear bipolar devices,
not significant for CMOS devices.
Unit of radiation:
- equivalent fluence for a selected electron or proton energy
in particleslcm2

20
D E l h - &aa uitationEff~rrp e n l e d b y CtVi~rarPWey Borscaur. Rarrc'Novemh iB. &4
 DD damage example, CCD

60 MeV
Proton:

10 MeV
proton5

@&@ RAS&M;l
Etapkf~&~ n shlcut &W&ef

21
-
DClSM Spau R a d Y b n Enedr p w e d by CMrtla Pay.W a u i . Fr-. N m b a 26.2001

Single Event Effects (SEES)

Ionizing effect caused by a single charged parti
- Heavy ions
Direct ionization
- Creation of a very dense
plasma of electrons hole
pairs
- The pairs that do not recombine
are separated by the junction
electric field, and a current spik
is generated.

- Protons for sensitive devices

Nuclear reactions for standard devices
Unit of radiation:
- LET (Linear Energy Transfer) in MeVcm2/mg
If the LET of the particle (or reaction) is greater
than the amount of energy or critical charge
required, an effect may be seen

22
DClW - Space Radlaloo EUeclsmesenled by C h r t l s l h e y Bordeaux Frane Novaober26 2IW
 Single Event Upset (SEU)

Bitline Bitline

11
Wen SEU current
I,, exceeds
restoring current
from crosscoupled
inverter
the nodesuch that
vokage
drops below V&! fol

-
oo long, an upset
I

-
-
(After Baumann)

23
-space Radialon Ellecls -led
~clw by C m ~ PMy
m Bordeax R a m November 28 ZW4

SEU trend on SRAM

*-.--- - - -1KOEW

-At fixed voltage SER

decreased by 13% per
generation.
4s..

\ -3
-

F k erInE:
*At the nominal voltage
3 L
for each generation (14% s,
scaling per generation),
the SER sensitivity has 1Z

increased by about 8%
per generation. a; 0% 030 T r c h n o l0o(I
~generanon om Om

mr Wzuch& IEbM 0 3

24
~clwS- - Radldlon E n ~ l peerued
s by C m r t l a b e y BMdemx Frawe November 28 XID(
 Single Event Latchup (SEL)
in CMOS circuits

SCR
VDD

+-I
produces 1>1, $#,,>land
VDD>VH,then latChUp
O W -.
Latchup can cause As technology scales.
soon Vm<VH and latchup
circuit lockup is no longer,a proble?~
and/or catastrophic Epi reducedR, 5 increase
device failure - latchup threshold

Single Event Transient (SET)

(After Baumann)
Voltage transients can I---" -~ l t
propagate through
combinatorial logic
- Indistinguishable from

I
normal signals
- Incorrectly latched if
arrive at clock edge Total Error = SET + SKI'
1
Errors rates now depend A
2
on clock frequency o A

Total error rate is the sum

of the SEU + SET
contributions
m Frequency
-

26
- Wscu - Spke Radlaan Er(ecls pesenledby C h s l ~ mPmey B0rde.u~Frame Nwanba 26 ZOM
 Transient propagation in CMOS

If transient pulse width is greater Inverter Chaln lnflnlte Propagation

than critical width, the pulse will

propagate indefinitelythrough
combinatorial logic.
For pulses shorter than the
critical transient width, the
transient will be attenuated.
Critical width decreases with
feature size
- Estimate of heavy ion transient
pulse width is 100-200 ps
- SETS important for CMOS at or
below 0.25 p m technology node
I000 100 10
Feature Size (nm)

E W, - H @4
A Mr ~ b
27
Dclsw - spae Rajld~onEKecls p&ed by Cmdlan Pomy. Bordeaux Fr-. November 26 XXY

Other Single Event Effects

Multiple Event Upset (MEU) Several blts ~ 0 r ~ p t by

e da single Memories
particle
Single Event Functional Loss of normal operation Complex devices with bullt-in
Interrupt (SEFI) state machinelcontrol sections
!Single Event Burnout (SEE) High current condition BJT. N channel power MOSFETs
!
I
Single Event Gate Rupture e dielectric Power MOSFETS. flash PROM,.
1SFC.I

hcstfuclive event
in a MOSFET wsd in a
DGDC Coneetter

111
oclw - spaDe Radtdan Elfeclo pesenled by Chdtm h e y w a u x Frarce. November 26. XXY
 Outline
The Space Radiation
Environment
The Effects on Electronics
The Environment in Action
Hardening Approaches to
Commercial CMOS electronics
I
- CMOS devices vulnerabilities
- Hardening approaches
Conclusion
A&mi*u InbkadiMs
- DWe@tlonhatim
/
IntsrWmn Wth Mmleuo/
- lfidiIV$HI@~iBaUml I~l~:///wmts~sci.drdl~~r/,~Iemo~~~om~(~~ce/~(~~omalie~/Mg~r.I~ml
- Ml;lob'ls CHq&wed
29
Delsw -Space Radl24.m Efleds peenled by U n s l l n Pavey. mai,Francs. November 28.2001

Radiation Effects on Electronics

and the Space Environment
Three portions of the natural
space environment contribute to
the radiation hazard
--Solar particles
Protons and heavier ions
- SEE, TID, DD
- Free-space pactic1ss
GCR
- For earth-orbiting craft, the
earth's magnetic field provides
some protection for GCR
- ---
3tL
- Trapped partids (in the belts)
l h e run acts as a d u j a t w and
source In the snrce enuimnment
Protons and electrons including
the South Atlantic Anomaly
(SAA)
- SEE (Protons)
- DD, TID (Protons, Electrons)
 SAA and Trapped Protons:
Effects ef the Asymmetry in the Proton Belts on
SRAM Upset Rate at Varying Altitudes on CRUXIAPEX
-
90
Hutaehi IM'Altitude li5Okm - 750km HIIachl 1M Altltude 125Okm 1350km

IS
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~onglmde Lonpllvde
31
-
DClSDI S+=e Radial-n Effeds -"led by ClwWtan k y W a u x , h a m . November ZS M04

Background environment and solar events

SRAM upset rate versus time on Orbview-2 SSRs

November9.2000

April IS. 2001 November 50.2001

'.L I ..
 Recent Solar Events -
A Fe.w Notes and Implications
In Oct-Nov of this year, a series of X-class (X-451) solar events took place
- High particle fluxes were noted
- Many spacecraft performed safing maneuvers
- Many systems experienced higher than normal (but correctable) data error rates
- Several spacecraft had anomalies causing spacecraft safing
- Increased noise seen in many instruments
- Drag and heating issues noted
- Instrument FAILURES occurred
- Two known spacecraft FAILURES occurred
Power grid systems affected, communication systems affected...

..%I
33
Dclsol - spats R d ~ d w Eflacls
n p e m l e d by C h s l l a Wey Badcarx Francs. Novnnber Z3 ZOaO

SOH0 LASCO C2 of the Solar Event

14
Oclw -Spa% Radalwn E l l ~ l pesenld
s by ChnYlan Powsy. Bordeaux. Frame. Novemba 26, ZCOt
 Solar Event Effect Solar Array -
Degradation on CLUSTER Spacecraft
~ ~ . ~ L ~ - o I ~ O * ~ ~ N - % ~ O O I - S ~ ~ O O > . ~ ~ ~ ~ ~ ~ =
M l l ( o ~ a . r u l d ( L h D m O I Y I Y --L~MhlbcWZ%-->
- ~ ~ ~ ~ ~ ~ ~ ~ I S ~ ~ ~ I ~ ~ ~ D . D . D . I I - D D D D -
me.&*-.IL
Tb.-p.lrnmuh.u- ZMYhM.aP

r...*...,,,.ar
D.C".IIr .*. p.D.*."l.U.l.I..,,.

Many other spacecraft to

noted degradation as well.

3s
OCISOI - spas w ~ a o n
Eneclspa&@ by Chdtan Pwey Bx*ar Fr- Novemkr 26 2001

Science Spacecraft Anomalies During

Recent Solar Events
 Science Instrument Anomalies During
Recent Solar Events

37
DCIS(LI - Spse Radldon E l l ~ tpesecied
r by Cmslln %ey Bordeaul Fr- NoMmber 2U 2000

Orbits affected on several spacecraft

Power system failure
- Malmo, Sweden
High Current in power transmission lines
- Wisconsin and New York
Communication noise increase
FAA issued a radiation dose alert for planes
flying over 25,000 ft
 Outline
The Space Radiation
Environment
The Effects on Electronics
The Environment in Action

1
Halrdeining Appro;achoe to
Cornrrie~dCMOS ehtronics
- CMOS devices vulnerabilities
- Hardening approaches
Conclusion
Atomic Interactions

-
-
- Direet fonizatian

i a t e m u n ultk NII~@UI/
hcdhWt*im$bR~
N W Q41, o~ m #
-
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-
I~~~~://~~~.s~sci.edUnis~/r~icmosl~~oma~~~c/a~~omaIie~/big~r.Ii~mI

D C I ? ~ Space Radtamn EUscls peM&by C h s i t n Ponry. Bade- name. m b o ZB. ZOW

39

Hardening by design
to radiation effects

Layout:
Guard bandlGuard ring
Spacing
Body ties
 SEU hardening at primitive cell level

Increased Drive Current Resistive Coupling

t " t

(After Bare)
I I 1 (After Dodd)

*Decrease response tine by

(m)
-Increase Drive current I, increasing RC with feedback
resistors
increasing restoring current
*No speed penalty *Resistors are not an
-Area penalty a I, option at many
commercial foundries
-Speed penalty
*Small area penalty

SEU hardening at macrocell level

Design enhancements: deal with SEU occurring
in primitive cells
- Hardened data latches: DICE, HIT,..

(Afler Calin)
Uses a 4-node redundant
structure
*Stores data as 1010
or 0101
*Relies on dual node
feedback control
Two nodes must be
struck simultaneously
to generate an upset
*Decrease in effective
sensitive area
 SEU hardening at macrocell level
Design enhancements: deal with SEU occurring
in primitive cells
- redundancies

-Triple Module Redundancy (TMR)

Triple logic + vote
=Reduceeffective sensitivity
7-7QT-b Reset

-2 latches must be struck

simultaneously to get an error
-Does not increase tolerance of
individual latches
-- 3x-4x powerlarea

(After Black)

43
oclsoo - spase W e a m n E n d s w e d by Cmsja poMv, Eardeaux, France. m b n 26. m04

SEUlSET hardening at macrocell level

:---------------------------,----------------------------,
I

I
IN
CLOCK -
I

OUT

: Temporal Sampling
----------
:-------
! Asynchronous
---- -------- voting-:
-------------------
By delaying clocks, transient can only be captured at Ilatch
*Voted out
* Can delay data instead of clocks
-Sensitiveto transients on clock line
*Area penalty 3x - 4x-
*Speed penalty: llf,, = Ilf, + 2 AT
*Many variations on this concept

DC& - ~ ~ ~ ~ ~ ' k a d i a lp r b y ~ r s npakey e e a u x C

a enS~e rcnd& ram ~ove%%f8 %
*
 SEUlSET hardening at macrocell level

IN

CLOCK

Achieves equivalent of triple spatial redundancy by using same

circuitry at three different times
With appropriate AT, can be immune to upset from multiple node
strikes
Immune to transients on: data, clock, asynchronous control, and
synchronous lines

45
DCIm -Spa;. Radldan EUects prrenled by C h d m b e y w e a r s Frarca November 26 XYW

Hardening at the function level

Design enhancement to deal with errors occurring in macrocells

Redundancies and voting or lockstep
EDACISelf checking

Primary REGENERATION Error

CIRCUIT

Watchdog timer
 EDAC example: Hamming code

Parity evaluation of Data Bits Check Bits Total bits

different bit combinations 1 3 4
allows for m bit correct,
n bit detection 2 to 4 4 6 to 8
-Can be used to correctldetect 5 to 11 5 10 to 16
memory output
*Can be used to scrub memories 12 to 26 6 18 to 32
Time between scrubs
determines rnax error 27 to 32 7 34 to 39
latency
Single Bit-Error Correct, Double Bit-Error Detect

47
oclS4 - space Radlann Efl~cf'lpepmlcd by C h s l l a Pavy BDldeavr France November26.2001

Outline
The Space Radiation
Environment
The Effects on Electronics
The Environment in Action
Hardening Approaches to
Commercial CMOS electronics
- CMOS devices vulnerabilities
I Hardening approaches
* €ondwsian

Atomi'c.Interactions
 Conclusion

The radiation environment makes the design of

electronics for space very challenging
High total dose hardness levels can be achieved
with state of the art technologies
A variety of design techniques exist for mitigating
SEE
- Area, power, speed penalties depend on chosen
mitigation approach
New effects occur for each new technology
generation

DCIM - S- Radtdnm Efedo pesmted by Cmsloa m y . Bordeaux. F r a m . N w m b a ZB. 2001 49