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    IRFP260M

    Uploaded by

    Natanael Gonzalez

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    IRFP260M

    Uploaded by

    Natanael Gonzalez
    11 views2 pages

    Copyright

    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views2 pages

    IRFP260M

    Uploaded by

    Natanael Gonzalez

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor IRFP260M，IIRFP260M

    ·FEATURES
    ·Static drain-source on-resistance:
    RDS(on)≤40mΩ
    ·Enhancement mode:
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·DESCRITION
    ·High Speed Power Switching

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 200 V

    VGS Gate-Source Voltage ±20 V

    ID Drain Current-Continuous 50 A

    IDM Drain Current-Single Pulsed 200 A

    PD Total Dissipation @TC=25℃ 300 W

    Tj Max. Operating Junction Temperature 175 ℃

    Tstg Storage Temperature -55~175 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Channel-to-case thermal resistance


    Rth(j-c) 0.5 ℃/W

    Channel-to-ambient thermal resistance


    Rth(j-a) 40 ℃/W

    isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor

    isc N-Channel MOSFET Transistor IRFP260M，IIRFP260M

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

    BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 200 V

    VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 4.0 V

    RDS(on) Drain-Source On-Resistance VGS=10V; ID=28A 40 mΩ

    IGSS Gate-Source Leakage Current VGS= ±20V ±0.1 μA

    IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 25 μA

    VSD Diode forward voltage IS=28A, VGS = 0V 1.3 V

    isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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