E-Band Upconverter 71-86 GHz Guide
E-Band Upconverter 71-86 GHz Guide
71 - 86 GHz
MAMF-011142
Rev. V1
1
Features Functional Schematic
• E-Band Upconverter
• Direct Up-Conversion with I/Q BW up to
VD1_PA
VD3_PA
VD4_PA
VD2_PA
Q*
2.25 GHz
NC
NC
NC
NC
NC
NC
NC
NC
I*
Q
I
• WR12 Interface for the RF Output
• LO×8 with Buffer 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24
VD4_UC 7
Applications 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
• Point to Point
VD2_UC
VG3_PA
VG1_PA
VG2_PA
VD1_UC
VG1_UC
VG2_UC
VG4_PA
VDET
• Infrastructure
VREF
NC
NC
NC
NC
NC
NC
Description
The MAMF-011142 is a surface mount E-band 1. The exposed pad centered on the package bottom must be
transmitter. The module operates from 71 - 86 GHz connected to RF, DC and Thermal GROUND.
and is designed to be used in direct conversion or
heterodyne applications. The RF output is a WR12
interface.
Other features include a local oscillator ×8 multiplier MAMF-011142 Parts shipped in tray
and buffer, and a wide dynamic range power
detector on the output. The module is ideally suited MAMF-011142-TR0200 200 part reel
for low to high capacity, high power E-band point to
point radios. MAMF-011142-TR0500 500 part reel
Electrical Specifications:
VD = 4 V, UC ID1,2,3,4 = 90, 190, 105, 65 mA, PA ID1,2,3,4 = 120, 120, 200, 320 mA,
VG5 = -1.5 V, PLO = -5 dBm, Backside Temperature (TB) = +25°C
Parameters Test Conditions Units Min. Typ. Max.
RF Frequency — GHz 71 — 86
IF Bandwidth — GHz DC — 2.25
LO Frequency — GHz 8.625 — 11
LO Multiplication Factor — ̶ 8
LO Input Power — dBm — -5 —
Conversion Gain IF = 700 MHz dB 24 30 —
Output PSAT IF = 700 MHz dBm 23 25.5 —
PIN = -10 dBm total, IF = 21.4 MHz,
Output IP3 dBm — 31 —
ΔIF = 4.6 MHz
PIN = -10 dBm total, IF = 21.4 MHz,
Total POUT at C/I3 = 25 dBc dBm — 20 —
ΔIF = 4.6 MHz, RF = 86 GHz
PIN = -10 dBm total, IF = 21.4 MHz,
Total POUT at C/I3 = 20 dBc dBm — 22 —
ΔIF = 4.6 MHz, RF = 86 GHz
PIN = -10 dBm total, IF = 21.4 MHz,
Total POUT at C/I2 = 43 dBc dBm — 18 —
ΔIF = 4.6 MHz, RF = 76 GHz
Conversion Gain Variation
IF = 700 MHz dB/GHz — 2 —
Over 2 GHz BW
Gain Adjust Dynamic Range — dB — 40 —
Carrier Leakage Tuning (DC) Range — V — +/-1 —
Tunable Carrier Leakage
— dBc — -30 —
with 1 mV Tuning Step
LO×7 Leakage PIN = -10 dBm, RF = 83.5 GHz dBc — 36 —
LO×9 Leakage PIN = -10 dBm, RF = 73.5 GHz dBc — 37 —
Image Rejection IF = 21.4 MHz dBc — 20 —
Noise Figure IF = 2.25 GHz dB — 16 —
RF 8
Return Loss LO dB — 12 —
IF 10
Power Detector Directivity — dB 18
Output Power Detector — ̶ 10 mV @ -10 dBm
Drain Voltage — V — 4 —
Quiescent Drain Current (DC) — A — 1.21 —
2
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3
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Maximum Drain
Thermal Resistance Current @ +85°C TJ for TB = +85°C
Pin Label Current Rating
(°C/W) (mA) (°C)
(mA)
VD1_UC 116 105 134 140
VD2_UC 66 205 139 240
VD3_UC 75 120 121 135
VD4_UC 116 80 122 140
VD1_PA 75 120 121 200
VD2_PA 79 120 123 200
VD3_PA 59 200 132 275
VD4_PA 35 320 130 460
4
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30 30
20 20
10 10
-40°C
0 -40°C 0 +25°C
+25°C +85°C
+85°C
-10 -10
70 73 76 79 82 85 88 0 50 100 150 200 250 300 350
Frequency (GHz) ID12_UC (mA)
Conversion Gain at Nominal Bias at IF = 700 MHz Gain vs. RF Buffer and PA at IF = 21.4 MHz, RF = 86 GHz
40 40
30 30
Conversion Gain (dB)
Conversion Gain (dB)
20 20
10 10
LSB @ -40°C
LSB @ +25°C
LSB @ +85°C 0
0 USB @ -40°C -40°C
USB @ +25°C +25°C
USB @ +85°C +85°C
-10 -10
70 73 76 79 82 85 88 0 200 400 600 800 1000 1200 1400
Conversion Gain at Nominal Bias at IF = 2.25 GHz Gain vs. LO Bias at IF = 21.4 MHz, RF = 86 GHz
40 40
30 30
Conversion Gain (dB)
Conversion Gain (dB)
20 20
10 10
LSB @ -40°C
LSB @ +25°C
0 LSB @ +85°C 0 -40°C
USB @ -40°C
USB @ +25°C +25°C
USB @ +85°C +85°C
-10 -10
70 73 76 79 82 85 88 40 80 120 160 200 240 280 320
Frequency (GHz) ID34_UC (mA)
5
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35
-20
30
-30
25
-40
20 -50
-3 -2.75 -2.5 -2.25 -2 -1.75 -1.5 -1.25 -1 70 73 76 79 82 85 88
VG5_UC (V) Frequency (GHz)
Gain vs. LO Power at IF = 21.4 MHz, +25°C Image Rejection at IF = 700 MHz
40 0
LSB @ -40°C
LSB @ +25°C
LSB @ +85°C
-10 USB @ -40°C
Image Rejection (dBc)
Conversion Gain (dB)
35 USB @ +25°C
USB @ +85°C
-20
30
-30
PLO = -10 dBm
25 PLO = -5 dBm
PLO = 0 dBm -40
PLO = +5 dBm
PLO = +10 dBm
20 -50
70 73 76 79 82 85 88 70 73 76 79 82 85 88
Frequency (GHz) Frequency (GHz)
USB @ +25°C
USB @ +85°C
-20
-30
-40
-50
70 73 76 79 82 85 88
Frequency (GHz)
6
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25 25
15 15
-40°C
+25°C
+85°C
10 10
70 73 76 79 82 85 88 70 73 76 79 82 85 88
Frequency (GHz) Frequency (GHz)
Saturated Power at Nominal Bias, IF = 700 MHz P1dB at Nominal Bias, IF = 700 MHz
30 30
-40°C
+25°C
+85°C
Saturated Power (dBm)
25 25
Output P1dB (dBm)
20 20
15 15
-40°C
+25°C
+85°C
10 10
70 73 76 79 82 85 88 70 73 76 79 82 85 88
Frequency (GHz) Frequency (GHz)
7
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35
30 15
10
RF = 71 GHz
25 RF = 76 GHz
5 RF = 81 GHz
RF = 86 GHz
20 0
-20 -15 -10 -5 0 5 -20 -15 -10 -5 0 5
Input Power (dBm) Input Power (dBm)
Gain vs. Input Power at +25°C Pout vs. Input Power at +25°C
40 30
RF = 71 GHz
RF = 76 GHz 25
RF = 81 GHz
Conversion Gain (dB)
35
Output Power (dBm)
RF = 86 GHz
20
30 15
10
RF = 71 GHz
25 RF = 76 GHz
5 RF = 81 GHz
RF = 86 GHz
20 0
-20 -15 -10 -5 0 5 -20 -15 -10 -5 0 5
Input Power (dBm) Input Power (dBm)
Gain vs. Input Power at +85°C Pout vs. Input Power at +85°C
40 30
RF = 71 GHz
RF = 76 GHz 25
RF = 81 GHz
Conversion Gain (dB)
35
Output Power (dBm)
RF = 86 GHz
20
30 15
10
RF = 71 GHz
25 RF = 76 GHz
5 RF = 81 GHz
RF = 86 GHz
20 0
-20 -15 -10 -5 0 5 -20 -15 -10 -5 0 5
Input Power (dBm) Input Power (dBm)
8
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25 25
20 20
70 73 76 79 82 85 88 70 73 76 79 82 85 88
Frequency (GHz) Frequency (GHz)
OIP3 at Nominal Bias at IF = 700 and 704.6 MHz
40
LSB @ -40°C
LSB @ +25°C
LSB @ +85°C
USB @ -40°C
35 USB @ +25°C
Output IP3 (dBm)
USB @ +85°C
30
25
20
70 73 76 79 82 85 88
Frequency (GHz)
USB @ +85°C
30
25
20
70 73 76 79 82 85 88
Frequency (GHz)
9
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Typical Performance Curves over Temp. at Total PIN = -10 dBm, IF = 21.4 and 26 MHz
C/I3 vs. RF Buffer bias, RF = 86 GHz C/I3 vs. RF Buffer and PA Bias, RF = 86 GHz
60 60
-40°C
50 +25°C 50
+85°C
40 40
C/I3 (dBc)
C/I3 (dBc)
30 30
20 20
10 10 -40°C
+25°C
+85°C
0 0
0 50 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400
ID12_UC (mA) ID12_UC + ID_PA (mA)
C/I3 vs. Total Output Power , RF = 86 GHz 7 C/I3 vs. Total Output Power8, RF = 86 GHz
60 60
-40°C
50 +25°C 50
+85°C
40 40
C/I3 (dBc)
C/I3 (dBc)
30 30
20 20
10 10 -40°C
+25°C
+85°C
0 0
-10 -5 0 5 10 15 20 25 -10 -5 0 5 10 15 20 25
Total Output Power (dBm) Total Output Power (dBm)
C/I3 vs. Total Output Power6, +25°C C/I3 vs. Total Output Power7, +25°C
60 60
50 50
40 40
C/I3 (dBc)
C/I3 (dBc)
30 30
20 20
71 GHz 71 GHz
76 GHz 76 GHz
10 81 GHz 10 81 GHz
86 GHz 86 GHz
0 0
-10 -5 0 5 10 15 20 25 -10 -5 0 5 10 15 20 25
Total Output Power (dBm) Total Output Power (dBm)
6. Output power controlled by RF buffer current. 7. Output power controlled by RF buffer and PA currents.
10
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Typical Performance Curves over Temp. at Total PIN = -10 dBm, IF = 21.4 and 26 MHz
C/I3 at Nominal Bias C/I3 vs. LO Power, +25°C
60 60
-40°C PLO = -10 dBm
+25°C PLO = -5 dBm
50 +85°C 50 PLO = 0 dBm
PLO = +5 dBm
PLO = +10 dBm
40 40
C/I3 (dBc)
C/I3 (dBc)
30 30
20 20
10 10
0 0
70 73 76 79 82 85 88 70 73 76 79 82 85 88
Frequency (GHz) Frequency (GHz)
40 40
C/I3 (dBc)
C/I3 (dBc)
30 30
20 20
10 -40°C 10
+25°C
+85°C
0 0
80 120 160 200 240 280 320 -3 -2.75 -2.5 -2.25 -2 -1.75 -1.5 -1.25 -1
ID34_UC (mA) VG5_UC (V)
11
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Typical Performance Curves over Temp. at Total PIN = -10 dBm, IF = 21.4 and 26 MHz
C/I2 vs. RF Buffer Bias, RF = 86 GHz C/I2 vs. RF Buffer and PA Bias, RF = 86 GHz
80 80
-40°C
+25°C
+85°C -40°C
70 70 +25°C
+85°C
60 60
C/I2 (dBc)
C/I2 (dBc)
50 50
40 40
30 30
0 50 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400
ID12_UC (mA) ID12_UC + ID_PA (mA)
C/I2 vs. Total Output Power9, RF = 86 GHz C/I2 vs. Total Output Power10, RF = 86 GHz
80 80
-40°C
+25°C
+85°C
70 70
60 60
C/I2 (dBc)
C/I2 (dBc)
50 50
40 40 -40°C
+25°C
+85°C
30 30
-10 -5 0 5 10 15 20 25 -10 -5 0 5 10 15 20 25
Total Output Power (dBm) Total Output Power (dBm)
8
C/I2 vs. Total Output Power , +25°C C/I2 vs. Total Output Power9, +25°C
80 80
70 70
60 60
C/I2 (dBc)
C/I2 (dBc)
50 50
40 71 GHz 40 71 GHz
76 GHz 76 GHz
81 GHz 81 GHz
86 GHz 86 GHz
30 30
-10 -5 0 5 10 15 20 25 -10 -5 0 5 10 15 20 25
Total Output Power (dBm) Total Output Power (dBm)
8. Output power controlled by RF buffer current. 9. Output power controlled by RF buffer and PA currents.
12
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Typical Performance Curves over Temp. at Total PIN = -10 dBm, IF = 21.4 and 26 MHz
C/I2 at Nominal Bias C/I2 vs. LO Power
80 80
PLO = -10 dBm
-40°C PLO = -5 dBm
+25°C PLO = 0 dBm
70 +85°C 70 PLO = +5 dBm
PLO = +10 dBm
60
C/I2 (dBc)
60
C/I2 (dBc)
50 50
40 40
30 30
70 73 76 79 82 85 88 70 73 76 79 82 85 88
Frequency (GHz) Frequency (GHz)
60
C/I2 (dBc)
60
C/I2 (dBc)
50 50
40 -40°C 40
+25°C
+85°C
30 30
40 80 120 160 200 240 280 320 -3 -2.75 -2.5 -2.25 -2 -1.75 -1.5 -1.25 -1
ID34_UC (mA) VG5_UC (V)
13
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Typical Performance Curves over Temperature, PIN = -10 dBm, IF = 21.4 MHz
7×LO Leakage at Nominal Bias 7,8,9×LO Spurs at +25°C
7×LO (GHz) 70
61.25 65.19 69.12 73.06 77
0
60
-40°C
40
7×LO (dBm)
-20
30
-30
20
7xLO
-40 10 8xLO
9xLO
-50 0
8.75 9.31 9.88 10.44 11 70 73 76 79 82 85 88
1×LO (GHz) Frequency (GHz)
8×LO Leakage at Nominal Bias 8×LO Nulling Voltages, I and Q = 0.2 V
8×LO (GHz) 0.6
70 74.5 79 83.5 88 I* @ -40°C
0 I* @ +25°C
I* @ +85°C
0.5 Q* @ -40°C
Q* @ +25°C
-10 Q* @ +85°C
IF Voltage (V)
0.4
8×LO (dBm)
-20
0.3
-30
-40°C
+25°C
0.2
-40
+85°C
-50 0.1
8.75 9.31 9.88 10.44 11 70 73 76 79 82 85 88
1×LO (GHz) Frequency (GHz)
-20
-30
-40
-50
8.75 9.31 9.88 10.44 11
1×LO (GHz)
14
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-10 -10
-15 -15
-20 -20
-30 -30
60 65 70 75 80 85 90 0 1 2 3 4 5 6
Frequency (GHz) Frequency (GHz)
LO Return Loss All IF Return Loss at +25°C
0 0
-5 -5
LO Return Loss (dB)
-10 -10
-15 -15
-20 -20
-40°C I
-25 +25°C -25 I*
+85°C Q
Q*
-30 -30
0 5 10 15 20 25 0 1 2 3 4 5 6
Frequency (GHz) Frequency (GHz)
15
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18 18
Noise Figure (dB)
14 14
-40°C -40°C
+25°C +25°C
12 12
+85°C +85°C
10 10
70 73 76 79 82 85 88 -10 -5 0 5 10
Frequency (GHz) LO Power (dBm)
Power Detector, RF = 71, 76, 81, 86 GHz Detector Directivity at Nominal Bias
10 30
Differential Detector Voltage (V)
1 25
Directivity (dB)
0.1 20
-40°C -40°C
0.01 +25°C 15 +25°C
+85°C
+85°C
0.001 10
-30 -20 -10 0 10 20 30 70 73 76 79 82 85 88
Output Power (dBm) Frequency (GHz)
16
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IF Bias
1 µF
10 nH
IF IN
(from 180º hybrid, 15 pF
baseband or terminated
to 50 Ω) To MAMF-011057
+5 V
100 kΩ 100 kΩ
1% 1%
To VDET To VREF
Read Read
To VDET To VREF
Pin Pin
17
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1 uF 1 uF 1 uF 1 uF
R R R R
10 nF 10 nF 10 nF 10 nF
Bias Sequencing
All gates should be pinched off (VG < -2 V) before
the drain voltage (VD = 4 V) is applied. This
requirement includes VG5 even though there is no
external drain voltage. The gate voltages should
then be adjusted as per bias table on Page 3. The
current will change when LO is applied to stages
three and four.
The currents that are listed are the quiescent
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19
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Pad Diagram
Pin Table
Pin # Pin Name Function Pin # Pin Name Function
1 NC10 Not Connected 22 NC10 Not Connected
2 VG5_UC Mixer Bias 23 NC10 Not Connected
3 LO_IN LO Input 24 NC10 Not Connected
4 VG3_UC LO Multiplier 25 NC10 Not Connected
5 VD3_UC LO Multiplier 26 NC10 Not Connected
6 VG4_UC LO Multiplier Post Amplifier 27 VD4_PA Stage 4 Power Amplifier
7 VD4_UC LO Multiplier Post Amplifier 28 VD3_PA Stage 3 Power Amplifier
8 VG1_UC RF Buffer Stage 1 29 VD2_PA Stage 2 Power Amplifier
9 VD1_UC RF Buffer Stage 1 30 VD1_PA Stage 1 Power Amplifier
10 VG2_UC RF Buffer Stage 2 31 NC10 Future Envelope Detector VSS
11 VD2_UC RF Buffer Stage 2 32 NC10 Future Envelope Detector Output
12 NC10 Not Connected 33 NC10 Future Envelope Detector VDD
13 NC10 Not Connected 34 NC10 Not Connected
14 VG1_PA Stage 1 Power Amplifier 35 I* IF Port
15 VG2_PA Stage 2 Power Amplifier 36 I IF Port
16 VG3_PA Stage 3 Power Amplifier 37 NC10 Not Connected
17 VG4_PA Stage 4 Power Amplifier 38 Q IF Port
18 VREF Reference Detector Diode 39 Q* IF Port
19 VDET Detector Diode 40 RF_OUT RF Output
20 NC10 Not Connected 41 Paddle11 Ground
21 NC10 Not Connected
10.For optimum RF performance, all NCs should be terminated to ground.
11.The exposed paddle centered on the package bottom must be connected to RF, DC and thermal ground.
20
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Layout Dimensions
MF011142
Top View
21
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THESE MATERIALS ARE PROVIDED "AS IS" WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED,
RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULAR
PURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY OR
COMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAY
RESULT FROM USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully
indemnify MACOM for any damages resulting from such improper use or sale.
22
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