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Assignment 02

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10 views3 pages

Assignment 02

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ssn5171
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रा ीय ौ ोिगक सं थान िद ली

National Institute of Technology Delhi


Assignment - 02
Department: Electronics and Communication Engineering
Programme: B. Tech Course Code: ECL 365
Semester: Sixth Course Title: Introduction to MEMS

Question
Question Description Marks
Number
i. Explain the operational principle and working of an
electrostatic motor.
1 ii. What is SOI Wafer? Mention some bene its of the same. 3+2+2
iii. What are the mitigation techniques deployed to
address the stiction issue?
Consider an air-gap capacitor made with two ixed parallel
planar plates. At zero bias, the distance between two parallel
plates is 𝑥 = 100 𝜇𝑚 and the area of plates are 𝐴 =
400 × 400 𝜇𝑚 . The media between the two plates is air. The
biasing voltage between these two plates is V = 5 volts.
2 2+2
i. Calculate the numerical value of the capacitance and
the magnitude of the attractive force.
ii. What is the capacitance value if half of the area is illed
with a luid with a relative dielectric constant of 85.3 as
the inter plate media?
A parallel-plate capacitor is suspended by two ixed-guided
cantilever beams, each with length, width and thickness
denoted by l, w, and t, respectively. The material is polysilicon,
with a Young’s modulus of 120 GPa.
i. For l = 400 μm, w = 10µm and t = 1 µm, calculate the
3 3+3
amount of vertical displacement when a voltage of 0.4
volts is applied. Consider the distance between the
plates to be 2 µm and their area to be 𝐴 = 400 ×
400 𝜇𝑚 .
ii. Calculate the same for an applied voltage of 0.2 volts.
Write a short note on the following:
i. Inertia Sensor
4 ii. Pressure Sensor 2*4
iii. Flow Sensor
iv. Tactile Sensor
A resistive ohmic heater is located in the middle of a
suspended ixed- ixed cantilever. The beam is made of silicon
nitride and the metal leads are made of aluminium. Assume
5 2+1
that the width of the beam is 10 µm, L = 100 µm and the
thickness of both aluminium and silicon nitride is 0.2 µm.
i. Find the numerical value of the thermal resistance
experienced by the heater.
ii. If the input power to the heater is 0.1 mW, what is the
steady temperature assuming that silicon bulk stays at
300K?

Consider the thermal conductivity of aluminium and silicon


nitride to be 240 W/mK and 5 W/mK respectively.
Consider a composite bimetallic beam made of two materials
having the same length and coef icients of thermal expansions
to be 𝛼 𝑎𝑛𝑑 𝛼 with 𝛼 > 𝛼 . The beam is subjected to a
6 uniform temperature change of ∆𝑇. 2

Calculate the vertical displacement of the bimetallic beam


given the circumstances.
i. A thermal resistor is made of doped n-type single
crystal silicon, with the nominal resistance of 2kΩ.
Assume the TCR of the material is 100 ppm/°C.
Calculate the resistance of the device at a temperature
75°C above the ambient.
7 1+1
ii. Calculate the force acting on a 100 µm long metal wire
carrying a current of 10 mA, when it is placed inside a
uniform magnetic ield of 1 T with the ield lines
transverse to the direction of the conducting wire.
A longitudinal piezo-resistor is embedded on the top surface
of a silicon cantilever near the anchored base. The cantilever
points in the <110> direction. The piezo-resistor is p-type
8 doped with resistivity of 7.8 Ωcm. Consider the Young’s 2
modulus to be 168 GPa.

Calculate the longitudinal gauge factor of the piezo-resistor.


A ixed-free cantilever is made of single crystal silicon. The
longitudinal axis of the cantilever points in the [100] crystal
orientation. The resistor is made by diffusion doping with a
longitudinal gauge factor of 50. The length, width and
thickness of the cantilever are 200 µm, 20 µm and 5 µm
9 respectively. Consider the Young’s modulus of silicon to be 130 2
GPa.

If a force of F = 100 µN is applied at the end of the cantilever


in the longitudinal direction, what would be the percentage
change in resistance?
i. Draw representative hysteresis curves for hard and
soft magnets.
ii. What is remnant magnetization?
10 1*5
iii. What does the area enclosed by the hysteresis curve
indicate for a magnetic material?
iv. What does coercivity of a material measure?
v. What are diamagnetic and paramagnetic materials?
Consider four cantilevers with doped piezo-resistors at the
base. The dimension of the cantilevers, the doping
concentration and pro ile, and the force are the same across
these four cases. The resistors have different thickness. The
thicknesses are , , 𝑎𝑛𝑑 respectively.
Discuss the pros and cons of their designs.

11 2

i. Find the internal magnetisation of a ferromagnetic


material at two induction ield strengths – (a) 3000
A/m ( irst time magnetization) and (b) 10,000 A/m
after several full magnetization cycles.

12 2+2

ii. Calculate the induction ield created by its magnet


measured at its surface.
What are the advantages and disadvantages of the following
sensing methods:
i. Electrostatic Sensing
13 2*4
ii. Thermal Sensing
iii. Piezo-Resistive Sensing
iv. Piezo-Electric Sensing
Explain the difference in properties of elastomers, plastics and
14 3
ibres.
Write the full form of the following: LCP, PDMS, PMMA and
15 2
PVC.

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