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MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2209
Preferred Device

Silicon Tuning Diodes

These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general http://onsemi.com
frequency control and tuning applications. They provide solid−state
reliability in replacement of mechanical tuning methods. Also 6.8−100 pF, 30 VOLTS
available in a Surface Mount Package up to 33 pF.
VOLTAGE VARIABLE
Features CAPACITANCE DIODES
• High Q
• Controlled and Uniform Tuning Ratio 3 1
• Standard Capacitance Tolerance − 10% Cathode
SOT−23
Anode

• Complete Typical Design Curves

• Pb−Free Packages are Available 2 1
Cathode Anode
TO−92
MAXIMUM RATINGS
Rating Symbol Value Unit MARKING
Reverse Voltage VR 30 Vdc 3 DIAGRAMS
Forward Current IF 200 mAdc
1
Forward Power Dissipation PD 2 xxx M G
@ TA = 25°C MMBV21xx 225 mW SOT−23 (TO−236)
Derate above 25°C 1.8 mW/°C G
CASE 318−08
STYLE 8 1
@ TA = 25°C MV21xx 280 mW
Derate above 25°C LV2209 2.8 mW/°C
xxx = Specific Device Code
Junction Temperature TJ +150 °C M = Date Code*
G = Pb−Free Package
Storage Temperature Range Tstg −55 to +150 °C (Note: Microdot may be in either location)
Maximum ratings are those values beyond which device damage can occur. *Date Code orientation and/or overbar may
Maximum ratings applied to the device are individual stress limit values (not vary depending upon manufacturing location.
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
yy
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) yyyy
AYWW G
Characteristic Symbol Min Typ Max Unit TO−92 (TO−226AC) G
Reverse Breakdown Voltage V(BR)R Vdc 1 CASE 182
(IR = 10 mAdc) 2 STYLE 1
MMBV21xx, MV21xx 30 − −
LV2209 25 − − yyyyyy = Specific Device Code
A = Assembly Location
Reverse Voltage Leakage Current IR − − 0.1 mAdc
(VR = 25 Vdc, TA = 25°C) Y = Year
WW = Work Week
Diode Capacitance Temperature Co- TCC − 280 − ppm/°C G = Pb−Free Package
efficient (VR = 4.0 Vdc, f = 1.0 MHz) (Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

January, 2006 − Rev. 4 MMBV2101LT1/D
 MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

CT, Diode Capacitance Q, Figure of Merit TR, Tuning Ratio

VR = 4.0 Vdc, f = 1.0 MHz VR = 4.0 Vdc, C2/C30
pF f = 50 MHz f = 1.0 MHz
Device Marking Package Shipping † Min Nom Max Typ Min Typ Max
MMBV2101LT1 M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2
MMBV2101LT1G M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2
(Pb−Free)
MMBV2101L M4G SOT−23 Bulk (Note 1) 6.1 6.8 7.5 450 2.5 2.7 3.2
MV2101 MV2101 TO−92 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2
MV2101G MV2101 TO−92 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2
(Pb−Free)
MMBV2103LT1 4H SOT−23 3,000 / Tape & Reel 9.0 10 11 400 2.5 2.9 3.2
MMBV2105LT1 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2105LT1G 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2
(Pb−Free)
MMBV2105L 4U SOT−23 Bulk (Note 1) 13.5 15 16.5 400 2.5 2.9 3.2
MV2105 MV2105 TO−92 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2
MV2105G MV2105 TO−92 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2
(Pb−Free)
MMBV2107LT1 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2107LT1G 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2
(Pb−Free)
MMBV2107L 4W SOT−23 Bulk (Note 1) 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2108LT1 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2
MMBV2108LT1G 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2
(Pb−Free)
LV2209 LV2209 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109LT1 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2
MMBV2109LT1G 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2
(Pb−Free)
MMBV2109L 4J SOT−23 Bulk (Note 1) 29.7 33 36.3 200 2.5 3.0 3.2
MV2109 MV2109 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
MV2109G MV2109 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.

PARAMETER TEST METHODS

1. CT, DIODE CAPACITANCE (Boonton Electronics Model 33AS8 or equivalent). Use Lead
(CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance Length [ 1/16″.
bridge (Boonton Electronics Model 75A or equivalent). 4. TCC, DIODE CAPACITANCE TEMPERATURE
2. TR, TUNING RATIO COEFFICIENT
TR is the ratio of CT measured at 2.0 Vdc divided by CT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0
measured at 30 Vdc. MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA
= +85°C in the following equation, which defines TCC:
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an admittance TCC + ŤCT() 85°C) – CT(–65°C)
85 ) 65
Ť · 106
C (25°C)
bridge at the specified frequency and substituting in the T
following equations:
Accuracy limited by measurement of CT to ±0.1 pF.
Q + 2pfC
G

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 MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

TYPICAL DEVICE CHARACTERISTICS

1000
TA = 25°C
500
f = 1.0 MHz
C T , DIODE CAPACITANCE (pF)

200
100 MMBV2109LT1/MV2109
50 MMBV2105LT1/MV2105
20 MMBV2101LT1/MV2101
10
5.0

2.0
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30
VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Diode Capacitance versus Reverse Voltage

1.040 100
VR = 2.0 Vdc 50 TA = 125°C
NORMALIZED DIODE CAPACITANCE

1.030

I R , REVERSE CURRENT (nA)

20
1.020 10
VR = 4.0 Vdc 5.0
1.010
2.0 TA = 75°C
1.000 VR = 30 Vdc 1.0
0.50
0.990
0.20 TA = 25°C
0.980 NORMALIZED TO CT 0.10
at TA = 25°C
0.05
0.970 VR = (CURVE)
0.02
0.960 0.01
−75 −50 −25 0 +25 +50 +75 +100 +125 0 5.0 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C) VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance versus Figure 3. Reverse Current versus Reverse Bias
Junction Temperature Voltage

5000 5000
3000 MMBV2101LT1/MV2101 3000
2000 2000
MMBV2109LT1
1000 1000 MMBV2101LT1/MV2101
Q, FIGURE OF MERIT

Q, FIGURE OF MERIT

500
500
300 300
200 200
100 100

50 50
30 TA = 25°C 30 TA = 25°C MMBV2109LT1/MV2109
20 f = 50 MHz 20 VR = 4.0 Vdc
10 10
1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 250
VR, REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz)

Figure 4. Figure of Merit versus Reverse Voltage Figure 5. Figure of Merit versus Frequency

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 MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AN

NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI
SEE VIEW C Y14.5M, 1982.
3 2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
E HE BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
c
1 2 MILLIMETERS INCHES
b DIM MIN NOM MAX MIN NOM MAX
e 0.25 A 0.89 1.00 1.11 0.035 0.040 0.044
A1 0.01 0.06 0.10 0.001 0.002 0.004
q b 0.37 0.44 0.50 0.015 0.018 0.020
c 0.09 0.13 0.18 0.003 0.005 0.007
D 2.80 2.90 3.04 0.110 0.114 0.120
A E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.081
L L 0.10 0.20 0.30 0.004 0.008 0.012
A1 L1 0.35 0.54 0.69 0.014 0.021 0.029
L1 HE 2.10 2.40 2.64 0.083 0.094 0.104
VIEW C STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE

SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035
SCALE 10:1 ǒinches
mm Ǔ

0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

PACKAGE DIMENSIONS

TO−92 (TO−226AC)
CASE 182−06
ISSUE L

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
B Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
SEATING
R 4. LEAD DIMENSION IS UNCONTROLLED IN P AND
PLANE BEYOND DIMENSION K MINIMUM.

ÉÉ
D
INCHES MILLIMETERS
P L
DIM MIN MAX MIN MAX

ÉÉ
J A 0.175 0.205 4.45 5.21
K B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.050 BSC 1.27 BSC
SECTION X−X H 0.100 BSC 2.54 BSC
X X J 0.014 0.016 0.36 0.41
D K 0.500 −−− 12.70 −−−
G L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.03 2.66
H P −−− 0.050 −−− 1.27
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
V
C STYLE 1:
PIN 1. ANODE
2. CATHODE
1 2 N

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